• Proceedings of the Korea Association of Crystal Growth Conference
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• 1997.10a
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• pp.81-85
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• 1997

철질화물 및 Mo-Si계 규화물을 합성하기 위하여 실온 메카노케미칼 공정을 적용하였다. 메카노케미칼 처리는 고에너지 유성형 볼밀장치를 사용하였고 용기는 진공배기 후 암모니아 혹은 아르곤 가스로 충전시킨 후 벌밀처리를 행하였다. 분말의 특성평가는 XRD, DTA/DSC, SEM 및 EPMA 등에 의하여 행하였다. 철질화물의 경우 실온에서 최대 23.3 at.%N의 $\varepsilon$상 질화물을 얻을 수 있었다. 또한 Mo-SirP의 경우 100시간 메카노케미칼 처리시킴으로서 MiSi$_2$규화물을 합성할 수 있었으며 얻어진 분말의 결정립은 25cm로 매우 미세한 결정립의 분말재료임이 확인되었다.

• Proceedings of the IEEK Conference
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• 2000.11b
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• pp.41-44
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• 2000

Ultra large scale integrated circuit(ULSI) & complementary metal oxide semiconductor(CMOS) circuits require gate electrode materials such as meta] silicides, titanium-silicide for gate oxides. Many previous authors have researched the improvements sub-micron gate oxide quality. However, little has been done on the electrical quality and reliability of ultra thin gates. In this research, we recommend novel shallow trench isolation structure and two step TiSi$_{2}$ formation for sub 0.1${\mu}{\textrm}{m}$ gate oxide.

• Proceedings of the Korean Vacuum Society Conference
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• 1994.06a
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• pp.124-125
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• 1994

• 한국전자현미경학회:학술대회논문집
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• 2007.05a
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• pp.108-113
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• 2007

• Journal of the Korean institute of surface engineering
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• v.35 no.2
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• pp.107-112
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• 2002

We have studied diffusion behavior of NiFe/Ag bilayer deposited by on silicon Ion Beam Sputtering methods. The diffusion behavior of NiFe and Ag in NiFe/Ag thin film is analyzed by Medium Energy Ion Scattering Spectroscopy. For samples without Ta underlayer, silicides such as Ni-Si or Fe-Si were formed at Si substrate and NiFe interface. In contrast, Ag predominantly diffused into the NiFe layer probably through their grain boundaries for Ta underlayered samples.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.438-439
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• 2013

Microelectronic devices의 접촉저항의 향상을 위해 Metal silicides의 형성 mechanism과 전기적 특성에 대한 연구가 많이 이루어지고 있다. 지난 수십년에 걸쳐, Ti silicide, Co silicide, Ni silicide 등에 대한 개발이 이루어져 왔으나, 계속적인 저저항 접촉 소재에 대한 요구에 의해 최근에는 Rare earth silicide에 관한 연구가 시작되고 있다. Rare-earth silicide는 저온에서 silicides를 형성하고, n-type Si과 낮은 schottky barrier contact (~0.3 eV)를 이룬다. 또한, 비교적 낮은 resistivity와 hexagonal AlB2 crystal structure에 의해 Si과 좋은 lattice match를 가져 Si wafer에서 high quality silicide thin film을 성장시킬 수 있다. Rare earth silicides 중에서 ytterbium silicide는 가장 낮은 electric work function을 갖고 있어 낮은 schottky barrier 응용에서 쓰이고 있다. 이로 인해, n-channel schottky barrier MOSFETs의 source/drain으로써 주목받고 있다. 특히 ytterbium과 molybdenum co-deposition을 하여 증착할 경우 thin film 형성에 있어 안정적인 morphology를 나타낸다. 또한, ytterbium silicide와 마찬가지로 낮은 면저항과 electric work function을 갖는다. 그러나 ytterbium silicide에 molybdenum을 화합물로써 높은 농도로 포함할 경우 높은 schottky barrier를 형성하고 epitaxial growth를 방해하여 silicide film의 quality 저하를 야기할 수 있다. 본 연구에서는 ytterbium과 molybdenum의 co-deposition에 따른 silicide 형성과 전기적 특성 변화에 대한 자세한 분석을 TEM, 4-probe point 등의 다양한 분석 도구를 이용하여 진행하였다. Ytterbium과 molybdenum을 co-deposition하기 위하여 기판으로 $1{\sim}0{\Omega}{\cdot}cm$의 비저항을 갖는 low doped n-type Si (100) bulk wafer를 사용하였다. Native oxide layer를 제거하기 위해 1%의 hydrofluoric (HF) acid solution에 wafer를 세정하였다. 그리고 고진공에서 RF sputtering 법을 이용하여 Ytterbium과 molybdenum을 동시에 증착하였다. RE metal의 경우 oxygen과 높은 반응성을 가지므로 oxidation을 막기 위해 그 위에 capping layer로 100 nm 두께의 TiN을 증착하였다. 증착 후, 진공 분위기에서 rapid thermal anneal(RTA)을 이용하여 $300{\sim}700^{\circ}C$에서 각각 1분간 열처리하여 ytterbium silicides를 형성하였다. 전기적 특성 평가를 위한 sheet resistance 측정은 4-point probe를 사용하였고, Mo doped ytterbium silicide와 Si interface의 atomic scale의 미세 구조를 통한 Mo doped ytterbium silicide의 형성 mechanism 분석을 위하여 trasmission electron microscopy (JEM-2100F)를 이용하였다.

