• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
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• pp.533-534
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• 2012

Colloidal III-V semiconductor nanocrystal quantum dots (NQDs) have attracted attention as they can be applied in various areas such as LED, solar cell, biological imaging, and so on because they have decreased ionic lattices, lager exciton diameter, and reduced toxicity compared with II-VI compounds. However, the study and application of III-V semiconductor nanocrystals is limited by difficulties in control nucleation because the molecular bonds in III-V semiconductors are highly covalent compared to II-VI compounds. There is a need for a method that provides rapid and scalable production of highly quality nanoparticles. We present a new synthetic scheme for the preparation of InP nanocrystal quantum dots using new phosphorus precursor, P(SiMe2tbu)3. InP nanocrystals from 530nm to 600nm have been synthesized via the reaction of In(Ac)3 and new phosphorus precursor in noncoordinating solvent, ODE. This opens the way for the large-scale production of high quality Cd-free nanocrystal quantum dots.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2011년도 제40회 동계학술대회 초록집
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• pp.65-65
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• 2011

We report the application of conducting metal oxide electrodes for semiconducting metal oxide gas sensors. Pt interdigitated electrodes have been commonly used for metal oxide gas sensor because of the low resistivity, excellent thermal and chemical stability of Pt. However, the high cost of Pt is an obstacle for the wide use of metal oxide gas sensors compared with its counterpart electrochemical gas sensors. Meanwhile, relatively low-cost conducting metal oxides are widely being used for light-emitting diodes, flat panel displays, solar cell and etc. In this work, we have fabricated $WO_3$ and $SnO_2$ thin film gas sensors using interdigitated electrodes of conducting metal oxides. Thin film gas sensors based on conducting metal oxides exhibited superior gas sensing properties than those using Pt interdigitated electrodes. The result was attributed to the low contact resistance between the conducting metal oxide and the sensing material. Consequently, we demonstrated the feasibility of conducting metal oxide interdigitated electrodes for novel gas sensors.

• 열처리공학회지
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• 제24권1호
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• pp.10-15
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• 2011

Recently, renewable energy sources such as wind turbine, solar cell are interested in preventing global warming which is caused by the consumption of fossil fuel. SCM440(H) and SNCM439 have been used in the major components of the wind turbine gear because of excellent mechanical properties. In the present study, the heat treated mechanical properties of SCM440(H) and SNCM439 with 150 mm diameter were compared with those with 25 mm diameter which is generally accepted material for structural application. Heat treated SCM440(H) showed better mechanical properties such as tensile strength, hardness and impact absorbed energy compared with those in SNCM439. Hardenss value between as-quenched and as-quenched followed by tempering showed big difference in SNCM439, however the difference in SCM440(H) was relatively small. Heat treated mechanical properties of the alloys with 25 mm diameter were more uniform value than those with 150 mm diameter.

• 한국수소및신에너지학회논문집
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• 제18권1호
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• pp.40-45
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• 2007

Methylene blue(MB) was photocatalytically degraded with one-body photoanode and solar simulator to investigate the possible application to both environmental purification and photoelectrochemical cell for hydrogen production. Photoactive titanium dioxide was formed on both sides of Ti plate following steps such as rinsing-annealing-calcination or anodizing(20 V, 30 V)-annealing($350^{\circ}C$, $450^{\circ}C)$ after etching. The prepared titania plate($2cm{\times}2\;cm$, ca 1.6 mg $TiO_2$ on the basis of $1\;{\mu}m$ thickness) was used to degrade MB(10 ppm in 200 mL solution). The reaction tended to follow the Langmuir-Hinshelwood kinetics with zero order. Comparative experiments with Degussa P25 showed the same zero order kinetics when 2 mg of P25 had been used, while the first order kinetics when 200 mg used. This concludes the feasibility of the prepared titania plate as a material for the purification of low-level harmful organics and an electrode or a membrane for photoelectrochemical system for hydrogen production.

• 한국조명전기설비학회:학술대회논문집
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• 한국조명전기설비학회 2008년도 추계학술대회 논문집
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• pp.205-210
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• 2008

Titanium-doped indium oxide (ITiO) films were prepared on soda-lime glass substrate using a magnetic null discharge (MND) sputter source. The ITiO thin films containing 10wt.% Ti showed the minimum resistivity of $\rho=5.5{\times}10^{-3}{\Omega}-cm$. The optical transmittance increases from 70% at 450 nm to 80% at 700 nm in visible spectrum. Photoelectron peaks for In 3d, Ti 2p, O 1s and C1s were detected for the ITiO film in the binding energy range of 0 to 1100 eV. The surface roughness of the sample showed a change from 10 nm to 50 nm. The ITiO film used for TCO layer of DSCs exhibited an energy conversion efficiency of about 3.8% at light intensity of 100 mW/$cm^2$.

