• Journal of the Korean Society of Manufacturing Process Engineers
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• v.21 no.7
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• pp.1-9
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• 2022

Peeling and dimensional deformation that occur during a manufacturing process are accompanied by an increase in the manufacturing cost and production time caused by manufacturing defects. In order to solve this problem, it is essential to predict risk factors at the design stage through computational analysis of the additive manufacturing process and to control shape distortion due to residual stress. In this study, the dimensional characteristics were improved by applying the distortion compensation design through computational analysis to minimize the distortion occurring in the DMLS(Direct Metal Laser Sintering) method of the metal additive manufacturing process.

• 한국연소학회:학술대회논문집
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• 2004.11a
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• pp.33-40
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• 2004

Combustion of coke/anthracite in an iron ore sintering bed is characterized quantitatively by introducing newly defined parameters related to propagation and thickness of combustion zone and maximum temperature. The parameters are obtained by sintering pot experiment and I-D, unsteady numerical model which treats solid material as multiple solid phases. Experiments and calculations are performed for various major operating parameters: air inlet velocity, different type of fuels which have different reactivity and diameter of the solid fuel. Effects of the operating parameters on the productivity and quality of the sintering process are investigated and evaluated quantitatively and the results show that optimized air supply rate and diameter of anthracite for replacement of coke can be obtained. This approach can be applied to other kinds of combustors for characterization of the combustion in the solid fuel beds.

• Journal of the Korean Ceramic Society
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• v.14 no.4
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• pp.236-241
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• 1977

Three kinds of specimen, consisting of the graded pyrophyllite particles alone, a substituent of 8 percent fire clay for the finer portion ($F_2$) of it, and 0.8 percent inorganic binder-added composite were prepared under the following conditions respectively; moisture content=4.5~5.0%, forming pressure=250kg/$\textrm{cm}^2$ and sintering temperature=1, 000~1, 30$0^{\circ}C$. The various properties such as modulus of rupture, apparent porosity, bulk specific gravity, pore size and pore distributiion were measured in order to collaborate with sintering phenomena. The results obtained are as follows: (1) Apparent porosity isgradually decreased with rising the sintering temperature to 1, 25$0^{\circ}C$. (2) The binder-added specimen showed the lowest value in porosity. (3) The optimum sintering temperature of specimens was considered to be 1, 25$0^{\circ}C$. (4) The wider differences between pore volumes of specimens could be obtained by method of mercurypenetration porosimeter than by the conventional method for porosity.

• Korean Journal of Materials Research
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• v.17 no.6
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• pp.298-302
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• 2007

The electrical properties and its stability of Zn-Pr-Co-Cr-Tb-based varistors were investigated for different sintering temperatures. As the sintering temperatures increased, the varistor voltage decreased in the range of $705.2{\sim}299.1$ V/mm, the nonlinear coefficient decreased in the range of $42.4{\sim}31.7$, and the leakage current was in the range of $1.0{\sim}1.7\;{\mu}A$. The stability of electrical characteristics increased with the increase of sintering temperature. The varistors sintered at $1350^{\circ}C$ marked the high electrical stability, with $%\Delta$ $V_{1mA}=+0.1%,\;%\Delta{\alpha}=+3.2%$, and $%{\Delta}I_L=+117.6%$ for DC accelerated aging stress state of $0.95V_{1mA}/150^{\circ}C/24\;h$.

• Transactions of Materials Processing
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• v.16 no.5 s.95
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• pp.396-400
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• 2007

LTCC(Low Temperature Co-fired Ceramic) which offers a good performance to produce multilayer structures with electronic circuits and components has emerged as an attractive technology in the electronic packaging industry. In LTCC module fabrication process, the lamination and the sintering are very important processes and affect the electrical characteristics of the final products because the processes change the permittivity of ceramics and the dimension of the circuit patterns which have influences on electronic properties. This paper discusses the influence of lamination pressure and sintering temperature on the permittivity and the dimensional change of LTCC products. In the present investigation, it is shown that the permittivity increases along with increasing of the lamination pressure and the sintering temperature.

