• Journal of the Korea Academia-Industrial cooperation Society
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• v.18 no.5
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• pp.475-480
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• 2017

In this paper, the conductivity of the fine pattern is improved in the insulating substrate by laser-induced forward transfer (LIFT) process. The high laser beam energy generated in conventional laser induced deposition processes induces problems such as low deposition density and oxidation of micro-patterns. These problems were improved by using a polymer coating layer for improved deposition accuracy and conductivity. Chromium and copper were used to deposit micro-patterns on silicon wafers. A multi-pulse laser beam was irradiated on a metal thin film to form a seed layer on an insulating substrate(SiO2) and electroless plating was applied on the seed layer to form a micro-pattern and structure. Irradiating the laser beam with multiple scanning method revealed that the energy of the laser beam improved the deposition density and the surface quality of the deposition layer and that the electric conductivity can be used as the microelectrode pattern. Measuring the resistivity after depositing the microelectrode by using the laser direct drawing method and electroless plating indicated that the resistivity of the microelectrode pattern was $6.4{\Omega}$, the resistance after plating was $2.6{\Omega}$, and the surface texture of the microelectrode pattern was uniformly deposited. Because the surface texture was uniform and densely deposited, the electrical conductivity was improved about three fold.

• Korean Journal of Materials Research
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• v.21 no.1
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• pp.8-14
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• 2011

To improve the chemical stability of metal, the ceramic coatings on metallic materials have attracted interest from many researchers due to the chemical inertness of ceramic materials. To endure strong acids, SiOC coating on metal substrate was carried out by dip coating method using 20wt% polyphenylcarbosilane solution; SiC powder was added to the solution at 10wt% and 15wt% to improve the mechanical properties and to prevent cracks of the film. Thermal oxidation as a curing step was carried out at $200^{\circ}C$ for crosslinking of the polyphenylcarbosilane, and the coating samples were pyrolysized at $800^{\circ}C$ under argon to convert the polyphenylcarbosilane to SiOC film. The thicknesses of the SiOC coating films were $2.36{\mu}m$ and $3.16{\mu}m$. The quantities of each element were measured as $SiO_{1.07}C_{6.33}$ by EPMA, and it can be confirmed that the SiOC film from polyphenylcarbosilane was formed in a manner that was carbon rich. The hardness of the SiOC film was found to be 3.2Gpa through nanoindentor measurement. No defect including cracks appeared in the SiOC film. The weight loss of the SiOC coated stainless steel was within 2% after soaking in 10% HCl solution at $80^{\circ}C$ for one week. From these results, SiOC coating shows good potential for application to protect against severe chemical corrosion of stainless steel.

• Journal of Sensor Science and Technology
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• v.1 no.1
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• pp.23-34
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• 1992

In order to fabricate magnetoresistive sensor, Fe-Ni and Co-Ni alleys were evaporated on the slide glass and the silicon wafers. Saturation magnetic induction($B_{s}$), coercive field strength($H_{c}$) and magnetoresistance were measured for fabricated samples. The evaporated Fe-Ni thin films show that the saturation magnetic induction was 0.65 T, and coercive field strength was 0.379 A/cm, and this value was changed to 0.370 A/cm(//), 0.390 A/cm(${\bot}$), respectively after magnetic annealing. For the measurement of coercive field strength, magnetizing frequency of 1 kHz was used. For the fabricated sensor element, the change of magnetoresistance (${\Delta}R/R$) was excessively unstable due to oxidation in the process of fabrication. The evaporated Co-Ni alloy thin films show that saturation magnetic induction was 0.66 T, and coercive field strengthes were 5.895 A/cm(//), 5.898 A/cm(${\bot}$), respectively, after magnetic annelaing. The change of magnetoresistance(${\Delta}R/R$) was $3.6{\sim}3.7%$ of which value was excessively stable to room temperature. Fe-Ni thin film could have many problems due to large affinity in the process of fabrication of magnetoresistance sensor, but Co-Ni thin film could be a suitable material for fabrication of magnetoresistance sensor, because of its small affinity and definite magnetoresistance effects.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.6 no.1
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• pp.78-82
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• 2005

