• Proceedings of the Korea Institute of Applied Superconductivity and Cryogenics Conference
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• 2003.02a
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• pp.98-100
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• 2003

PbTiO$_3$ films applicable to buffer layers for YBCO coated conductor have been successfully fabricated by sol-gel process. Crystallinity of grown films are heavily dependent on processing parameters such as annealing atmosphere and number of dipping. (100) oreinted PbTiO$_3$ films grown on (200) oriented Ni substrates exhibit uniform surface with small grain size(200~300nm).

• Proceedings of the Optical Society of Korea Conference
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• 2005.07a
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• pp.12-13
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• 2005

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.07a
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• pp.9-16
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• 2000

A survey over the role of sol-gel processing and metal alkoxides in the thin film preparation is given. The basic chemistry of the sol-gel process is complex due to the different reactivities of the network forming and the wide variety of reaction parameters. Despite the important progress in the investigations of the mechanisms of thin film formation, a direct relation of reaction parameters to functional oxide properties is still very difficult.

• Korean Journal of Materials Research
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• v.11 no.7
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• pp.603-608
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• 2001

$MO-SiO_2$ (M = Zn, Sn, In, Ag, Ni) binary silica gels were synthesized by sol-gel method and their structural change with the kind of metal ions was characterized by XRD, FT- IR and $^{29}$Si-NMR. Although X-ray analysis showed partial recrystallization of $AgNO_3$ in $Ag-SiO_2$gel, crystalline phase formed by the bonding between metal ion and the silica matrix didn't appear in all $MO-SiO_2$ gels. The FT-IR analysis showed that Zn, Sn and in partially formed Si-O-M bonding in silica matrix and made an shift of absorption peak to by Si-O-Si symmetrical vibration. In addition, $^{29}Si-NMR$ studies showed that Zn, Sn and In didn't affect sol-gel process of silica and were linked with non-bridging oxygen of the linear silica structure, which formed imperfect network because of low temperature sol-gel process. Ag and Ni make a role of catalysis on sol-gel process, resulting in densifying the silica network structure.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.07a
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• pp.814-819
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• 2000

The progress in the field of electronic materials has been especially significant for applications involving a range of electrical properties. Its importance is increasing with the increasing demand for integrated circuits. The sol-gel technique has been used for many years, and the metal alkoxides have featured prominently as source materials. The method consist of making a homogeneous solution of the component metal alkoxides in a suitable solvent, usually the parent alcohol; and then causing the hydrolysis under controlled conditions to produce a gel containing the hydrated metal oxide. The gel is then dried, and fired to produce a ceramic or glassy material at a temperature much lower than that required by the conventional melting process. This project consists of important theoretical considerations, processing techniques and applications related to electrophoresis derived thin films. In the electrophoretic process a metal alkoxide solution is gelled through hydrolysis-polymerization and converted the gel thin layer to an oxide by heating at relatively low temperatures.

• Journal of the Korean Ceramic Society
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• v.30 no.9
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• pp.695-700
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• 1993

In this study, we prepared Pb-Ti stock solution by sol-gel processing and deposited PbTiO3 thin film on a Pt coated SiO2/Si wafer by spin coating using the stock solution. We used lead acetate trihydrate and titanium isopropoxide. The stock solution was partially hydrolized and finally a 0.25M coating solution was prepared. We achieved spin coating at 4000rpm for 30 seconds and heated the thin film at 375$^{\circ}C$ for 5 minutes and at $600^{\circ}C$ for 5 minutes successively, first and second heating state. And the thin film was finally sintered at 90$0^{\circ}C$ for 1 hour in the air. The upper electrode of the thin film was made by gold sputtering and was cricle shape with radius 0.4mm. Measured dielectric constant, dissipation factor and phase transition temperature(Cuire Temp.) were about 275, 0.02 and 521$^{\circ}C$ respectively. To observe ferroelectric characteristics we calculated Pr(remnant polarization) and Ec(coercive field) byhysteresis curve. Ec was 72kV/cm and Pr was 11.46$\mu$C/$\textrm{cm}^2$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11b
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• pp.341-345
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• 2001