• Electrical & Electronic Materials
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• v.8 no.1
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• pp.40-47
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• 1995

Electrical properties of ZnO ceramics based on Bi oxide was investigated in relation to sintering temperature. In the temperature range >$1150^{\circ}C$ to >$1350^{\circ}C$ the grain size increased from 9.mu.m to 20.mu.m when the sintering temperature was raised. The leakage current in the low voltage range increased as the potential barrier decreases, which is caused by increasing the grain size at high temperature. The dielectric characteristics of the ZnO ceramics was also affected by sintering temperature. Large dielectric constant was attributed, to the grainboundary layer of polycrystalline ZnO ceramics and decreasing grainboundary width. The variation of breakdown voltage with sintering temperature was attributed to the change of the donor concentration in the ZnO grain and grain size. The results showed that breakdown voltage increased decreasing grain size and donor concentration. Nonohmic coefficient was associated with the lower breakdown voltage per grainboundary layer due to the grain growth and higher donor concentration.

• Journal of the Korean Ceramic Society
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• v.33 no.2
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• pp.183-191
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• 1996

For the fabrication of semiconducting BaTiO3 ceramics at lower sintering temperature BN was selected as a sintering aid and the microsturcture of semiconducting BaTiO3 ceramics and PTCR characteristics by their microstructural changes were investigated. by adding BN to 0.1 mol% Sb2O3-doped BaTiO3 ceramics the sintering temperature showing semiconducting BaTiO3 ceramics was reduced by 16$0^{\circ}C$ from 130$0^{\circ}C$ to 114$0^{\circ}C$ and the specific resistivity ratio was increased as the amount of BN was increased.

• Korean Journal of Materials Research
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• v.16 no.8
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• pp.466-472
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• 2006

The electrical, dielectric properties, and its stability of ZPCCL-based varistors were investigated for different sintering temperatures in the range of $1230{\sim}1300^{\circ}C$. As the sintering temperatures increased, the varistor voltage decreased in the range of $777.9{\sim}108$ V/mm, the nonlinear coefficient decreased in the range of $77.9{\sim}7.1$, and the leakage current increased in the range of $0.3{\sim}50.6\;{\mu}A$. The stability of electrical and dielectric characteristics was obtained from sintering temperature of $1260^{\circ}C$. the varistors sintered at $1260^{\circ}C$ marked the high electrical and dielectric stability, with $%{\Delta}{V_{1mA}=+1.9%,\;%{\Delta}{\alpha}=-10.6%,\;%{\Delta}I_L=+20%\;and\;%{\Delta}tan\;{\delta}=+9.9%$ for DC accelerated aging stress state of $0.95V_{1mA}/150^{\circ}C$/24 h.

• Journal of the Korean Ceramic Society
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• v.25 no.6
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• pp.609-614
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• 1988

This study was carried out to investigate the effects of B4C or Y2O3 additives on the tendency of sintering, $\beta$-SiC synthesis and mineral phase changes by reaction bonding of SiC at 145$0^{\circ}C$. At the sintering temperature of 145$0^{\circ}C$, the additives such as B4C or Y2O3 did not improved porosity and bending strength. Added more than 1.5% of Y2O3, 0.5-0.3% of B4C, the formation of $\beta$-SiC was increased. At higher temperature above 145$0^{\circ}C$, it seems that the bodies added B4C, contained 3C form of SiC were denser than that of Y2O3 added. Because the transition of 3Clongrightarrow4Hlongrightarrow6H promoted sintering.

• Journal of the Korean Ceramic Society
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• v.43 no.9 s.292
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• pp.558-563
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• 2006

The electrical and dielectric properties of $ZnO-Pr_6O_{11}CoO-Cr_2O_3La_2O_3-based$ nonlinear resistors were investigated at different sintering temperatures in the range of $1230{\sim}1300^{|circ}C$. As the sintering temperature increased, the breakdown voltage decreased from 777.9 to 108.0V/mm, the nonlinear coefficient greatly decreased from 77.0 to 7.1, and the leakage current increased from $0.4{\mu}A\;to\;50.6{\mu}A$. On the other hand, the donor density from $0.90{\times}10^{18}\;to\;2.59{\times}10^{18}/cm^3$ and the barrier height decreased from 1.89 to 0.69 eV with increasing temperature. The dielectric dissipation factor increased from 0.0879 to 0.2839 for the increase of sintering temperature.