• 제목/요약/키워드: solar concentration

검색결과 546건 처리시간 0.044초

유해성분이 없는 고품질 소금의 새로운 제조공정에 관한 연구 (A study on the new manufacturing processes of high quality salt without hazardous ingredients)

  • 김경근;문수범;소예덕
    • Journal of Advanced Marine Engineering and Technology
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    • 제40권6호
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    • pp.458-467
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    • 2016
  • 소금은 인간의 생리활동에서 매우 중요한 물질로서 섭취한 영양소를 혈액 안으로 수송하는 역할을 한다. 따라서 소금에는 카드늄, 수은, 납, 비소와 같은 유해성분이 전혀 포함되지 않는 것이 가장 이상적이다. 그러나 소금은 모든 물질이 용존 되어 있는 해수로부터 얻어지기 때문에 기술적 한계로 불가불 미량의 유해성분이 포함되는 것을 법적으로 용인하고 있다. 본 논문은 해수의 농도증가에 따른 순차석출 현상을 응용하여 '$15^{\circ}C$ 저온진공건조기술'로 유해성분이 전혀 포함되지 않는 식탁염의 새로운 제조방법에 대한 실험결과를 보고하였다. 본 연구결과를 전통적인 천일염의 제조공정에 확장 적용하면 세계적 명품 소금의 제조도 가능하다.

Cu 도핑과 열처리가 ZnTe 박막의 물성에 미치는 영향 (Influence of Cu Doping and Heat Treatments on the Physical Properties of ZnTe Films)

  • 최동일;윤세왕;김동환
    • 한국재료학회지
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    • 제9권2호
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    • pp.173-180
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    • 1999
  • Thermally evaporated ZnTe films were investigated as a back contact material for CdS/CdTe solar cells. Two deposition methods, coevaporation and double-layer methods, were used for Cu doping in ZnTe films. ZnTe layers (0.2$\mu\textrm{m}$ thick) were deposited either on glass or on CdS/CdTe substrates without intentional heating of the substrates. Post-deposition annealing was performed at 200,300 and $400^{\circ}C$ for 3,6 and 9 minutes, respectively. Band gap of 2.2eV was measured for both undoped and doped films and a slight change in the shape of absorption spectra was observed in Cu-doped samples after annealing at $400^{\circ}C$. The resistivity of as-deposited ZnTe decreased from 10\ulcorner~10\ulcornerΩcm down to 10\ulcornerΩcm as Cu concentration increased from 0 to 14 at.%. There was not a noticeable change in less of annealing temperature up to $300^{\circ}C$ whereas films annealed at $400^{\circ}C$ revealed hexagonal (101) orientations as well. Some of Cu-doped ZnTe revealed x-ray diffraction (XRD) peaks related with Cu\ulcornerTe(x=1.75~2). Grain growth was observed from about 20nm in as-deposited films to 50nm after annealing at $400^{\circ}C$ by scanning electron microscopy (SEM). Cu distribution in ZnTe films was not uniform according to Auger electron spectroscopy (AES) measurements.

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발열 위치에 따른 잉곳의 방향성 응고 평가 (Estimation of Directional Solidification Ingot with Heating Position)

  • 전호익;조현섭
    • 한국산학기술학회논문지
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    • 제14권4호
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    • pp.1915-1920
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    • 2013
  • 본 논문은 열 해석 시뮬레이션과 주조로의 구조 변경을 통한 실리콘 잉곳의 방향성 응고에 대한 연구이다. 열 해석 시뮬레이션에 의한 결과, 용융은 유지 시간이 80분일 때 실리콘이 전체적으로 고르게 용융 온도에 도달하였고 냉각은 상부 냉각 온도가 $1,400^{\circ}C$와 60분 냉각 시 가장 좋은 결과 값을 나타내었다. 제작된 웨이퍼가 기존의 상용 웨이퍼보다 결정립계에서의 에칭이 훨씬 적게 이루어졌다. FTIR 측정결과 산소와 탄소 모두 모두 임계값 이하의 불순물로 존재함을 확인하였다. NAA 분석 결과 총 18가지 금속 불순물이 검출 되었지만, 농도 분포는 같은 위치에서 위와 아래의 차이는 크게 나지 않고, 어떤 특정한 위치에서 한쪽으로 집중되거나 어떤 경향성 없이 전체의 샘플의 모든 부분에서 농도가 거의 일정하게 분포를 나타냈다.

