• 제목/요약/키워드: silicon content

검색결과 360건 처리시간 0.021초

Electrical Properties of Tungsten Oxide Interfacial Layer for Silicon Solar Cells

  • Oh, Gyujin;Kim, Eun Kyu
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2015년도 제49회 하계 정기학술대회 초록집
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    • pp.196.2-196.2
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    • 2015
  • There are various issues fabricating the successful and efficient solar cell structures. One of the most important issues is band alignment technique. The solar cells make the carrier in their active region over the p-n junction. Then, electrons and holes diffuse by minority carrier diffusion length. After they reach the edge of solar cells, there exist large energy barrier unless the good electrode are chosen. Many various conductor with different work functions can be selected to solve this energy barrier problem to efficiently extract carriers. Tungsten oxide has large band gap known as approximately 3.4 eV, and usually this material shows n-type property with reported work function of 6.65 eV. They are extremely high work function and trap level by oxygen vacancy cause them to become the hole extraction layer for optical devices like solar cells. In this study, we deposited tungsten oxide thin films by sputtering technique with various sputtering conditions. Their electrical contact properties were characterized with transmission line model pattern. The structure of tungsten oxide thin films were measured by x-ray diffraction. With x-ray photoelectron spectroscopy, the content of oxygen was investigated, and their defect states were examined by spectroscopic ellipsometry, UV-Vis spectrophotometer, and photoluminescence measurements.

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폴리우레탄 코팅제에 있어서 Hard Segment와 Soft Segment의 조성 및 함량변화가 내마모성에 미치는 영향 (The Influence of Soft/Hard Segment Composition and Content on the Abrasion Resistance of Polyurethane Coating Agents)

  • 손형석;전동근;박성진;김용성;권귀택;김기수
    • 한국자동차공학회논문집
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    • 제22권5호
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    • pp.5-12
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    • 2014
  • Weatherstrip coatings of urethane and silicon type which are fit to EPDM and thermoplastic materials are used in sealing systems for automotive applications for noise reduction and high slip characteristics for external applications, respectively. Polyurethane binder was successfully synthesized from poly(butyladiphate)diol (PBAD), poly(tetramethylene)glycol (PTMG) and isocyanate as starting materials. Then, polyurethane coating agents were prepared by using various additives. To investigate effects of segment types on the abrasion resistance of polyurethane coating agents, thin films based on polyurethane coating materials were fabricated. With increasing the amount of hard segment in the coating agent, abrasion resistance, modulus and tensile strength of the coating films were improved, but the elongation of the coating films was decreased.

로터리 댐퍼의 토오크 특성에 관한 연구 (A Study on the Torque Characteristics of Rotary Dampers)

  • 이춘태
    • 드라이브 ㆍ 컨트롤
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    • 제16권4호
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    • pp.87-92
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    • 2019
  • Rotary dampers are damping devices which provide high resistance to shaft rotation. Rotary dampers are being used in various areas to enable the gentle opening and closing of the rotation motion relative to home furniture, industry machinery and automotive parts. Rotary dampers can be installed directly at the rotating point of a various part and can achieve uniform, gentle movement which increases quality and value of products. And generally, the silicone fluid is used as the damping medium because of its stable viscous properties. The movement of these little decelerators can be achieved with a high viscosity of working fluid and throttles installed in the body of the rotary damper. The damping force can be achieved clockwise, anti-clockwise or in both directions according to the structure of the orifices or throttles. In this paper, the torque performances of the rotary damper containing air in the working fluid were studied. For this purpose, the torque characteristic of the rotary damper according to the variation of various operating conditions such as clearance of leakage, dimensions of groove orifice, content ratio of air, etc., were simulated with AMEsim software.

