• 자원환경지질
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• 제49권1호
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• pp.63-75
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• 2016

전 세계적 유 가스전에서 균열저류층의 비율은 매우 높다. 따라서 경제적인 유가가 뒷받침 될 경우 균열저류층에 대한 시추기술 수요는 계속 증가될 전망이다. 이 해설논문의 목적은 균열저류층에서 이수손실을 방지하는데 적합한 시추기술 선정에 도움을 주기 위한 것이다. 이러한 목적을 달성하기 위해 균열저류층을 이수손실의 규모에 따라 부분 이수손실지층과 전체이수손실지층으로 재분류하였다. 부분이수손실지층의 시추 시에는 이수 첨가물인 이수손실방지제와 시멘트 스퀴징 방법이 유용하며, 전체이수손실지층에서는 천부의 경우 케이싱시추방법이, 심부의 경우 이수캡시추 기법이 이수손실을 방지하는데 유용한 시추방법인 것을 알 수 있었다. 이러한 결과는 이탈리아 Medusa-1과 카타르의 North field 현장사례를 통해서도 확인할 수 있었다.

• 자원환경지질
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• 제33권5호
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• pp.425-434
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• 2000

The 3.5 KHz seismic survey was carried out for studying the distribution pattern of the unconsolidated sediments of the Yeosu Sound on the southern coast of the Korean Peninsula. Field data originally recorded in analog are converted and processed digitally to recover the high-resolution acoustic profiles. Across the north-south trending channel with the depth of 20~30 m, different seismic facies types are observed in the top section of sediments. The western part is characterized by the continuous high-amplitude subparallel reflectors within which the acoustic turbidity as a token of the presence of gas is commonly observed, whereas the counterpart largely shows poor reflectors and has shallow acoustic basement toward the north. The dissimilarity of the seismic expression across the channel can be interpreted as the result of the change of depositional environment caused by relative sea-level fluctuations of the late-Quaternary. During the last glacial period, the Yeosu Sound was exposed and eroded by the paleo-Seomjin River. By the following rapid rise of sea level, it was covered by the transgressive sand sheet. When the sea level reached near the present position, the muddy sediment has accumulated only in the western part of the Yeosu Sound as its depositional front has moved toward the north. It is partly caused by the asymmetrical tidal current in the Yeosu Sound where the flood near the bottom has stronger current flow and contains more suspended sediments.

• 자원환경지질
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• 제55권4호
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• pp.407-419
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• 2022

메탄(CH₄)이 유출되는 관정 주변에서 토양(비포화대) 가스 모니터링과 자료 해석 방법을 제시하고자 토양 가스의 성분변화를 약 3일간 측정하였다. 이를 위해서 포항 지역의 시험 관정 2개(TB2, TB3)의 주변 1 m 이내에서 방사상으로 토양 가스를 채취하고 현장에서 CO₂, CH₄, N₂, O₂의 농도를 분석하였다. TB2의 관정 정두(wellhead)에서 30 cm 떨어진 지점에서 CO₂ 플럭스도 측정하였다. 아울러 TB2 관정 정두의 가스 시료와 대기 시료도 채취하여 분석하였다. 모니터링 마지막 날 채취한 시료는 실험실에서 CO₂의 탄소동위원소(δ¹³C_CO2)를 분석하였다. 서로 12.7 m 떨어져 있는 두 시험 관정 중 TB3는 시멘팅이 되어 있고, TB2는 시멘팅이 되어 있지 않았다. 생지구화학 반응 기반(process-based) 해석을 적용한 결과, 비포화대 가스의 CO₂, O₂, N₂ 농도와 N₂/O₂ 의 변화는 모두 CH₄의 산화를 지시하는 선과 가스의 용해에 의한 농도의 변화를 지시하는 선 사이에 위치하고 있었다. 또한 TB2 정두에서 측정된 CH₄은 대기의 CH₄에 비해서 5.2배 높은 값을 나타나고 있었다. 시멘팅이 되어 있지 않은 관정(TB2) 주변 비포화대에서 나타난 높은 CO₂ 농도(평균 1.148%)는 CH₄의 산화에 의해 증가한 것으로 판단된다. 반면, 시멘팅이 된 관정(TB3) 주변의 비포화대 CO₂는 상대적으로 낮은 농도(0.136%)를 나타내고 있었다. 따라서 CH₄가 산출되는 관정의 주변 토양가스(CO₂ 포함)는 관정의 완결 상태(시멘팅)에 크게 영향을 받는 것으로 판단된다. 본 연구는 천연가스 개발 관정 주변 토양의 환경 모니터링을 위한 전략 수립에 활용될 수 있으며, CO₂ 지중저장을 위한 주입정 및 관측정 주변 누출 감시에 활용될 수 있다. 또한 본 연구의 방법은 천연가스 저장소, 유류 오염 토양의 모니터링에 활용 가치가 있다.

