• Korean Chemical Engineering Research
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• v.48 no.2
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• pp.218-223
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• 2010

The zinc oxide thin film, which can be applied as the gas sensor of a semiconductor type, was grown on the silicon substrate by CFR(continuous flow reaction) method in this study. The growth property and the electrical property of the zinc oxide thin films synthesized by CFR method were also investigated. Zinc acetate solutions of 0.005~0.02 M were used as the precursor for the preparation of zinc oxide thin films. The size of ZnO particles consisted on the zinc oxide thin film increased not only with increasing concentration of precursor, but also the thickness of thin film increased. The growth rate of zinc oxide thin film by CFR method was proportionably depend on the concentration of precursor and the uniform ZnO thin film was prepared when zinc acetate of 0.01 M is used as the precursor. The charged currents on the zinc oxide thin films were obtained as its electrical property by I-V meter, and increased agree with increasing the thickness of zinc oxide thin film. Thus, it was concluded that the charged current on the zinc oxide thin film can be controlled with changing concentration of precursor solution in CFR method. The charged currents on the zinc oxide thin films also decreased when ZnO thin film is exposed under hydrogen sulfide of 500 ppmv at $300^{\circ}C$ for 5 min. From these results, it could be confirmed that the zinc oxide thin film prepared by CFR method can be used for the detection of sulfur compounds.

• Journal of Sensor Science and Technology
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• v.6 no.1
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• pp.72-80
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• 1997

One of the concerns in micro fluidic valve designs is that of reverse direction leakage. This paper designs and fabricates a new fluidic valve to achieve zero leakage. The design uses flapper and nozzle elements. In the forward direction the working fluid pushes the flapper upward to allow flow. In the reverse direction, the flapper pushes against the orifice seat, and thus, no flow can be generated, unless the flapper or nozzle element breaks. The nozzle element fabrication involves fabricating an orifice by wet etching of (100) wafer, The flapper element fabrication involves $20{\mu}m$ deep patterning of the negative image of the flapper, followed by wet etching from backside. Flow experiments were conducted with DI water as the working fluid, and the results are compared to analytical predictions. The results show that the developed flapper-nozzle valve achieves a true diodic flow characteristic.

• The Journal of the Institute of Internet, Broadcasting and Communication
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• v.20 no.1
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• pp.199-204
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• 2020

In case of the silicon solar panel being used in Korea, the production specification is designed to give maximum output at the limit of -0.5 to 0.05℃, so the output of 0.45~0.55% decreases when the temperature rises by 1℃. As a result, the photovoltaic power generation is reduced according to the surface temperature rise of the photovoltaic module due to the characteristics of the solar cell. The decrease in output reduces the efficiency of photovoltaic power generation, and if the efficiency decreases, the result is that the profit of electricity sales according to the amount of photovoltaic power generation decreases. Therefore, this paper proposes a method of spraying cooling air to the lower (or surrounding) of the photovoltaic module when it is identified above the set temperature by the temperature detection sensor. In addition, the amount of power generated is increased by utilizing the lost solar energy, and by applying cooling function through cooling air, the power generation can be further increased.

• Journal of Sensor Science and Technology
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• v.9 no.3
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• pp.196-202
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• 2000

In this paper, we proposed the new bridge combination detection method for three dimensional piezoresistive silicon accelerometer, and the accelerometer with SOI structures was fabricated by bulk micromachining technology for using higher temperature than $200^{\circ}C$. The sensitivities of fabricated accelerometer for X, Y and Z-axis acceleration were about 8mV/V G, 8mV/V G and 40mV/V G. The nonlinearity of the output voltage was 1.6%FS and cross-axis sensitivity was within 4.6%. We confirmed that the three bridges detection method is very simple and the output characteristics of this accelerometer were similar to arithmetic circuit method accelerometer. The temperature characteristics of SOI structure accelerometer showed high operating temperature and good stability. And the temperature coefficient of offset voltage and sensitivity were $1033ppm^{\circ}C^{-1}$ and $1145ppm^{\circ}C$ respectively.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.29A no.1
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• pp.33-40
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• 1992

Several etching phenomena were observed and analyzed in diaphragm process performed on 4-inch (100) Si wafers for sensor application. In case of deep etching to above 300$\mu$m depth, the etch-defects appeared at etched surface could be classified into three categories such as hillocks, reaction products, and white residues. It was known that the hillock had a pyramidal shape or trapizoidal hexahedron structure depending on the density and size of the reaction products. The IR spectra showed that the white residue, which was due to the local over-saturation of Si dissolved in solution, was mostly Si-N-O compounds mixed with a small amount of H and C etc. Also, the difference in both the existence of etch-defects and etch rate distribution over a whole wafer was investigated when the etched surfaces were downward, upward horizontally and erective in etching solutions. The obtained data were analyzed through flow pattern in the etching bath. As the results, the downward and erective postures were favorable in the etch rate uniformity and the etch-defect removal, respectively.

