• Proceedings of the Korean Vacuum Society Conference
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• 1999.07a
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• pp.121-121
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• 1999

Gallium nitride (GaN) semiconductor is intensively under investigation for commercialization of short wavelength light emitting devices and laser diodes. One of serious obstacles to overcome is to reduce the defect density in GaN film grown by various techniques such as MOCVD, HVPE, etc. Many research groups including SAIT are trying to improve the defect density to 106-107/cm2 from the level of 108-1010/cm2. We have investigated epitaxial growth behaviour of GaN thin and thick films under hidride vapour phase epitaxy (HVPE) condition. In this report, we present the microstructural and crystallographical characteristics of the GaN films grown on sapphire (0001) substrate which were studied by both conventional and high-resolution transmission electron microscopy (TEM). Also we present some microscopic analysis results obtained from GaN films grown by ELO(dpitzsial lateral overgrowth)-HVPE and from GaN quantum well structures grown by MOCVD. Another serious problem in growing GaN thick film by HVPE is internal micro-cracks. We also comment the origin of the micro-crack.

• 한국정보디스플레이학회:학술대회논문집
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• 2002.08a
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• pp.541-544
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• 2002

The reflective liquid crystal(LC) imager in one panel Liquid Crystal on Silicon(LCoS) System must have the properties such as fast response time, high contrast ratio(C/R) and voltage holding ratio(VHR) which are more related to the lifetime of imager than the others. As the high-output light including a short wavelength from UHP lamp is exposed to LCoS imager, the indium metal impurities, which decrease the C/R and VHR, are diffused from ITO thin film on glass. To ensure the high reliable LCoS imager for HD projection TV, we have studied the effects of the plasma treatment on ITO film to reduce impurities in imager.

• Tribology and Lubricants
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• v.18 no.5
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• pp.339-344
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• 2002

Whenever moving surfaces of machine driving elements interact in air and lubricating oil, oxidization film on the surfaces are generated. It is effect to prevent friction and wear on contact area. Since the electronic current progress the oxidization of metal, if the electronic flow be regulated, the thickness of oxidization film can be regulated and friction characteristics can be improved. But the electronic current can deteriorate friction characteristics, so various characteristics must be investigated on transforming of electronic current. Therefor, using the Norton equation in this study, short current were transformed between frictional materials using ball on disk type tester. It was studied on effect of electronic current for friction characteristics.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.08a
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• pp.89-92
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• 2003

ITO thin films were deposited by RF-magnetron sputtering method and crystallization behavior of the films with and without external heating as a function of deposition time was examined. X-ray diffraction results indicated an amorphous state of the film when the deposition time is short about 10 min. When the deposition time was increased over 20 min development of crystallization of the films is observed. Because RF-sputtering transfers the high-energy to the growing film by energetic bombardment, it is believed that considerable activation energy for the crystallization of the film has transferred during deposition, which resulted in the crystallization of ITO thin films without external energy supply.

• Proceedings of the KIEE Conference
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• 2006.07c
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• pp.1357-1358
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• 2006

Indium tin oxide (ITO) thin film is a transparent electrode, which is widely applied to solar battery, illuminators, optical switches, liquid crystal displays (LCDs), plasma display panels (PDPs), and organic light emitting displays (OLEDs) due to its easy formation on glass substrates, goof optical transmittance, and good conductivity. ITO thin film is generally fabricated by various methods such as spray, CVD, evaporation, electron gun deposition, direct current electroplating, high frequency sputtering, and reactive DC sputtering. However, some problems such as peaks, bumps, large particles, and pin-holes on the surface of ITO thin film were reported, which caused the destruction of color quality, the reduction of device life time, and short-circuit. Chemical mechanical polishing (CMP) processis one of the suitable solutions which could solve the problems.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.07a
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• pp.377-382
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• 2000

Film bulk acoustic resonator (FBAR) using AIN reactively sputtered at room temperature was fabricated. The FBAR is composed of a piezoelectric aluminium nitride thin film, top electrode of Al and bottom electrode of Au connected by a short (200${\mu}{\textrm}{m}$) transmission line on both sides and reflector layers of SiO$_2$- W Pair. The active areas of Al and Au were patterned using 150${\mu}{\textrm}{m}$ diameter shadow mask. The series resonance frequency (fs) and the parallel resonance frequency (fp) were measured at 1.976 GHz and 2.005 GHz, respectively. The minimum insertion loss and return loss were 6.1 dB and 37.19 dB, and the quality factor (Q) was 4261.