고온가압소결한 SiC-TiC 복합체의 기계적, 전기적 특성 (Mechanical and Electrical Properties of Hot-Pressed Silicon Carbide-Titanium Carbide Composites)

  • 박용갑
    • 한국세라믹학회지
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    • 제32권10호
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    • pp.1194-1202
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    • 1995
  • The influences of TiC additions to the α-SiC on microstructural, mechanical, and electrical properties were investigated. Electrical discharge machinability of SiC-TiC composites was also studied. Samples were prepared by adding 30, 45, 60 wt.% TiC particles as a second phase to a SiC matrix. Sintering of SiC-TiC composites was done by hot pressing under a vacuum atmospehre from 1000 to 2000℃ with a pressure of 32 MPa and held for 90 minutes at 2000℃. Samples obtained by hot pressing were fully dense with the relative densities over 99% except 60wt.% TiC samples. Flexural strength and fracture toughness of the samples were increased with the TiC content. In case of SiC samples containing 45 wt.% TiC, the fracture toughness showed 90% increase compared to that of monolithic SiC sample. The crack propagation and crack deflection were observed with a SEM for etched samples after Vicker's indentation. The electrical resistivities of SiC-TiC composites were measured utilizing the four-point probe. The electrical dischage machining of composites was also conducted to evaluate the machinability.

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N$_2$ Plasma Treatment Effects of Silicon Nitride Insulator Layer for Thin Film Transistor Applications

  • Ko, Jae-Kyung;Park, Yong-Seob;Park, Joong-Hyun;Kim, Do-Young;Yi, Jun-Sin;Chakrabarty, K.
    • 한국정보디스플레이학회:학술대회논문집
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    • 한국정보디스플레이학회 2002년도 International Meeting on Information Display
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    • pp.563-566
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    • 2002
  • We investigated to decrease the leakage current of SiNx film by employing $N_2$ plasma treatment. The insulator layers were prepared by two step process; the $N_2$ plasma treatment and then PECVD SiNx deposition with $SiH_4$, $N_2$ gases. To prove the influence of the $N_2$ plasma treatment, the Si substrate was exposed to the plasma, which was generated in Ne gas ambient. Without plasma treatment SiNx film grow at the rate of 7. 03 nm/min, has a refractive index n = 1.77 and hydrogen content of $2.16{\times}10^{22}cm^{-3}$ for $N_2/SiH_4$ gas flow ratio of 20. The obtained films were analyzed in terms of deposition rates, refractive index, hydrogen concentration, and electrical properties. By employing $N_2$ plasma treatment, interface traps such as mobile charges and injected charges were removed, hysteresis of capacitance-voltage (C-V) disappeared. We observed plasma treated sample were decreased the leakage current density reduces by 2 orders with respect to the sample having no plasma treatment.

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Recent Trend of Low Temperature Poly Silicon Technologies in TFT-LCD

  • Kim, C.W.;Kim, H.J.;Lee, H.G.;Min, H.G.;Hwang, J.W.;Cho, S.W.;Ryu, C.K.;Lee, C.;Kang, M.K.;Chung, K.H.
    • 한국정보디스플레이학회:학술대회논문집
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    • 한국정보디스플레이학회 2002년도 International Meeting on Information Display
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    • pp.46-49
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    • 2002
  • Recent trends of low-temperature polycrystalline Si (LTPS) TFT technologies are presented. Characteristics of LTPS TFT processes are compared with those of a-Si TFT's. In order to compete with well-established a-Si TFT-LCD technology, LTPS process has to be as simple as possible. One of the most critical processes, recrystallization of a-Si thin films, could be the process for the differentiation of LTPS technology. Along with these technical reviews, a recent development of the 5.0-inch LTPS TFT-LCD is presented. In order to achieve high-performance display characteristics and save the power consumption, the transflective mode is adopted. The 5.0-inch display with 186 pixel-per-inch, high-resolution LCD was measured to be 10% for the reflectance and 70:1 for the contrast ratio. This display is designed for a high information content hand-held PC (HHPC) application.

