• Journal of the Korean Society for Precision Engineering
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• v.16 no.8
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• pp.100-105
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• 1999

This work analyses the effects of electrical conductivities of dielectric and cobalt amount on output parameters such as metal removal rate and the surface roughness value of cemented carbides cut by wire electrical discharge machining(W-EDM). Especially, the cracking behaviour of W-EDM machined surface and optimal machining condition of three kinds of cemented carbides, which have different chemical composition of tungsten carbide and cobalt are also tested. Experimental result shows that increases in cobalt content and electrical conductivity of the dielectric affect the metal removal rate and substantially worsen the final surface quality as a greater quantity of solidified metal deposits on the eroded surface.

• Journal of the Korean Ceramic Society
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• v.36 no.8
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• pp.799-804
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• 1999

Composites of SiC-Si3N4 consisted of uniformly distributed elongated $\beta$-Si3N4 grains and equiaxed $\beta$-SiC grains were fabricated with $\beta$-SiC,. $\alpha$-Si3N4 Al2O3 and Y2O3 powders. By hot-pressing and subsequent annelaing elongated $\beta$-Si3N4 grains were grown via$\alpha$longrightarrow$\beta$ phase transformation and equiaxed $\beta$-Si3N4 composites increased with increasing the Si3N4 content owing to the reduced defect size and enhanced crack deflection by elongated $\beta$-Si3N4 grains and the grain boundary strengthening by nitrogen incorporation. Typical flexural strength and fracture toughness of SiC-40 wt% Si3N4 composites were 783 MPa and 4.2 MPa.m1/2 respectively.

• Proceedings of the Korean Powder Metallurgy Institute Conference
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• 2006.09a
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• pp.621-622
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• 2006

In this paper, we show some experimental results of binder-free WC sintered by Pulsed Electric Current Sintering (PECS) also known as Field Assisted Sintering Technology (FAST). These binder-free WC have extremely hardness and stiffness. However, these mechanical properties are dependent on the sintering condition, e.g., maximum temperature, applied pressure, etc. We show some relationship between mechanical properties and sintering condition to improve to sinter the binder-free WC.

• Archives of Metallurgy and Materials
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• v.64 no.3
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• pp.883-888
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• 2019

439L stainless steel composites blended with fifteen micron SiC particles were prepared by uniaxial pressing of raw powders at 100 MPa and conventional sintering at 1350℃ for 2 h. Based on the results of X-ray diffraction analysis, dissolution of SiC particles were apparent. The 5 vol% SiC specimen demonstrated maximal densification (91.5%) among prepared specimens (0-10 vol% SiC); the relative density was higher than the specimens in the literature (80-84%) prepared by a similar process but at a higher forming pressure (700 MPa). The stress-strain curve and yield strength were also maximal at the 5 vol% of SiC, indicating that densification is the most important parameter determining the mechanical property. The added SiC particles in this study did not serve as the reinforcement phase for the 439L steel matrix but as a liquid-phase-sintering agent for facilitating densification, which eventually improved the mechanical property of the sintered product.

• Journal of Electrical Engineering and Technology
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• v.8 no.6
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• pp.1474-1480
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• 2013

Silicon carbide (SiC)-zirconium diboride ($ZrB_2$) composites were prepared by subjecting a 60:40 vol% mixture of ${\beta}$-SiC powder and $ZrB_2$ matrix to spark plasma sintering (SPS) in 15 $mm{\Phi}$ and 20 $mm{\Phi}$ molds. The 15 $mm{\Phi}$ and 20 $mm{\Phi}$ compacts were sintered for 60 sec at $1500^{\circ}C$ under a uniaxial pressure of 50 MPa and argon atmosphere. Similar composites were simulated using $Flux^{(R)}$ 3D computer simulation software. The current and power densities of the specimen sections of the simulated SiC-$ZrB_2$ composites were higher than those of the mold sections of the 15 $mm{\Phi}$ and 20 $mm{\Phi}$ mold simulated specimens. Toward the centers of the specimen sections, the current densities in the simulated SiC-$ZrB_2$ composites increased. The power density patterns of the specimen sections of the simulated SiC-$ZrB_2$ composites were nearly identical to their current density patterns. The current densities of the 15 $mm{\Phi}$ mold of the simulated SiC-$ZrB_2$ composites were higher than those of the 20 $mm{\Phi}$ mold in the center of the specimen section. The volume electrical resistivity of the simulated SiC-$ZrB_2$ composite was about 7.72 times lower than those of the graphite mold and the punch section. The power density, 1.4604 $GW/m^3$, of the 15 $mm{\Phi}$ mold of the simulated SiC-$ZrB_2$ composite was higher than that of the 20 $mm{\Phi}$ mold, 1.3832 $GW/m^3$. The $ZrB_2$ distributions in the 20 $mm{\Phi}$ mold in the sintered SiC-$ZrB_2$ composites were more uniform than those of the 15 $mm{\Phi}$ mold on the basis of energy-dispersive spectroscopy (EDS) mapping. The volume electrical resistivity of the 20 $mm{\Phi}$ mold of the sintered SiC-$ZrB_2$ composite, $6.17{\times}10^{-4}{\Omega}cm$, was lower than that of the 15 $mm{\Phi}$ mold, $9.37{\times}10^{-4}{\Omega}{\cdot}cm$, at room temperature.

