• 경영과학
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• 제29권2호
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• pp.79-90
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• 2012

Focusing on the rapid market penetration of smart phones, the importance of LBS (Location Based Service) is drastically increased. However, traditional GPS method has critical weakness caused by limited availability, such as indoor environment. WPS is newly attractive method as a widely applicable positioning method. In WPS, RSSI (Received Signal Strength Indication) data of all Wi-Fi APs (Access Point) are measured and stored into a huge database. The stored RSSI data in database make single radio fingerprint map. By the radio fingerprint map, we can estimate the actual position of target point. The essential factor of radio fingerprint database is data integrity of RSSI. Because of millions of APs in urban area, RSSI measurement data are seriously contaminated. Therefore, we present the unified filtering method for RSSI measurement data. As the results of filtering, we can show the effectiveness of suggested method in practical positioning system of mobile operator.

• 한국분무공학회지
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• 제9권4호
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• pp.9-16
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• 2004

A study of the propeny and performance effect of Indolene - Methanol Plus High Alcolhols (MPHA) has been completed. This study invested the measurement of fuel properties and performance parameters. The fuel properties investigated are distillation characteristics, heating valuer flash point, specific gravity and water tolerance. The performance parameters measured are minimum advance for best torque (MBT) spark timing, power output. The alcohol concentration was varied from 0 to 100 percent by volume in clear Indolene. The measurement of fuel properties indicated that, in general, Indolene - MPHA blends have higher water tolerance, similar specific gravity, similar flash point and different distillation characteristics compared to Indolene - Methanol blends. The performance parameters were measured using a single cylinder spark ignition engine at different compression ratios. The results of the performance measurements indicated that Indolene - MPHA blends have a higher MBT spark advance, similar power output.

• 한국결정성장학회지
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• 제11권6호
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• pp.274-284
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• 2001

A stoichimetric mixture of evaporating materials for $AgInS_2$ single crystal thin films was prepared from horizontal furnace. To obtain the single crystal thin films. $AgInS_2$mixed crystal was deposited on thorughly etched semi-insulating GaAs(100) substrate by the Hot wall Epitaxy (HWE) system. The source and substrate temperatures were $680^{\circ}C$ and $410^{\circ}C$, respectively. The crystalline structure of the single thin films was investigated by the photoluminescence and double crystal X-ray diffraction(DCXD). The carrier density and mobility of $AgInS_2$ single crystal the films measured from Hall effect by van der Pauw method are $9.35\times 10^{16}/\terxtm{cm}^3$ and $294\terxtm{cm}^2$/V.s at 293 K, respectively. From the optical absorption measurement the temperature dependence of the energy band gap on AgInS$_2$ single crystal thin film was found to be $E_g$(T)= 2.1365eV-($9.89\times 10^{-3}eV/T^2$/(2930+T). After the as-grown $AgInS_2$ single crystal thin films was annealed in $Ag^-S^-$ and In-atmospheres, the origin of point defects of AgInS$_2$ single crystal the films has been investigated by using the photoluminescence(PL) at 10K. The native defects of $V_{Ag},V_s, Ag_{int}$ and $S_{int}$ int/ obtained from PL measurements were classified as a donors or acceptors type. And we concluded that the heat-treatment in the S-atmosphere converted $AgInS_2$ single crystal thin films to an optical p-type. Also, we confirmed that In in $AgInS_2$ /GaAs did not form the native defects because In is $AgInS_2$ single crystal thin films did exist in the form of stable bonds.

• 한국측량학회지
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• 제15권2호
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• pp.195-206
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• 1997

단시간의 관측으로 해석이 가능한 고속스테틱 측량을 실시할 때에는 고가의 2주파 수신기가 필수적이었으나 최근에 이 문제점을 해결할 수 있는 GPS 측량기와 해석 소프트웨어가 개발되어 1주파형 GPS측량기를 이용한 고속스테틱 관측을 해석할 수 있게 되었다. 본 연구에서는 실제 현장실험을 통하여 단축스테틱 측량의 정밀도와 작업효율 등을 비교, 검토하여 공공기준점 측량에의 적용가능성을 제시하였다.

• 물과 미래
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• 제29권2호
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• pp.129-141
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• 1996

일점연속 채취, 멱 속도 분포 및 Laursen의 토사농도 분포식을 이용한 총 부유 유사량 계산방법을 제안하였다. 이 방법은 미국 리오그안데 강에서 채취한 자료에 의해 검증되었다. 이 방법으로 계산된 농도분포는 $\beta$, $\kappa$, 그리고 w의 보편적인 값을 사용하여 계산한 보정 전수심 채취방법과 잘 일치하였다. 지역특성에 맞는 농도와 속도 분포식의 계수 x 와 z를 사용하였을 때는 더 좋은 결과를 얻을 수 있었다. 일점 채취에 사용한 이 방법과 일반적으로 많이 쓰는 전수심 채취를 사용한 방법과의 총 유사량의 차이는 채취때 생길 수 있는 오류 정도로 작은 것이었다. 일점 연속 채취에 의한 총 부유 유사량 측정은 여러 가지 중요한 이점을 가지고 있다. 채취 시간에 및 비용을 절감할 수 있으며 채취를 자주 할 수 있고 유사량 변화에 신속하게 대응할 수 명실상부 또한 이 방법은 미래에 추구해야 할 자동채취 방법으로 사용될 수 있다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 하계학술대회 논문집
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• pp.257-265
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• 2002