• 한국표면공학회:학술대회논문집
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• 한국표면공학회 2000년도 추계학술발표회 초록집
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• pp.3-4
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• 2000

Many researchers are interested in the synthesis and characterization of carbon nitride and diamond-like carbon (DLq because they show excellent mechanical properties such as low friction and high wear resistance and excellent electrical properties such as controllable electical resistivity and good field electron emission. We have deposited amorphous carbon nitride (a-C:N) thin films and DLC thin films by shielded arc ion plating (SAIP) and evaluated the structural and tribological properties. The application of appropriate negative bias on substrates is effective to increase the film hardness and wear resistance. This paper reports on the deposition and tribological OLC films in relation to the substrate bias voltage (Vs). films are compared with those of the OLC films. A high purity sintered graphite target was mounted on a cathode as a carbon source. Nitrogen or argon was introduced into a deposition chamber through each mass flow controller. After the initiation of an arc plasma at 60 A and 1 Pa, the target surface was heated and evaporated by the plasma. Carbon atoms and clusters evaporated from the target were ionized partially and reacted with activated nitrogen species, and a carbon nitride film was deposited onto a Si (100) substrate when we used nitrogen as a reactant gas. The surface of the growing film also reacted with activated nitrogen species. Carbon macropartic1es (0.1 -100 maicro-m) evaporated from the target at the same time were not ionized and did not react fully with nitrogen species. These macroparticles interfered with the formation of the carbon nitride film. Therefore we set a shielding plate made of stainless steel between the target and the substrate to trap the macropartic1es. This shielding method is very effective to prepare smooth a-CN films. We, therefore, call this method "shielded arc ion plating (SAIP)". For the deposition of DLC films we used argon instead of nitrogen. Films of about 150 nm in thickness were deposited onto Si substrates. Their structures, chemical compositions and chemical bonding states were analyzed by using X-ray diffraction, Raman spectroscopy, X-ray photoelectron spectroscopy and infrared spectroscopy. Hardness of the films was measured with a nanointender interfaced with an atomic force microscope (AFM). A Berkovich-type diamond tip whose radius was less than 100 nm was used for the measurement. A force-displacement curve of each film was measured at a peak load force of 250 maicro-N. Load, hold and unload times for each indentation were 2.5, 0 and 2.5 s, respectively. Hardness of each film was determined from five force-displacement curves. Wear resistance of the films was analyzed as follows. First, each film surface was scanned with the diamond tip at a constant load force of 20 maicro-N. The tip scanning was repeated 30 times in a 1 urn-square region with 512 lines at a scanning rate of 2 um/ s. After this tip-scanning, the film surface was observed in the AFM mode at a constant force of 5 maicro-N with the same Berkovich-type tip. The hardness of a-CN films was less dependent on Vs. The hardness of the film deposited at Vs=O V in a nitrogen plasma was about 10 GPa and almost similar to that of Si. It slightly increased to 12 - 15 GPa when a bias voltage of -100 - -500 V was applied to the substrate with showing its maximum at Vs=-300 V. The film deposited at Vs=O V was least wear resistant which was consistent with its lowest hardness. The biased films became more wear resistant. Particularly the film deposited at Vs=-300 V showed remarkable wear resistance. Its wear depth was too shallow to be measured with AFM. On the other hand, the DLC film, deposited at Vs=-l00 V in an argon plasma, whose hardness was 35 GPa was obviously worn under the same wear test conditions. The a-C:N films show higher wear resistance than DLC films and are useful for wear resistant coatings on various mechanical and electronic parts.nic parts.