• Title/Summary/Keyword: silicon carbide (SiC)

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Thermal Conducting Behavior of Composites of Conjugated Short Fibrous-SiC Web with Different Filler Fraction (짧은 섬유상간의 접합을 가진 Silicon Carbide Web 복합재료의 분율별 열전도 거동)

  • Kim, Tae-Eon;Bae, Jin Chul;Cho, Kwang Yeon;Lee, Dong Jin;Shul, Yong-Gun
    • Journal of the Korean Ceramic Society
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    • v.49 no.6
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    • pp.549-555
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    • 2012
  • Silicon carbide(SiC) exhibits many unique properties, such as high strength, corrosion resistance, and high temperature stability. In this study, a SiC-fiber web was prepared from polycarbosilane(PCS) solution by employing the electrospinning process. Then, the SiC-fiber web was pyrolyzed at $1800^{\circ}C$ in argon atmosphere after it was subjected to a thermal curing. The SiC-fiber web (ground web)/phenolic resin (resol) composite was fabricated by hot pressing after mixing the SiC-fiber web and the phenolic resin. The SiC-fiber web composition was controlled by changing the fraction of filler (filler/binder = 9:1, 8:2, 7:3, 6:4, 5:5). Thermal conductivity measurement indicates that at the filler content of 60%, the thermal conductivity was highest, at 6.6 W/mK, due to the resulting structure formed by the filler and binder being closed-packed. Finally, the microstructure of the composites of SiC-fiber web/resin was investigated by FE-SEM, EDS, and XRD.

Characterization of Microstructure on Porous Silicon Carbide Prepared by Polymer Replica Template Method (고분자 복제 템플릿 방법을 이용하여 제조된 다공성 탄화규소의 미세구조 특성)

  • Lee, Yoon Joo;Kim, Soo Ryong;Kim, Young Hee;Shin, Dong Geun;Won, Ji Yeon;Kwon, Woo Teck
    • Journal of the Korean Ceramic Society
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    • v.51 no.6
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    • pp.539-543
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    • 2014
  • Foam type porous silicon carbide ceramics were fabricated by a polymer replica method using polyurethane foam, carbon black, phenol resin, and silicon powder as raw materials. The influence of the C/Si mole ratio of the ceramic slurry and heat treatment temperature on the porous silicon carbide microstructure was investigated. To characterize the microstructure of porous silicon carbide ceramics, BET, bulk density, X-ray Powder Diffraction (XRD), and Scanning Electron Microscope (SEM) analyses were employed. The results revealed that the surface area of the porous silicon carbide ceramics decreases with increased heat treatment temperature and carbon content at the $2^{nd}$ heat treatment stage. The addition of carbon to the ceramic slurry, which was composed of phenol resin and silicon powder, enhanced the direct carbonization reaction of silicon. This is ascribed to a consequent decrease of the wetting angles of carbon to silicon with increasing heat treatment temperature.

Microwave-Assisted Heating of Electrospun SiC Fiber Mats

  • Khishigbayar, Khos-Erdene;Joo, Young Jun;Cho, Kwang Youn
    • Journal of the Korean Ceramic Society
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    • v.54 no.6
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    • pp.499-505
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    • 2017
  • Flexible silicon carbide fibrous mats were fabricated by a combination of electrospinning and a polymer-derived ceramics route. Polycarbosilane was used as a solute with various solvent mixtures, such as toluene and dimethylformamide. The electrospun PCS fibrous mats were cured under a halogen vapor atmosphere and heat treated at $1300^{\circ}C$. The structure, fiber morphology, thermal behavior, and crystallization of the fabricated SiC fibrous mats were analyzed via scanning electron microscopy (SEM), X-ray diffraction (XRD), and thermal imaging. The prepared SiC fibrous mats were composed of randomly distributed fibers approximately $3{\mu}m$ in diameter. The heat radiation of the SiC fiber mats reached $1600^{\circ}C$ under microwave radiation at a frequency of 2.45 GHz.