Display manufacturing process has adopted RCA cleaning, applying to larger area and coping with environmental issue for last ten years. However, the approaching concept of ozonized, hydrogenised, or electrolyzed water cleaning technologies is within RCA clean paradigm. In this work, only electrolyzed anode water was applied to clean particles and organics as well as metals based on Pourbaix concept, and as a test vehicle, MgO particles were introduced to prove the new concept. The electrolyzed anode water is very oxidative with high oxidation reduction potential (ORP) and low in pH of more than 900 mV and 3.1, respectively. MgO particles were immersed in the anode water and its weight losses due to dissolution were measured with time. Weight losses were in the ranges of 100 to 500 micrograms in 250 ml anode water depending on their ORP and pH. Therefore it was concluded that the cleaning radicals in the anode water was at least in the range of 1 to $5{\times}10^{20}$ ea per 250 ml anode water equivalent to $1{\times}10^{18} ea/cm^2$. Hence it can be assumed that the anode water applied to display cleaning from now on $1{\times}10^{10}$ to $1{\times}10^{15} ea/cm^2$ ranges of contaminants are being treated. In addition, it was observed that anode water did not develop micro-roughness on hydrophobic surface while it did on the native silicon oxide.

• Journal of the Korean institute of surface engineering
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• v.29 no.6
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• pp.809-815
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• 1996

$Y_2O_3$-based metal-insulator-semiconductor (MIS) structure on p-Si(100) has been studied. Films were prepared by UHV reactive ionized cluster beam deposition (r-ICBD) system. The base pressure of the system was about $1 \times 10^{-9}$ -9/ Torr and the process pressure $2 \times 10^{-5}$ Torr in oxygen ambience. Glancing X-ray diffraction(GXRD) and in-situ reflection high energy electron diffracton(RHEED) analyses were performed to investigate the crystallinity of the films. The results show phase change from amorphous state to crystalline one with increasingqr acceleration voltage and substrate temperature. It is also found that the phase transformation from $Y_2O_3$(111)//Si(100) to $Y_2O_3$(110)//Si(100) in growing directions takes place between $500^{\circ}C$ and $700^{\circ}C$. Especially as acceleration voltage is increased, preferentially oriented crystallinity was increased. Finally under the condition of above substrate temperature $700^{\circ}C$ and acceleration voltage 5kV, the $Y_2O_3$films are found to be grown epitaxially in direction of $Y_2O_3$(1l0)//Si(100) by observation of transmission electron microscope(TEM). Capacitance-voltage and current-voltage measurements were conducted to characterize Al/$Y_2O_3$/Si MIS structure with varying acceleration voltage and substrate temperature. Deposited $Y_2O_3$ films of thickness of nearly 300$\AA$ show that the breakdown field increases to 7~8MV /cm at the same conditon of epitaxial growing. These results also coincide with XPS spectra which indicate better stoichiometric characteristic in the condition of better crystalline one. After oxidation the breakdown field increases to 13MV /cm because the MIS structure contains interface silicon oxide of about 30$\AA$. In this case the dielectric constant of only $Y_2O_3$ layer is found to be $\in$15.6. These results have demonstrated the potential of using yttrium oxide for future VLSI/ULSI gate insulator applications.

• Journal of Sensor Science and Technology
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• v.8 no.2
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• pp.115-123
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• 1999

A micro-gas sensor with heater and sensing electrode on the same plane was fabricated on phosphosilicate glass(PSG, 800nm)/$Si_3N_4$ (150nm) dielectric membrane. PSG film was provided by atmospheric pressure chemical vapor deposition(APCVD), and $Si_3N_4$ film by low pressure chemical vapor deposition (LPCVD). Total area of the fabricated device was $3.78{\times}3.78mm^2$. The area of diaphragm was $1.5{\times}1.5mm^2$, and that of the sensing layer was $0.24{\times}0.24mm^2$. Finite-element simulation was employed to estimate temperature distribution for a square-shaped diaphragm. The power consumption of Pt heater was about 85mW at $350^{\circ}C$. Tin thin films were deposited on the silicon substrate by thermal evaporation at room temperature and $232^{\circ}C$, and tin oxide films($SnO_2$) were prepared by thermal oxidation of the metallic tin films at $650^{\circ}C$ for 3 hours in oxygen ambient. The film analyses were carried out by SEM and XRD techniques. Effects of humidity and ambient temperature on the resistance of the sensing layer were found to be negligible. The fabricated micro-gas sensor exhibited high sensitivity to butane gas.