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반응성 스퍼터링법으로 증착된 CoNx 중간층을 이용한 (100)Si 기판 위에서의 에피택셜 CoSi2 성장 연구 (Epitaxial Growth of CoSi2 Layer on (100)Si Substrate using CoNx Interlayer deposited by Reactive Sputtering)

  • 이승렬;김선일;안병태
    • 한국재료학회지
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    • 제16권1호
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    • pp.30-36
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    • 2006
  • A novel method was proposed to grow an epitaxial $CoSi_2$ on (100)Si substrate. A $CoN_x$ interlayer was deposited by reactive sputtering of Co in an Ar+$N_2$ flow. From the Ti/Co/$CoN_x$/Si structure, a uniform and thin $CoSi_2$ layer was epitaxially grown on (100)Si by annealing above $700^{\circ}C$. Two amorphous layers were found at the $CoN_x$/Si interface, where the top layer has a silicon nitride (Si-N) bonding state with some Co content and the bottom layer has a Co-Si intermixing state. The SiNx amorphous layer seems to play a critical role of suppressing the diffusion of Co into Si substrate for the direct formation of epitaxial $CoSi_2$.

차량구조용 변태유기소성(TRIP)형 복합조직강의 인장성질에 미치는 화학조성의 영향 (Effect of Chemical Composition on Tensile Property in TRIP-assisted Multiphase Steel for Automobile Structure)

  • 이기열;방일환;마아람;김영순
    • 한국자동차공학회논문집
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    • 제15권3호
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    • pp.106-113
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    • 2007
  • The effect of chemical composition on the microstructural change and tensile property in TRIP-assisted steels with different chemical composition was investigated by using SEM, TEM, XRD and UTM. As a result of microscopic observation, the morphology of retained austenite could be identified as two types : a granular type in a steel containing higher sillicon and a film type in a steel having higher carbon. For the case of higher carbon-containing steel with a tensile strength of 860 MPa and a total elongation of 38%, film-typed retained austenite could be observed between lath bainitic ferrite. Actually, metastable retained austenite was a requisite for the good formability, which means that chemical composition plays a significant role in the microstructure and tensile property of TRIP-assisted steels. With respect to tensile property, the steels containing suitable silicon and manganese, respectively, showed a typical TRIP effect in stress-strain curve, while a steel containing higher manganese content exhibited the assimilar behavior shown in dual phase steel.

나노 탄화규소(SiC) 슬러리로 코팅된 메타-아라미드 직물의 특성 (Characteristics of Meta-aramid Fabrics Coated with Slurry of Nanoscale SiC Particles)

  • 박종현;이선영;원종성;이응보;김의화;이승구
    • 한국염색가공학회지
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    • 제29권3호
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    • pp.131-138
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    • 2017
  • Most of high performance fabrics for the car racing protective clothing have been developed to have thermal resistance, flame retardant property, impact resistance and anti-frictional properties to protect the racer from the crucial accident. In this study, the meta-aramid fabric, which has inherent flame retardant, was coated with nanoparticles of SiC to enhance the impact resistance and anti-friction properties. Uniform coating of the nanoparticles onto the fabrics was obtained by using tape casting method. As the experimental parameters, size and content of the SiC nanoparticle were varied with the coating conditions of the fabric surface. The effects of the nanoparticle coating on the properties of meta-aramid fabric were examined with various instrumental analyses such as SEM, tensile strength and abrasion test.

Si 첨가가 TiAl 합금의 내산화성에 미치는 영향 (Effect of Si on the High Temperature Oxidation of TiAl Alloys)

  • 김성훈;김승언;최송천;이동복
    • 한국표면공학회지
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    • 제33권1호
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    • pp.3-9
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    • 2000
  • Arc-melted alloys of TiAl-(o.25, 0.5, 1.0at%) Si were isothermally oxidized at 800, 900 and $1000^{\circ}C$ in air for 60hr. It was found that the oxidation resistance of the prepared TiAl-Si alloys was much better than that of pure TiAl, being progressively increasing with an increase in the Si content. This was attributed to the formation of $SiO_2$in addition to ($TiO_2$+$Al_2$$O_3$) oxides which formed in TiAl alloys with and without silicon additions. However, the silica formation within the oxide layer unfortunately accelerated the oxide scale spallations. During oxidation, all the elements in the base alloy diffused outward, whereas oxygen from the atmosphere diffused inward. The oxides were primarily composed of an outer thick $TiO_2$layer, an intermediate diffuse $Al_2$$O_3$layer and an inner $TiO_2$layer. A small amount of $SiO_2$was present all over the oxide scale and some voids were found around the intermediate layer.

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