In this study, nano-sized powders of $Si0_2-0^{\sim}15mol%B_2O_3$ composition were prepared by sol-gel processing method using TEOS(Tetra ethyl ortho silicate) and $H_3BO_3$ solution. The powders were tape-cast on High silicate glass sheet(HSG) substrate and sintered to form a layer of undercladding for the planar light wave module, During the sol-gel processing, $H_2O/Si$ mole ratio were varied to modify the size of the powders in a range from 600 to 75nm. The dispersion of the powder was modified by changing the pH of the slurry. Sintering temperature of the tape was observed to decrease with the size of the powder and the $B_2O_3$ content in the powder. When the silica powders of 75-125nm in diameter containing 15mol% $B_2O_3$ were used, 98 TD% was obtained at $1250^{\circ}C$, which is approximately $300^{\circ}C$ reduction in sintering temperature compared with micrometer-sized powders.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11a
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• pp.341-345
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• 2001

In this study, nano-sized powders of SiO$_2$-0∼15mo1%B$_2$O$_3$ composition were prepared by sol-gel processing method using TEOS(Tetra ethyl ortho silicate) and H$_3$BO$_3$ solution. The powders were tape-cast on High silicate glass sheet(HSG) substrate and sintered to form a layer of undercladding for the planar light wave module. During the sol-gel processing, H$_2$O/Si mole ratio were varied to modify the size of the powders in a range from 600 to 75nm. The dispersion of the powder was modified by changing the pH of the slurry. Sintering temperature of the tape was observed to decrease with the size of the powder and the B$_2$O$_3$ content in the powder. When the silica powders of 75∼125nm in diameter containing 15mo1% B$_2$O$_3$ were used, 98 TD% was obtained at 1250$^{\circ}C$, which is approximately 300$^{\circ}C$ reduction in sintering temperature compared with micrometer-sized powders.

• Journal of Ceramic Processing Research
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• v.13 no.spc2
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• pp.428-432
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• 2012

Polyamidimide (PAI)-colloidal silica (CS) nanohybrid films were synthesized by an advanced sol-gel process. The synthesized PAI-CS hybrid films have a uniform and stable chemical bonding and there is no interfacial defects observed by TEM. The thermal degradation ratio of PAI-CS (10 wt%) hybrid films is delayed by 100 ℃ compared with pure PAI sample determined by on set temperature range in TGA. The dielectric constant of PAI-CS (10 wt%) hybrid films decreases with increasing CS content up to about 5 wt% but increases at higher CS content, which is not explained simply by effective medium therories (EMT). The duration time of PAI-CS (10 wt%) hybrid coil is 38 sec, which is very longer than that of pure PAI coil sample. The PAI-CS (10 wt%) hybrid film has a higher breakdown voltage resistance than the pure PAI film at surge environment and exhibits superior heat resistance. The PAI-CS (10 wt%) sample shows the advanced and stable thermal emission properties in transformer module compared with the pure PAI sample. This result illustrates that the advanced thermal conductivity and expansion properties of PAI-CS sample in the case of appropriate sol-gel processes brings the stable thermal emission in transformer system. Therefore, new PAI-CS hybrid samples with such stable thermal emission properties are expected to be used as a high functional coating application in ET, IT and electric power products.

• Journal of Ceramic Processing Research
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• v.21 no.6
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• pp.725-730
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• 2020

This study investigated the structural and electrical properties of thin K(Ta_0.6Nb_0.4)O₃ films for their applicability to electrocaloric devices. Both of the sol-gel and spin coating methods were used to fabricate thin films. Those sintered at 650 ℃ showed a KTN phase with pyrochlore of K₂Ta₂O₆, but those sintered at 750 ℃ showed pure polycrystalline phase without a pyrochlore phase. The lattice constants observed were a= 3.990nm. The dielectric constant rapidly decreased due to decrease in polarization of space charge approximately at an applied frequency of 10 kHz. The dielectric constant and loss at 30 ℃ of the thin films sintered at 750 ℃ were 3,617 and 0.264. The dielectric constant of the specimen sintered at 750 ℃ decreased to about -8.27 %/V according to the applied DC field. The remanent polarization and coercive field at 36 ℃ of the specimen sintered at 750 ℃ were 20.0 µC/cm² and 122.6 kV/cm. When the electric field of 247 kV/cm was applied to the specimen sintered at 750 ℃, the highest electrocaloric property of 3.02 ℃ was obtained.