• Journal of Radiation Protection and Research
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• v.47 no.3
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• pp.152-157
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• 2022

Background: The hemi-body electron beam irradiation (HBIe^-) technique has been proposed for the treatment of mycosis fungoides. It spares healthy skin using an electron shield. However, shielding electrons is complicated owing to electron scattering effects. In this study, we developed a thimble-like head bolus shield that surrounds the patient's entire head to prevent irradiation of the head during HBIe^-. Materials and Methods: The feasibility of a thimble-like head bolus shield was evaluated using a simplified Geant4 Monte Carlo (MC) simulation. Subsequently, the head bolus was manufactured using a three-dimensional (3D) printed mold and Ecoflex 00-30 silicone. The fabricated head bolus was experimentally validated by measuring the dose to the Rando phantom using a metal-oxide-semiconductor field-effect transistor (MOSFET) detector with clinical configuration of HBIe^-. Results and Discussion: The thimble-like head bolus reduced the electron fluence by 2% compared with that without a shield in the MC simulations. In addition, an improvement in fluence degradation outside the head shield was observed. In the experimental validation using the inhouse-developed bolus shield, this head bolus reduced the electron dose to approximately 2.5% of the prescribed dose. Conclusion: A thimble-like head bolus shield for the HBIe^- technique was developed and validated in this study. This bolus effectively spares healthy skin without underdosage in the region of the target skin in HBIe^-.

• Journal of Sensor Science and Technology
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• v.21 no.6
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• pp.413-419
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• 2012

A dynamic range extension technique is proposed based on a 3-transistor active pixel sensor (APS) with gate/body-tied p-channel metal oxide semiconductor field effect transistor (PMOSFET)-type photodetector using a feedback structure. The new APS consists of a pseudo 3-transistor APS and an additional gate/body-tied PMOSFET-type photodetector, and to extend the dynamic range, an NMOSFET switch is proposed. An additional detector and an NMOSFET switch are integrated into the APS to provide negative feedback. The proposed APS and pseudo 3-transistor APS were designed and fabricated using a $0.35-{\mu}m$ 2-poly 4-metal standard complementary metal oxide semiconductor (CMOS) process. Afterwards, their optical responses were measured and characterized. Although the proposed pixel size increased in comparison with the pseudo 3-transistor APS, the proposed pixel had a significantly extended dynamic range of 98 dB compared to a pseudo 3-transistor APS, which had a dynamic range of 28 dB. We present a proposed pixel that can be switched between two operating modes depending on the transfer gate voltage. The proposed pixel can be switched between two operating modes depending on the transfer gate voltage: normal mode and WDR mode. We also present an imaging system using the proposed APS.

• Proceedings of the KIEE Conference
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• 1994.07b
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• pp.1280-1282
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• 1994

The method of passivation for protecting the $Hg_{l-x}Cd_xTe$ surface is important device fabrication process, because the surface components are highly reactive leading to its chemical and electrical instability. Especially, the material of which composition is x=0.2 or 0.3, is narrow bandgap semiconductor and used as detector of infrared radiation. The device performance of narrow bandgap semiconductors are largely governed by the properties of the semiconductor surface. The electro-chemical processing of $Hg_{l-x}Cd_xTe$ allows rigorous control of the surface chemistry and provides an in-situ monitor of surface reaction. So electro-chemical reduction at specific potential can selectively eliminate the undesirable species on the surface and manipulated to reproducibly attain the desired stoichiometry. This method shows to assess the quality or chemically treated $Hg_{l-x}Cd_xTe$ good surface.

• Korean Journal of Optics and Photonics
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• v.34 no.3
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• pp.106-116
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• 2023

In this paper, we designed a coaxial dual camera incorporating two optical systems-one for the visible rays and the other for far-infrared ones-with the aim of capturing images in both wavelength ranges. The far-infrared system, which uses an uncooled detector, has a sensor array of 640×480 pixels. The visible ray system has 1,945×1,097 pixels. The coaxial dual optical system was designed using a hot mirror beam splitter to minimize heat transfer caused by infrared rays in the visible ray optical system. The optimization process revealed that the final version of the dual camera system reached more than 90% of the fusion performance between two separate images from dual systems. Multiple rigorous testing processes confirmed that the coaxial dual camera we designed demonstrates meaningful design efficiency and improved image conformity degree compared to existing dual cameras.

• Journal of the Korean Society of Radiology
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• v.17 no.7
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• pp.1197-1205
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• 2023

In this study, the spectrum due to radioactivity contained sand samples from famous beaches in the Yeongnam region was measured. The sand samples were from eight famous beaches in Yeongnam region and were placed into a high-purity germanium detector (HPGe) using with an electric field, which is a semiconductor detector and subjected to a precision analysis of the gamma-rays emitted from the radionuclides in the sand by using a multichannel analyzer (MCA). To measure the concentration of the radionuclides, we obtained a spectrum by analyzing the gamma-rays emitted from the radionuclides for a measurement time of 8,000 seconds. As a result of analyzing the spectrum table, Tl-208 had the highest radioactivity at all eight beaches: A, B, C, D, E, F, G, and H. In conclusion, radionuclides detected in sand samples from beaches in the Yeongnam region are natural radionuclides, but they can affect the inside of the human body. Therefore, there is a need for continuous investigation.

