• 제목/요약/키워드: sol-gel growth

검색결과 163건 처리시간 0.03초

$TiO_2$ 복합 분리막의 제조를 위한 졸-겔 코팅공정 분석 (Analysis of the Sol-Gel Coating Process for the Preparation of Supported TiO2 Composite Membranes)

  • 현상훈;최영민
    • 한국세라믹학회지
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    • 제29권5호
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    • pp.403-409
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    • 1992
  • The titania membrane thickness coated on the porous alumina support by the sol-gel method was analyzed using the slipcasting model. The thickness of calcined membrane layers increased linearly from 1.3 to 3.8 ${\mu}{\textrm}{m}$ with the square root of the dipping time (4~40 min). Growth rates of the thickness of wet gels and calcined layers were well described quantitatively by the slipcasting model. Through the regression of experimental data using model equations, the permeability and the pressure drop across wet gels, and the thickness and their growth rate constants of wet gels and calcined layers could be determined. It was also known that the gellation concentration of the TiO2 sol used in this work and the porosity of wet gel layes were 25 mol/ι and 0.53, respectively.

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졸 - 겔법에 의한 바륨헥사알루미네이트 합성 (Synthesis of barium hexaaluminate by sol - gel method)

  • 백영순;김형진
    • 한국결정성장학회지
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    • 제5권2호
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    • pp.142-151
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    • 1995
  • 금속 알콕사이드법에 의해 복합 알콕사이드를 합성하고, 이를 sol - gel법으로 가수분해 반응시켜 얻은 전구체를 소성하여 barium hexaaluminate를 제조하였다. 복합 알콕사이드 합성시 알코올의 종류 및 양, 반응시간을 변화시켜 barium hexaaluminate 전구체 물성에 미치는 영향을 관찰하였으며, 가수 분해시 물의 양 및 반응온도, 그리고 숙성시간에 따른 barium hexaaluminate의 비표면적과 입자크기에 미치는 영향을 알아보았다.

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Sol-Gel 법에 의한 $Li_2O-Al_2O_3-TiO_2-SiO_2$ 계 다공성 결정화 유리의 제조 : (II) Sol-Gel 법에 의해 제조된 $Li_2O-Al_2O_3-TiO_2-SiO_2$ 계 괴상겔의 결정화 (Preparation of Glass-Ceramics in $Li_2O-Al_2O_3-TiO_2-SiO_2$ System by Sol-Gel Technique : (II) Crystallization of $Li_2O-Al_2O_3-TiO_2-SiO_2$ Monolithic Gel Prepared by Sol-Gel Method)

  • 조훈성;양중식
    • 한국세라믹학회지
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    • 제32권4호
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    • pp.507-515
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    • 1995
  • The monolithic dry gels of the Li2O-Al2O3-TiO2-SiO2 system were prepared by the sol-gel technique using metal alkoxides as starting materials to obtain monolithic glass-ceramics at low temperature without melting. Activation energy for the crystal growth of the gel with 6.05% TiO2, nucleating ageng, for the preparation of Li2O-Al2O3-TiO2-SiO2 system glass-ceramic was 101.14kcal/mol. As a result of the analysis of DTA & XRD, it was confirmed that the crytallization of Li2O-Al2O3-TiO2-SiO2 system glass-ceramic was the most efficient when 6.05% TiO2, nucleating agent, was added. $\beta$-eucryptite solid solution crystals and $\beta$-spodumene solid solution crystals were detected in the sample heat treated above 85$0^{\circ}C$. The sintered gel heat treated at 85$0^{\circ}C$ had the specific surface area of 185$m^2$/g, the pore volume of 0.19cc/g and the average pore radius of 20.8$\AA$. This shows that the sintered gel is also comparatively porous material. In temperature range of 25~85$0^{\circ}C$ thermal expansion coefficient of the specimen which was crystallized for 10hrs at 85$0^{\circ}C$ was 6.7$\times$10-7/$^{\circ}C$, which indicated that the crystallized specimen was turned out to be the glass-ceramic with low thermal expansion.

