• 한국재료학회지
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• 제5권4호
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• pp.397-404
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• 1995

반도체 세정공정에서 염기성 세정액(SCI, Standard cleaning 1, $NH_{4}$OH + $H_{2}$O_{2}$ + $H_{2}$O)은 공정상 발생되는 여러 오염물 중 파티클의 제거를 위해 널리 사용되고 있는데, SCI 조성중 $NH_{4}$OH양에 따라 세정 중 실리콘의 식각속도를 증가시킨다. 이 연구에서는 SCI 세정이 CZ(Czochralski)와 에피 실리콘 기판 표면에 미치는 영향을 단순세정과 연속적인 산화-HF 식각-SCI 세정공정을 통해 관찰되었다. CZ와 에피 기판을 8$0^{\circ}C$의 1 : 2 : 10과 1 : 1 : 5 SCI 용액에서 60분까지 단순 세정을 했을 때 laser particle scanner와 KLA사의 웨이퍼 검색장치로 측정된 결함의 수는 세정시간에 따라 변화를 보이지 않았다. 그러나 CZ와 에피 기판을 10분간 SCI 세정후 90$0^{\circ}C$에서 산화 HF식각공정을 4번까지 반복하였을 때 에피 기판 표면의 결함수는 감소하는 반면에 CZ기판에서는 직선적으로 증가하였다. 반복적인 산화-HF 식각-XCI 세정공정을 통해 생성된 CZ기판 표면의 결함은 크기가 0.7$\mu$m 이하의 pit과 같은 형상을 보여주었다. 이들 결함은 열처리 중 CZ 기판내와 표면에 산화 석출물들이 형성, 반복적인 HF 식각-SCI 세정공정을 통해 다른 부위에 비해 식각이 빨리 일어나 표면에 생성되는 것으로 여기어 진다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 춘계학술대회 논문집 센서 박막재료연구회 및 광주 전남지부
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• pp.75-79
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• 2008

In this paper, we measured the activation energy of the Bisphenol A type Epoxy resin (DGEBA)-Jeffamine system according to an irradiation. We put the mixed solutions to the silicon mold after mixing both DGEBA(216g) and Jeffamine(93.9g), curing agent of amine system. The mixed solutions were cured in the atmosphere during 24hours after finishing the first curing during 4hours in the vacuum oven under $80^{\circ}C$. The mixed solutions were cured in the atmosphere during 24hours after finishing the second curing during 12hours in the vacuum oven under $60^{\circ}C$ again. Prepared samples were irradiated to the dose rate of 8kGy/hr with 500kGy, 700kGy, 1000kGy, 1500kGy, 2000kGy, 2500kGy. Experimental results indicated activation energy of the samples reduced as the irradiation dose increased because of the peroxides of the Epoxy created by the oxidation and the radiation.

• Current Photovoltaic Research
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• 제4권2호
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• pp.31-41
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• 2016

n-type PERT (passivated emitter, rear totally diffused) bifacial solar cells with boron and phosphorus diffusion as p+ emitter and n+ BSF (back surface field) have attracted significant research interest recently. In this work, the influences of wafer thickness, bulk lifetime, emitter, BSF on the photovoltaic characteristics of solar cells are discussed. The performance of the solar cell is determined by using one-dimensional solar cell simulation software PC1D. The simulation results show that the key role of the BSF is to decrease the surface doping concentration reducing the recombination and thus, increasing the cell efficiency. A lightly phosphorus doped BSF (LD BSF) was experimentally optimized to get low surface dopant concentration for n type bifacial solar cells. Pre-oxidation combined with a multi-plateau drive-in, using limited source diffusion was carried out before pre-deposition. It could reduce the surface dopant concentration with minimal impact on the sheet resistance.

