• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.27 no.6
• /
• pp.389-393
• /
• 2014

A thin metal-embedding Schottky device was fabricated for an efficient photoelectric device. Semitransparent thick of 10 nm metal layers were deposited by sputtering of Ag and Ni on a Si substrate. The (111) N-type Si wafers with one-side polished, 450~500 ${\mu}m$ and resistivity $1{\sim}20{\Omega}{\cdot}cm$ were used. High rectifying ratio about 100 from Ni-Schottky device was achieved. This design would provide an effective scheme for high-performing photoelectric devices.

• Proceedings of the Optical Society of Korea Conference
• /
• 2000.02a
• /
• pp.100-101
• /
• 2000

편광기는 광변조기나 스위치 등과 같이 구동을 위해 하나의 편광성분을 요구하는 소자를 동작시킬 때 필수적으로 요구되는 소자이다. 편광기를 구현하는 기법에 따라 벌크형, 집적광학형 그리고 광섬유형으로 구분할 수 있다. 광섬유형은 광섬유를 절단하지 않고 제작이 가능하여 삽입손실이 작고 높은 기계적 신뢰성을 가진다. 측면 연마된 광섬유(side-polished fiber)위에 복굴절 크리스탈$^{(1)}$ , 액정크리스탈$^{(2)}$ , 금속막$^{(3)}$ , 그리고 복굴절을 가지는 평면도파로$^{(4)}$ 를 결합한 구조가 잘 알려져 있다. 특히 광섬유-평면도파로 결합 구조는 원하는 파장에서 TE혹은 TM 편광성분을 선택적으로 제거할 수 있고 평면도파로 물질선택이 용이한 구조이기 때문에 많은 주목을 받아 왔다. 하지만 지금 까지 알려진 광섬유-평면도파로 결합기를 이용한 편광기는 편광선택 작용이 발생하는 파장범위가 좁아 범용적으로 사용하는데 적합하지 않는 점이 있다. (중략)

• Proceedings of the Optical Society of Korea Conference
• /
• 2000.02a
• /
• pp.252-253
• /
• 2000

본 논문은 광통신 파장(1.3$mu extrm{m}$)에서 측면 연마된 광섬유와 열광학 평면도파로 결합기의 온도변화에 따른 광의 세기변화를 이용한 광섬유형 온도센서에 관한 연구이다. 본 연구에서 제안된 소자는 광통신영역에서 변화를 가지기 때문에 원거리 측정이 가능하고 열광학 평면도파로의 물질의 선택과 소자의 구조에 따라 넓은 온도감지 범위와 높은 분해능을 가지는 소자의 구현이 가능하다. (중략)

• Korean Journal of Optics and Photonics
• /
• v.5 no.2
• /
• pp.311-318
• /
• 1994

We fabricated fiber-optic polarizers utilizing polarization selective mode coupling between the guided mode of a fiber and the surface plasmon mode supported by a thin aluminium film deposited on the polished side of a fiber. AI thin films with various thicknesses were coated onto the 633 nm, 830 nm, 1.3 fJITI single mode fibers. The maximum extinction ratio was higher than 30 dB for most of the samples and the best result was 42 dB at 90 A film thickness, with 1.3 fJITI single mode fiber. The insertion loss ranged from 0.2 dB to 1.5 dB.1.5 dB.

• Proceedings of the Optical Society of Korea Conference
• /
• 2000.02a
• /
• pp.98-99
• /
• 2000

