• Proceedings of the KIEE Conference
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• 2006.10a
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• pp.61-62
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• 2006

In this study, in order to develop the low temperature sintering ceramics for multilayer piezoelectric actuator, PMN-PNN-PZT ceramics using ${Fe_2}{O_3}$ and $WO_3$ as sintering aids were manufactured with the amount of $WO_3$ addition, and the specimens were sintered at 900, 930, $960^{\circ}C$, respectively. Thereafter, their dielectric and piezoelectric properties were investigated. The sintering aids were proved to lower the sintering temperature of piezoelectric ceramics due to the effects of ${Fe_2}{O_3}$ and $WO_3$ liquid phase. At 0.3wt% $WO_3$ added specimen sintered at $930^{\circ}C$, kp, Qm, dielectric constant and $d_{33}$ showed the optimum values of 0.60, 1402, 1440 and 360[pC/N], respectively, for multilayer piezoelectric actuator application.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.11a
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• pp.117-120
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• 1999

The relationship between the DC degradation characteristics of the ZnO varistor and the ambient sintering-process is investigated in this study. ZnO varistors made of Matsuoka's composition were fabricated by standard ceramic techniques. The ambient sintering-process is performed at the extraordinary electrical-furnace which is equipped with the vacuum system. The Gas of sintering process was oxygen, nitrogen, argon, air respectively. The microstructure of ZnO varistors be made use of SEM equipment. The condition of DC degradation tests were conducted at $115\pm2^{\circ}C$ for periods up to 13 h. Current-voltage analysis is used to determine nonlinear coefficients($\alpha$). Resistance-frequency and capacitance-frequency analysis are accomplished to the understanding of electrical properties as DC degradation test. From above analysis, it is found that the ZnO varistor sintered in oxygen atmosphere showed superior properties at the DC degradation test.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.11a
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• pp.253-254
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• 2007

In this study, in order to develop low temperature sintering multilayer piezoelectric actuator, PMN-PNN-PZT system ceramics were fabricated using $Li_2CO_3-Bi_2O_3$-CuO as sintering aids and their piezoelectric and dielectric characteristics were investigated as a function of heating rate. At sintering temperature of $900^{\circ}C$, with increasing heating rate, electromechanical coupling factor(kp), mechanical quality factor(Qm) and dielectric constant $({\varepsilon}_r)$ were increased.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.11a
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• pp.214-215
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• 2005

In this paper, in order to develop low temperature sintering piezoelectric ceramics for piezoelectric transformer, PMW-PMN-PZT ceramics using 0.25wt%$CaCO_3$ and 0.2wt%$Li_2CO_3$ as sintering aids were fabricated according to the variation of amount of PMW and Zr/Ti ratio. Specimens could be sintered at 900$^{\circ}C$ by adding sintering aids. As Zr/Ti ratio was increased, kp was increased and Qm was decreased by approaching MPB region, and kp showed the largest value of 0.58 at Zr/Ti:50/50. The variation of amount of PMN substitution affected the liquid phase sintering of the ceramics using sintering aids, and decreased piezoelectric properties.

• Electrical & Electronic Materials
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• v.1 no.3
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• pp.251-260
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• 1988

n형 GaAs에 음성접촉을 형성함에 있어서 Au-Ge 공융합금을 용해시키는 alloying 보다는 sintering을 필요로 하는 Su-Pd-Ge계의 새로운 융성접촉을 도입하였다. Au-Pd-Ge계의 최적의 음성조건을 조사하기 위하여 Au/Pd/Ge, Au/Ge/Pd, Au/Pd/Ge/Pd 그리고 Au/Pd/Au/Ge 음성접촉을 제조하였다. 비접촉저항을 조사하는데 있어서 sintering 온도는 390-450.deg.C사이였고 시간은 30초에서 6분 사이였다. Au-Pd-Ge계의 비접촉저항은 alloying된 Au/Pd/Ge 접촉의 그것에 필적할 만큼 낮았으며 특히 Au/Ge/Pd 접촉은 430.deg.C, 3분의 sintering 조건에서 가장 낮은 1.2*$10^{-6}$.OMEGA..$cm^{2}$의 비접촉저항을 나타냈다. Au/Ge/Pd 접촉의 표면형상 및 접촉패턴 가장자리는 450.deg.C에서 2분 이상 sintering된 접촉을 제외하고는 sintering 후에 as-deposited 상태와 다를 바가 없었다. 430.deg.C, 3분 sintering에서 가장 낮은 비접촉저항을 나타낸 Au/Ge/Pd 접촉의 비접촉저항은 430.deg.C에서 Ge/Pd 두께 변화에 비교적 변화가 적었다.

