• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 추계학술대회 논문집 Vol.21
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• pp.141-142
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• 2008

Single crystal $ZnIn_2S_4$ layers were grown on thoroughly etched semi-insulating GaAs(100) substrate at $450^{\circ}C$ with hot wall epitaxy (HWE) system by evaporating $ZnIn_2S_4$ source at $610^{\circ}C$. The temperature dependence of the energy band gap of the $ZnIn_2S_4$ obtained from the absorption spectra was well described by the Varshni's relation, $E_g$(T) = 2.9514eV - ($7.24\times10^{-4}$ eV/K)$T^2$/(T + 489 K). After the as-grown $ZnIn_2S_4$ single crystal thin films was annealed in Zn-, S-, and In-atmospheres, the origin of point defects of $ZnIn_2S_4$ single crystal thin films has been investigated by the photoluminescence(PL) at 10 K. The native defects of $V_{Zn}$, $V_s$, $Zn_{int}$, and $S_{int}$, obtained by PL measurements were classified as a donors or acceptors type. And we concluded that the heat-treatment in the S-atmosphere converted $ZnIn_2S_4$ single crystal thin films to an optical p-type. Also, we confirmed that In in $ZnIn_2S_4$/GaAs did not form the native defects because In in $ZnIn_2S_4$ single crystal thin films existed in the form of stable bonds.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 추계학술대회 논문집 Vol.21
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• pp.98-99
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• 2008

To obtain the single crystal thin films, $AgGaSe_2$ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the hot wall epitaxy (HWE) system. The source and substrate temperatures were $630^{\circ}C$ and $420^{\circ}C$, respectively. The temperature dependence of the energy band gap of the $AgGaSe_2$ obtained from the absorption spectra was well described by the Varshni's relation, $E_g$(T) 1.9501 eV - ($8.79\times10^{-4}$ eV/K)$T^2$/(T + 250 K). After the as-grown $AgGaSe_2$ single crystal thin films was annealed in Ag-, Se-, and Ga-atmospheres, the origin of point defects of $AgGaSe_2$ single crystal thin films has been investigated by the photoluminescence(PL) at 10K. The native defects of $V_{Ag}$, $V_{Se}$, $Ag_{int}$, and $Se_{int}$ obtained by PL measurements were classified as a donors or acceptors type. And we concluded that the heat-treatment in the Ag-atmosphere converted $AgGaSe_2$ single crystal thin films to an optical p-type. Also, we confirmed that Ga in $AgGaSe_2$/GaAs did not form the native defects because Ga in $AgGaSe_2$ single crystal thin films existed in the form of stable bonds.

• 한국산학기술학회논문지
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• 제10권3호
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• pp.535-541
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• 2009

본 논문에서는 단상 MJ81 전기선로전환기 국산화를 위한 구동부의 성능 개선 및 이의 시험에 대한 내용을 기술하고 있다. 한국철도기술연구원 및 삼성 SDS에서는 기존철도기술개발사업을 통해 기존선의 속도 및 안전성 향상을 위해 단상 모터 규격 및 신뢰성 등의 검토를 실시하였으며 국산화 개발의 타당성 검토 및 기능과 성능 규격을 제정하여 이에 따른 시험 절차를 체계화하였다. 또한 이와 병행하여 MJ8l형 전기선로전환기에 사용 가능한 단상 220V 모터를 삼성SDS와 공동으로 개발 완료한 후, 종합시험장치에 개발품을 장착하여 총 20만회에 달하는 내구성 시험을 수행하여 성공적으로 성능을 입증하였다.

• 한국결정성장학회지
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• 제11권6호
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• pp.274-284
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• 2001

A stoichimetric mixture of evaporating materials for $AgInS_2$ single crystal thin films was prepared from horizontal furnace. To obtain the single crystal thin films. $AgInS_2$mixed crystal was deposited on thorughly etched semi-insulating GaAs(100) substrate by the Hot wall Epitaxy (HWE) system. The source and substrate temperatures were $680^{\circ}C$ and $410^{\circ}C$, respectively. The crystalline structure of the single thin films was investigated by the photoluminescence and double crystal X-ray diffraction(DCXD). The carrier density and mobility of $AgInS_2$ single crystal the films measured from Hall effect by van der Pauw method are $9.35\times 10^{16}/\terxtm{cm}^3$ and $294\terxtm{cm}^2$/V.s at 293 K, respectively. From the optical absorption measurement the temperature dependence of the energy band gap on AgInS$_2$ single crystal thin film was found to be $E_g$(T)= 2.1365eV-($9.89\times 10^{-3}eV/T^2$/(2930+T). After the as-grown $AgInS_2$ single crystal thin films was annealed in $Ag^-S^-$ and In-atmospheres, the origin of point defects of AgInS$_2$ single crystal the films has been investigated by using the photoluminescence(PL) at 10K. The native defects of $V_{Ag},V_s, Ag_{int}$ and $S_{int}$ int/ obtained from PL measurements were classified as a donors or acceptors type. And we concluded that the heat-treatment in the S-atmosphere converted $AgInS_2$ single crystal thin films to an optical p-type. Also, we confirmed that In in $AgInS_2$ /GaAs did not form the native defects because In is $AgInS_2$ single crystal thin films did exist in the form of stable bonds.