Preparation and Properties of Reaction Bonded Silicon Carbide by Slip Casting Method (탄화규소 분말의 주입성형 및 소결체의 특성)

  • 한인섭;양준환
    • Journal of the Korean Ceramic Society
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    • v.28 no.8
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    • pp.577-584
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    • 1991
  • Among various forming techniques for ceramics, we have studied the slip casting method for the binary system of SiC and carbon. The stability of the slip of silicon carbide and carbon were investigated by measurements of zeta potential, viscosity, sedimentation height, and also studied as functions of PH and amounts of dispersants. A preform of SiC and C was prepared by slip casting and heat treatment at 400∼600$^{\circ}C$ under N2 gas. The preform was reacted with Si metal at 1550$^{\circ}C$, 10-1 mmHg to give rise a reaction bonded SiC with a density of 3.0g/㎤ and a bending strength of 580 MPa.

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Status of Silicon Carbide as a Semiconductor Device (SiCqksehcp 기술현황과 전망)

  • 김은동
    • Electrical & Electronic Materials
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    • v.14 no.12
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    • pp.11-14
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    • 2001
  • 반도체 동작시에 파워 손실을 최소화하는 것은 2000년대의 에너지, 산업전자, 정보통신 산업분야에서의 가장 주요한 요구 사항중의 하나이다. 실리콘계 반도체 소자들은 완전히 새로운 구동기구의 소자가 개발되지 않는 한, 실리콘 재료의 낮은 열전도율이나 낮은 절연파괴전계와 같은 물리적 특성한계 때문에 이러한 요구를 만족시키는 것이 불가능한 실정이다. 따라서 21세기를 위한 대안으로 고열전도율의 WBG(Wide Band-Gap) 물질 그 중에서도 탄화규소(SiC) 반도체가 제시되고 있다. SiC 반도체는 실리콘에 비하여 밴드 갭(band gap: E$_{g}$)이 높을 뿐만이 아니라 절연파괴강도(E$_{B}$)가 한 자릿수 이상 그리고 전자의 포화 drift 속도, V$_{s}$ 및 열전도도 k가 3배 가량 크다. 따라서 SiC는 고온 동작 내지는 고내압, 대전류, 저손실 반도체를 제작하는데 아주 유리하다. 본고에서는 응용성이 넓고, 단결정 제조가 비교적 용이한 SiC 반도체의 기술현황에 대하여 살펴보고자 한다.

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INTERNATIONAL COLLABORATION FOR SILICON CARBIDE MIRROR POLISHING AND DEVELOPMENT

  • HAN, JEONG-YEOL;CHO, MYUNG;POCZULP, GARY;NAH, JAKYUNG;SEO, HYUN-JOO;KIM, KYUNG-HWAN;TAHK, KYUNG-MO;KIM, DONG-KYUN;KIM, JINHO;SEO, MINHO;LEE, JONGGUN;HAN, SUNG-YEOP
    • Publications of The Korean Astronomical Society
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    • v.30 no.2
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    • pp.687-690
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    • 2015
  • For research and development of Silicon Carbide (SiC) mirrors, the Korea Astronomy and Space Science Institute (KASI) and National Optical Astronomy Observatory (NOAO) have agreed to cooperate and share on polishing and measuring facilities, experience and human resources for two years (2014-2015). The main goals of the SiC mirror polishing are to achieve optical surface figures of less than 20 nm rms and optical surface roughness of less than 2 nm rms. In addition, Green Optics Co., Ltd (GO) has been interested in the SiC polishing and joined the partnership with KASI. KASI will be involved in the development of the SiC polishing and the optical surface measurement using three different kinds of SiC materials and manufacturing processes (POCO$^{TM}$, CoorsTek$^{TM}$ and SSG$^{TM}$ corporations) provided by NOAO. GO will polish the SiC substrate within requirements. Additionally, the requirements of the optical surface imperfections are given as: less than 40 um scratch and 500 um dig. In this paper, we introduce the international collaboration and interim results for SiC mirror polishing and development.

A Study on the Surface Modification of Graphite by CVD SiC -Growth Characteristics of SiC in a Horizontal CVD Reactor- (화학증착 탄화규소에 의한 흑연의 표면개질 연구 -수평형 화학증착반응관에서 탄화규소 성장특성-)

