• Journal of Astronomy and Space Sciences
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• v.29 no.4
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• pp.343-349
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• 2012

The solar proton telescope (SPT) is considered as one of the scientific instruments to be installed in instruments for the study of space storm (ISSS) which is determined for next generation small satellite-1 (NEXTSat-1). The SPT is the instrument that acquires the information on energetic particles, especially the energy and flux of proton, according to the solar activity in the space radiation environment. We performed the simulation to determine the specification of the SPT using geometry and tracking 4 (GEANT4). The simulation was performed in the range of 0.6-1,000 MeV considering that the proton, which is to be detected, corresponds to the high energy region according to the solar activity in the space radiation environment. By using aluminum as a blocking material and adjusting the energy detection range, we determined total 7 channels (0.6~5, 5~10, 10~20, 20~35, 35~52, 52~72, and >72 MeV) for the energy range of SPT. In the SPT, the proton energy was distinguished using linear energy transfer to compare with or discriminate from relativistic electron for the channels P1-P3 which are the range of less than 20 MeV, and above those channels, the energy was determined on the basis of whether silicon semiconductor detector (SSD) signal can pass or not. To determine the optimal channel, we performed the conceptual design of payload which uses the SSD. The designed SPT will improve the understanding on the capture and decline of solar energetic particles at the radiation belt by measuring the energetic proton.

• Journal of the Korean Society of Radiology
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• v.5 no.2
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• pp.97-101
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• 2011

In this study, the basic research verifying possibility of applications as radiology image sensor in Digital Radiography was performed, the radiology image sensor was fabricated using double layer technique tio decrease dark current. High efficiency material in substitution for a-Se have been studied as a direct method of imaging detector in Digital Radiography to decrease dark current by using Hetero junction already used as solar cell, semiconductor. Particle-In-Binder method is used to fabricate radiology image sensor because it has a lot of advantages such as fabrication convenient, high yield, suitability for large area sensor. But high leakage current is one of main problem in PIB method. To make up for the weak points, double layer technique is used, and it is considered that high efficient digital radiation sensor can be fabricated with easy and convenient process. In this study, electrical properties such as leakage current, sensitivity is measured to evaluate double layer radiation sensor material.

• Journal of Radiation Protection and Research
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• v.38 no.3
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• pp.132-137
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• 2013

Cryogenic particle detectors have recently been adopted in radiation detection and measurement because of their high energy resolution. Many of these detectors have demonstrated energy resolutions better than the theoretical limit of semiconductor detectors. We report the development of alpha spectrometer using a micro-fabricated magnetic calorimeter coupled to a large-area particle absorber. A piece of gold foil of $2{\times}2{\times}0.05mm^3$ was glued to the paramagnetic temperature sensor made of sputtered Au:Er film to serve as an absorber for incident alpha particles. We performed experiments with 241Am source at cryogen free adiabatic demagnetization refrigerator (CF-ADR). A high energy resolution of 6.8 keV in FWHM was obtained for 5.5 MeV alpha particles.

• Journal of Electrical Engineering and information Science
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• v.3 no.2
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• pp.239-244
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• 1998

Piezoelectric pressure sensors and pyroelectric infrared detectors based on ZnO thin film have been integrated with GaAs metal-semiconductor field effect transistor (MESFET) amplifiers. Surface micromachining techniques have been applied in a GaAs MESFET process to form both microsensors and electronic circuits. The on-chip integration of microsensors such as pressure sensors and infrared detectors with GaAs integrated circuits is attractive because of the higher operating temperature up to 200 oC for GaAs devices compared to 125 oC for silicon devices and radiation hardness for infrared imaging applications. The microsensors incorporate a 1${\mu}$m-thick sputtered ZnO capacitor supported by a 2${\mu}$m-thick aluminum membrane formed on a semi-insulating GaAs substrate. The piezoelectric pressure sensor of an area 80${\times}$80 ${\mu}$m2 designed for use as a miniature microphone exhibits 2.99${\mu}$V/${\mu}$ bar sensitivity at 400Hz. The voltage responsivity and the detectivity of a single infrared detector of an area 80${\times}$80 $\mu\textrm{m}$2 is 700 V/W and 6${\times}$108cm$.$ Hz/W at 10Hz respectively, and the time constant of the sensor with the amplifying circuit is 53 ms. Circuits using 4${\mu}$m-gate GaAs MESFETs are fabricated in planar, direct ion-implanted process. The measured transconductance of a 4${\mu}$m-gate GaAs MESFET is 25.6 mS/mm and 12.4 mS/mm at 27 oC and 200oC, respectively. A differential amplifier whose voltage gain in 33.7 dB using 4${\mu}$m gate GaAs MESFETs is fabricated for high selectivity to the physical variable being sensed.

