• 한국세라믹학회지
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• 제44권12호
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• pp.747-750
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• 2007

The thermal conductivities of nano-sized fumed silica-based insulation media were investigated by varying a mean particle size of the silicon carbide opacifiers and ceramic fiber content. Opacifying effect of ceramic fiber and silicon carbide powders was discussed in terms of their content and the mean particle size of them. As the fiber contents increased from 10 wt% to 30 wt% in a material, its thermal conductivity at temperatures of about $620^{\circ}C$ decreased from 0.171 $Wm^{-1}K^{-1}$ to 0.121 $Wm^{-1}K^{-1}$. Meanwhile, the thermal conductivity at temperatures of about $625^{\circ}C$ decreased from 0.128 $Wm^{-1}K^{-1}$ to 0.092 $Wm^{-l}K^{-1}$ as the mean SiC particle size decreased from $31{\mu}m$ to $10{\mu}m$.

• Tribology and Lubricants
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• 제39권2호
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• pp.72-75
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• 2023

Silicon carbide (SiC) is used as a substrate material for power semiconductors; however, SiC chemical mechanical polishing (CMP) requires considerable time owing to its chemical stability and high hardness. Therefore, researchers are attempting to increase the material removal rate (MRR) of SiC CMP using various methods. Mixed-abrasive CMP (MAS CMP) is one method of increasing the material removal efficiency of CMP by mixing two or more particles. The aim of this research is to study the mathematical modeling of the MRR of MAS CMP of SiC with SiO₂ and TiO₂ particles. With a total particle concentration of 32 wt, using 80-nm SiO₂ particles and 25-nm TiO₂ particles maximizes the MRR at 8 wt of the TiO₂ particle concentration. In the case of 5 nm TiO₂ particles, the MRR tends to increase with an increase in TiO₂ concentration. In the case of particle size 10-25 nm TiO₂, as the particle concentration increases, the MRR increases to a certain level and then decreases again. TiO₂ particles of 25 nm or more continuously decreased MRR as the particle concentration increased. In the model proposed in this study, the MRR of MAS CMP of SiC increases linearly with changes in pressure and relative speed, which shows the same result as the Preston's equation. These results can contribute to the future design of MAS; however, the model needs to be verified and improved in future experiments.

• 한국세라믹학회지
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• 제49권4호
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• pp.328-332
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• 2012

Etch rates of Si and high purity SiC have been compared for various fluorocarbon plasmas. The relative plasma resistance of SiC, which is defined as the etch rate ratio of Si to SiC, varied between 1.4 and 4.1, showing generally higher plasma resistance of SiC. High resolution X-ray photoelectron analysis revealed that etched SiC has a surface carbon content higher than that of etched Si, resulting in a thicker fluorocarbon polymer layer on the SiC surface. The plasma resistance of SiC was correlated with this thick fluorocarbon polymer layer, which reduced the reaction probability of fluorine-containing species in the plasma with silicon from the SiC substrate. The remnant carbon after the removal of Si as volatile etch products augments the surface carbon, and seems to be the origin of the higher plasma resistance of SiC.

• The Korean Journal of Ceramics
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• 제2권1호
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• pp.39-42
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• 1996

${\alpha}-SiC$ powder with or without the addition of 0.1 wt% of large ${\alpha}-SiC$ partices(seeds) was pressureless-sintered at $1950^{\circ}C$ for 0.5, 2, and 4 h using $Y_3Al_5 O_{12}$ (yttrium aluminum garnet, YAG) as a sintering aid. The materials without seeds had an equiaxed grain struture. In contrast, the materials with seeds sintered for 2 and 4 h had a duplex microstructure with large elongated grains and amall equiaxed grains. Addition of large ${\alpha}-SiC$ seeds into ${\alpha}-SiC$ accelerated the grain growth of some ${\alpha}-SiC$ grains during sintering and resulted in the increased fracture toughness of the sintered materials. The fracture toughnesses of materials with or without seeds sintered for 4 h were 6.6 and $5.2 MPa \;m^{12}$, respectively.

• 한국세라믹학회지
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• 제42권1호
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• pp.16-21
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• 2005

The effect of additive composition, using AlN and $Er_{2}O_{3}$ as sintering additives, on the mechanical properties of liquid-phase-sintered, and subsequently annealed SiC ceramics was investigated. The microstructures developed were quantitatively analyzed by image analysis. The average thickness of SiC grains increased with increasing the $Er_{2}O_{3}/(AlN + Er_{2}O_{3})$ ratio in the additives whereas the aspect ratio decreased with increasing the ratio. The mechanical properties versus $Er_{2}O_{3}/(AlN + Er_{2}O_{3})$ ratio curve had a maximum; i.e., there was a small composition range at which optimum mechanical properties were realized. The best results were obtained when the ratio ranged from 0.4 to 0.6. The flexural strength and fracture toughness of the SiC ceramics were $550\~650\;MPa$ and $5.5\~6.5$ MPa${\cdot}m^{1/2}$, respectively.