  • 김동주;최두진;김영욱;박상환
    • Journal of the Korean Ceramic Society
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    • v.32 no.4
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    • pp.419-428
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    • 1995
  • Polycrystalline silicon carbide (SiC) thick films were depostied by low pressure chemical vapor deposition (LPCVD) using CH3SiCl3 (MTS) and H2 gaseous mixture onto isotropic graphite substrate. Effects of deposition variables on the SiC film were investigated. Deposition rate had been found to be surface-reaction controlled below reactor temperature of 120$0^{\circ}C$ and mass-transport controlled over 125$0^{\circ}C$. Apparent activation energy value decreased below 120$0^{\circ}C$ and deposition rate decreased above 125$0^{\circ}C$ by depletion effect of the reactant gas in the direction of flow in a horizontal hot wall reactor. Microstructure of the as-deposited SiC films was strongly influenced by deposition temperature and position. Microstructural change occurred greater in the mass transport controlled region than surface reaction controlled region. The as-deposited SiC layers in this experiment showed stoichiometric composition and there were no polytype except for $\beta$-SiC. The preferred orientation plane of the polycrystalline SiC layers was (220) plane at a high reactant gas concentration in the mass transfer controlled region. As depletion effect of reactant concentration was increased, SiC films preferentially grow as (111) plane.

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The Enhancement of Corrosion Resistance for WC-Co by Ion Beam Mixed Silicon Carbide Coating

  • Yeo, Sun-Mok;Kim, Dong-Jin;Park, Jae-Won
    • Proceedings of the Korean Vacuum Society Conference
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    • 2010.08a
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    • pp.101-101
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    • 2010
  • A strong adhesion of a silicon carbide (SiC) coating on a WC-Co substrate was achieved through an ion beam mixing technique and the corrosion resistance of the SiC coated WC-Co was investigated by means of a potentiodynamic electrochemical test. In the case of 1 M NaOH solution, a corrosion current density for a SiC coated WC-Co with a heat treatment at $500^{\circ}C$ displays about 50 times lower than that for the as-received WC-Co. However, in the case of 0.5 M H2SO4 solution, a corrosion current density for a SiC coated WC-Co displays about 3 times lower than that for as-received WC-Co. We discussed the physical reasons for the changes of the corrosion current densities at the different electrolytes.

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A Study on the Possibility of Using Fire-Retardant Working Cloth Made from Silicon Carbide (SiC) Composite Spun Yarns (Silicon Carbide (SiC) 복합방적사로부터 제조된 원단의 방화복 활용 가능성에 관한 연구)

  • Kang, Hyun-Ju;Kang, Gun-Woong;Kwon, Oh-Hoon;Kwon, Hyeon-Myoung;Hwang, Ye-Eun;Jeon, Hye-Ji;Joo, Jong-Hyun;Park, Yong-Wan
    • Science of Emotion and Sensibility
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    • v.24 no.4
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    • pp.149-156
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    • 2021
  • The mechanical properties of a woven fabric made of SiC (silicon carbide) fibers were determined in this study using the KES-FB system. The woven fabric is used in high heat settings above 1500℃. Composite spun yarns were used to create SiC fibers. By analyzing the wearing properties, we studied the prospect of using the textiles as fire-retardant work clothes. Mechanical properties determine the wearing attributes. Therefore, the tensile linearity (LT), tensile resilience (RT), and shear stiffness (G) values of the fabric varied according to the yarn type (filament or spun yarn). The thickness, weight per square meter, and density of the fabric were found to have an effect on the shear hysteresis (2HG) and compression resilience (RC) values. In terms of wearable clothing qualities, the fabric qualities of the SiC composite yarn demonstrated the highest ratio of compressive energy to thickness (WC/T), which indicates bulkiness. The fabric manufactured from SiC composite yarns passed the KFI criteria for carbonation length and cumulative flame time in the flame-retardant test. Therefore, we discovered that the material can be used as a fire-resistant work cloth.

Effect of $\alpha$-Silicon Carbide Particle Size in Reaction Bonded Silicon Carbide ($\alpha$-SiC의 입도가 반응소결 탄화규소 소결체에 미치는 영향)

  • 한인섭;양준환;정헌생
    • Journal of the Korean Ceramic Society
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    • v.26 no.4
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    • pp.583-587
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    • 1989
  • Various $\alpha$-silicon carbied and colloidal graphite particles were sintered at 155$0^{\circ}C$ in vacuum atmosphere by reaction bonding sintering method, and the physical properties and microstructural analysis of specimen were investigated. With decreasing particle size, sintered density and 3-point bending strength of materials were increased and 3.2${\mu}{\textrm}{m}$ specimen showed high density and strength, 3.05g/㎤, 40kg/$\textrm{mm}^2$, respectively. The results of X-ray diffractometer and optical micrographs analysis showed that graphite and silicon melt reacted to convert to fine $\beta$-SiC particle and the body was changed to dense material.

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