• ETRI Journal
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• v.27 no.5
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• pp.579-584
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• 2005

A CMOS direct-conversion mixer with a single transistor-level topology is proposed in this paper. Since the single transistor-level topology needs smaller supply voltage than the conventional Gilbert-cell topology, the proposed mixer structure is suitable for a low power and highly integrated RF system-on-a-chip (SoC). The proposed direct-conversion mixer is designed for the multi-band ultra-wideband (UWB) system covering from 3 to 7 GHz. The conversion gain and input P1dB of the mixer are about 3 dB and -10 dBm, respectively, with multi-band RF signals. The mixer consumes 4.3 mA under a 1.8 V supply voltage.

• Journal of Power Electronics
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• v.16 no.2
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• pp.532-541
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• 2016

A single-phase asymmetrical cascaded multilevel inverter is introduced with the goal of increasing power quality with the reduction of power in insulated-gate bipolar transistor (IGBT) switches. In the present work, the proposed inverter topology is analyzed and generalized with respect to different proposed algorithms for choosing different voltage source values. To prove the advantages of the proposed inverter, a case study involving a 17-level inverter is conducted. The simulation and experimental results with reduced THD are also presented and compared with the MATLAB/SIMULINK simulation results. Finally, the proposed topology is compared with different multilevel inverter topologies available in the literature in terms of the number of IGBT switches required with respect to the number of levels generated in the output of inverter topologies.