• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2003년도 International Meeting on Information Display
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• pp.1053-1056
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• 2003

Progress in light emitting materials is presented. New polymers based on the Spiro concept show encouraging properties in electroluminescence performance and lifetime. The spiro-polymers can be tailor made to fit the RGB color requirements of a full color display. This class of materials showed recently very promising performance for white emission as well. They are readily soluble, show excellent thermal stability and can be processed by printing or through simple synthetic modification by photolithography technology.

• JSTS:Journal of Semiconductor Technology and Science
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• 제6권3호
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• pp.136-145
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• 2006

Two major processing technologies of GaAs HBT and pHEMT have been released in production at Win Semiconductors corp. to address the strong demands of power amplifiers and switches for both handset and WLAN communications markets. Excellent performance with low processing cost and die shrinkage features is reported from the manufactured MMICs. With the stringent tighter manufacturing quality control WIN has successfully become one of the major pure open foundry house to serve the communication industries. The advancing of both technologies to include E/D-pHEMTs and BiHEMTs likes for multifunctional integration of PA, LNA, switch and logics is also highlighted.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2006년도 제30회 학술논문발표회 초록집
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• pp.110-110
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• 2006

• 한국진공학회:학술대회논문집
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• 한국진공학회 2006년도 제31회 학술논문발표회 초록집
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• pp.133-133
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• 2006

• 한국진공학회:학술대회논문집
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• 한국진공학회 2006년도 제30회 학술논문발표회 초록집
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• pp.148-148
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• 2006

• 전기전자학회논문지
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• 제25권3호
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• pp.578-583
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• 2021

본 논문에서는 반도체의 신뢰성을 테스트하기 위한 가속 시험에 대해 설명하고 자동차 반도체의 신뢰성 테스트 국제 표준인 AEC-Q100에 대해 다룬다. 반도체는 수십년 동안 사용할 수 있기 때문에 수명 전주기에서 발생하는 잠재적인 문제점을 테스트하기 위해서는 집중적으로 스트레스를 가하여 테스트 시간을 최소화하는 가속 시험이 필수적이다. 자동차 반도체에서 사용하는 대표적인 가속 시험인 AEC-Q100은 반도체에서 발생하는 각종 불량과 그 원인을 분석할 수 있도록 설계되었기 때문에 반도체의 수명과 신뢰성을 예측할 수 있을 뿐만 아니라 설계상, 제조상의 문제도 쉽게 찾아낼 수 있다. AEC-Q100은 가속 스트레스 시험, 가속 수명 시험, 패키지 적합성 시험, 공정 신뢰성 시험, 전기적 특성 시험, 결함 검출 시험, 기계적 특성 시험의 7개 테스트 그룹으로 구성되며 동작 온도에 따라 Grade 0에서 Grade 3까지 4개의 등급이 존재한다. 반도체 소자, 광전자 반도체, 센서 반도체, 멀티 칩 모듈, 수동 소자 분야에서는 각각 AEC-Q101, Q102, Q103, Q104, Q200이 사용된다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2015년도 제49회 하계 정기학술대회 초록집
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• pp.86.1-86.1
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• 2015

As the feature size of Si-based semiconductor shrinks to nanometer scale, we are facing to the problems such as short channel effect and leakage current. One of the solutions to cope with those issues is to bring III-V compound semiconductors to the semiconductor structures, because III-V compound semiconductors have much higher carrier mobility than Si. However, introduction of III-V semiconductors to the current Si-based manufacturing process requires great challenge in the development of process integration, since they exhibit totally different physical and chemical properties from Si. For example, epitaxial growth, surface preparation and wet etching of III-V semiconductors have to be optimized for production. In addition, oxidation mechanisms of III-V semiconductors should be elucidated and re-growth of native oxide should be controlled. In this study, surface preparation methods of various III-V compound semiconductors such as GaAs, InAs, and GaSb are introduced in terms of i) how their surfaces are modified after different chemical treatments, ii) how they will be re-oxidized after chemical treatments, and iii) is there any effect of surface orientation on the surface preparation and re-growth of oxide. Surface termination and behaviors on those semiconductors were observed by MIR-FTIR, XPS, ellipsometer, and contact angle measurements. In addition, photoresist stripping process on III-V semiconductor is also studied, because there is a chance that a conventional photoresist stripping process can attack III-V semiconductor surfaces. Based on the Hansen theory various organic solvents such as 1-methyl-2-pyrrolydone, dimethyl sulfoxide, benzyl alcohol, and propylene carbonate, were selected to remove photoresists with and without ion implantation. Although SPM and DIO3 caused etching and/or surface roughening of III-V semiconductor surface, organic solvents could remove I-line photoresist without attack of III-V semiconductor surface. The behavior of photoresist removal depends on the solvent temperature and ion implantation dose.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2004년도 제27회 학술발표회 초록집
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• pp.267-267
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• 2004

• 한국자기학회:학술대회 개요집
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• 한국자기학회 2003년도 하계학술연구발표회 및 한.일 공동심포지엄
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• pp.262-262
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• 2003

Creating a new spin-based electronics (often called "spin-electronics" or "spintronics") is one of the hot topics in the current solid-state physics and electronics research. In order to utilize the spin degree of freedom in solids, particularly in semiconductors the current electronics is based on, we need to fabricate appropriate materials, understand and control the spin-dependent phenomena. In this ta1k, I will review the recent deve1opments of epitaxial ferromagnetic hetero structures based on semiconductors towards spintronics. This includes the semiconductor materials and hetero structures having high ferromagnetic transition temperature (III-V based alloy magnetic semiconductors, Mn-delta-doped magnetic semiconductors, and related heterostructures), spin-dependent transport and tunneling, and their device applications (tunneling magnetoresistance devices and three-terminal devices). Future issues and prospects will be also discussed.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2006년도 제31회 학술논문발표회 초록집
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• pp.132-132
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• 2006