• Journal of the Semiconductor & Display Technology
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• v.6 no.3
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• pp.19-23
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• 2007

The NiSi is very promising candidate for the metallization in 45 nm CMOS process such as FUSI(fully silicided) gate and source/drain contact because it exhibits non-size dependent resistance, low silicon consumption and mid-gap workfunction. Ni film was first deposited by using ALD (atomic layer deposition) technique with Bis-Ni precursor and $H_2$ reactant gas at $220^{\circ}C$ with deposition rate of $1.25\;{\AA}/cycle$. The as-deposited Ni film exhibited a sheet resistance of $5\;{\Omega}/{\square}$. RTP (repaid thermal process) was then performed by varying temperature from $400^{\circ}C$ to $900^{\circ}C$ in $N_2$ ambient for the formation of NiSi. The process temperature window for the formation of low-resistance NiSi was estimated from $600^{\circ}C$ to $800^{\circ}C$ and from $700^{\circ}C$ to $800^{\circ}C$ with and without Ti capping layer. The respective sheet resistance of the films was changed to $2.5\;{\Omega}/{\square}$ and $3\;{\Omega}/{\square}$ after silicidation. This is because Ti capping layer increases reaction between Ni and Si and suppresses the oxidation and impurity incorporation into Ni film during silicidation process. The NiSi films were treated by additional thermal stress in a resistively heated furnace for test of thermal stability, showing that the film heat-treated at $800^{\circ}C$ was more stable than that at $700^{\circ}C$ due to better crystallinity.

• Conservation Science in Museum
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• v.6
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• pp.55-66
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• 2005

Three types of epoxy resins (Epo-Tek 301, Araldite 103, and Araldite 106) and three types of pigments (bunche, pastel, and conté), which are materials for porcelain restoration, were selected as examination materials. The tone change, porosity, and sedimental resulting from the mixtures of varying ratios of these three materials were observed. Samples were also made from the mixture of Epo-teck 301, four kinds of white pigments, and six types of fillers and subjected to ultraviolet ray penetration for 200 hours to observe the oxidation of the epoxy resins. The result showed that the chemical composition of pastel drastically changed when mixed with Epo-tek 301. Although bunche and conté displayed clear colors, those of conté were less clear when it was mixed with other substances. Adding a small amount of Epo-tek 301 tended to be driven into the corner, whereas mixing a large amount caused saturation and boiling. On the other hand, AW 106 did not display clear colors owing to its high viscosity; when mixed in large amounts, however, the clarity of colors improved. For AY 103, a similar standard of color clarity was maintained regardless of the mixture ratio. The following was ranked according to the level of porosity: [Pastel>bunche≒conté]. In terms of sedimentary, however, [bunche>conté>Pastel], [Epo-tek 301> AY 103> AW 106]. The result of measuring the degree of yellowing revealed that titanium, pastel, silicon dioxide, and kaolin tended to turn yellow, whereas bunche, conté, diatomaceous earth, and calcium hydroxide tended to resist yellowing.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.100-102
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• 2013

