• Journal of the Korean Ceramic Society
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• v.30 no.9
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• pp.717-722
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• 1993

Effects of microstructures on the electrical properties of ZrO2 based ceramics were analyzed by modeling layer arrangements and mixed phase structures. Single layers and alternating multilayers were made from 3mol% and 8mol% Y2O3 doped ZrO2 powders, while mixed specimen was made by blending and compacting these raw powders. After sintering at 150$0^{\circ}C$ for 2hr in air, AC impedance characteristics were measured. Contributiion of bulk comonent to total resistivity and its temperature-dependence were larger in 8Y-ZrO2 single layer than in 3Y-ZrO2 single layer. The multilayered specimen connected in serial to electrodes showed partial characteristics of both 3Y-ZrO2 and 8Y-ZrO2 single layers. The multilayered specimen connected in parallel to electrodes and the mixed specimen exhibited characteristics mainly of 8Y-ZrO2 single layer. The multilayered specimen connected in parallel to electrodes revealed the highest electrical conductivity near the operating temperature of solid oxide fuel cell. However, it is expected that the mixed specimen is appropriate for the applications because of its relatively high electrical conductivity with high strength expected.

• Journal of the Optical Society of Korea
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• v.1 no.2
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• pp.116-119
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• 1997

Highly quantum efficient and multi-color emissible polymer light emitting devices have been realized utilizing poly (1-dodecyloxy-4-methyl-1, 3-phenylene)(2, 5"-terthienylene)(hereafter, mPTTh polymer) as an emitting layer and tris(8-hydroxyquinoline) aluminum (Alq3) as an electron transport layer. A single layer EL device of mPTTh polymer emits orange-colored light. EL efficiency increases as the thickness of Alq3 layer increases, but the emission color becomes visually broad when the Alq3 layer thickness is greater than 30nm since the relative peak intensity of green EL from Alq3 layer grows. EL color is changed from orange to greenish orange as the thickness of Alq3 layer grows. EL color is changed from orange to greenish orange as the thickness of Alq3 layer increases. EL efficiency of the double layer device was greatly enhanced by 3000 times compared with that of a single layer device. Alq3 layer in device acts as a hole blocking electron transporting layer and an emitting layer as a function of the thickness of Alq3 layer.ayer.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2017.05a
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• pp.97-97
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• 2017

This study investigated the corrosion protection by electrodeposited copper layer on AZ31 Mg alloy with and without additional silver layer by immersion test, salt spray test, OCP transient and potentiodynamic polarization experiment. The single electrodeposited Cu layer on AZ31 Mg alloy showed a nodular structure with many imperfections of crevices between the nodules, which resulted in the fast initiation of pitting corrosion within first few hours of immersion. Double-layer coating of Cu and outer Ag layer slightly increased the initiation time for pitting corrosion. Triple-layer coatings of Cu/Ag/Cu exhibited the most efficient corrosion protection of AZ31 Mg alloy, compared to the single- and double-layer coatings. Surface morphology of the outer Cu layer in the triple-layer was changed from the nodular structure to fine particle structure with no crevices due to the presence of an additional Ag layer. Thus, the improved corrosion resistance of AZ31 Mg alloy by electrodeposited Cu/Ag or Cu/Ag/Cu layers is readily ascribed to the decreased number of imperfections in the electrodeposited layers due to the additional silver layer. It is concluded that the additional silver layer provides many nucleation sites for the second Cu plating, resulting in the formation of finer and denser structure than the first Cu electrodeposit.

• Proceedings of the Korean Vacuum Society Conference
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• 2015.08a
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• pp.259-259
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• 2015

Single crystalline indium-tin-oxide (ITO) nanowires (NWs) were grown by sputtering method. A thin Ni film of 5 nm was deposited before ITO sputtering. Thermal treatment forms Ni nanoparticles, which act as templates to diffuse Ni into the sputtered ITO layer to grow single crystalline ITO NWs. This Ni diffusion through an ITO NW was investigated by transmission electron microscope to observe the Ni-tip sitting on a single crystalline ITO NW. Meanwhile, a single crystalline ITO structure was found at bottom and body part of a single ITO NW without remaining of Ni atoms. This indicates the Ni atoms diffuse through the oxygen vacancies of ITO structure. Rapid thermal process (RTP) applied to generate an initial stage of a formation of Ni nanoparticles with variation in time periods to demonstrate the existence of an optimum condition to initiate ITO NW growth. Modulation in ITO sputtering condition was applied to verify the ITO NW growth or the ITO film growth. The Ni-assisted grown ITO layer has an improved electrical conductivity while maintaining a similar transmittance value to that of a single ITO layer. Electrically conductive and optically transparent nanowire-coated surface morphology would provide a great opportunity for various photoelectric devices.