• Proceedings of the KIEE Conference
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• 1994.07b
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• pp.1280-1282
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• 1994

The method of passivation for protecting the $Hg_{l-x}Cd_xTe$ surface is important device fabrication process, because the surface components are highly reactive leading to its chemical and electrical instability. Especially, the material of which composition is x=0.2 or 0.3, is narrow bandgap semiconductor and used as detector of infrared radiation. The device performance of narrow bandgap semiconductors are largely governed by the properties of the semiconductor surface. The electro-chemical processing of $Hg_{l-x}Cd_xTe$ allows rigorous control of the surface chemistry and provides an in-situ monitor of surface reaction. So electro-chemical reduction at specific potential can selectively eliminate the undesirable species on the surface and manipulated to reproducibly attain the desired stoichiometry. This method shows to assess the quality or chemically treated $Hg_{l-x}Cd_xTe$ good surface.

• Journal of the Institute of Electronics and Information Engineers
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• v.53 no.5
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• pp.143-151
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• 2016

The aim of this study is to investigate the optimal algorithm to extract medical radiation induced pixel signal from complementary metal-oxide semiconductor (CMOS) sensors of smartphones camera. The pixel intensity and pixel number of smartphone camera were measured as the X-ray dose was increased. The front camera of the smartphone camera has low noise property and excellent dose response as compared to the back camera of the smartphone. The indirect method which uses scintillation crystal in front of the smartphone camera, couldn't improve the X-ray detection efficiency as compared to the direct method which does not use any scintillator in front of the smartphone camera. When we used the algorithm which employing threshold level on the pixel intensity and pixel number, the dose linearity was more higher for the pixel intensity rather for the pixel number. The use of pixel intensity of Y color component which represents the grey scale, would be efficient in terms of the radiation detection efficiency and reducing the complexity of the image processing. We expect that the radiation dose monitoring can be managed effectively and systematically by using the proposed radiation detection algorithm, thus eventually will contribute to the public healthcare.

• Journal of the Korean Society of Radiology
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• v.4 no.2
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• pp.21-25
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• 2010

Recently, various semiconductor compounds as radiation detection material have been researched for a diagnostic x-ray detector application. In this paper, we have fabricated the CdS detecton sensor that has good photosensitivity and high x-ray absorption efficiency among other semiconductor compounds, and evaluated the application feasibility by investigating the detection properties about energy range of diagnostic x-ray generator. We have fabricated the line voltage selector(LCV) for a signal acquisition and quantities of CdS sensor, and designed the voltage detection circuit and rectifying circuit. Also, we have used a relative relation algorithm according to x-ray exposure condition, and fabricated the interface board with DAC controller. Performance evaluation was investigated by data processing using ANOVA program from voltage profile characteristics according to resistive change obtained by a tube voltage, tube current, and exposure time that is a exposure condition of x-ray generator. From experimental results, an error rates were reduced according to increasing of a tube voltage and tube current, and a good properties of 6%(at 90 kVp) and 0.4%(at 320 mA) ere showed. and coefficient of determination was 0.98 with relative relation of 1:1. The error rate according to x-ray exposure time showed exponential reduction because of delayed response velocity of CdS material, and the error rate has 2.3% at 320 msec. Finally, the error rate according to x-ray dose is below 10%, and a high relative relation was showed with coefficient of determination of 0.9898.