• Transactions on Electrical and Electronic Materials
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• v.16 no.4
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• pp.221-225
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• 2015

The sintering effect on the microstructure, electrical properties, and dielectric characteristics of ZnO-V₂O₅-MnO₂-Nb₂O₅-Dy₂O₃-based ceramics was investigated. With the increase of sintering temperature from 875 to 950℃, the density of the sintered pellets decreased from 5.57 to 5.45 g/cm³ and the average grain size increased from 4.3 to 10.9 μm. The breakdown field decreased noticeably from 6,095 to 996 V/cm with the increase of sintering temperature. The varistor ceramics sintered at 900℃ exhibited the best nonlinear properties: 39.2 in the nonlinear coefficient and 0.24 mA/cm² in the leakage current density. The dielectric constant increased sharply from 658.6 to 2,928.8 with the increase of sintering temperature. On the whole, the dissipation factor exhibited a fluctuation with the increase of the sintering temperature, and a minimum value of 0.284 at 900℃.

• Journal of Energy Engineering
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• v.19 no.3
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• pp.163-170
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• 2010

The objective of this study is to investigate the combustion characteristics of dual type of sintering burner as a function of design parameters using lab-scale sintering burner through experimental and numerical approaches. Combustion characteristics were evaluated by the radical method. The numerical model was verified as a temperature using R type of thermocouple at the bed surface. The effect of nozzle distance and angle were performed through the CFD analysis, and the comparison of burner types. As a results, dual type burner has more wider and uniform flame distribution than single type burner. Asymmetry and 45 degree angle condition have been suggested as an optimal condition for the ignition of the sintering bed surface.

• Journal of the Korean Ceramic Society
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• v.40 no.6
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• pp.560-565
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• 2003

M-doped (M=Al, Ni) ZnO thermoelectric materials were fully densified at low temperatures of 800∼1,000$^{\circ}C$ and their sintering characteristics and microstructural features were investigated. Electron microscopic analysis showed that the addition of NiO promoted tile formation of solid solution and caused actively grain growth. The addition of A1$_2$O$_3$ prevented the evaporation of pure ZnO at grain boundaries and suppressed the grain growth by the formation of secondary phase. In case of the addition of A1$_2$O$_3$ together with NiO, the specimen showed an excellent microstructure and also the SEM-EBSP (Electron Back-scattered Diffraction Pattern) analysis confirmed that it shows a superior grain boundary distribution to the others specimens. These microstructural characteristics induced by the addition of A1$_2$O$_3$ together with NiO may increase the electrical conductivity by the increase in carrier concentration and decrease the thermal conductivity by the phonon scattering effect and, consequently, improve the thermoelectric property.

• Korean Journal of Materials Research
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• v.34 no.6
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• pp.303-308
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• 2024

The semiconductor and display industries require the development of plasma resistant materials for use in high density plasma etching process equipment. Yttria (Y₂O₃) is a ceramic material mainly used to ensure good plasma resistance properties, which requires a dense microstructure. In commercial production, a sintering process is applied to reduce the sintering temperature of Y₂O₃. In this study, the effect of the addition of glass frit to the sintered specimen was examined when manufacturing yttria sintered specimens for semiconductor process equipment parts. The Y₂O₃ specimen was shaped into a Ø50 mm size and then sintered at 1,600 ℃ for 1~8 h. The characteristics, X-ray diffraction pattern, densities, contraction rate of the specimen, and swelling of the surface of the Y₂O₃ specimens were investigated as a function of the sintering time and glass frit addition. The Y₂O₃ specimen exhibited a density of over 4.9 g/cm³ as the sintering time increased, and the swelling phenomenon characteristics were improved by glass frit, by controlling particle size.

• Proceedings of the Korean Ceranic Society Conference
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• 2003.04a
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• pp.97.1-97
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• 2003