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Sol-Gel 법을 이용한 칼슘-알루미네이트계 전자화물 박막의 제조와 특성 (Fabrication and properties of Calcium-aluminate electride thin films using by sol-gel process)

  • 김경훈;박주석;채재홍;서원선;소성민;김태관;김형순;이병하
    • 한국결정성장학회지
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    • 제20권6호
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    • pp.262-266
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    • 2010
  • Sol-gel법을 적용하여 $12CaO{\cdot}7Al_2O_3$(C12A7) 전자화물 박막을 제조하기 위해 CaO-$Al_2O_3$ sol을 제조하여 dip 코팅법을 적용하여 quartz 기판에 박막을 형성하였으며 열처리를 통해 C12A7의 박막을 제조하였다. C12A7 상의 형성 $800^{\circ}C$에서 시작되었고 $1,200^{\circ}C$ 온도에서 1시간 열처리를 통해 치밀화된 박막을 제조할 수 있었다. 제조된 C12A7 박막은 부도체였지만 수소 환원 분위기 열처리를 통해 전기전도도를 나타내기 시작했으며 $1,200^{\circ}C$ 48시간 열처리 시 120 S/cm의 전기전도도를 나타내었다.

Sol-Gel법에 의한 $ZrO_2/Al_2O_3$ 복합체의 제조에 미치느 Seeding 효과 (The Effect of Seeding on Preparation of $ZrO_2/Al_2O_3$ Composite by Sol-Gel Method)

  • 김선욱;주치홍;장윤식;손영국;박홍채
    • 한국세라믹학회지
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    • 제30권7호
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    • pp.571-577
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    • 1993
  • The effect of $\alpha$-Al2O3 seeding on preparation of zirconia/alumina gel fragment prepared by sol-gel processing was characterized through XRD, SEM, TG/DTA and IR analysis. Aluminum isopropoxide and zirconium butoxide were used as starting materials. $\alpha$-Al2O3 seeding restrained grain growth of alumina and zirconia, and decreased tetragonal to monoclinic phase transformation of zirconia on cooling. Therefore, fine zirconia-toughened alumina composite having the relative sintered density of about 98% of theoretical at 140$0^{\circ}C$ for 2h could be obtained.

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Crystal growth and optical properties with preheating temperature of sol-gel derived ZnO thin films

  • Kim, Young-Sung;Lee, Choong-Sun;Kim, Ik-Joo;Ko, Hyung-Duk;Tai, Weon-Pil;Song, Yong-Jin;Suh, Su-Jeung
    • 한국결정성장학회지
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    • 제14권5호
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    • pp.187-192
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    • 2004
  • We try to use isopropanol which has low boiling point to prepare ZnO thin films at low temperature. ZnO thin films were prepared by sol-gel spin-coating method using zinc acetate dehydrate-isopropanol-monoethanolamine (MEA) solution. The c-axis preferred orientation and optical properties of ZnO films with preheating temperature have been investigated. ZnO thin films were preheated at 200 to $300^{\circ}C$ with an interval of $25^{\circ}C$ and post-heated at $650^{\circ}C$. The ZnO film preheated at $275^{\circ}C$ and post-heated at $650^{\circ}C$ was highly oriented along c-axis (002) plane, and the surface with homogeneous and dense microstructures was formed having nano-sized grains. The optical transmittance was above 90 % in the visible range and exhibited absorption edges at 368 nm wavelength.

솔젤법에 의한 coated conductor용 산화물 완충층의 성장 (A Sol-Gel Growth of Oxide Buffer Layer for Coated Conductor)

  • 김영국;유재무;고재웅;허순영
    • 한국초전도저온공학회:학술대회논문집
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    • 한국초전도저온공학회 2003년도 학술대회 논문집
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    • pp.98-100
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    • 2003
  • PbTiO$_3$ films applicable to buffer layers for YBCO coated conductor have been successfully fabricated by sol-gel process. Crystallinity of grown films are heavily dependent on processing parameters such as annealing atmosphere and number of dipping. (100) oreinted PbTiO$_3$ films grown on (200) oriented Ni substrates exhibit uniform surface with small grain size(200~300nm).

