• Journal of information and communication convergence engineering
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• 제14권1호
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• pp.40-44
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• 2016

The device coupling between the stacked top/bottom field-effect transistors (FETs) in two types of monolithic 3D inverter (M3INV) with/without a metal layer in the bottom tier is investigated, and then the regime of the thickness T_ILD and dielectric constant ε_r of the inter-layer distance (ILD), the doping concentration N_d (N_a), and length L_g of the channel, and the side-wall length L_SW where the stacked FETs are coupled are studied. When N_d (N_a) < 10¹⁶ cm^-3 and L_SW < 20 nm, the threshold voltage shift of the top FET varies almost constantly by the gate voltage of the bottom FET, but when N_d (N_a) > 10¹⁶ cm^-3 or L_SW > 20 nm, the shift decreases and increases, respectively. M3INVs with T_ILD ≥ 50 nm and ε_r ≤ 3.9 can neglect the interaction between the stacked FETs, but when T_ILD or ε_r do not meet the above conditions, the interaction must be taken into consideration.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 추계학술대회 논문집 Vol.21
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• pp.24-25
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• 2008

The effect of heat treatment in $HfO_2$ as charge trap with $SiO_2/Si_3N_4/SiO_2$ as tunnel oxide layer in capacitors has been investigated. Rapid thermal annealing (RTA) were carried out at the temperature range of 600 - $900^{\circ}C$. It is found that all devices carried out heat treatment have large threshold voltage shift Especially, device performed heat treatment at $900^{\circ}C$ has been confirmed the largest memory window. Also, Threshold voltage shift of device used conventional $SiO_2$ as tunnel oxide layer was smaller than that with $SiO_2/Si_3N_4/SiO_2$.

• 한국조명전기설비학회:학술대회논문집
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• 한국조명전기설비학회 2008년도 추계학술대회 논문집
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• pp.93-96
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• 2008

형광램프를 오랜 기간 사용하게 되면 전자방출 도포막의 일부가 전극으로부터 떨어져 나와 음극 주위인 관 끝에 부착되어 흑화 현상을 일으킴으로써 광출력이 감소하고 광효율이 떨어져 교체가 필요하게 된다. 이러한 상태를 오래 방치한다면 램프 양단 전압의 상승으로 필라멘트가 과열되어 형광등 소켓에 열이 전도되면서 화재 발생까지 도달할 가능성이 크다. 따라서 본 논문에서는 형광램프 수명 말기에 나타나는 현상을 검측하고, 적정 교체시기를 판단하여 표시하는 표시장치가 구비된 형광등기구 개발 모델을 제시하고자 한다.

• Geomechanics and Engineering
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• 제13권5호
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• pp.809-823
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• 2017

This paper describes lab test results of artificial rock-like material samples having a plane joint. Cyclic shear tests were performed under different normal loads and different shear displacement amplitudes. For this purpose, multi-stage normal loading tests (30 kN, 60 kN, 90 kN, 180 kN, 360 kN and 480 kN) with cyclic excitation at frequency of 1.0 Hz and different shear displacement amplitudes (0.5 mm, 1.0 mm, 2.0 mm, 4.0 mm, 5.0 mm, and 8.0 mm) were conducted using the big shear box device GS-1000. Experimental results show, that shear forces increase with the increase of normal forces and quasi-static friction coefficient is larger than dynamic one. With the increase of normal loads, approaching the peak value of shear forces needs larger shear displacements. During each cycle the normal displacements increase and decrease (rotational behavior in every cycle). Peak angle of inclination increases with the increase of normal load. A phase shift between maximum shear displacement and maximum shear force is observed. The corresponding time shift decreases with increasing normal load and increases with increasing shear displacement amplitudes.

• 한국전기전자재료학회논문지
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• 제24권1호
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• pp.32-35
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• 2011

Top-emission device has a merit of high aperture ratio and narrow emission spectrum compared to that of bottom-emission one. Emission spectra of top-emission organic light-emitting diodes depending on a layer thickness and view angle were analyzed using a theory of microcavity. Device structure was manufactured to be Al (100 nm)/TPD/$Alq_3$/LiF (0.5 nm)/Al (2 nm)/Ag (30 nm). N,N'-diphenyl-N,N'- di (m-tolyl)-benzidine (TPD) and tris (8-hydroxyquinoline) aluminium (Alq3) were used as a hole-transport layer and emission layer, respectively. And a thickness of TPD and Alq3 layer was varied in a range of 40 nm~70 nm and 60 nm~110 nm, respectively. Angle-dependent emission spectrum out of the device was measured with a device fixed on a rotating plate. Since the top-emission device has a property of microcavity, it was observed that the emission spectrum shift to a longer wavelength region as the organic layer thickness increases, and to a shorter wavelength region as the view angle increases. Layer thickness and view-angle dependent emission spectra of the device were analyzed in terms of microcavity theory. A reflectivity of semitransparent cathode and optical path length were deduced.