• Korean Journal of Acupuncture
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• 제29권1호
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• pp.23-36
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• 2012

Objectives : This study was conducted to investigate effective treatment point selection method using oppressive pain in acupoints as elementary attempt for standard methodology of clinical acupuncture studies. Methods : Twenty seven subjects with hypertension or within prehypertension category - systolic and diastolic blood pressure (BP) over 120/80mmHg - were divided into two groups, oppressive pain point treatment group and oppressive painless point treatment group. In oppressive pain point treatment group, single point acupuncture (SPA) was conducted for 16 sessions during 8 weeks on most oppressive painful point among 6 selected acupuncture points used in previous trials and clinic. As a SPA intervention, 15 minutes with deqi sensation- elevating manipulation was conducted on the treatment acupoint. Same process was conducted in oppressive painless point treatment group on most oppressive painless point with subject blinding. Results : Significant reduction was observed in both systolic and diastolic BP after short time intervention (15.5/8.8 mmHg, 10.7/7.1 mmHg, P<0.05, respectively at 1 week) and maintained for 8 weeks intervention period in all groups (12.8/8.0 mmHg, 19.4/12.6 mmHg, P<0.05, respectively). No significant difference of BP change between oppressive pain point treatment group (N=10) and oppressive painless point treatment group (N=9) was observed during 8 weeks study period. Conclusions : SPA treatment as used in this pilot study was effective for lowering BP in mild hypertensive population, but oppressive pain in acupoint had no effect on treatment. This present result suggests the possibility of SPA for hypertension treatment regardless of oppressive pain.

• 한국안광학회지
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• 제14권4호
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• pp.45-51
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• 2009

목적: 본 연구는 단초점렌즈와 VDT 증후군 개선을 위해 설계된 기능성렌즈를 착용하고 4시간 동안 VDT 작업 전과 후의 임상성능과 시각적인 문제에 대하여 설문조사를 비교 분석하자 한다. 방법: 20~45세의 남 여 30명을 대상으로 단초점렌즈와 기능성렌즈(ad Plus, HANDOK OPTEC Co.)를 각각 착용시킨 후 4시간 동안 VDT 작업 전과 후의 근거리 및 원거리시력, 등가구면굴절력의 변화, 조절근점, 폭주근점, AC/A ratio, 조절용이성 등을 검사하고, 시각적인 문제에 대한 자각증상을 설문조사하였다. 결과: 단초점렌즈와 비교하여 기능성렌즈를 착용했을 때 근거리시력, 조절근점, 폭주근점, 조절용이성이 유의하게 개선되었다. 4시간 동안 VDT 작업 후의 시각적 문제점에 대한 항목의 평균 점수는 단초점렌즈에서 3.63 ${\pm}$ 0.75이고, 기능성렌즈에서 4.69 ${\pm}$ 0.83으로 기능성렌즈가 유의하게 개선된 것으로 조사되었다. 결론: 기능성렌즈가 단초점렌즈보다 4시간 동안 VDT 작업 후의 조절기능 및 시각적 문제점 개선에 도움이 되는 우수한 렌즈로 생각된다.

• 한국수소및신에너지학회논문집
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• 제28권2호
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• pp.212-219
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• 2017

As an environmental pollution and global warming due to an excessive carbon emission are intensified, the importance of renewable energy is in rise today. TCP (Tidal Current Power), one of the renewable energy sources, generates electricity by converting kinetic energy of current into rotational energy of turbine. Also the TCP has a great advantages of predictability and reliability. Because the generating power is proportional to cubic of stream velocity, amplifying current speed by applying duct is highly effective to increase the generating power. SPM (Single Point Mooring) can be applied for the weather vane with various current direction and also augments generating power of the system. In addition, simple installation and retrieval could be a merit of SPM system. By combining duct and SPM, TCP system for relatively low-speed-current and shallow water region can be feasible and economical. In this study, single point moored duct-type TCP system was designed and the motion of submerged structure was investigated in both numerical and experimental method. DNV wadam V4.8-1 and OrcaFlex 10.0a were used for the frequency and time domain motion analysis of system respectively. Duct model scaled by 0.05 of Froude conformity ratio and CWC (Circulate Water Channel) are used for experiment.