Low-temperature Epitaxial Growth of a Uniform Polycrystalline Si Film with Large Grains on SiO2 Substrate by Al-assisted Crystal Growth

  • Ahn, Kyung Min;Kang, Seung Mo;Moon, Seon Hong;Kwon, HyukSang;Ahn, Byung Tae
    • Current Photovoltaic Research
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    • 제1권2호
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    • pp.103-108
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    • 2013
  • Epitaxial growth of a high-quality thin Si film is essential for the application to low-cost thin-film Si solar cells. A polycrystalline Si film was grown on a $SiO_2$ substrate at $450^{\circ}C$ by a Al-assisted crystal growth process. For the purpose, a thin Al layer was deposited on the $SiO_2$ substrate for Al-assisted crystal growth. However, the epitaxial growth of Si film resulted in a rough surface with humps. Then, we introduced a thin amorphous Si seed layer on the Al film to minimize the initial roughness of Si film. With the help of the Si seed layer, the surface of the epitaxial Si film was smooth and the crystallinity of the Si film was much improved. The grain size of the $1.5-{\mu}m$-thick Si film was as large as 1 mm. The Al content in the Si film was 3.7% and the hole concentration was estimated to be $3{\times}10^{17}/cm^3$, which was one order of magnitude higher than desirable value for Si base layer. The results suggest that Al-doped Si layer could be use as a seed layer for additional epitaxial growth of intrinsic or boron-doped Si layer because the Al-doped Si layer has large grains.

Invention of Ultralow - n SiO2 Thin Films

  • Dung, Mai Xuan;Lee, June-Key;Soun, Woo-Sik;Jeong, Hyun-Dam
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2010년도 제39회 하계학술대회 초록집
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    • pp.281-281
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    • 2010
  • Very low refractive index (<1.4) materials have been proved to be the key factor improving the performance of various optical components, such as reflectors, filters, photonic crystals, LEDs, and solar cell. Highly porous SiO2 are logically designed for ultralow refractive index materials because of the direct relation between porosity and index of refraction. Among them, ordered macroporous SiO2 is of potential material since their theoretically low refractive index ~1.10. However, in the conventional synthesis of ordered macroporous SiO2, the time required for the crystallization of organic nanoparticles, such as polystyrene (PS), from colloidal solution into well ordered template is typical long (several days for 1 cm substrate) due to the low interaction between particles and particle - substrate. In this study, polystyrene - polyacrylic acid (PS-AA) nanoparticles synthesized by miniemulsion polymerization method have hydrophilic polyacrylic acid tails on the surface of particles which increase the interaction between particle and with substrate giving rise to the formation of PS-AA film by simply spin - coating method. Less ordered with controlled thickness films of PS-AA on silicon wafer were successfully fabricated by changing the spinning speed or concentration of colloidal solution, as confirmed by FE-SEM. Based on these template films, a series of macroporous SiO2 films whose thicknesses varied from 300nm to ~1000nm were fabricated either by conventional sol - gel infiltration or gas phase deposition followed by thermal removal of organic template. Formations of SiO2 films consist of interconnected air balls with size ~100 nm were confirmed by FE-SEM and TEM. These highly porous SiO2 show very low refractive indices (<1.18) over a wide range of wavelength (from 200 to 1000nm) as shown by SE measurement. Refraction indices of SiO2 films at 633nm reported here are of ~1.10 which, to our best knowledge, are among the lowest values having been announced.