• Journal of Powder Materials
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• v.6 no.3
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• pp.215-223
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• 1999

The synthesis of $Ni_5Si_2,\;Ni_2Si$ and NiSi has been investigated by mechanical alloying (MA) of Ni-27.9at%Si, Ni-33.3at%Si and Ni-50.0at%Si powder mixtures. As-received and premilled elemental powders were subjected to MA. The as-received Ni powder was spherical and the mean particle size 48.8$\mu$m, whereas the premilled Ni powder was flaky and the mean particle diameter and thickness were found to be 125 and 5$\mu$m, respectively. The mean surface area of the premilled Mi powder particle was 3.5 times as large as that of the as-received Ni powder particle. The as-received Si powder was was 10.0$\mu$m. Self-propagating high-temperature synthesis (SHS) reaction, followed by a slow reaction (a solid state diffusion), was observed to produce each Ni silicide during MA of the as-received elemental powders. In other word , the reactants and product coexisted for a long period of MA of time. Only SHS reaction was, however, observed to produce each Ni silicide during MA of the premilled elemental powders, indicating that each Ni sillicide formed rather abruptly at a short period of MA time. The mechanisms and reaction rates for the formation of the Ni silicides appeared to be influenced by the elemental powder particle size and shape as well as the heat of formation of the products $(Ni_5Si_2$longrightarrow-43.1kJ/mol.at., $Ni_2Si$$\rightarrow$-47.6kJ/mol.at.).

• Journal of Powder Materials
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• v.12 no.4 s.51
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• pp.273-278
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• 2005

Nanostructured TiN/$TiB_2$/$TiSi_2$ and TiN/$TiB_2$/$Ti_5Si_2$ composite powders have been prepared by mechanochemical reaction from mixtures of Ti, BN, and $Si_3N_4$ powders. The raw materials have reacted to form a uniform mixture of TiN, $TiB_2$ and $TiSi_2$ or $Ti_5Si_3$ depending on the amount of $Si_3N_4$ used in the starting mixtures, and the reaction proceeded through so-called mechanically activated self-sustaining reaction (MSR). Fine TiN and $TiB_2$ crystallites less than a few tens of nanometer were homogeneously dispersed in the amorphous $TiSi_2$ or $Ti_5Si_3$ matrix after milling for 12 hours. These amorphous matrices became crystalline phases after annealing at high temperatures as expected, but the original microstructure did not change significantly.

• Proceedings of the Korean Geotechical Society Conference
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• 2008.03a
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• pp.1332-1343
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• 2008

The purpose of this study was to investigate the feasibility of using sedimentation calcium carbonate production based on microorganism activities in the strength manifestation of various soil conditions including ground. For analysis and comparison of microbial cementation soil's strength, unconfined compression test was executed by each content of soil(S), water(W), microorganism(B), microorganism and deposit (BF), microorganism, admixture and deposit(BCF) at specimen. The result, the strength of SB(soil+microorganism) and SBF(soil+microorganism+deposit) increased about 8%, 15% than SW(soil+water). Also, initial strength increased. But the strength of SBC(soil+microorganism+admixture) and SBCF(soil+microorganism+deposit+admixture) increased about 71%, 115% than SW(soil+water). The results of the SEM analysis, leading to the formation of an adhesive substance layers at the surface and resulting in firm particle configuration. The XRD examination of the sediment resulting from the reaction between the microorganism and the deposit control agent confirmed the presence of a type of calcium carbonate ($CaCo_3$) vaterite, which affects soil strength formation, as well as sodium silicate, silicides and so forth. This indicates that microorganism plays an important role in the production of carbonate ($CaCo_3$), sodium silicate and silicides. It affects to revelation of ground strength.

• Korean Journal of Materials Research
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• v.9 no.2
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• pp.168-172
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• 1999

We have studied the formation of Co/Ti bilayer silicide with low resistivity and good thermal stability on the heavily boron doped $\textrm{p}^{+}$-Si region. In this paper, Co/Ti bilayer silicides were fabricated by depositing Co($150\AA$)/Ti($50\AA$) films on the clean $\textrm{p}^{+}$-Si substrates in an E-beam evaporator and performing the two step RTA process (first annealing: 650$50^{\circ}C$/20sec, second annealing: $800^{\circ}C$/20sec) in a $N_2$ambient with the pressure of $\textrm{10}^{-1}$atm. Co/Ti bilayer silicides obtained from our experiments exhibited the low resistivity of about $18\mu\Omega$-cm and the uniform thickness of about $500\AA$ without change of sheet resistance and agglomeration under the long post0annealing time up to $1000^{\circ}C$.