• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 하계학술대회 논문집 Vol.9
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• pp.67-68
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• 2008

In this study we have developed a packaged silicon carbide power diode with blocking voltage of 2kV. PiN diodes with 7 field limiting rings (FLRs) as an edge termination were fabricated on a 4H-SiC wafer with $30{\mu}m$-thick n-epilayer with donor concentration of $1.6\times10^{15}cm^{-3}$. From packaged PiN diode testing, we obtained reverse blocking voltage of 2kV, forward voltage drop of 4.35V at 100A/$cm^2$, on-resistance of $6.6m{\Omega}cm^2$, and about 8 nanosec reverse recovery time. These properties give a potential for the power system application.

• 한국전기전자재료학회논문지
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• 제26권11호
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• pp.785-789
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• 2013

Silicon Carbide (SiC) is the material with the wide band-gap (3.26 eV), high critical electric field (~2.3 MV/cm), and high bulk electron mobility (~900 $cm^2/Vs$). These electronic properties allow attractive features, such as high breakdown voltage, high-speed switching capability, and high temperature operation compared to Si devices. In general, device design has a significant effect on the switching and electrical characteristics. It is known that in this paper, we demonstrated that the switching performance and breakdown voltage of IGBT is dependent with doping concentration of p-base region and drift layer by using 2-D simulations. As a result, electrical characteristics of SiC-IGBT deivce is higher breakdown voltage ($V_B$= 1,600 V), lower on-resistance ($R_{on}$= 0.43 $m{\Omega}{\cdot}cm^2$) than Si-IGBT. Also, we determined that processing time and cost is reduced by the depth of n-drift region of IGBT was reduced.

• 동굴
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• 제79호
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• pp.77-81
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• 2007

In this paper deals with behavior of the magnetic abrasive using Sr-Ferrite on polishing charateristiccs in a internal finishing of staninless steel pipe a tying magnetic abrasive polishing. The magnetic polishing is the useful method to finish some machinery fabrications by using magnetic power. This method is one of the precision techniques and has in aim for clean technology in the transportation of the pure gas in the clean pipes. The magnetic abrasive polishing method is not so common in the field of machine that it is not known to widely. There are rarely researcher in this field because of non-effectiveness of magnetic abrasive. Therefore, in this paper we deals with the development of the magnetic abrasive with the use of Sr-Ferrite. In this development, abrasive grain SiC has been made by using the resin bond fabricated at low temperature. And magnetic abrasive powder was fabricated from the Sr-Ferrite which was crushed into 200 mesh. The XRD analysis result shows that only SiC abrasive and Sr-Ferrite crystal peaks were detected, explaining that resin bond was not any more to contribute chemical reaction. From MACRO analysis, we found that SiC abrasive and Sr-Ferrite were strongly bonding with each other.

• KIEE International Transactions on Electrophysics and Applications
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• 제4C권3호
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• pp.111-116
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• 2004

The Ni/SiC Schottky diode was fabricated with the $\alpha$-SiC thin film grown by the ICP-CVD method on a (111) Si wafer. $\alpha$-SiC film has been grown on a carbonized Si layer in which the Si surface was chemically converted to a very thin SiC layer achieved using an ICP-CVD method at $700^{\circ}C$. To reduce defects between the Si and $\alpha$-SiC, the surface of the Si wafer was slightly carbonized. The film characteristics of $\alpha$-SiC were investigated by employing TEM (Transmission Electron Microscopy) and FT-IR (Fourier Transform Infrared Spectroscopy). Sputterd Ni thin film was used as the anode metal. The boundary status of the Ni/SiC contact was investigated by AES (Auger Electron Spectroscopy) as a function of the annealing temperature. It is shown that the ohmic contact could be acquired beyond a 100$0^{\circ}C$ annealing temperature. The forward voltage drop at 100A/cm was I.0V. The breakdown voltage of the Ni/$\alpha$-SiC Schottky diode was 545 V, which is five times larger than the ideal breakdown voltage of the silicon device. As well, the dependence of barrier height on temperature was observed. The barrier height from C- V characteristics was higher than those from I-V.

• 한국해양공학회:학술대회논문집
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• 한국해양공학회 2003년도 춘계학술대회 논문집
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• pp.294-299
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• 2003

The efficiency of complex slurry preparation route for the development of high performance RS-SiCf/SiC composites has been investigated. The green bodies for RS-SiC and RS-SiCf/SiC composite materials prior to the infiltration of molten silicon were prepared with various C/SiC complex matrix slurries, which associated with both different sizes of starting SiC particles and blending ratios of starting SiC and carbon particles. The reinforcing materials in the composite system were uncoated and C coated Tyranno SA SiC fiber. The characterization of RS-SiC and RS-SiCf/SiC composite materials was examined by means of SEM, EDS and three point bending test. Based on the mechanical property-microstructure correlation, process optimization methodology is discussed.