• Journal of Korean Vacuum Science & Technology
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• v.4 no.1
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• pp.18-22
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• 2000

For the enhancement of the nucleation density of the diamond film, we introduced the cyclic process. The cyclic process was carried out by the on/off control of CH$_4$ flow rate for a relatively short time (10 min), compared with the total reaction time (6 h). Prior to depositing the diamond film, we made the pretreated glass substrate via the unidirectional scratch using ∼l $\mu\textrm{m}$ size diamond powders. Diamond films were deposited on the pretreated glass substrate in a microwave plasma enhanced chemical vapor deposition (MPECVD) system. We observed the enhancement of the nucleation density of the diamond films caused by the cyclic process. Detailed surface morphologies of the substrate were investigated after the cyclic process. Based on these results, we discussed the cause for the enhancement of the nucleation density on the pretreated glass substrate by the cyclic process.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.313-313
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• 2013

For high-performance TFT (Thin film transistor), poly-crystalline semiconductor thin film with low resistivity and high hall carrier mobility is necessary. But, conventional SPC (Solid phase crystallization) process has disadvantages in fabrication such as long annealing time in high temperature or using very expensive Excimer laser. On the contrary, MIC (Metal-induced crystallization) process enables semiconductor thin film crystallization at lower temperature in short annealing time. But, it has been known that the poly-crystalline semiconductor thin film fabricated by MIC methods, has low hall mobility due to the residual metals after crystallization process. In this study, Ni metal was shallow implanted using PIII&D (Plasma Immersion Ion Implantation & Deposition) technique instead of depositing Ni layer to reduce the Ni contamination after annealing. In addition, the effect of external magnetic field during annealing was studied to enhance the amorphous silicon thin film crystallization process. Various thin film analytical techniques such as XRD (X-Ray Diffraction), Raman spectroscopy, and XPS (X-ray Photoelectron Spectroscopy), Hall mobility measurement system were used to investigate the structure and composition of silicon thin film samples.

• Corrosion Science and Technology
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• v.14 no.6
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• pp.261-266
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• 2015

The capacity of passive metal to repassivate after film damage determines the development of local corrosion and the resistance to corrosion failures. In this work, the repassivation kinetics of 316L stainless steel (316L SS) was investigated in borate buffer solution (pH 9.1) using a novel abrading electrode technique. The repassivation kinetics was analyzed in terms of the current density flowing from freshly bare 316L SS surface as measured by a potentiostatic method. During the early phase of decay (t < 2 s), according to the Avrami kinetics-based film growth model, the transient current was separated into anodic dissolution ($i_{diss}$) and film formation ($i_{film}$) components and analyzed individually. The film reformation rate and thickness were compared according to applied potential. Anodic dissolution initially dominated the repassivation for a short time, and the amount of dissolution increased with increasing applied potential in the passive region. Film growth at higher potentials occurred more rapidly compared to at lower potentials. Increasing the applied potential from 0 $V_{SCE}$ to 0.8 $V_{SCE}$ resulted in a thicker passive film (0.12 to 0.52 nm). If the oxide monolayer covered the entire bare surface (${\theta}=1$), the electric field strength through the thin passive film reached $1.6{\times}10^7V/cm$.

• Journal of the Korean Chemical Society
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• v.64 no.2
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• pp.74-78
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• 2020

A push-pull conjugated dye (DCMP) was covalently immobilized on a silanized glass surface to produce a high sensitivity pH sensor film for operating in the acidic region. A pH-sensitive sensor film was prepared by photo-initiating copolymerization of a modified DCMP (DCMA), 2-hydroxyethyl methacrylate (HEMA) and triethylene glycol dimethacrylate on the silanized glass surface. The absorbance of the sensor film increased with increasing pH between pH 2.0 and 5.0, and the fluorescence intensity of the film also increased about 50 times with increasing pH in the same pH range. The sensor film was reversible and reproducible under acidic conditions. The sensor film showed a relatively short response time between 20-50 seconds and high selectivity for proton in the presence of various metal ions.