코어 가까이 측면 연마한 광섬유를 이용하여 광 여파기, 편광기, 감쇠기등의 광통신 소자로 응용하고자 하는 연구가 많이 진행되고 있다.$^{[1]}$ 이 소자는 광섬유를 절단하지 않은 상태에서 코어 가까이 측면 연마하여 광학적 기능을 가진 소자를 제작함으로서 공정이 간단하고 삽입손실이 작은 특성을 가지며 기계적 신뢰성이 우수하다. 측면 연마된 광섬유를 이용한 광 증폭의 경우 광섬유의 소산장(evanescent field)과 펌핑광에 의해서 여기되는 활성 물질과의 상호작용에 의해서 광 이득을 얻는다. 소산장 결합에 의한 평면도파로에서의 광 증폭$^{[2]}$ 과 다중 모드 광섬유에서의 펄스 레이저 증폭, 단일 모드 광섬유에서 632.8nm He-Ne 레이저의 연속광원 증폭$^{[3]}$ 은 이미 보고되었다. 본 논문에서는 측면 연마된 다중 모드 광섬유의 연마된 부위에 색소가 첨가된 용액을 떨어뜨림으로서 발생하는 소산장 결합에 의해서 광섬유내를 진행하는 연속적인 He-Ne 레이저 광을 증폭시키는 방법을 제안하고자 한다. (중략)

• Proceedings of the Optical Society of Korea Conference
• /
• 2000.08a
• /
• pp.12-13
• /
• 2000

광섬유형 센서는 전자기 간섭에 강하고 높은 감도와 원거리측정 등의 장점이 있어 이에 대한 연구가 활발하게 진행되고 있다. 온도센서의 경우 다양한 구조의 센서 구현이 용이하고 넓은 온도범위에서의 측정이 가능하다. 하지만 이러한 광섬유형센서는 대부분 온도변화를 물리량의 변화로 감지하기 때문에 작은 온도의 감지에는 구조적인 한계를 가지는 경우가 많으며 이러한 문제점을 개선하기 위하여 많은 연구가 시도되고 있다$^{[1]}$ . 본 논문은 이러한 점을 인지한 측면연마된 광섬유와 평면도파로 결합기형 고감도 온도센서에 관한 연구이다. 본 연구에서는 온도의 감지를 열광학 평면도파로의 열광학계수에 의존하기 때문에 물질의 변화에 따라 다양한 온도감도 조절과 높은 분해능을 가지는 센서의 구현이 가능하다. (중략)

• The Journal of Korean Academy of Prosthodontics
• /
• v.32 no.1
• /
• pp.148-169
• /
• 1994

The concept of biologic attachment of load-bearing implants has developed over the past decades as an alternative to the difficulties associated with long term implantation using mechanical fixation and bone cement. The choice of implant material is also as critical an element as site preparation or insertion procedure. The properties of implants that affect host tissue responses are not limited to chemical composition alone, but also include shape, surface characteristics, site of implantation, and mechanical interaction with host tissues. Initial mechanical interlocking prevents micromotion and may be a prerequisite for direct bone apposition. A hard tightening of screws does not necessarily mean a stronger fixation and final tightening of the fixtures is dependent on the experience of the operator. Removal torque is lower than insertion torque. The purpose of this study was to investigate differences in the removal torques at the bone-implant interface of polished and sandblasted Titanium. This experiment will give insight into important factors that must be considered when interpreting in vivo screwing forces on implants during the connection of the transmucosal abutments. We evaluated the significance of different surface textures by comparison of the withdrawal forces necessary for removal of otherwise identical rough and polished implants of Titanium and also evaluated interfacial response on the light microscopic level to implant surface. And the priority of the area of insertion on osseointegration were evaluated. 9 Titanium implants - among them, 3 were for the developmental - of either a smooth or rough surface finish were inserted in the dog mandible in the right side. 3 months later Kanon Torque Gauge was used to unscrew the implants. The results were as follows : 1. No significant difference was seen in the removal torque due to variation in surface treatment, 23 Ncm for the sandblasted and 23.33 Ncm for the polished surface (p>0.05). 2. Implants in the anterior (25 Ncm) mandible showed better resistance to unscrewing in comparison to ones in the posterior (18 Ncm) region (p<0.05). 3. Developmental fixtures (22 Ncm) had similar pullout strength to the control group (p>0.05).