Magnetron-sputtering법을 사용하여 기존에 연구하였던 CrAlN (Cr 7：Al 3)박막에 Si를 첨가하여 Si의 함량 변화에 따라 미세구조와 화학적 결합상태, 온도저항계수(TCR) 및 산화저항의 영향과 기계적특성 개선을 통한 multi-functional heater resistor layer로써의 가능성을 연구하였다. CrAlSiN 박막의 Si 함량에 변화에 따라 온도저항계수 변화를 확인하였으며 X-선 회절 분석(XRD) 패턴 분석결과 CrAlSiN 박막의 결정구조가 Bl-NaCl 구조를 가지고 있는 것을 확인하였으며 SEM과 AFM을 통한 표면 및 미세구조 분석결과 Si의 함량이 증가할수록 입자가 조밀해짐을 알 수 있었다. 최근 digital priting technology의 핵심 기술로 부각되고 있는 inkjet priting technology는 널리 태양전지뿐만 아니라 thin film process, lithography와 같은 반도체 공정 기술에 활용 할 수 있기 때문에 반도체 제조장비에도 사용되고 있으며, 현재 thermal inkjet 방식을 사용하고 있다. Inkjet printing technology는 전기 에너지를 잉크를 배출하기 위해 열에너지로 변환하는 thermal inkjet 방식을 사용하고 있는데, 이러한 thermal inkjet 방식은 기본적으로 전기저항이 필요하지만 electrical resistor layer는 잉크를 높은 온도에서 순간적으로 가열하기 때문에 부식이나 산화 등의 문제가 발생할 수 있어 이에 대한 보호층을 필요로 한다. 하지만, 고해상도, 고속 잉크젯 프린터, 대형 인쇄 등을 요구되고 있어 저 전력 중심의 잉크젯 프린터의 열효율을 방해하는 보호층 제거에 필요성이 제기되고 있다. 본 연구는 magnetron-sputtering을 사용하여 기존의 CrAlN 박막에 Si를 합성하여 anti-oxidation, corrosion resistance 그리고 low temperature coefficient of resistance 값을 갖는 multi-functional heater resistor layer로써 CrAlSiN 박막의 Si 함량에 따른 효과에 초점을 두었다. 본 실험은 CrAlN 박막에 Si 함량을 4~11 at%까지 첨가시켜 함량의 변화에 따른 특성변화를 확인하였다. 함량이 증가할수록 amorphous silicon nitride phase의 영향으로 박막의 roughness는 감소하였으며 XRD 분석결과 (111) peak의 Intensity가 감소함을 확인하였으며 SEM 관찰시 모든 박막이 columnar structure를 나타내었으며 Si함량이 증가할수록 입자가 치밀해짐을 보여주었다.Si함량이 증가할수록 CrAlN 박막에 비하여 면저항은 증가하였으며 TCR 측정결과 Si함량이 6.5 at%일 때 가장 안정한 TCR값을 나타내었다. Multi-functional heater resistor layer 역할을 하기 위해서, CrAlSiN 박막의 원소 분포, 표면 거칠기, 미세조직, 전기적 특성 등을 조사하였다. CrAlN 박막의 Si의 첨가는 크게 XRD 분석결과 주상 성장을 억제 할 수 있으며 SEM 분석을 통하여 Si 함량이 증가할수록 Si3N4 형성이 감소하며 입자크기가 작아짐을 확인하였다. 면저항의 경우 Si 함량이 증가함에 따라 높은 면저항을 나타내었으며 Si함량이 6.5 at%일 때 가장 낮은 TCR 값인 3120.53 ppm/K값을 보였다. 이 값은 상용되고 있는 heater resistor보다 높지만, CrAlSiN 박막이 더 우수한 기계적 특성을 가지고 있기 때문에 hybrid heater resistor로 적용할 수 있을 것으로 기대된다.

• Journal of Korean Biological Nursing Science
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• v.3 no.1
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• pp.41-52
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• 2001

This study was undertaken to investigate the effects of n-6(corn oil) & n-3(fish oil) fatty acids on infarction size and the cerebral activities of antioxidant enzyme in rat focal brain ischemia model. Weaning Sprague-Dawley rats were fed with either corn oil supplemented diet(COD, 14% corn oil) or fish oil supplemented diet(FOD, 14% menhaden oil) for 6 weeks. The right middle cerebral artery was occluded for 2 hours with a silicon rubber coated nylon surgical thread. After 24 hours of recirculation, the rats were sacrificed and brain sections were photographed using CCD camera after staining with 2, 3, 5-triphenyltetrazolium chloride for 60 minutes in room temperature. The infarcted area was measured and the volume of infarction was calculated. Catalase(CAT), superoxide dismutase(SOD) activities, and fatty acid composition in the brain were also measured. The total and corrected infarction volumes were not significantly different between FOD and COD group. The docosagexaenoic acid(DHA) and DHA content/arachidonic acid(AA) ratio of the cerebral cortex, an index of defense against lipid oxidation, were significantly increased in FOD group compared to those of COD group(p<0.05). In the left cortex(non-infarction side) as well as the right cortex(infarction side) of FOD group, CAT and Cu/Zn SOD activities were higher than those of the COD group(p<0.05). However, CAT and Cu/Zn SOD activities were not significantly different between the left cortex(non-infarction side) and the right cortex(infarction side) of both FOD and COD group. GPx activities were also not significantly different between two groups. Our results demonstrate that the brain infarction size in FOD and COD were not significantly different. However, cerebral lipid composition and antioxidant enzyme activities in FOD and COD group were different. Fish oil, a source of n-3 polyunsaturated fatty acid(PUFA) and corn oil, that of n-6(PUFA) may have a protective effect against oxidative stress induced via different mechanisms.