• Proceedings of the KOSOMBE Conference
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• v.1997 no.05
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• pp.27-30
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• 1997

As the fundamental study of designing x-ray dosimeter , we measured the voltage variation of CdS, II-VI group semiconductor compound, by mAs variation. We obtained data in the condition of 50, 70 kVp, by increasing the tube current as 1, 2, 2.5, 3.2, 4, 5, 10, 20, 32, 50 and 80 mAs. The output time of CdS was increased as mAs increased. We figured the slope value of 50kVp as 0.0088 and 0.0081 of 70 kVp. And by regression method, we obtained the standard deviation of time, Y axis, at 50 and 70kVp as 0.00268 and 0.00333. The result of this ssudy is so important to design x-ray dosimeter.

• Proceedings of the KIEE Conference
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• 2000.11d
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• pp.754-757
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• 2000

Si PIN diodes are subject to be damaged from the exposure of fast neutron by displacement of Si lattice structure. The defects are effective recombination centers for carriers which migrate through the base region of the PIN diode when forward voltage is applied. It causes an increase in current and a decrease in resistivity of the diode. This paper presents the development of a neutron sensor based on displacement damage effect. PIN diodes having various structures were made by micro-fabrication process, and neutron beam test was performed to identify neutron damage effect to the diode. From a result of the test, it was shown that the forward voltage drop of the diode, at a constant current, has good linearity for neutron dosage. Also it was found that the newton dosage can be measured by the pin diode neutron dosimeter with constant current power.

• Proceedings of the KIEE Conference
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• 2003.11c
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• pp.789-792
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• 2003

pMOSFET having 10 ${\mu}um$ thickness Gd layer has been tested to be used as a slow neutron sensor. The total thermal neutron cross section for the Gd is 47,000 barns and the cross section value drops rapidly with increasing neutron energy. When slow neutrons are incident to the Gd layer, the conversion electrons are emitted by the neutron absorption process. The conversion electrons generate electron-hole pairs in the $SiO_2$ layer of the pMOSFET. The holes are easily trapped in Oxide and act as positive charge centers in the $SiO_2$ layer. Due to the induced positive charges, the threshold turn-on voltage of the pMOSFET is changed. We have found that the voltage change is proportional to the accumulated slow neutron dose, therefore the pMOSFET having a Gd nuclear reaction layer can be used for a slow neutron dosimeter. The Gd-pMOSFET were tested at HANARO neutron beam port and $^{60}CO$ irradiation facility to investigate slow neutron response and gamma response respectively. Also the pMOSFET without Gd layer were tested at same conditions to compare the characteristics to the Gd-pMOSFET. From the result, we have concluded that the Gd-pMOSFET is very sensitive to the slow neutron and can be used as a slow neutron dosimeter. It can also be used in a mixed radiation field by subtracting the voltage change value of a pMOSFET without Gd from the value of the Gd-pMOSFET.

• Journal of the Korean Society of Radiology
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• v.8 no.7
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• pp.383-387
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• 2014

In this paper, for a new detection system development with the better accurate dose evaluation and beam distribution imaging using the small field irradiation of linear accelerator, the compound semiconductor based detection sensors were fabricated and the performance evaluation was investigated. The special particle-in-binder sedimentation was used for a large area film sensor fabrication. The detection properties for high energy x-rays were investigated from a dark current, an output current, a rising time, a falling time, and response delay measurement. The experimental results, the $TiO_2$ mixed $HgI_2$ sensor showed the best electrical characteristics than $PbI_2$, PbO, pure $HgI_2$. Linearity, repeatability, and accuracy tests from LINAC were tested, the $TiO_2$ mixed $HgI_2$ sensor showed the better performance than the commercially available dosimetry devices.

• Proceedings of the KIEE Conference
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• 1999.11c
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• pp.754-756
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• 1999

In this paper, we have developed a high-sensitivity SNRD(Semiconductor Nuclear Radiation Detector) using silicon PIN photodiode. The SNRD is constructed with silicon PIN photodiode(S3590-05), preamplifier and shaping amplifier. To show the effectiveness of SNRD, nuclear radiation experiments are conducted with $\gamma$-ray Ba-133, Cs-137 and Co-60. The SNRD is different in characteristics of the energy spectrum to scintillation detectors. However, the SNRD have a good linearity on $\gamma$-ray energy and activity. The results of this paper can be applied to electronic personal dosimeter.

• Journal of radiological science and technology
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• v.25 no.2
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• pp.71-75
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• 2002

According to this study, we can make the radiation check meter which have not supply because of high cost and import barrier and lengthen its life by means of repairing of radiation bomb and equipment. We can make better medical service. In my study, I used the photodiod, photoelectron, among semiconductor detectors which have a excellent detect capacity and are low cost and small size. I set up this equipment in June 1, 2002, used 640 mA remote operative fluorography equipment, which make the grade as capacity test. I used the standard measuring instrument which took proofs from a agency, now it was using in measuring agency. The comparative measuring instrument used in same condition. I took the standard which was gauged with a connecting measuring instrument. Using a existing unconnected measuring instrument, I compared the accuracy with new unconnected one. As a result, three score are within the standard. For the detailed analysis, I took the average of percentage average error. So standard instrument was -0.02, comparable was -0.22, and new one was -0.17. New one took a closer measured value with standard than comparable one. In more study, I think to take more accurate value. I expect that my study will be a base of measuring instrument, with low cost, supply of this instrument increase, I expect to decrease radiation bomb and maintain, repair and manager better.