A stoichiometric mixture of evaporating materials for AgInS$_2$ single crystal thin films was prepared from horizontal furnace. To obtain the single crystal thin films, AgInS$_2$ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the Hot Wall Epitaxy(HWE) system. The source and substrate temperatures were 680 $^{\circ}C$ and 410 $^{\circ}C$, respectively. The crystalline structure of the single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction(DCXD). The carrier density and mobility of AgInS$_2$ single crystal thin films measured from Hall effect by van der Pauw method are 9.35${\times}$10$\^$16/ cm$\^$-3/ and 294 $\textrm{cm}^2$/V$.$s at 293 K, respectively. From the optical absorption measurement, the temperature dependence of the energy band gap on AgInS$_2$ single crystal thin films was found to be E$\_$g/(T) : 2.1365 eV - (9.89 ${\times}$ 10$\^$-3/ eV) T$^2$/(2930 + T). After the as-grown AgInS$_2$ single crystal thin films was annealed in Ag-, S-, and In-atmospheres, the origin of point defects of AgInS$_2$ single crystal thin films has been investigated by using the photoluminescence(PL) at 10 K. The native defects of V$\_$AG/, V$\_$S/, Ag$\_$int/, and S$\_$int/ obtained from PL measurements were classified as a donors or acceptors type. And we concluded that the heat-treatment in the S-atmosphere converted AgInS$_2$ single crystal thin films to an optical p-type. Also, we confirmed that In in AgInS$_2$/GaAs did not form the native defects because In in AgInS$_2$ single crystal thin films did exist in the form of stable bonds.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 2003년도 하계종합학술대회 논문집 Ⅳ
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• pp.2192-2195
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• 2003

This parer proposes a power-line phase measurement algorithm which is based on the recursive implementation of sliding-DFT. Usage of the single DFT coefficient in the conventional sliding-DFT based power-line phase measurement brings a significant error propagation when implemented in hardware with finite word-length arithmetic operations. The proposed algorithm utilizes all the N-point DFT coefficients in the recursion. Performance degradation caused by the finite word- length implementation of the algorithm is analyzed and verified with computer simulations. The robustness of the proposed phase measurement algorithm against the erroneous implementation is also confirmed by the performance analysis and simulation.

• Current Optics and Photonics
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• 제7권4호
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• pp.337-344
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• 2023

Three-point bending is the main method for measuring the elastic modulus of a thin plate. Although various displacement transducers may be used to measure the bending, these are single-point measurements, and it is difficult to eliminate the error caused by eccentric load and shear force. Error-correction models for the elastic modulus of quartz glass using digital speckle interferometry are proposed for eccentric load and shear force. First, the positional misalignment between maximum deflection and load is analyzed, and the error caused by eccentric load is corrected. Then, the additional displacement caused by shear force at different positions of the quartz glass plate is explored. The effect of shear deformation is also corrected, by measuring two points. Since digital speckle interferometry has the advantage of full-field measurement, it can simultaneously obtain deflection data for multiple points to realize error correction. Experimental results are presented to demonstrate that the proposed model can effectively correct the measurement error of the elastic modulus.

• 대한금속재료학회지
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• 제50권2호
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• pp.146-151
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• 2012

The present article shows how the fracture strength of single crystal silicon chips, which are generally used as semiconductor devices, is influenced by loading rate variation during a 3-point bending test. It was found that the fracture strength of the silicon chips slightly increases up to 4% with increasing loading rate for loading rates lower than 20 mm/min. Meanwhile, the fracture strength of the chips hardly increases with increase of loading rate to levels higher than 40 mm/min. However, there was an abrupt transition in the fracture strength within a loading rate range of 20 mm/min to 40 mm/min. This work explains through microscopic examination of the fracture surface of all test chips that such a big transition is related to the deflection of crack propagation direction from the (011) [${\bar{1}}00$] system to the (111) [${\bar{2}}11$] system in a particular loading rate (i.e. from 20 mm/min to 40 mm/min).

• Journal of Astronomy and Space Sciences
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• 제19권4호
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• pp.385-394
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• 2002

SLR(Satellite Laser Ranging)은 위성과 관측소간 거리를 가장 정밀하게 측정할 수 있는 시스템이다. 1964년 발사된 Beacon-B 위성의 궤도결정을 위해 SLR 기술이 처음 사용되었는데 거리측정 정밀도가 m 수준이었다. 현재 single shot 정밀도는 cm, NP(Normal Point)는 mm수준으로 발전하였다. 이 연구에서는 SLR을 이용한 궤도결정 알고리즘을 개발하여 GPS(Global Positioning System)-36위성의 정밀 궤도를 결정하였다. 알고리즘의 정밀도를 검증하기 위해 산출한 정밀 궤도를 IGS(International GPS Service)에서 제공하는 정밀 궤도력과 비교하였는데 74cm의 RMS(Root Mean Square)를 얻었다. 또한, SLR 시스템의 관측잔차 RMS는 55mm 미만으로 알려져 있지만 이 연구에서는 44mm 결과를 얻을 수 있었다.