• 전기학회논문지
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• 제56권12호
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• pp.2217-2220
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• 2007

In this paper, we propose a new wafer level package (WLP) for the RF MEMS applications. The Film Bulk Acoustic Resonator (FBAR) are fabricated and hermetically packaged in a new wafer level packaging process. With the use of Au-Sn eutectic bonding method, we bonded glass cap and FBAR device wafer which has groove-shaped via formed in the backside. The device wafer includes a electrical bonding pad and groove-shaped via for connecting to the external bonding pad on the device wafer backside and a peripheral pad placed around the perimeter of the device for bonding the glass wafer and device wafer. The glass cap prevents the device from being exposed and ensures excellent mechanical and environmental protection. The frequency characteristics show that the change of bandwidth and frequency shift before and after bonding is less than 0.5 MHz. Two packaged devices, Tx and Rx filters, are attached to a printed circuit board, wire bonded, and encapsulated in plastic to form the duplexer. We have designed and built a low-cost, high performance, duplexer based on the FBARs and presented the results of performance and reliability test.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 추계학술대회 논문집 Vol.21
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• pp.57-58
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• 2008

We have studied an organic layer and semitransparent Al electrode thickness dependent optical properties and microcavity effects for top-emission organic light-emitting diodes. Manufactured top-emission device structure is Al(100nm)/TPD(xnm)/Alq(ynm)/LiF(0.5nm)/Al(25nm). While a thickness of total organic layer was varied from 85nm to 165n, a ratio of those two layers was kept to be about 2:3. Semitransparent Al cathode was varied from 20nm to 30nm for the device with an organic layer total thickness of 140nm. As the thickness of total organic layer increases, the emission spectra show a shift of peak wavelength from 490nm to 580nm, and the full width at half maxima from 90nm to 35nm. The emission spectra show a blue shift as the view angle increases. Emission spectra depending on a transmittance of semitransparent cathode show a shift of peak wavelength from 515nm to 593nm. At this time, the full width at half maximum was about to be a constant of 50nm. With this kind of microcavity effect, we were able to control the emission spectra from the top-emission organic light-emitting diodes.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2004년도 Asia Display / IMID 04
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• pp.839-842
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• 2004

We present a fast-switching electro-optical device based on flexoelectro-optic effect in short pitch cholesterics oriented in uniform lying helix texture. The device has two operating modes: amplitude and phase modulation mode. The amplitude modulation mode is a fast in-plane switching of the device optic axis that enables to achieve a high percent of modulation of the transmitted light intensity whereas the phase mode gives a continuous change of the refractive index and thus of the phase shift of the transmitted light. By using a small concentration of diacrylate monomer and selecting the illumination conditions we have been able to create a inhomogeneous polymeric network mostly localized at both substrate surfaces and stabilize the two switching modes.

• International Journal of Precision Engineering and Manufacturing
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• 제2권4호
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• pp.75-80
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• 2001

An error analysis is very important to estimate performance of a precision machine. This study proposes an error analysis for a new parallel device, a cubic parallel device. The cubic parallel manipulator has error sources including upper and lower universal joint errors due to the directional changes in the link and actuation errors. The maximum errors of the end effector are affected by the axial direction changes of each links and the clearances of the universal joints when the parallel manipulator is moving along a path. It is found that the changes of errors mostly occur at the positions where the directions of exerting link forces shift. The error analysis is based on an error model formed from the relation between the universal point errors and the end-effector accuracy. The analysis method can be also used in predicting the accuracy of other parallel devices.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2000년도 하계학술대회 논문집 C
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• pp.1739-1741
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• 2000

DC current density-voltage and impedance spectroscopy studies have been performed on indium-tin-oxide(ITO)/para-sexiphenyl(6p)/aluminium organic electroluminescent device. The device exhibited a blue color emission, The turn-on voltage of the device is observed at 5V from the current density-voltage measurements. The impedance spectroscopy measurements show that a resonance frequency shift with applied DC bias is observed and a single semi-circle Cole-Cole plot is confirmed. The bias-dependent bulk resistance and bias-independent bulk capacitance is observed.