• Progress in Medical Physics
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• v.28 no.4
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• pp.226-231
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• 2017

The aim is to investigate the spectra responsibilities of QD (Quantum Dot) for the innovation of new dosimetry application for therapeutic Megavoltage X-ray range. The unique electrical and optical properties of QD are expected to make it a good sensing material for dosimeter. This study shows the spectra responsibility of toluene based ZnCd QD and PPO (2.5-diphenyloxazol) mixed liquid scintillator. The QDs of 4 sizes corresponding to an emission wavelength (ZnCdSe/ZnS:$440{\pm}5nm$, ZnCdSeS:470, 500, $570{\pm}5nm$) were utilized. A liquid scintillator for control sample was made of toluene, PPO. The Composition of QD loaded scintillators are about 99 wt% Toluene as solvent, 1 wt% of PPO as primary scintillator and 0.05, 0.1, 0.2 and 0.4 wt% of QDs as solute. For the spectra responsibility of QD scintillation, they were irradiated for 30 second with 6 MV beam from a LINAC ($Infinity^{TM}$, Elekta). With the guidance of 1.0 mm core diameter optical fiber, scintillation spectrums were measured by a compact CCD spectrometer which could measure 200~1,000 nm wavelength range (CCS200, Thorlabs). We measured the spectra responsibilities of QD loaded organic liquid scintillators in two scintillation mechanisms. First was the direct transfer and second was using wave shifter. The emission peaks from the direct transfer were measured to be much smaller luminescent intensity than based on the wavelength shift from the PPO to QDs. The emission peak was shifted from PPO emission wavelength 380 nm to each emission wavelength of loaded QD. In both mechanisms, 500 nm QD loaded samples were observed to radiate in the highest luminescence intensity. We observed the spectra responsibility of QD doped toluene based liquid scintillator in order to innovate QD dosimetry applicator. The liquid scintillator loading 0.2 wt% of 500 nm emission wavelength QD has most superior responsibility at 6 MV photon beam. In this study we observed the spectra responsibilities for therapeutic X-ray range. It would be the first step of innovating new radiation dosimetric methods for radiation treatment.

• Journal of the Korean Society of Radiology
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• v.17 no.3
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• pp.433-440
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• 2023

High dose rate brachytherapy is a cancer treatment that intensively irradiates radiation to tumors by inserting isotopes with high dose rates into the body. For such a treatment, it is necessary to deliver an accurate dose to the tumor tissue through an accurate treatment plan while delivering only a minimum dose to the normal tissue. Therefore, it is very important to check the location accuracy of the source through accurate Quality Assurance (QA) in clinical practice. However, since the source position is determined using a ruler, automatic radiographer, video monitor, etc. in clinical practice, it yields inaccurate results. In this study, a semiconductor dosimeter using CsPbI₂Br and CsPbIBr₂ was fabricated. And, in order to analyze whether it is more suitable for the relative QA dosimeter for brachytherapy device among the two materials, the radiation detection ability of each was compared and evaluated. In order to evaluate the radiation detection ability in brachytherapy, the reproducibility and linearity of the two materials were evaluated in ¹⁹²IR. In the reproducibility evaluation, CsPbI₂Br presented a Relative Standard Deviatio(RSD) of 0.98% and CsPbIBr₂ presented an RSD of 3.45%. In the linearity evaluation, the coefficient of determination (R²) of CsPbI₂Br was presented as 0.9998, and the R² of CsPbIBr₂ was presented as 0.9994. As a result of the evaluation, it was found that CsPbI₂Br was more stable in radiation detection while satisfying the evaluation criteria in the dosimeter manufactured in this experiment. Therefore, CsPbI₂Br material is suitable for application as a relative dosimeter for radiation detection in brachytherapy devices.

• Journal of Biomedical Engineering Research
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• v.16 no.2
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• pp.129-138
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• 1995

High-energy and high-dose X-ray and electron beam have been used in radiation therapy after developing particle accelerators. It is recommended to irradiate patients exect real dose for improving therapy effectiveness by International Committee on Radiation Units and Measurement. The radiation detector for daily beam checks of medical accelerators is described. Using thirteen silicon diodes, we have designed the diode detector providing information about calibration, beam symmetry, flatness, stability variation according to radiation damage, time and general quality assurance for both photon and eletron beams. we also compared these measurement values with those of using ionization chamber, film and semiconductor dosimeter.

• Journal of radiological science and technology
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• v.39 no.3
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• pp.407-414
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• 2016

This study is to minimize the patient dose and maintain the image quality according to change of source to image receptor distance and applying additional filter. In this study, we used the DR system, the tissue-equivalent abdomen phantom and the aluminium filter. The exposure conditions were set to 80 kVp using AEC mode. The collimation size was $16{\times}16inch$. The exposure dose were measured 10 times when the SID was changed with 100, 110, 120 and 130 cm, respectively. The pirana 657 for dosimeter was located on center of radiation irradiation. The acquired images were analyzed by using the image J. In the results, the tube current was increased with increasing the SID but ESD was decreased with increasing the SID. The decrease of ESD attribute to use of filter that remove the photon of lower energy. In the histogram results using image J, there were differences between the ESD and the exposure conditions according to change of SID. However, there were not differences in histogram. Therefore, the exposure dose could reduced when set the longer SID. For pediatric exam, the exposure dose could reduced when used the aluminium filter.