• 한국세라믹학회지
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• 제35권4호
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• pp.413-419
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• 1998

${\beta}$-silicon carbides with yttrium aluminum garnet of 2,5,10 mol% were prepared by a liquid--phase sint-ering and the microstructural evolution and phase transformation were investigated during sintering as functions of liquid-phase amount and sintering time. The rate of grain growth decreases with the addition of the amount of yttrium aluminum garnet (YAG) in the SiC starting powder however the apparent density and the aspect ratio of grains in sintered body increase. The phase transformation from ${\beta}$-SiC to ${\alpha}$-SiC were dependent on the liquid-phase amount and sintering time.

• 한국연소학회:학술대회논문집
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• 한국연소학회 2012년도 제44회 KOSCO SYMPOSIUM 초록집
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• pp.25-27
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• 2012

In this paper, combustion process in the perforated silicon carbide(SiC) tube using a two dimensional approaches with GRI Mechanism 1.2 was investigated. The computational mesh structure which is divided into $60{\times}15$ and boundary conditions are set to constant mass flow rate at the inlet and constant pressure condition at the outlet respectively. Its result shows that the temperature on this peak was roughly 100K higher than the adiabatic flame temperature of 2223K for a free laminar flame at these conditions.

• JSTS:Journal of Semiconductor Technology and Science
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• 제5권3호
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• pp.182-186
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• 2005

In this work, thermal evaporation system was employed to deposit thin films of SiC on glass substrates in order to determine the parameters of them. Measurements included transmission, absorption, Seebak effect, resistivity and conductivity, absorption coefficient, type of energy band-gap, extinction coefficient as functions of photon energy and the effect of increasing film thickness on transmittance. Results explained that SiC thin film is an n-type semiconductor of indirect energy band-gap of ${\sim}3eV$, cut-off wavelength of 448nm, absorption coefficient of $3.4395{\times}10^{4}cm^{-1}$ and extinction coefficient of 0.154. The experimental measured values are in good agreement with the typical values of SiC thin films prepared by other advanced deposition techniques.

• 마이크로전자및패키징학회지
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• 제31권3호
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• pp.99-104
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• 2024

전력전자 기술의 진보와 고효율 전력 반도체에 대한 수요가 증가함에 따라, 기존의 실리콘(Si) 반도체의 한계를 극복하기 위한 대안으로 실리콘 카바이드(SiC) 소자가 주목받고 있다. SiC 소자는 높은 스위칭 속도로 인해 탁월한 스위칭 효율을 가능하게 하지만, 파워모듈 내부에서 발생하는 기생 인덕턴스(Parasitic Inductance)로 인해 전압 진동 및 오버슈트 현상이 발생하여 전기적 신뢰성과 효율성에 문제를 일으킬 수 있다. 이러한 문제를 해결하기 위해 두 가지 접근법을 제시하고 입증하였다. 먼저, RC 스너버 회로를 적용하여 기생 인덕턴스의 영향을 완화함으로써 전기적 안정성을 증대시키는 방법을 시도하였다. 두 번째 방법으로 리드프레임 설계 최적화를 통하여 기생 인덕턴스를 감소시키는 방법을 시도하였다. 이 두 가지 접근법 모두 시뮬레이션과 실험을 통해 검증함으로써 SiC 파워 모듈의 전기적 신뢰성과 효율성을 동시에 향상시킬 수 있음을 보였다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 하계학술대회 논문집 Vol.9
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• pp.132-132
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• 2008

Silicon carbide (SiC) is an attractive material for high-power, high-temperature, and high-frequency applications. So far, atomic force microscopy (AFM) has been extensively used to study the surface charges, dielectric constants and electrical potential distribution as well as topography in silicon-based device structures, whereas it has rarely been applied to SiC-based structures. In this work, the surface potential and topography distributions SiC with different doping levels were measured at a nanometer-scale resolution using a scanning kelvin probe force microscopy (SKPM) with a non-contact mode AFM. The measured results were calibrated using a Pt-coated tip and a metal defined electrical contacts of Au onto SiC. It is assumed that the atomically resolved surface potential difference does not originate from the intrinsic work function of the materials but reflects the local electron density on the surface. It was found that the work function of the Au deposited on SiC surface was higher than that of original SiC surface. The dependence of the surface potential on the doping levels in SiC, as well as the variation of surface potential with respect to the schottky barrier height has been investigated. The results confirm the concept of the work function and the barrier heights of metal/SiC structures.