• Progress in Medical Physics
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• v.12 no.1
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• pp.71-77
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• 2001

The region, near the edge of a radiation beam, where the dose changes rapidly according to the distance from the beam axis is known as the penumbra. There is a sharp dose gradient zone even in megavoltage photon beams due to source size, collimator, lead alloy block, other accessories, and internal scatter ray. We investigate dosimetric characteristics on penumbra regions of a standard collimator and compare to those of theoritical model for the optimal use of the system in radiotherapy. Peripheral dose distribution of 6 W Photon beams represents penumbral forming function as the depth. Also we have discussed that the peripheral dose distribution of clinical photon beams, differences between calculation dose use of emperical penumbral forming function and measurements in penumbral region. Predictions by emperical penumbral forming functions are compared with measurements in 3-dimensional water phantom and it is shown that the method is capable of reproduceing the measured peripheral dose values usually to within the statistical uncertainties of the data. The semiconductor detector and ion chamber were positioned at a dmax depth, 5cm depth, 10cm depth, and its specific ratio was determined using a scanning data. The effective penumbra, the distance from 80% to 20% isodose lines were analyzed as a function of the distance. The extent of penumbra will also expand with depth increase. Difference of measurement value and model functions value according to character of the detector show small error in dose distribution of the peripheral dose.

• Journal of radiological science and technology
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• v.37 no.2
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• pp.135-141
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• 2014

This study was evaluated the linearity and reproducibility according to dose, and reproducibility according to delay time by changing tube current amount (5 mAs, 10 mAs, 16 mAs, 20 mAs, 25 mAs, 32 mAs respectively, which are low energy radiations) using Glass Dosimeter (GD) and piranha semiconductor dosimeter which are used for measuring exposure dose. Measurements of radiation dose were performed using external detector of piranha 657 which is multi-function QA device (RTI Electronic, Sweden). Conditions of measurement were 80 kVp, SSD 100 cm and exposure region is $10cm{\times}10cm$. Glass dosimeter was exposed to radiation. Twenty-four glass dosimeters were divided into six groups (5 mAs, 10 mAs, 16 mAs, 20 mAs, 25 mAs, 32 mAs respectively), then measured. This study was resulted by measuring the linearity and reproducibility according to change of tube current in low energy field. In dose characteristic of GD, this study could be useful as previous study with regard to dose characteristic according to change of tube voltage in low energy field.

• Progress in Medical Physics
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• v.12 no.2
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• pp.125-131
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• 2001

We was investigate the dosimetric characteristics of the virtual wedge and it compared to the conventional fixed wedge. Also we was evaluate the quality factor of the experimental multi-channel dosimetry system for virtual wedge. Recently virtual wedge technique and wedge fraction methods are available through the computer controlled asymmetric collimator or the independent jaw in medical linear accelerator for radiation therapy. The dosimetric characteristics are interpreted by radiation field analyzer RFA-7 system and PTW-UNIDOS system. Experimental multi-channel dosimetry system for virtual wedge was consists of the electrometer, the solid detector and array phantom. The solid detectors were constructed using commercially diodes for the assessment of quality assurance in radiotherapy. And it was used for the point dose measuring and field size scanning. The semiconductor detector and ion chamber were positioned at a dmax, 5 cm, 10 cm, 20 cm depth and its specific ratio was determined using a scanning data. Wedge angles in fixed and virtual type are compared with measurements in water phantom and it is shown that the wedge angle 15$^{\circ}$, 30$^{\circ}$, 45$^{\circ}$were agree within 1$^{\circ}$ degree in 6, 10 MV photon beams. In PDD and beam flatness, experimental multi-channel disimetry system was capable of reproduceing the measured values usually to within $\pm$2.1% the statistical uncertainties of the data. It was used to describe dosimetric characteristics of virtual wedge in clinical photon beams. Also we was evaluate optimal use of the virtual wedge and improve the quality factor of the experimental multi-channel dosimetry system for virtual wedge.