• 제목/요약/키워드: semiconductor laser

검색결과 525건 처리시간 0.021초

Coherent Absorption Spectroscopy with Supercontinuum for Semiconductor Quantum Well Structure

  • Byeon, Ciare C.;Oh, Myoung-Kyu;Kang, Hoon-Soo;Ko, Do-Kyeong;Lee, Jong-Min;Kim, Jong-Su;Choi, Hyoung-Gyu;Jeong, Mun-Seok;Kee, Chul-Sik
    • Journal of the Optical Society of Korea
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    • 제11권3호
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    • pp.138-141
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    • 2007
  • We suggest that supercontinuum can be used for absorption spectroscopy to observe the exciton levels of a semiconductor nano-structure. Exciton absorption spectrum of a GaAs/AlGaAs quantum well was observed using supercontinuum generated by a microstructrured fiber pumped by a femtosecond (fs) pulsed laser. Significantly narrower peaks were observed in the absorption spectrum from 11 K up to room temperature than photoluminescence (PL) spectrum peaks. Because supercontinuum is coherent light and can readily provide high enough intensity, this method can provide a coherent ultra-broad band light source to identify exciton levels in semiconductors, and be applicable to coherent nonlinear spectroscopy such as electromagnetically induced transparency (EIT), lasing without inversion (LWI) and coherent photon control in semiconductor quantum structures.

Analysis of Spectral Characteristics of Semiconductor Lasers under Strong Optical Injection Locking for Tens of Giga Hz Signal Generation

  • Kim, Jung-Tae
    • Journal of information and communication convergence engineering
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    • 제8권4호
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    • pp.457-460
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    • 2010
  • we have analyzed tens of Giga pulse signal generation using sideband injection locking scheme. The numerical model for semiconductor lasers under the strong optical injection is based on the Lang's equation and has been extended in order to take into account the simultaneous injection of the multiple sidebands of the current-modulated laser. The numerical simulation results show that the unselected sidebands will affect the optical and RF-spectral characteristics even though the semiconductor laser is locked to the target sidebands.

반도체 레이저용 홀로그래픽 시준 렌즈 설계 제작 (Design and Fabrication of Holographic Collimating Lens for Semiconductor Laser)

  • 임용석;곽종훈;최옥식
    • 한국광학회지
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    • 제9권3호
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    • pp.191-198
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    • 1998
  • 비점수차를 갖는 반도체 레이저에서 off-axis 흘로그램 렌즈를 이용하여 수차 제거 방법에 대해 논하였다. Dichromated gelatin 필름을 사용하여 높은 회절효율과 off-axis 방향으로 비점수차 없이 시준되는 반도체 레이저용 호로그래픽 시준 렌즈를 제작하였다. 홀로그램 렌즈는 홀로그래픽 회절과 광선추적(ray-tracing) 방법에 의해 계산 설게하였다. 비점수차의 제거는 기록 및 재생 각도를 적당히 선택하므로서 얻을 수 있다. 홀로그램은 488nm 파장인 Ar+ 레이저를 사용하여 기록하였고, 670nm 파장인 반도체 레이저광으로 재생하였다. 주요 피라미터인 기록 및 재생 각도, 파장, 그리고 비점수차 등을 계산하고 실험적으로 검증하였다.

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다파장 광섬유 격자 레이저의 편광 제어 파장밴드 스위칭 (Polarization-Controlled Waveband Switching in a Multiwavelength Fiber Bragg Grating Laser)

  • 이용욱
    • 전기학회논문지
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    • 제56권12호
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    • pp.2214-2216
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    • 2007
  • Based on a semiconductor optical amplifier and sampled fiber Bragg gratings, polarization-controlled waveband switching in multiwavelength fiber laser is successfully demonstrated at room temperature by using high polarization selectivity of a polarization beam splitter. A multiwavelength-switching operation between eight and six laser lines with signal to noise ratio over 35 dB and wavelength spacing of ${\sim}0.8nm$ has been successfully demonstrated. The switching displacement of the proposed laser was ${\sim}7.1nm$. The intensity unevenness between different laser lines was measured to be less than 6.5 dB. The switching displacement between wavebands (groups of contiguous wavelengths), wavelength channels, and their spacings can be flexibly designed by the selected comb filters.

레이저 산란 메커니즘 매개변수의 실험적 선정 및 태양전지 웨이퍼의 레이저산란패턴 분석에 관한 연구 (Study on Experimental Selection of Parameters in Laser Scattering Mechanism and Analysis of Laser Scattering Patterns in Solar Cell Wafer)

  • 김경범
    • 반도체디스플레이기술학회지
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    • 제10권2호
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    • pp.7-12
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    • 2011
  • In this paper, a laser scattering mechanism are designed to detect micro defects such as dent, scratch, pinhole, etc. Its influential parameters are experimentally selected and scattering patterns of micro defects have been analyzed for silicon wafer in solar cell. As a result of experiments, scattered lights are rather increased in wafer surface with micro defects, in comparison to no micro ones. Scattering parameters are optimally selected for obtaining robust and high quality laser scattering images of micro defects. It is shown that scattered light components are linearly increased according to the increase of micro defect sizes, and the depth of micro-defects give a large influence on optical deflection.