• 한국정보통신학회:학술대회논문집
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• 한국해양정보통신학회 2007년도 춘계종합학술대회
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• pp.544-547
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• 2007

본 연구에서는 Shallow trench isolation(STI)를 형성하기 위한 과정을 제시할 것이다. 소자간 분리를 위한 전통적인 방법으로 LOCOS(Local Oxidation of Silicon) 방식이 사용되어왔으나, 소자가 미세해짐에 따라 LOCOS 방식에서 나타나는 단차와 Birds Beak이라는 횡 방향의 산화에 의한 활성 영역의 손실을 무시할 수 없게 되어 새로운 소자 분리 방법이 필요하게 되었으며 이러한 요구에 의해 도입된 Isolation 기술이 Shallow Trench Isolation(STI) 기술이다. 다양한 etching options은 중요한 부분이다. 이 경우에 trench etching의 방향은 점점 좁아지는 측면을 경사지게 하면서 협곡을 만드는 효과적인 방법을 사용할 것이다. 본 연구에서는 좁은 협곡(Shallow trench)의 절반만 시뮬레이션 될 것이다. 만약 모든 협곡의 시뮬레이션을 필요로 한다면 다변의 etching은 사용될 수 있다. STI 공정의 핵심은 trench etch를 좁게하면서 반도체 소자를 어떻게 하면 잘 분리할 수 있는가에 있다.

• 한국전기전자재료학회논문지
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• 제14권1호
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• pp.1-5
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• 2001

STI(shallow trench isolation)-CMP(chemical mechanical polishing) process have been substituted for LOCOS(local oxidation of silicon) process to obtain global planarization in the below sub-0.5㎛ technology. However TI-CMP process, especially TI-CMP with RIE(reactive ion etching) etch back process, has some kinds of defect like nitride residue, torn oxide defect, etc. In this paper, we studied how to reduced torn oxide defects after STI-CMP with RIE etch back processed. Although torn oxide defects which can occur on trench area is not deep and not severe, torn oxide defects on moat area is not deep and not severe, torn oxide defects on moat area is sometimes very deep and makes the yield loss. Thus, we did test on pattern wafers which go through trench process, APECVD process, and RIE etch back process by using an IPEC 472 polisher, IC1000/SUVA4 PAD and KOH base slurry to reduce the number of torn defects and to study what is the origin of torn oxide defects.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1998년도 추계학술대회 논문집 학회본부 C
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• pp.723-725
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• 1998

STI CMP process are substituting gradually for LOCOS(Local Oxidation of Silicon) process to be available below sub-0.5um technology and to get planarized. The other hand, STI CMP process(especially STI CMP with RIE etch back process) has some kinds of defect like Nitride residue, Torn Oxide defect, etc. In this paper, we studied how to reduce Torn Oxide defects after STI CMP with RIE etch back process. Although Torn Oxide defects which occur on Oxide on Trench area is not deep and not sever, Torn oxide defects on Moat area is sometimes very deep and makes the yield loss. We did test on pattern wafers witch go through Trench process, APCVD process, and RIE etch back process by using an REC 472 polisher, IC1000/SUV A4 PAD and KOH base slurry to reduce the number of torn defects and to study what is the root causes of torn oxide defects.

• 제어로봇시스템학회논문지
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• 제13권7호
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• pp.616-623
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• 2007

A dual micro gas sensor array was fabricated using nano sized $SnO_2$ thin films which had good sensitivities to CO and combustible gases, or $H_2S$ gas for air quality sensors in automobile. The already existed air quality sensor detects oxidizing gases and reducing gases, the air quality sensor(AQS), located near the fresh air inlet detected the harmful gases, the fresh air inlet door/ventilation flap was closed to reduce the amount of pollution entering the vehicle cabin through HVAC(heating, ventilating, and air conditioning) system. In this study, to make $SnO_2$ thin film AQS sensor, thin tin metal layer between 1000 and $2000{\AA}$ thick was oxidized between 600 and $800^{\circ}C$ by thermal oxidation. The gas sensing layers such as $SnO_2$, $SnO_2$(pt) and $SnO_2$(+CuO) were patterned by metal shadow mask for simple fabrication process on the silicon substrate. The micro gas sensors with $SnO_2$(+Pt) and $SnO_2$(CuO) showed good selectivity to CO gas among reducing gases and good sensitivity to $H_2S$ that is main component of bad odor, separately.

