• 한국정보디스플레이학회:학술대회논문집
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• 2006.08a
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• pp.1154-1157
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• 2006

Organic thin-film transistors (OTFTs) based on a semiconducting polymer have been fabricated using an organic patterning methodology. Laser assisted lift-off (LALO) technique, ablating selectively the hydrophobic layer by an excimer laser, was used for producing a semiconducting polymer channel in the OTFT with high resolution. The selective wettability of a semiconducting polymer, poly (9-9-dioctylfluorene-co-bithiophene) (F8T2), dissolved in a polar solvent was found to define precisely the pattering resolution of the active channel. It is demonstrated that in the F8T2 TFTs fabricated using the LALO technique and is applicable for the larger area display.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.11a
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• pp.441-444
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• 2000

In this paper, dielectric properties of XLPE sheets of 22kV cable with semiconducting and water were investigated. The breakdown strength of XLPE under rod/needle electrode were measured at without oil. It is found that the dielectric properties such tan$\delta$ of XLPE sheet dependence on semiconducting and water layer and are decreased much lower increase with temperature. The breakdown strength and the electrode effect are obtained as a function of thickness, and a equation for the sheet thickness dependent breakdown strength is also discussion.

• Journal of Magnetics
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• v.13 no.3
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• pp.92-96
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• 2008

There are few reports of high frequency loss behavior in the near-field for magnetic films with semiconducting properties, even though semiconducting magnetic materials, such as soft magnetic amorphous alloys and nanocrystalline thin films, have been demonstrated. The electromagnetic loss behavior of multilayer magnetic films with semiconducting properties on the microstrip line in quasi-microwave frequency band was analyzed numerically using a commercial finite-element based electromagnetic solver. The large increase in the absorption performance and broadband characteristics of the semiconducting/insulating layer magnetic films examined in this study were attributed to an increase in the loss factor of resistive loss. The electromagnetic reflection increased significantly with increasing conductivity, and the loss power deteriorated significantly. The numerical results of the magnetic field distribution showed that a strong radiated signal on the microstrip line was emitted with increasing conductivity and decreasing film thickness due to re-reflection of the radiated wave from the surface of the magnetic film, even though the emitted levels varied with film thickness.

• Proceedings of the KIEE Conference
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• 1998.07d
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• pp.1475-1477
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• 1998

In this paper, breakdown strength and time to breakdown are experimented under semiconducting layer/needle electrode in XLPE which is used for power cable insulator. Shape and scale parameters of obtained data are estimated using 2-parameters Weibull distribution. Life-time coefficient(n-value) using shape parameters for breakdown strength and time to breakdown tests is estimated. n-value of 1000 hour aged XLPE showed higher value than that of virgin XLPE. Increase of n-value is estimated by the stability due to removal of by-product and residue gas in XLPE by heating.

• Proceedings of the KIEE Conference
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• 2000.11c
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• pp.491-493
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• 2000

The performance of insulate materials gets worse with stress time in power system and because this causes lowering of function and accidents in equipment, development and performance improvement of excellent insulate materials are needed to make stable system. In this paper, to study the influence of degradation in XLPE, inner semiconducting layer and outer semiconducting layer, we studied dielectric characteristics at temperature $25{\sim}100[^{\circ}C]$ and frequency $20{\sim}1[MHz]$ and volume resistivity at temperature $25{\sim}100^{\circ}C$, voltage.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.11a
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• pp.73-76
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• 2000

The performance of insulate materials gets worse with stress time in power system and because this causes lowering of function and accidents in equipment,development and performance improvement of excellent insulate materials are needed to make stable system. In this paper, to study the influence of degradation in XLPE, inner semiconducting layer and outer semiconducting layer, we studied dielectric characteristics at temperature 25∼100[$^{\circ}C$] and frequency 20∼ 1 [MHz]

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.318-318
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• 2010

We present the effect of interlayers of polymer tandem solar cells on their photovoltaic performance. P-type and n-type interlayers are essential for the series-connection of the subcells and enable to form the tandem cell architecture by the solution processing. In this study, we use PEDOT:PSS, nanocrystalline $TiO_2$, and blends of semiconducting polymers and fullerene derivatives as a hole transporting layer, electron transporting layer, and photoactive layers, respectively. We show that photovoltaic performances of polymer tandem solar cells depending on various PEDOT:PSS layers with the different electric conductivity and the various $TiO_2$ layer thickness.

• Proceedings of the Korean Vacuum Society Conference
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• 2008.02a
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• pp.251-251
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• 2008

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11b
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• pp.230-233
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• 2001

FeSi2/Si Layer were grown using FeSi2, Si wafer by the chemical transport reactio nmethod. The directoptical energy gap was found to be 0.871eV at 300 K. The Hall effect is a physical effect arising in matter carrying electric current inthe presence of a magnetic field. The effect is named after the American physicist E. H. Hall, who discovered it in 1879. IN this paper, we study electrical properties of FeSi2/Si layer. And then we measured Hall coefficient Hall mobility, carrier density and Hall voltage according to variation magnetic field and temperature, Because of important part for it applicationVarious phase of silicide is formed at the metal-Si interface when transition metal contacts to Si. Silicides belong to metallic or semiconducting according to their electrical and optical properties. Metallic silicides are used as gate electrodes or interconnections in VLSI devices. Semiconducting silicides can be used as a new material for IR detectors because of their narrow energy band gap.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11b
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• pp.234-237
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• 2001

FeSi2/Si Layer were grown using FeSi2, Si wafer by the chemical transport reactio nmethod. The directoptical energy gap was found to be 0.871eV at 300 K. The Hall effect is a physical effect arising in matter carrying electric current inthe presence of a magnetic field. The effect is named after the American physicist E. H. Hall, who discovered it in 1879. IN this paper, we study electrical properties of FeSi2/Si layer. And then we measured Hall coefficient Hall mobility,carrier density and Hall voltage according to variation magnetic field and temperature, Because of important part for it applicationVarious phase of silicide is formed at the metal-Si interface when transition metal contacts to Si. Silicides belong to metallic or semiconducting according to their electrical and optical properties. Metallic silicides are used as gate electrodes or interconnections in VLSI devices. Semiconducting silicides can be used as a new material for IR detectors because of their narrow energy band gap.