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Sol-gel법에 의한 반강유전성 PbZrO3 박막 제작에 관한 연구 (A Study of Preparation of Antiferroelectric PbZrO3 Thin Films by Sol-Gel Processing)

  • 전기범;배세환
    • 한국안광학회지
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    • 제3권1호
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    • pp.15-19
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    • 1998
  • 이 연구의 목적은 lead zirconate 박막을 sol-gel 법으로 제작하는데 있어 Pb와 Zr의 혼합비에 따라 결정의 형성에 있어서 변화와 이에 따른 결정의 성장 선호 방향을 조사하였다. 기판으로는 Pt/Ti/$SiO_2$/Si를 사용하였으며, 결정 형성을 위한 온도는 $800^{\circ}C$로 1분간 유지하였다. Pb가 부족할 경우는 <221>방향으로의 성장이 두드러지고, Pb가 화학당량적 비를 만족한 이후는 <100>와 <221>이 같이 성장하게 된다. 그러나 이들은 모두 반강유전체로서의 특성을 나타내지만 뚜렷한 domain switching을 나타내지는 않는다.

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Surface treatment of sol-gel bioglass using dielectric barrier discharge plasma to enhance growth of hydroxyapatite

  • Soliman, Islam El-Sayed;Metawa, Asem El-Sayed;Aboelnasr, Mohamed Abdel Hameed;Eraba, Khairy Tohamy
    • Korean Journal of Chemical Engineering
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    • 제35권12호
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    • pp.2452-2463
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    • 2018
  • Surface treatment of sol-gel bioglass is required to increase its biomedical applications. In this study, a dielectric barrier discharge (DBD) plasma treatment in atmospheric pressure was performed on the surface of [$SiO_2-CaO-P_2O_5-B_2O_3$] sol-gel derived glass. The obtained bioglass was treated by plasma using discharge current 12 mA with an exposure period for 30 min. The type of discharge can be characterized by measuring the discharge current and applied potential waveform and the power dissipation. Apatite formation on the surface of the DBD-treated and untreated samples after soaking in simulated body fluid (SBF) at $37^{\circ}C$ is characterized by Fourier transform infrared spectroscopy (FTIR), X-Ray diffraction (XRD), inductively coupled plasma (ICP-OES) and scanning electron microscopy coupled with energy dispersive spectroscopy (SEM/EDS). We observed a marked increase in the amount of apatite deposited on the surface of the treated plasma samples than those of the untreated ones, indicating that DBD plasma treatment is an efficient method and capable of modifying the surface of glass beside effectively transforming it into highly bioactive materials.

Adhesion Reliability Enhancement of Silicon/Epoxy/Polyimide Interfaces for Flexible Electronics

  • Kim, Sanwi;Kim, Taek-Soo
    • 마이크로전자및패키징학회지
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    • 제19권3호
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    • pp.63-69
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    • 2012
  • Adhesion and mechanical reliability of silicon/epoxy/polyimide interfaces are critical issues for flexible electronics. Bonds between these interfaces are mainly hydrogen bonds, so their adhesion is weaker than cohesive fracture toughness and vulnerable to moisture. In order to enhance adhesion and suppress moisture-assisted debonding, UV/Ozone treatment and innovative sol-gel derived hybrid layers were applied to silicon/epoxy/polyimide interfaces. The fracture energy and subcritical crack growth rate were measured by using a double cantilever beam (DCB) fracture mechanics test. Results showed that UV/Ozone treatment increased the adhesion, but was not effective for improving reliability against humidity. However, by applying sol-gel derived hybrid layers, adhesion increase as well as suppresion of moisture-assisted cracking were achieved.