• E2M - 전기 전자와 첨단 소재
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• 제8권6호
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• pp.699-707
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• 1995

The material that is both conductive in electricity and transparent to the visible ray is called transparent conducting thin film. It has many fields of application such as Solar Cell, Liquid Crystal display, Vidicon on T.V, transparent electrical heater, selective optical filter, and a optical electric device , etc. In the recent papers on several TCO( transparent conducting oxide ) material, the study is mainly focusing on ITO(indium tin oxide) because ITO shows good results on both optical and electrical properties. Nowaday, in the development of LCD(Liquid Crystal display), the low temperature process to reduce the production cost and to deposit ITO on polymer substrate (or low melting substrate) has been demanded. In this study, we prepared indium tin oxide(ITO) by a cylindrical DC magnetron sputtering with Indium-tin (9:1) alloy target instead of indium-tin oxide target. The resistivity of the film deposited in oxygen partial pressure of 5% and substrate temperature of 140.deg. C. is 1.6*10$\^$-4/.ohm..cm with 85% optical transmission in viaible ray.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2003년도 하계학술대회 논문집 C
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• pp.1592-1594
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• 2003

This paper presents the deposition and characterization of microcrystalline silicon(${\mu}c$-Si:H) films by HWCVD(Hot-wire Chemical Vapor Deposition) method at low substrate($300^{\circ}C$). The filament temperature, pressure and $SiH_4$ concentration were determined to be a critical parameter for the deposition of poly-Si films. Series A was deposited under the conditions of $1380^{\circ}C$(Tf), 100 mTorr and $2{\sim}10%\{SC:SiH_4/(SiH_4+H_2)\}$ for 60 min. Series B was deposited under the conditions of $1400{\sim}1450^{\circ}(T_f)$, 30 mTorr and $2{\sim}12%$(SC) for 60 min. The physical characteristics were measured by Raman and FTIR spectroscopy, dark and photoconductivity measurements under AM1.5 illumination.

• 한국결정성장학회지
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• 제4권3호
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• pp.238-244
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• 1994

보로실리케이트 유리기판과 석영기판을 사용하여 $800^{\circ}C~520^{\circ}C$의 온도 범위에서 용액 성장법에 의한 다결정 실리콘 박막의 성장에 관해 조사 하였다. 기판상에는 용애과의 젖음성을 좋게 해주기 위해 박막의 알루미늄츠오가 실리콘층이 증착되었으며, 용매로는 알루미늄과 실리콘옥사이드와의 반응에 의해서 일어난다. 결정립 크기가 수백 마이크론까지 이르는 실리콘을 얻을 수 있었으며, 석영기 판의 경우에는 보르실리 케이트 유리기판보다 강한 (111) 우선 성장 방향을 보여주고 있다.

• 대한화장품학회지
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• 제35권4호
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• pp.317-323
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• 2009

지속적인 자외선 노출은 사람의 피부에 주름 형성을 유발한다. 본 연구에서 생강나무 추출물이 광노화에 의한 피부 주름 형성의 개선에 미치는 효능을 검증해 보고자 하였다. 우선 사람 섬유아세포를 이용하여 생강나무 추출물의 세포증식과 타입 I 콜라겐의 생합성 활성을 측정하였다. 그 결과 생강나무 추출물에 의한 세포증식과 타입 I 콜라겐의 생합성능은 대조군과 비교하여 각각 33.8 %와 91.8 % 증식함을 보였다. 동물실험에서는 SKH-1 무모쥐에 일주일에 3번 UV를 조사하면서 5 % 생강나무 추출액을 국부적으로 도포하였다. 10주 후에는 각각의 무모쥐의 피부 모사판을 제작하여 관찰하였다. 광노화에 의한 주름형성에 미치는 영향을 알아보고자 UVB를 무모쥐의 피부조직에 조사한 후 생강나무 추출액을 도포하여 피부 상태를 관찰하였다. 모사판을 접사카메라를 이용하여 관찰한 결과 5 % 생강나무 추출액의 도포는 생강나무가 포함되지 않은 도포액을 도포한 대조군에 비해 UV에 의해 생성되는 주름 형성 억제에 영향을 주는 것으로 나타났다. 이러한 결과로 생강나무 추출액의 도포는 광노화에 의한 피부주름 생성을 억제하고 피부를 보호하는 효과가 있을 것으로 판단된다.

• 한국진공학회지
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• 제21권6호
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• pp.301-311
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• 2012

결정질 태양전지 등의 도핑 공정에 적용하기 위한 플라즈마 제트 장치의 기초 방전 특성을 조사한다. 대기압에서의 아르곤 플라즈마 제트와 대기 압력변화에 대한 대기 플라즈마 제트, 그리고 아르곤 분위기 압력 변화에 대한 플라즈마 제트의 전류-전압은 전형적인 정상 글로우 방전의 특성을 갖는다. 대기압 플라즈마 제트의 방전 전압은 약 2.5 kV의 높은 전압이 요구되며, 대기 및 아르곤 플라즈마 제트는 200 Torr 이하의 낮은 압력에 대한 방전 전압은 약 1 kV가 된다. 도핑용 실리콘 웨이퍼에 조사되는 단일 채널 플라즈마 제트의 전류는 인가전압의 조정에 의하여 수 10~50 mA의 고 전류를 용이하게 얻는다. 플라즈마 제트를 웨이퍼에 조사하는 경우에 웨이퍼의 온도 상승은 정상상태에서 약 $200^{\circ}C$가 된다. 실리콘 웨이퍼에 도핑 용재인 액상의 인산을 도포하여 플라즈마를 조사한 결과 얻어진 인 원자의 도핑 분포는 플라즈마 제트 도핑의 가능성을 보여준다.