• Journal of the Korean Society of Industry Convergence
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• v.23 no.1
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• pp.25-32
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• 2020

Generally, high-temperature, high-pressure, high-priced sintering equipment is used for diamond sintering, and conductivity is a problem for improving the surface modification of the sintered body. In this study, to improve the efficiency of diamond sintering, we identified a new process and material that can be sintered at low temperature, and attempted to develop a composite thin film that can be discharged by doping boron gas to improve the surface modification of the sintered body. Sintered bodies were sintered by mixing Si and two diamonds in different particle sizes based on CIP molding and HIP molding. In CVD deposition, CVD was performed using WC-Co cemented carbide using CH₄ and H₂ gas, and the specimen was made conductive using boron gas. According to the experimental results of the sintered body, as the Si content is increased, the Vickers hardness decreases drastically, and the values of tensile strength, Young's modulus and fracture toughness greatly increase. Conductive CVD deposited diamond was boron deposited and discharged. As the amount of boron added increased, the strength of diamond peaks decreased and crystallinity improved. In addition, considering the release processability, tool life and adhesion of the deposition surface according to the amount of boron added, the appropriate amount of boron can be confirmed. Therefore, by solving the method of low temperature sintering and conductivity problem, the possibility of solving the existing sintering and deposition problem is presented.

• The Korean Journal of Ceramics
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• v.2 no.4
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• pp.212-215
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• 1996

This paper focuses the strength and wear resistance of CVD diamond films. The strength of free-standing CVD diamond films synthesized by microwave plasm CVD, DC plasma CVD, RF plasma CVD and arc discharge plasma jet CVD has been measured by three-point bending test. The wear resistance of CVD diamod films has been evaluated by the pin-on-disk type testing. diamond films coated on the base of sintered tungsten carbide pin by hot filament CVD have been rubbed with a sintered diamond disk in muddy water. Volume removed wear of CVD diamond has been compared with stellite, WC alloy and bearing steel.

• Proceedings of the KSME Conference
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• 2001.06c
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• pp.64-70
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• 2001

This work deals with the electrical conductivity of dielectric and cobalt percentage on output parameters such as metal removal rate and surface roughness value of sintered carbides cut by wire-electrical discharge machining (W-EDM). To obtain a precise workpiece with good quality, some extra repetitive finish cuts along the rough cutting contour are necessary. Experimental results show that increases of cobalt amount in carbides affects the metal removal rate and worsens the surface quality as a greater quantity of solidified metal deposits on the eroded surface. Lower electrical conductivity of the dielectric results in a higher metal removal rate as the gap between wire electrode and workpiece reduced. Especially, the surface characteristics of rough-cut workpiece and wire electrode were analyzed too. To obtain a good surface equality without cracks, 4 finish-cuts were necessary by reducing the electrical energy and the offset value.

• Journal of Powder Materials
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• v.3 no.2
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• pp.86-90
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• 1996

The effects of added VC, Cr$_3$C$_2$ and TaC on the microstructures and properties of submicron WC-10%Co cemented carbides. The relative sintered density of compact was increased by addition of Cr$_3$C$_2$ but decreased oppositely by addition of VC or TaC. The growth of WC grains was significantly suppressed by addition of these carbides. The hardness of these alloys was increased by addition of other carbides and showed a maximum value by simultaneously added VC and Cr$_3$C$_2$. The transverse rupture strength(T.R.S.) was in- creased by addition of Cr$_3$C$_2$, while it was decreased by addition of VC or TaC. The relative sintered density and T.R.S. of these alloys were improved by HIP-treatment. The maximum T.R.S. was 328kg/mm$^2$ in the Wc-10%Co cemented carbide with addition of 0.5%VC.

• Journal of the Korean Ceramic Society
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• v.48 no.1
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• pp.52-56
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• 2011

Silicon carbide (SiC) is a candidate material for heat exchangers for VHTR (Very High Temperature Gas Cooled Reactor) due to its refractory nature and high thermal conductivity. This research has focused on demonstration of physical properties and mock-up fabrication for the future heat exchange applications. It was found that the SiC-based components can be applied for process heat exchanger (PHE) and intermediate heat exchanger (IHX), which are operated at $400{\sim}1000^{\circ}C$, based on our examination for the following aspects: optimum fabrication technologies (design, machining and bonding) for compact design, thermal conductivity, corrosion resistance in sulfuric acid environment at high temperature, and simulation results on heat transferring and thermal stress distribution of heat exchanger mock-up.