• Proceedings of the Korean Vacuum Society Conference
• /
• 2014.02a
• /
• pp.489.2-489.2
• /
• 2014

The planar type flexible piezoelectric energy harvesters (PEH) based on PbZr0.52Ti0.48O3 (PZT) thin films on the flexible substrates are demonstrated to convert mechanical energy to electrical energy. The planar type energy harvesters have been realized, which have an electrode pair on the PZT thin films. The PZT thin films were deposited on double side polished sapphire substrates using conventional RF-magnetron sputtering. The PZT thin films on the sapphire substrates were transferred by PDMS stamp with laser lift-off (LLO) process. KrF excimer laser (wavelength: 248nm) were used for the LLO process. The PDMS stamp was attached to the top of the PZT thin films and the excimer laser induced onto back side of the sapphire substrate to detach the thin films. The detached thin films on the PDMS stamp transferred to adhesive layer coated on the flexible polyimide substrate. Structural properties of the PZT thin films were characterized using X-ray diffraction (XRD) and scanning electron microscopy (SEM). To measure piezoelectric power generation characteristics, Au/Cr inter digital electrode (IDE) was formed on the PZT thin films using the e-beam evaporation. The ferroelectric and piezoelectric properties were measured by a ferroelectric test system (Precision Premier-II) and piezoelectric force microscopy (PFM), respectively. The output signals of the flexible PEHs were evaluated by electrometer (6517A, Keithley). In the result, the transferred PZT thin films showed the ferroelectric and piezoelectric characteristics without electrical degradation and the fabricated flexible PEHs generated an AC-type output power electrical energy during periodically bending and releasing motion. We expect that the flexible PEHs based on laser transferred PZT thin film is able to be applied on self-powered electronic devices in wireless sensor networks technologies. Also, it has a lot of potential for high performance flexible piezoelectric energy harvester.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2004.11a
• /
• pp.276-279
• /
• 2004

Plasma enhanced chemical vapor deposition (PECVD) of silicon nitride (SiN) is a proven technique for obtaining layers that meet the needs of surface passivation and anti-reflection coating. In addition, the deposition process appears to provoke bulk passivation as well due to diffusion of atomic hydrogen. This bulk passivation is an important advantage of PECVD deposition when compared to the conventional CVD techniques. A further advantage of PECVD is that the process takes place at a relatively low temperature of 300t, keeping the total thermal budget of the cell processing to a minimum. In this work SiN deposition was performed using a horizontal PECVD reactor system consisting of a long horizontal quartz tube that was radiantly heated. Special and long rectangular graphite plates served as both the electrodes to establish the plasma and holders of the wafers. The electrode configuration was designed to provide a uniform plasma environment for each wafer and to ensure the film uniformity. These horizontally oriented graphite electrodes were stacked parallel to one another, side by side, with alternating plates serving as power and ground electrodes for the RF power supply. The plasma was formed in the space between each pair of plates. Also this paper deals with the fabrication of multicrystalline silicon solar cells with PECVD SiN layers combined with high-throughput screen printing and RTP firing. Using this sequence we were able to obtain solar cells with an efficiency of 14% for polished multi crystalline Si wafers of size 125 m square.

• Journal of Sensor Science and Technology
• /
• v.13 no.5
• /
• pp.350-355
• /
• 2004

A novel UV sensor was manufactured and characterized using the evanescentfield coupling between fiber-planar waveguide (PWG) coupler and prism. A spiroxazine dye was chosen as planar waveguide because its photochromic isomerization induced by UV irradiation. A novel UV sensor was proposed to measure the variation of refractive index and absorption coefficient simultaneously. The wavelength responses of these sensors by UV exposure times were measured 0.48 nm/sec, 0.757 nm/sec, and ATR output power variations were measured $-0.424{\mu}W$/sec and $-0.62{\mu}W$/sec when UV exposure power were 3 mW and 5 mW, respectively.