Downward and Upward Air Flow Effects on Fume Particle Dispersion in Laser Line Cutting of Optical Plastic Films

  • Kim, Kyoungjin
    • 반도체디스플레이기술학회지
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    • 제19권2호
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    • pp.37-44
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    • 2020
  • In improving laser cutting of optical plastic films for mass production of optoelectronics display units, it is important to understand particle contamination over optical film surface due to fume particle generation and dispersion. This numerical study investigates the effects of downward and upward air flow motions on fume particle dispersion around laser cut line. The simulations employ random particle sampling of up to one million fume particles by probabilistic distributions of particle size, ejection velocity and angle, and fume particle dispersion and surface landing are predicted using Basset-Boussinesq-Oseen model of low Reynolds number flows. The numerical results show that downward air flow scatters fume particles of a certain size range farther away from laser cut line and aggravate surface contamination. However, upward air flow pushes fume particles of this size range back toward laser cut line or sucks them up with rising air motion, thus significantly alleviating surface contamination.

레이저 다이오드 Mirror면의 Anti-Reflection 코팅 박막 제작 및 특성 분석 (The Manufacture and Properties Analysis of Anti-Reflection Coating Thin Film of Laser Diode Mirror)

  • 기현철;김선훈;김상택;김효진;김회종;홍경진;민용기;조재철;구할본
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2006년도 추계학술대회 논문집 광주전남지부
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    • pp.103-106
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    • 2006
  • Semiconductor laser diode has a reflective facet in a both-ends side fundamentally. Laser performance for improving, Anti-Reflection and High-reflection coating on the facet of semiconductor laser diode. To prevent internal feedback from both facets for realizing superluminescent diode and reducing the reflection-induced intensity noise of laser diode, it's key techniques are AR/HR coatings. In the study AR coating film were manufactured by Ion-Assisted Deposition(IAD) system. Then manufactured coating film measurement electrical properties(L-I-V, Se, Resistor) and Optical properties (wavelength FFP)

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UV레이저를 이용한 마이크로 히터 트리밍 (Micro Heater Trimming using UV Laser)

  • 유승열
    • 반도체디스플레이기술학회지
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    • 제16권3호
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    • pp.36-40
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    • 2017
  • In this paper, a new method of laser trimming of thick film heater is studied. Various laser waves (IR, Green, UV) are used to ablation the heater and the process parameters are also presented. For given initial printed resisters, the cutting length should be prepared to obtain the target resister value in advance. Therefore, the cutting model is very important. The well-known model was tested and proven that it is valid only within a certain range of cutting length. A new model is proposed for a wide range of resister laser trimming. The cutting lengths and resister variation was obtained and formulated. To verify the presented method, the cutting lengths of each resister are calculated for various target resister value and laser trimming using UV is conducted.

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940-nm 350-mW Transverse Single-mode Laser Diode with AlGaAs/InGaAs GRIN-SCH and Asymmetric Structure

  • Kwak, Jeonggeun;Park, Jongkeun;Park, Jeonghyun;Baek, Kijong;Choi, Ansik;Kim, Taekyung
    • Current Optics and Photonics
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    • 제3권6호
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    • pp.583-589
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    • 2019
  • We report experimental results on 940-nm 350-mW AlGaAs/InGaAs transverse single-mode laser diodes (LDs) adopting graded-index separate confinement heterostructures (GRIN-SCH) and p,n-clad asymmetric structures, with improved temperature and small-divergence beam characteristics under high-output-power operation, for a three-dimensional (3D) motion-recognition sensor. The GRIN-SCH design provides good carrier confinement and prevents current leakage by adding a grading layer between cladding and waveguide layers. The asymmetric design, which differs in refractive-index distribution of p-n cladding layers, reduces the divergence angle at high-power operation and widens the transverse mode distribution to decrease the power density around emission facets. At an optical power of 350 mW under continuous-wave (CW) operation, Gaussian narrow far-field patterns (FFP) are measured with the full width at half maximum vertical divergence angle to be 18 degrees. A threshold current (Ith) of 65 mA, slope efficiency (SE) of 0.98 mW/mA, and operating current (Iop) of 400 mA are obtained at room temperature. Also, we could achieve catastrophic optical damage (COD) of 850 mW and long-term reliability of 60℃ with a TO-56 package.

레이저를 이용한 웨이퍼 다이싱 특성 (Characteristics of Laser Wafer Dicing)

  • 이용현;최경진;유승열
    • 반도체디스플레이기술학회지
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    • 제5권3호
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    • pp.5-10
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    • 2006
  • This paper investigates cutting qualities after laser dicing and predicts the problems that can be generated by laser dicing. And through 3 point bending test, die strength is measured and the die strength after laser dicing is compared with the die strength after mechanical sawing. Laser dicing is chiefly considered as an alternative to overcome the defects of mechanical sawing such as chipping on the surface and crack on the back side. Laser micromachining is based on the thermal ablation and evaporation mechanism. As a result of laser dicing experiments, debris on the surface of wafer is observed. To eliminate the debris and protect the surface, an experiment is done using a water soluble coating material and ultrasonic. The consequence is that most of debris is removed. But there are some residues around the cutting line. Unlike mechanical sawing, chipping on the surface and crack on the back side is not observed. The cross section of cutting line by laser dicing is rough as compared with that by mechanical sawing. But micro crack can not be seen. Micro crack reduces die strength. To measure this, 3 point bending test is done. The die strength after laser dicing decreases to a half of the die strength after mechanical sawing. This means that die cracking during package assembly can occur.

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