• 한국정보디스플레이학회:학술대회논문집
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• 2009.10a
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• pp.1508-1510
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• 2009

In this work, we have compared OLED devices made of blended MEH-PPV/Ruburene mixture and MEH-PPV/Rubrene bi-layer structure devices. The emission layers were made with two different ways - one with gravure printed single layer of blended mixture of MEH-PPV and rubrene, the other with gravure printed bilayers of MEH-PPV and rubrene. Both brightness and efficiency with gravure printed bi-layer devices were higher than blended devices. In this work, we demonstrated that organic bi-layers can be formed with gravure printing technology and higher efficiency can be achieved with bi-layer structure than with blended single layer structure.

• Proceedings of the Korean Society of Machine Tool Engineers Conference
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• 2002.04a
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• pp.251-254
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• 2002

The technique of high speed machining is widely studied in machining field. In this study, TiAIN single-layered and TiAIN/TiN double-layered coatings were applied to end-mill by an arc ion plating technique. Their performances were comparatively studied about cutting force, tool wear, tool life and surface roughness of workpiece under high speed cutting conditions. The TiAIN single-layer coated tool showed higher wear-resistance due to its higher hardness, while the TiAIN/TiN double-layer coated tool showed better performance for high metal removal, i.e., high fled per tooth condition due to its higher toughness. The surface roughness of the workpiece was not influenced by the wear amount of coated tools.

• 한국신재생에너지학회:학술대회논문집
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• 2009.06a
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• pp.80-82
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• 2009

The dependence of the efficiency characteristics of hydrogenated amorphous silicon single junction solar cells on the various intrinsic layer thickness has been investigate in the glass/$SnO_2$:F/p,i,n a-Si:H/Al type of amorphous silicon solar cells by cluster PECVD system. The open circuit voltage, short circuit current, fill factor and conversion efficiency have been measured under AM 1.5 condition. The result of the cell performance was improved about 8.2% due to an increase in the short circuit current.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.19 no.6
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• pp.293-297
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• 2009

In this paper, we made three kinds of porous silicon samples (single layer, distributed Bragg reflector, and microcavity) by electrochemical etching p-type silicon substrate. And then, we investigated their reflectance spectrum properties. We found that the number of fringe patterns and the maximum reflectivity of porous silicon multilayer increased compared with a porous silicon sinlge layer. In addition, we can observe that the DBR (distributed Bragg reflector) porous silicon has a full-width at half-maximum about 33 nm which is narrower than the porous silicon single layer and porous silicon microcavity.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.429.1-429.1
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• 2014

We present a method of surface functionalization of a single layer graphene for linking and detecting MDA-MB-231 human breast cancer cell. The methodology is done by utilizing 1-pyrenebutanoic acid and succinimidyl ester for immobiling CD44 antibodies. This work shows that the single layer graphene is an efficient fixing substance to capture the MDA-MB-231 human breast cancer cell, selectively. The immobilization method of the cancer cell on the graphene layer will be an effective cell counting system. Moreover usage of the linking with non-covalent bonding is expected to develope a sensor scheme of electrical cell-detecting diagnosis system.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.204-205
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• 2011

In thin film silicon solar cells, p-i-n structure is adopted instead of p/n junction structure as in wafer-based Si solar cells. PECVD is a most widely used thin film deposition process for a-Si:H or ${\mu}c$-Si:H solar cells. For best performance of thin film silicon solar cell, the dopant profiles at p/i and i/n interfaces need to be as sharp as possible. The sharpness of dopant profiles can easily achieved when using multi-chamber PECVD equipment, in which each layer is deposited in separate chamber. However, in a single-chamber PECVD system, doped and intrinsic layers are deposited in one plasma chamber, which inevitably impedes sharp dopant profiles at the interfaces due to the contamination from previous deposition process. The cross-contamination between layers is a serious drawback of a single-chamber PECVD system in spite of the advantage of lower initial investment cost for the equipment. In order to resolve the cross-contamination problem in single-chamber PECVD systems, flushing method of the chamber with NH3 gas or water vapor after doped layer deposition process has been used. In this study, a new plasma process to solve the cross-contamination problem in a single-chamber PECVD system was suggested. A single-chamber VHF-PECVD system was used for superstrate type p-i-n a-Si:H solar cell manufacturing on Asahi-type U FTO glass. A 80 MHz and 20 watts of pulsed RF power was applied to the parallel plate RF cathode at the frequency of 10 kHz and 80% duty ratio. A mixture gas of Ar, H2 and SiH4 was used for i-layer deposition and the deposition pressure was 0.4 Torr. For p and n layer deposition, B2H6 and PH3 was used as doping gas, respectively. The deposition temperature was $250^{\circ}C$ and the total p-i-n layer thickness was about $3500{\AA}$. In order to remove the deposited B inside of the vacuum chamber during p-layer deposition, a high pulsed RF power of about 80 W was applied right after p-layer deposition without SiH4 gas, which is followed by i-layer and n-layer deposition. Finally, Ag was deposited as top electrode. The best initial solar cell efficiency of 9.5 % for test cell area of 0.2 $cm^2$ could be achieved by applying the in-situ plasma cleaning method. The dependence on RF power and treatment time was investigated along with the SIMS analysis of the p-i interface for boron profiles.