• Journal of the Korean Crystal Growth and Crystal Technology
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• v.19 no.1
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• pp.11-14
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• 2009

Yb and Zn co-doped $LiNbO_3$ single crystal rods which had a diameter of 2 mm and a length of $15{\sim}25 mm$ were grown by micro-pulling down (${\mu}-PD$) method. The single crystals were successfully grown and had a uniform diameter and a smooth surface without crack. We realized of $LiNbO_3$ single crystals were hexagonal structure to compare with peaks of $LiNbO_3$ powder by Raman spectra. The threshold level of Zn concentration which is effective for optical damage were observed as about 1 mol% with IR transmission spectra.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07a
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• pp.282-285
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• 2003

Single crystal $CuAlSe_2$ layers were grown on thoroughly etched semi-insulating GaAs(100) substrate at $410\;^{\circ}C$ with hot wall epitaxy (HWE) system by evaporating $CuAlSe_2$ source at $680\;^{\circ}C$. The crystalline structure of the single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). The carrier density and mobility of single crystal $CuAlSe_2$ thin films measured with Hall effect by van der Pauw method are $9.24{\times}10^{16}\;cm^{-3}\;and\;295\;cm^2/V{\cdot}s$ at 293 K, respectively. The temperature dependence of the energy band gap of the $CuAlSe_2$ obtained from the absorption spectra was well described by the Varshni's relation, $E_g(T)\;=\;2.8382\;eV\;-\;(8.68\;{\times}\;10^{-4}eV/K)T^2/(T\;+\;155\;K)$. The crystal field and the spin-orbit splitting energies for the valence band of the $CuAlSe_2$ have been estimated to be 0.2026 eV and 0.2165 eV at 10 K, respectively, by means of the photocurrent spectra and the Hopfield quasicubic model. These results indicate that the splitting of the $\Delta$so definitely exists in the ${\Gamma}_5$ states of the valence band of the $CuAlSe_2$. The three photocurrent peaks observed at 10 K are ascribed to the $A_1-$, $B_1-$, and $C_1$-exciton peaks for n = 1.

• Journal of Sensor Science and Technology
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• v.15 no.6
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• pp.397-405
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• 2006

Single crystal $AgGaSe_{2}$ layers were grown on thoroughly etched semi-insulating GaAs(100) substrate at $420^{\circ}C$ with hot wall epitaxy (HWE) system by evaporating $AgGaSe_{2}$ source at $630^{\circ}C$. The crystalline structure of the single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). The carrier density and mobility of single crystal $AgGaSe_{2}$ thin films measured with Hall effect by van der Pauw method are $4.05{\times}10^{16}/cm^{3}$, $139cm^{2}/V{\cdot}s$ at 293 K, respectively. The temperature dependence of the energy band gap of the $AgGaSe_{2}$ obtained from the absorption spectra was well described by the Varshni's relation, $E_{g}(T)$=1.9501 eV-($8.79{\times}10^{-4}{\;}eV/K)T^{2}$/(T+250 K). The crystal field and the spin-orbit splitting energies for the valence band of the $AgGaSe_{2}$ have been estimated to be 0.3132 eV and 0.3725 eV at 10 K, respectively, by means of the photocurrent spectra and the Hopfield quasicubic model. These results indicate that the splitting of the ${\Delta}So$ definitely exists in the ${\Gamma}_{5}$ states of the valence band of the $AgGaSe_{2}$. The three photocurrent peaks observed at 10 K are ascribed to the $A_{1}-$, $B_{1}-$, and $C_{1}-$exciton peaks for n=1.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.11a
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• pp.167-170
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• 2004

The stochiometric mix of evaporating materials for the $CuGaT_2$ single crystal thin films was prepared from horizontal furnance. Using extrapolation method of X-ray diffraction patterns for the $CuGaTe_2$ polycrystal, it was found tetragonal structure whose lattice constant $a_0$ and $c_0$ were 6.025 ${\AA}$ and 11.931 ${\AA}$, respectively. To obtain the single crystal thin films, $CuGaTe_2$ mixed crystal was deposited on throughly etched semi-insulator GaAs(100) substrate by the Hot Wall Epitaxy (HWE) system. The source and substrate temperature were $670^{\circ}C$ and $410^{\circ}C$ respectively, and the thickness of the single crystal thin films is $2.1{\mu}m$. The crystalline structure of single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). From the photocurrent spectrum by illumination of perpendicular light on the c - axis of the $CuGaTe_2$ single crystal thin film, we have found that the values of spin orbit coupling ${\Delta}s.o$ and the crystal field splitting ${\Delta}cr$ were $0.079\underline{1}eV$ and $0.246\underline{3}eV$ at 10 K, respectively. From the PL spectra at 10K, the peaks corresponding to free bound excitons and D-A pair and a broad emission band due to SA is identified. The binding energy of the free excitons are determined to be $0.047\underline{0}eV$ and the dissipation energy of the donor-bound exciton and acceptor-bound exciton to be $0.049\underline{0}eV$, $0.055\underline{8}eV$, respectively.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.1 no.1
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• pp.39-50
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• 1991

Single crystals of yttrium iron garnet $(YIG:Y_3Fe_5O_{12})$have been grown by a modified floating zone crystal growth technique(Traveling Solvent Floating Zone, TSFZ method) using an infrared radiation convergence type heater. A series of evaluations for the resulting YIG single crystals were carried out. The grown crystals are 5~6mm in diameter and 15~35mm in length. The conditions of single crystal growth were as follows; growth rate 1mm/h, rotation rate 30rpm, gas flow rate 0.2 1/min., zone aspect ratio 1, convexity of interface 0.29, respectively.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.5 no.2
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• pp.129-134
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• 1995

