• Journal of the Semiconductor & Display Technology
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• v.8 no.4
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• pp.31-36
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• 2009

In this paper, the laser cutting characteristics of the flexible PCB using high power Nd:YAG UV laser were investigated. A specific FPCB model was selected for the experiment. Test sheets were made, which had equal materials and layer structure to those of the outline (OL) region and the contact pad (CP) region in the FPCB. The experiment is made up of two stages. In the first stage of the experiment, the laser cutting fluence was found, which is the threshold fluence to cut the test sheets completely. The laser cutting fluence of the OL sheet is $1781.26{\sim}1970.16\;J/cm^2$ and that of the CP sheet is $2109.34{\sim}2134.34\;J/cm^2$. In the second stage, cutting performance and its qualities were analyzed by the experiment. The laser cutting performance remained almost unchanged for all laser and process parameter sets. The average cutting width (top side/bottom side) of the OL sheet was $40.45\;{\mu}m/11.52\;{\mu}m$ and that of the CP sheet was $22.14\;{\mu}m/10.93\;{\mu}m$. However, the laser cutting qualities were different according to the parameters. The adjacent region of the cutting line on the OL sheet was carbonized as the beam speed was low and the overlap coefficient was high. The surface quality around the cutting line of the CP sheet was about the same. Carbonization and debris occurred on the surface of the cutting line. As a result of the experiment, the cutting qualities were better as the overlap coefficient was made low and beam speed high. Therefore, the overlap coefficient 2 or 3 is proper for the FPCB laser cutting.

• Korean Journal of Optics and Photonics
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• v.26 no.6
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• pp.312-317
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• 2015

We investigate the effect of laser-resonator mode size on the output of a Yb:YAG laser that is mode-locked by a semiconductor saturable absorber mirror (SESAM). We demonstrate that the smaller the product of the mode sizes at a SESAM and at a Yb:YAG crystal, the more stable the mode-locked output is. Also, we found numerically that there is a resonator length at which the mode-locked output occurs, regardless of the thermal lens effect of a Yb:YAG.

• Korean Journal of Optics and Photonics
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• v.25 no.2
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• pp.90-94
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• 2014

We propose a Yb:YAG laser Q-switched by a semiconductor saturable absorber and a laser output coupler composed of a polarizer and a quarter-wave plate, and we investigate the output characteristics of the proposed Q-switched laser. We show that the laser power can be varied by rotation of the quarter-wave plate.

• Proceedings of the Korean Magnestics Society Conference
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• 2003.12a
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• pp.150-150
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• 2003

• Journal of the Korean Institute of Telematics and Electronics
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• v.26 no.10
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• pp.1528-1534
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• 1989

Photoeffects at the p-GaP semiconductor/CsNO3 electrolyte interface were investigated in terms of their current-voltage characteristics. The photoeffects at the semiconductor-electrolyte interfaces and their photocurrent variations are verified using Ar ion laser and continuous cyclic voltammetric methods. The mechanism of charge transfer at the photogeneration in the depletion layer rather than the photodecomposition of the p-GaP semiconductor electrode surface and/or the water photoelectrolysis. The adsorption of Cs+ ions at the interface is physical adsorption.

• Korean Journal of Optics and Photonics
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• v.18 no.5
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• pp.317-322
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• 2007

We performed injection-locking by two independent semiconductor lasers and investigated the spectral modes of the injection-locked laser From the observation of the saturated absorption spectrum in the $^{85}Rb$ D1 transition line, we have confirmed that the frequency of the injection-locked slave laser is synchronized by the frequency of the master laser, and the slave laser has a narrow linewidth after injection-locking. According to the intensity injected into the slave laser, we measured the variation of the injection-locking range and the mode of the injection-locked slave laser by using the confocal Fabry-Ferret interferometer. In the case of the incomplete injection-locking, we observed the competition between the free running mode of the slave laser and the mode of the master laser and analyzed the modes of the injection-locked slave laser.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2005.10a
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• pp.415-418
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• 2005

In the semiconductor and optical industry, a new transport system which can replace the conventional transport systems is required. The transport systems are driven by the magnetic field and conveyer belts. The magnetic field may damage semiconductor and the contact force may scratch the optical lens. The ultrasonic wave driven system can solve these problems. In this semiconductor and optical industry, the non-contact system is required fur reducing the damages. The ultrasonic transportation is the solution of the problem. In this paper, the ultrasonic levitation system fur levitating object are proposed. The 3D vibration profiles of the beam are measured by Laser scanning Vibrometer fur verifying the vibration characteristics of the system and the amplitudes of the beam and the levitation heights of object are measured for evaluating the performance.

• Proceedings of the Korean Society for Noise and Vibration Engineering Conference
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• 2005.11a
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• pp.959-962
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• 2005

In the semiconductor and optical industry. a new transport system which can replace the conventional transport system is required. The Transport systems are driven by the magnetic field and conveyer belts. The magnetic field may damage semiconductor and the contact force may scratch the optical lens. The ultrasonic wave driven system can solve these problems. In this semiconductor and optical industry, the non-contact system is required for reducing the damages. The ultrasonic transportation is the solution of the problem. In this paper, the ultrasonic levitation system for levitation object are proposed. The 3D vibration profiles of the beam are measured by Laser Scanning Vibrometer for verifying the vibration characteristics of the system and the amplitudes of the beam and the levitation heights of object are measured fore evaluating the performance.

• Korean Journal of Optics and Photonics
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• v.13 no.5
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• pp.396-399
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• 2002

Using a bi-layer anti-reflection coating of $TiO_2$and $SiO_2,$ we have achieved a minimum facet reflectivity of $~10^{-5}$ and a band width of 27 nm for a reflectivity of $~10^{-4}$ or less for 1.3 $\mu\textrm{m}$ spot size converter integrated semiconductor lasers. This coating is applicable to external-cavity-tuned laser sources and semiconductor optical amplifiers.

• Current Optics and Photonics
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• v.5 no.4
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• pp.384-390
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• 2021

This paper presents a wide-range tunable wavelength-locking technology based on optoelectronic oscillation (OEO) loops for optical fiber sensors and microwave photonics applications, explains the theoretical fundamentals of the design, and demonstrates a method for locking the relative wavelength differences between a leader semiconductor laser and its follower lasers. The input of the OEO loop in the proposed scheme (the relative wavelength difference) determines the radio-frequency (RF) signal frequency of the oscillation output, which is quantized into an injection current signal for feedback to control the wavelength drift of follower lasers so that they follow the wavelength change of the leader laser. The results from a 10-hour continuous experiment in a field environment show that the wavelength-locking accuracy reached ±0.38 GHz with an Allan deviation of 6.1 pm over 2 hours, and the wavelength jitter between the leader and follower lasers was suppressed within 0.01 nm, even though the test equipment was not isolated from vibrations and the temperature was not controlled. Moreover, the tunable range of wavelength locking was maintained from 10 to 17 nm for nonideal electrical devices with limited bandwidth.