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Simulated Radiances of the OSMI over the Oceans

  • Lim, Hyo-Suk;Kim, Yong-Seung;Lee, Dong-Han
    • 대한원격탐사학회:학술대회논문집
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    • 대한원격탐사학회 1998년도 Proceedings of International Symposium on Remote Sensing
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    • pp.43-48
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    • 1998
  • Prior to launch, simulated radiances of the Ocean Scanning Multispectral Imager (OSMI) will be very useful to guess the real imagery of OSMI and to check the data processing system for OSMI. The data processing system for OSMI which is one sensor of Korea Mult i - Purpose Satellite (KOMPSAT) scheduled for launch in 1999 is being developed based on the SeaWiFS Data Analysis System (SeaDAS). Such a simulation should include the spectral bands, orbital and scanning characteristics of the OSMI and KOMPSAT spacecraft. The simulation is also very helpful for finding and preparing for problem areas before launch. This paper describes a method to create simulated radiances of the OSMI over the oceans. Our method for constructing a simulated OSMI imagery is to propagate a KOMPSAT orbit over a field of Coastal Zone Color Scanner (CZCS) pigment values and to use the values and atmospheric components to calculate total radiances. A modified Brouwer - Lyddane model with drag was used for the realistic orbit prediction, the CZCS pigment data were used to compute water - leaving radiances, and a variety of radiative transfer models were used to calculate atmospheric contributions to total radiances detected by OSMI. Imagery of the simulated OSMI total radiances for 6 nominal bands was obtained. As expected, water - leaving radiances were only a small fraction of total radiances and sun glint contaminations were observed near the solar declination. Therefore, atmospheric correction is very important in the calculation of pigment concentration from total radiances. Because the imagery near the sun's glitter pattern is virtually useless and must be discarded, more advanced mission planning will be required.

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The Effects of Doping Hafnium on Device Characteristics of $SnO_2$ Thin-film Transistors

  • 신새영;문연건;김웅선;박종완
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2011년도 제40회 동계학술대회 초록집
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    • pp.199-199
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    • 2011
  • Recently, Thin film transistors (TFTs) with amorphous oxide semiconductors (AOSs) can offer an important aspect for next generation displays with high mobility. Several oxide semiconductor such as ZnO, $SnO_2$ and InGaZnO have been extensively researched. Especially, as a well-known binary metal oxide, tin oxide ($SnO_2$), usually acts as n-type semiconductor with a wide band gap of 3.6eV. Over the past several decades intensive research activities have been conducted on $SnO_2$ in the bulk, thin film and nanostructure forms due to its interesting electrical properties making it a promising material for applications in solar cells, flat panel displays, and light emitting devices. But, its application to the active channel of TFTs have been limited due to the difficulties in controlling the electron density and n-type of operation with depletion mode. In this study, we fabricated staggered bottom-gate structure $SnO_2$-TFTs and patterned channel layer used a shadow mask. Then we compare to the performance intrinsic $SnO_2$-TFTs and doping hafnium $SnO_2$-TFTs. As a result, we suggest that can be control the defect formation of $SnO_2$-TFTs by doping hafnium. The hafnium element into the $SnO_2$ thin-films maybe acts to control the carrier concentration by suppressing carrier generation via oxygen vacancy formation. Furthermore, it can be also control the mobility. And bias stability of $SnO_2$-TFTs is improvement using doping hafnium. Enhancement of device stability was attributed to the reduced defect in channel layer or interface. In order to verify this effect, we employed to measure activation energy that can be explained by the thermal activation process of the subthreshold drain current.

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네트워크를 이용한 온실 감시 시스템의 개발 (Development of a Greenhouse Monitoring System Using Network)