Bulk properties of single crystals $KMnCl_3$ undoped and Mg- doped $LiNbO_3$ were examined by using the neutron scattering technique. This study shows that the good -looking samples by polarized light have to be examined by the. neutron scattering to ensure the bulk properties of single crystal. Large mosaic spread in KMnCb indicated the crystal is not in a single domain. Many parts are relatively randomly directed against crystal axis with close angle each other. For the small mosaic spread of Li~ in the scattering pattern, it is found that some large domains have close orientations. Mg doped Li~ is turned out to be a well grown one.

• Proceedings of the Materials Research Society of Korea Conference
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• 1993.05a
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• pp.99-100
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• 1993

Calorimetric (D.S.C) studies were carried out on the nylon 4,6 single crystals grown from 1,4-butanediol solution at various crystallisation temperatures, based on the assessment of the lamellar thickness by small angle x-ray scattering. Samples were annealed mainly ot get rid of residual solvents inside the crystals. The effect of annealing on the crystal perfection is inferred from the measured thermal properties of the crystals. Accordig to the scanning rates less than 80 K/min., D. S C. melting peaks indicate that changes in the internal morphology of nylon 4,6 crystals preapred at different crystallisation temeratures yield a thermodynamic melting temperature. Tm, of 319 $^{\circ}C$, for the infinitely extended crystal thickness (1/ι). The obtained heat of fusion value for the inginite crystal thickness, Ho, was 270 J/g from the plot of measured feat of fusion ($\Delta$Hm) vs. reciprocal crystal thickness (1/ι). based on these values, the fold surface energy, $\delta$e. of 65.4 erg/$\textrm{cm}^2$ was obtained from Hoffman-Waeeks equation. The thermodynamic melting temperature and heat of fusion of the infinite crystal thickness for the solution grow nylon 4,6 single crystals are found to be higher than of the reported corresponding solution grown nylon 6,6 single crystals. pbtained crystallinity from D. S. C measurements ranges from 40 to 50 %, which is close to the reported yalue for the nylon 6,6 single ctystals but lower than we expected.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.07a
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• pp.381-384
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• 2004

The stochiometric nix of evaporating materials for the $AgInS_2$ single crystal thin films were prepared from horizontal furnace. The polycrystal structure obtaind from the power x-ray diffraction was chalcopyrite. The lattice costants $a_0\;and\;c_0$ were $a_0=5.86(5.82)\;A,\;c_0=11.355(11.17)\;A$. To obtains the single crystal thin films, $AgInS_2$ mixed crystal were deposited on throughly etched GaAs(100) by the Hot Wall Epitaxy(HWE) system. The temperates of the source and the substrate were $590^{\circ}C\;and\;450^{\circ}C$, respectively. The crystalline structure of single crystal thin films was investigated by the double crystal X-ray diffraction(DCXD). Hall effect on this sample was measured by the method of van der Pauw and studied on carrier density and mobility dependence on temperature. In order to explore the applicability as a photoconductive cell, we measured the sensitivity($\gamma$), the ratio of photocurrent to dark current (pc/dc), maximum allowable power dissipation(MAPD), spectral response and response time.

• Journal of Applied Biological Chemistry
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• v.44 no.4
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• pp.163-166
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• 2001

Piezoelectric (PZ) crystal biosensor system was used to detect the DNA of food pathogenic Listeria monocytogenes. L. monocytogenes-specific DNA was multiplied via the polymerase chain reaction using LM1 oligonucleotide (5'-TTACGAATTAAAAAGGAGCG-3') and LM2 oligonucleotide (5'-TTAAATCAGCAGGGGTCTTT-3') as primers. DNA fragment of 161 bp, which was specific only for L. monocytogenes, was observed. To obtain a large amount of single-stranded DNA containing an SH group used for coupling to the gold electrode chemisorptively, LM1 oligonucleotide containing a mercaptohexyl group was utilized as a single strand PCR primer. The PCR product was immobilized onto the gold electrode of PZ crystal, and hybridization was monitored in quartz crystal microbalance (QCM) system by injecting the antisense single-stranded DNA of 161 nucleotides obtained via the single strand PCR using the unmodified LM2 primer. Approximately 70 Hz of frequency drop was observed in the QCM system in the case of two consecutive injections of $5{\mu}g$ of the antisense single-stranded DNA.

• The Transactions of the Korean Institute of Electrical Engineers P
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• v.58 no.4
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• pp.451-454
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• 2009

The $\beta-In_2Te_3$ single crystal was grown by vertical Bridgman method. The $\beta-In_2Te_3$ single crystal had a face centered cubic(fcc) structure. The lattice constants were found to be $a\;=\;0.617\;{\AA}$. The direct optical energy gap ($E_g$) was found to be 1.11 ev at 300 K. Raman spectra peak of $\beta-In_2Te_3$ single crystal showed the low $E_{LO}$ mode at $105\;cm^{-1}$. The electrical conduction type was measured by the thermal method and was p-type. The electrical conductivity was found to be $1.8\;{\times}\;10^{-2}\;{\Omega}^{-1}cm^{-1}$ at 300 K. The activation energy was found to be 0.51 eV.