• The Journal of the Institute of Internet, Broadcasting and Communication
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• v.10 no.5
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• pp.153-160
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• 2010

We optimized the Si(substrate)/$SiO_2$(cladding)/$Si_3N_4$(antiresonant cladding)/$SiO_2$(core)/air multi-layers rib-optical waveguides of antiresonant reflecting optical waveguide (ARROW) for integrated optical biosensor structure utilizing beam propagation method (BPM). Thickness of anti-resonant cladding was derived to minimize the propagation loss and leaky field mode deeply related with evanescent mode was theoretically derived. Depth, width, refractive index and cladding thickness of anti-resonant cladding were numerically calculated into 2.3${\mu}m$, 5${\mu}m$, 1.488, and 0.11${\mu}m$ respectively to minimize propagation loss using the BPM simulation tool. Finally one- and two-dimensional propagation characteristics of ARROW was confirmed.

• Journal of the Institute of Electronics and Information Engineers
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• v.53 no.12
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• pp.57-63
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• 2016

This paper describes implementation of the RF frequency synthesizer with $0.18{\mu}m$ silicon CMOS technology being used as an application of the IEEE802.15.4g SUN sensor node transceiver modules. Design of the each module like VCO, prescaler, 1/N divider, ${\Delta}-{\Sigma}$ modulator, and common circuits of the PLL has been optimized to obtain high speed and low noise performance. Especially, the VCO has been designed with NP core structure and 13 steps cap-bank to get high speed, low noise, and wide band tuning range. The output frequencies of the implemented synthesizer is 1483MHz~2017MHz, the phase noise of the synthesizer is -98.63dBc/Hz at 100KHz offset and -122.05dBc/Hz at 1MHz offset.

• Journal of IKEEE
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• v.24 no.2
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• pp.409-418
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• 2020

In this paper, an integrated optical, evanescent-wave biosensor utilizing a multimode interferometer based on a Si₃N₄ rib-optical waveguide consisting of the Si/SiO₂/Si₃N₄/SiO₂ stacked structure was described. The theoretical background of the multimode interferometer was reviewed, and the structure and design process were presented through numerical computational analysis. We analyzed how the dimension (length, width) of the multimode interferometer affected the sensor performance. It has been confirmed through computational analysis that the changes in the refractive index of an analyte greatly affect the mode pattern formation position and output optical power of a multimode interferometer, and proved that this principle could be applied to integrated-optic biosensor.

• Journal of Sensor Science and Technology
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• v.13 no.2
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• pp.101-109
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• 2004

This paper presents a novel z-axis accelerometer with perfectly aligned vertical combs fabricated using the extended sacrificial bulk micromachining (extended SBM) process. The z-axis accelerometer is fabricated using only one (111) SOI wafer and two photo masks without wafer bonding or CMP processes as used by other research efforts that involve vertical combs. In our process, there is no misalignment in lateral gap between the upper and lower comb electrodes, because all critical dimensions including lateral gaps are defined using only one mask. The fabricated accelerometer has the structure thickness of $30{\mu}m$, the vertical offset of $12{\mu}m$, and lateral gap between electrodes of $4{\mu}m$. Torsional springs and asymmetric proof mass produce a vertical displacement when an external z-axis acceleration is applied, and capacitance change due to the vertical displacement of the comb is detected by charge-to-voltage converter. The signal-to-noise ratio of the modulated and demodulated output signal is 80 dB and 76.5 dB, respectively. The noise equivalent input acceleration resolution of the modulated and demodulated output signal is calculated to be $500{\mu}g$ and $748{\mu}g$. The scale factor and linearity of the accelerometer are measured to be 1.1 mV/g and 1.18% FSO, respectively.

• Journal of Sensor Science and Technology
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• v.4 no.2
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• pp.58-63
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• 1995

The effects of substrate temperature, RF power, and $NH_{3}/SiH_{4}$ gas flow ratio on the dielectric constant and optical bandgap of amorphous silicon nitride (a-SiNx:H) thin films prepared by PECVD method using RF glow discharge decomposition of $SiH_{4}$ and $NH_{3}$ gas mixtures have been studied. The dielectric constant and optical bandgap of a-SiNx:H thin films were greatly exchanged as by increasing substrate temperature, RF power, and $NH_{3}/SiH_{4}$ gas flow ratio. The dielectric constant of a-SiNx:H films was increased and optical bandgap of a-SiNx:H films was decreased as the substrate temperature was increased. When the substrate temperature, RF power, gas pressure, $NH_{3}/SiH_{4}$ gas flow ratio, and thickness were $250^{\circ}C$, 20 W, 500 mTorr, 10 and $1500\;{\AA}$, respectively, the dielectric constant, breakdown field and optical bandgap of a-SiNx:H film were 4.3, 1 MV/cm, and 2.9 eV, respectively.