  • 임정호;류관희;진제용
    • Journal of Biosystems Engineering
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    • 제28권1호
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    • pp.53-58
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    • 2003
  • This study was carried out to design, construct, and test a greenhouse monitoring system fur the environment and status of control devices in a greenhouse from a remote site using internet. The measuring items selected out of many environmental factors were temperature, humidity, solar radiation, CO$_2$, SOx, NOx concentration, EC, pH of nutrient solution, the state of control devices, and the image of greenhouse. The developed greenhouse monitoring system was composed of the network system and the measuring module. The network system consists of the three kinds of monitors named the Croup Monitor. the Client Monitor and the Server Monitor. The results of the study are summarized as follows. 1. The measuring module named the House Monitor. which is used to watch the state of the control device and the environment of the greenhouse, was developed to a embedded monitoring module using one chip microprocessor 2. For all measuring items. the House Monitor showed a satisfactory accuracy within the range of ${\pm}$0.3%FS. The House Monitors were connected to the Croup Monitor by communication method of RS-485 type and could operate under power and communication fault condition within 10 hours. The Croup Monitor was developed to receive and display measurement data received from the House Monitors and to control the greenhouse environmental devices. 3. The images of the plants inside greenhouse were captured by PC camera and sent to the Group Monitor. The greenhouse manager was able to monitor the growth state of plants inside greenhouse without visiting individual greenhouses. 4. Remote monitoring the greenhouse environment and status of control devices was implemented in a client/server environment. The client monitor of the greenhouse manager at a remote site or other greenhouse manager was able to monitor the greenhouse environment and the state of control devices from the Server Monitor using internet.

The photochemical reactions of iron species in rain and snow in Higashi-Hiroshima, Japan

  • Kim, Do Hoon;Takeda, Kazuhiko;Sakugawa, Hiroshi;Lee, Jin Sik
    • 분석과학
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    • 제16권6호
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    • pp.466-474
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    • 2003
  • This paper describes the concentrations of total dissolved iron (tFe) and $Fe^{2+}$ in rainwater and snow, the relationship of Fe species with other metals and ions in bulk rainwater, and the $Fe^{2+}$ generation mechanism in aqueous samples in rainwater of time series collection. Volume weight mean concentrations of tFe and $Fe^{2+}$ were 3.22 and $1.25{\mu}gL^{-1}$ in bulk rainwater, and 50.1 and $43.5{\mu}gL^{-1}$ in snow, respectively. $Fe^{2+}$ was significant fraction to the tFe, accounted for 3.25-93.4% of the tFe in rainwater and 87% in snow. We also investigated temporal variations of tFe, $Fe^{2+}$, other metals and ions in rainwater of time series collection during rain event. Although the concentration range of tFe was different from those of other species, a decreasing trend of tFe from the beginning of the rain event was similar with other species. However, though $Fe^{2+}$ did not show such a decreasing trend, $Fe^{2+}$/tFe was in good correlation with solar radiation. From the results of multiple linear regression analysis and thermodynamic calculations (Mineql+), $Fe^{2+}$ in our samples may be generated from photochemical reduction of $Fe^{3+}$ species (such as $Fe(OH)^{2+}$,$Fe(OH)^{2+}$ and Fe-oxalate) at daytime.

Effects of Chronic Chitosan Salt Supplementation on Blood Pressure, Plasma Component, and Lipid Profile in Healthy Male and Female Adults

  • Kim, Hag-Lyeol;Son, Yeon-Hee;Kim, Seon-Jae;Kim, Du-Woon;Ma, Seung-Jin;Cho, Geon-Sik;Kim, In-Cheol;Ham, Kyung-Sik
    • Food Science and Biotechnology
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    • 제16권2호
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    • pp.249-254
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    • 2007
  • The effects of chronic chitosan salt supplementation on the systolic (SBP) and diastolic blood pressure (DBP), and physiological parameters were investigated in healthy male and female adult. Chitosan salt was conducted by measuring various health-related factors such as body composition, plasma $Na^+$, $Cl^-$, lipid, and lipoproteins profiles, glutamic oxaloacetic transaminase (GOT), and glutamic pyruvic transaminase (GPT) activity. Chitosan salt supplementation no significant differences before and after supplement in body composition variables and in SBP and DBP in either male or female. Plasma sodium and chlorine concentration no significant changes during chitosan salt supplementation, and no significant difference between two genders. Plasma GOT and GPT activity no different before and after supplement in either male or female. GOT activity significantly higher for male before supplement (p<0.05), and 2 weeks after supplement (p<0.01). The lipid and lipoproteins profiles of plasma no significant changes during chitosan salt supplementation in either male or female subjects. In summary, the chronic intake of chitosan salt did not affect the SBP or DBP, and posed no health risks.