• Journal of Photoscience
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• 제9권1호
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• pp.17-22
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• 2002

Studies have been conducted to explore photoaddition reactions of N-methylthiophthalimide with $\alpha$-silyl-n-electron donors Et$_2$NCH$_2$SiMe$_3$, n-PrSCH$_2$SiMe$_3$ and EtOCH$_2$SiMe$_3$. Photoaddition of $\alpha$-silyl amine Et$_2$NCH$_2$SiMe$_3$ to N-methylthiophthalimide occurs in $CH_3$CN and benzene to produce non-silicon containing adduct in which thiophthalimide thione carbon is bonded to $\alpha$-carbon of $\alpha$-silyl amine in place of the trimethylsilyl group. In contrast, photoaddition of EtOCH$_2$SiMe$_3$ to N-methylthiophthalimide generates two diastereomeric adducts in which thiophthalimide thione carbon is connected to $\alpha$-carbon of $\alpha$-silyl ether in place of u-hydrogen. Based on a consideration of the oxidation potentials of u-silyl-n-electron donors and the nature of photoadducts, mechanism for these photoadditions involving single electron transfer(SET) -desilylation and H atom abstraction pathways are proposed.

• 한국주조공학회지
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• 제18권4호
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• pp.389-397
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• 1998

회주철 모재의 표면에 감압 플라즈마 용사법으로 실리콘 분말을 피복시킨 후 $CO_2$ 레이저를 이용하는 표면 합금화로 고온 내스케일성이 향상된 표면 개질층을 제조하였다. 실리콘의 표면 합금층에는 응집상의 흑연(chunky graphite)이 $Fe_5Si_3$로 구성된 망상의 화합물 기지속에 정출하는 조직특성을 보였다. 대기 분위기에서 18.0ks동안 열중량측정(TG)한 결과 실리콘 표면 합금층의 무게 증가율은 회주철 모재에 비하여 923K에서는 약 1/3, 1098K에서는 약 1/10을 나타내었다. 그리고 1098K에서 18.0ks동안 유지시킨 주철모재 시편에서 원래의 모재표면을 기준으로 다공성의 외부스케일과 편상흑연을 따라 생성된 내부스케일로 구성된 두께 $60{\sim}70\;{\mu}m$의 두꺼운 산화스케일이 생성되었으나, 실리콘의 표면 합금층에서는 두께 $3{\sim}5\;{\mu}m$의 치밀한 외부 산화스케일만이 생성되었다. 실리콘 합금층의 단면 미소경도값은 MHV $300{\sim}1100$으로 그 변동폭이 심하였으나, 진공분위기에서 열처리(1223K, 18.0ks)한 경우 미소경도값의 편차는 MHV $300{\sim}500$으로 개선되었다.

• E2M - 전기 전자와 첨단 소재
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• 제7권1호
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• pp.25-31
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• 1994

Properties of oxynitride films reoxidized by $N_2{O}$ gas after thermal oxidation and $N_2{O}$ oxide films directly oxidized by using $N_2{O}$ gas on the bare silicon wafer have been studied. From the AES analysis, nitrogen pile-up at the interface of Si/oxynitride and Si/$N_2{O}$ oxide has observed. $N_2{O}$ oxide and oxynitride films have the self-limited characteristics. Therefore, it will be possible to obtain ultra-thin films. Nitrogen pile-up at the interfaces of Si/oxynitride and Si/$N_2{O}$ oxide strengthens film structure and improves dielectric reliability. Although fixed charge densities and interface trap densities of N20 oxide and oxynitride films have somewhat higher than those of thermal $SiO_2{O}$, $N_2{O}$ oxide and oxynitride films showed improved I-V characteristics and constant current stress.