• 한국세라믹학회지
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• 제44권7호
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• pp.349-353
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• 2007

2D SiC fiber-SiC (SiC/SiC) composites were fabricated via slurry infiltration and a stacking process. The effects of the additive composition and content in SiC slurries and the effect of the sintering time on the sintered density and strength of SiC/SiC composites were investigated. A slurry containing $Al_2O_3-Y_2O_3-MgO$ (AYM) additives led to a higher strength compared to a slurry containing $Al_2O_3-Y_2O_3-CaO$ (AYC) additives. The sintered density increased as the sintering time increased and showed a maximum (>98%) at 4 h. In contrast, the flexural strength increased as the sintering time increased and showed a maximum (615 MPa) at 6 h. The relative density and flexural strength increased as the additive content increased.

• 한국세라믹학회지
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• 제44권7호
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• pp.375-380
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• 2007

Tribological properties of carbon layers produced by high temperature chlorination of SiC ceramic and DLC (diamond-like carbon) coatings produced by ion plating method were investigated and compared. Carbon coatings were produced by exposure of ball and disc type SiC in chlorine and hydrogen gas mixtures at $1200^{\circ}C$. After treatment for 10 h, dense carbon films up to $180{\mu}m$ in thickness were formed. Tribological behavior of newly developed carbon films were compared with that of DLC films. Wear resistance and frictional coefficient of the surface modified ball and disc type SiC were significantly improved compared to an untreated SiC specimen, and also the modified carbon layer had better performance than DLC coatings. Therefore, in this study, the newly developed carbon films have several advantages over existing carbon coatings such as DLC coatings and showed superior tribological performances.

• 한국세라믹학회지
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• 제56권3호
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• pp.256-268
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• 2019

In this research, some mechanical properties of Al₂O₃-based composites containing nanoSiC and nanoMgO additives, including elasticity modulus, hardness, and fracture toughness, have been evaluated. Micron-sized Al₂O₃ powders containing 0.08 wt.% nanoMgO particles have been mixed with different volume fractions of nanoSiC particles (2.5 to 15 vol.%). Untreated samples have been sintered by using hot-press technique at temperatures of 1600 to 1750℃. The results show significant increases in the mechanical characteristics with increases in the sintering temperature and amount of nanoSiC particles, with the result that the elasticity modulus, hardness, and fracture toughness were obtained as 426 GPa, 21 GPa, and 4.5 MPa.m^1/2, respectively.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 추계학술대회 논문집
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• pp.533-536
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• 2001

Single crystal cubic silicon carbide(3C-SiC) thin film were deposited on Si(100) substrate up to a thickness of 4.3 $\mu\textrm{m}$ by APCVD(atmospheric pressure chemical vapor deposition) method using hexamethyildisilane(HMDS) at 1350$^{\circ}C$. The HMDS flow rate was 0.5 sccm and the carrier gas flow rate was 2.5 slm. The HMDS flow rate was important to get a mirror-like. The growth rate of the 3C-SiC films was 4.3 $\mu\textrm{m}$/hr. The 3C-SiC epitaxical layers on Si(100) were characterized by XRD(X-ray diffraction), raman scattering and RHEED(reflection high-energy electron diffraction), respectively The 3C-SiC distinct phonons of TO(transverse optical) near 796 cm$\^$-1/ and LO(longitudinal optical) near 974${\pm}$1 cm$\^$-1/ were recorded by raman scattering measurement. The deposition films were identified as the single crystal 3C-SiC phase by XRD spectra(2$\theta$=41.5$^{\circ}$). Also, with increase of films thickness, RHEED patterns gradually changed from a spot pattern to a streak pattern

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 추계학술대회 논문집
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• pp.521-524
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• 2001

In this letter, we report on the investigation of Ti, Pt/Si/Ti Ohmic contacts to p-type 4H-SiC. The contacts were formed by a 2-step vacuum annealing at 500$^{\circ}C$ for 1h, 950$^{\circ}C$ for 10 min respectively. The contact resistances were measured using the transmission line model method, which resulted in specific contact resistivities in the 3.5x10$\^$-3/ and 6.2x10$\^$-4/ ohm/$\textrm{cm}^2$, and the physical properties of the contacts were examined using x-ray diffraction, microscopy, AES(auger electron spectroscopy). AES analysis has shown that, at this anneal temperature, there was a intermixing of the Ti and Si, migration of into SiC. Overlayer of Pt had the effect of decreasing the specific contact resistivity and improving the surface morphology of the annealed contact.