• JSTS:Journal of Semiconductor Technology and Science
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• v.13 no.3
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• pp.185-192
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• 2013

In this paper, a clock and data recovery (CDR) circuit that supports triple data rates of 1.62, 2.7, and 5.4 Gbps for DisplayPort 1.2 standard is described. The proposed CDR circuit covers three different operating frequencies with a single VCO switching the operating frequency by the 3-bit digital code. The prototype chip has been designed and verified using a 65 nm CMOS technology. The recovered-clock jitter with the data rates of 1.62/2.7/5.4 Gbps at $2^{31}$-1 PRBS is measured to 7/5.6/4.7 $ps_{rms}$, respectively, while consuming 11 mW from a 1.2 V supply.

• ETRI Journal
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• v.22 no.1
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• pp.38-46
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• 2000

The extraction of model parameters for embedded passive components is crucial for designing and characterizing the performance of multichip module (MCM) substrates. In this paper, a method for optimizing the extraction of these parameters using genetic algorithms is presented. The results of this method are compared with optimization using the Levenberg-Marquardt (LM) algorithm used in the HSPICE circuit modeling tool. A set of integrated resistor structures are fabricated, and their scattering parameters are measured for a range of frequencies from 45 MHz to 5 GHz. Optimal equivalent circuit models for these structures are derived from the s-parameter measurements using each algorithm. Predicted s-parameters for the optimized equivalent circuit are then obtained from HSPICE. The difference between the measured and predicted s-parameters in the frequency range of interest is used as a measure of the accuracy of the two optimization algorithms. It is determined that the LM method is extremely dependent upon the initial starting point of the parameter search and is thus prone to become trapped in local minima. This drawback is alleviated and the accuracy of the parameter values obtained is improved using genetic algorithms.

• Proceedings of the Korean Society of Medical Physics Conference
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• 2002.09a
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• pp.208-210
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• 2002

In a treatment planning for actual patients with a complex internal structure, we often expect that proton beams, which pass through both a bolus and the heterogeneity in body, will form complex dose distributions. Therefore, the accuracy of the calculated dose distributions has to be verified for such a complex object. Then dose distributions formed by proton beams passing through both the bolus and phantoms simulating a clinical heterogeneity in patients were measured using a silicon semiconductor detector. The calculated results by the range-modulated pencil beam algorithm (RMPBA) produced large errors compared with the measured dose distributions since dose calculation using the RMPBA could not predict accurately the edge-scattering effect both in the bolus and in clinical heterogeneous phantoms. On the other hand, in spite of this troublesome heterogeneity, calculated results by the simplified Monte Carlo (SMC) method reproduced the experimental ones well. It is obvious that the dose-calculations by the SMC method will be more useful for application to the treatment planning for proton therapy.

• Journal of Power System Engineering
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• v.12 no.6
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• pp.70-77
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• 2008

The purpose of this study is to compare the quality of digital radiography image with that of classical film images for welded structure in power plants. The CMOS(Complementary Metal Oxide Semiconductor) flat panel detecter and Agfa D5 film are used to image flaw specimens respectively. In the test, CMOS flat panel detector has been determined to have a better image than that of film image. In the IQI(Image Quality Indicator) transmission test, one or two more line can be seen in digital image than in film image. Digital Radiography Test enabled to successfully detect all defects on the weld specimens fabricated with real reheat stem pipe and boiler tube as well. In the specific comparison test, Digital radiography test detected micro flaws in the size of 0.5 mm in length by 0.5 mm in depth. However, film test has limited it to 1.0 mm in length by 1.0 mm in depth. As a result of this study, digital radiography technology is estimated well enough to perform the inspection in the industry with far more cost effective way, compared to the classical film test.

• Proceedings of the International Microelectronics And Packaging Society Conference
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• 2000.04a
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• pp.29-33
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• 2000

MEMS, Micro Electro-Mechanical Systems, present one of the greatest advanced packaging challenges of the next decade. Historically hybrid technology, generally thick film, provided sensors and actuators while integrated circuit technologies provided the microelectronics for interpretation and control of the sensor input and actuator output. Brought together in MEMS these technical fields create new opportunities for miniaturization and performance. Integrated circuit processing technologies combined with hybrid design systems yield innovative sensors and actuators for a variety of applications from single crystal silicon wafers. MEMS packages, far more simple in principle than today's electronic packages, provide only physical protection to the devices they house. However, they cannot interfere with the function of the devices and often must actually facilitate the performance of the device. For example, a pressure transducer may need to be open to atmospheric pressure on one side of the detector yet protected from contamination and blockage. Similarly, an optical device requires protection from contamination without optical attenuation or distortion being introduced. Despite impediments such as package standardization and complexity, MEMS markets expect to double by 2003 to more than ＄9 billion, largely driven by micro-fluidic applications in the medical arena. Like the semiconductor industry before it. MEMS present many diverse demands on the advanced packaging engineering community. With focused effort, particularly on standards and packaging process efficiency. MEMS may offer the greatest opportunity for technical advancement as well as profitability in advanced packaging in the first decade of the 21st century! This paper explores MEMS packaging opportunities and reviews specific technical challenges to be met.