• 물과 미래
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• 제29권2호
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• pp.129-141
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• 1996

일점연속 채취, 멱 속도 분포 및 Laursen의 토사농도 분포식을 이용한 총 부유 유사량 계산방법을 제안하였다. 이 방법은 미국 리오그안데 강에서 채취한 자료에 의해 검증되었다. 이 방법으로 계산된 농도분포는 $\beta$, $\kappa$, 그리고 w의 보편적인 값을 사용하여 계산한 보정 전수심 채취방법과 잘 일치하였다. 지역특성에 맞는 농도와 속도 분포식의 계수 x 와 z를 사용하였을 때는 더 좋은 결과를 얻을 수 있었다. 일점 채취에 사용한 이 방법과 일반적으로 많이 쓰는 전수심 채취를 사용한 방법과의 총 유사량의 차이는 채취때 생길 수 있는 오류 정도로 작은 것이었다. 일점 연속 채취에 의한 총 부유 유사량 측정은 여러 가지 중요한 이점을 가지고 있다. 채취 시간에 및 비용을 절감할 수 있으며 채취를 자주 할 수 있고 유사량 변화에 신속하게 대응할 수 명실상부 또한 이 방법은 미래에 추구해야 할 자동채취 방법으로 사용될 수 있다.

• 정보처리학회논문지A
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• 제8A권4호
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• pp.419-428
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• 2001

집적회로 기술의 발달은 처리기의 속도를 계속적으로 증가시켜 왔다. 처리기 응용분야의 주요한 도전은 공유 메모리 다중 처리기 시스템에서 고성능 처리기들을 효과적으로 사용하고자 하는 것이다. 우리는 상호 연결망 문제가 소규모의 공유 메모리 다중처리기 시스템에서 조차 완전히 해결되었다고 생각하지 않는다. 그 이유는 공유버스의 속도는 새로운 강력한 처리기들의 대역폭 요구를 수용할 수 없기 때문이다. 지난 수년간 점대점 단방향 연결은 매우 가능성 있는 상호 연결망 기술로서 대두되었다. 단일 슬롯링은 점대점 상호 연결망의 가장 간단한 형태이다. 단일 슬롯링 구조의 단점은 링에서 처리기의 수가 증가함에 따라 메모리 접근지연 시간이 선형적으로 증가한다는 것이다. 이런 이유로 우리는 캐쉬 기반의 다중처리기 시스템에서 단일 슬롯링을 대체할 수 있는 이중 슬롯링 구조를 제안한다. 또한 본 논문에서 새로운 스누핑 프로토콜을 사용하는 이중 슬롯링 구조를 분석하고 분석적모델과 모의 실험을 통하여 기존의 단일 슬롯링과 성능을 비교한다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 하계학술대회 논문집
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• pp.257-265
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• 2002

A stoichiometric mixture of evaporating materials for AgInS$_2$ single crystal thin films was prepared from horizontal furnace. To obtain the single crystal thin films, AgInS$_2$ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the Hot Wall Epitaxy(HWE) system. The source and substrate temperatures were 680 $^{\circ}C$ and 410 $^{\circ}C$, respectively. The crystalline structure of the single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction(DCXD). The carrier density and mobility of AgInS$_2$ single crystal thin films measured from Hall effect by van der Pauw method are 9.35${\times}$10$\^$16/ cm$\^$-3/ and 294 $\textrm{cm}^2$/V$.$s at 293 K, respectively. From the optical absorption measurement, the temperature dependence of the energy band gap on AgInS$_2$ single crystal thin films was found to be E$\_$g/(T) : 2.1365 eV - (9.89 ${\times}$ 10$\^$-3/ eV) T$^2$/(2930 + T). After the as-grown AgInS$_2$ single crystal thin films was annealed in Ag-, S-, and In-atmospheres, the origin of point defects of AgInS$_2$ single crystal thin films has been investigated by using the photoluminescence(PL) at 10 K. The native defects of V$\_$AG/, V$\_$S/, Ag$\_$int/, and S$\_$int/ obtained from PL measurements were classified as a donors or acceptors type. And we concluded that the heat-treatment in the S-atmosphere converted AgInS$_2$ single crystal thin films to an optical p-type. Also, we confirmed that In in AgInS$_2$/GaAs did not form the native defects because In in AgInS$_2$ single crystal thin films did exist in the form of stable bonds.