• Bulletin of the Korean Chemical Society
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• v.34 no.4
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• pp.1170-1174
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• 2013

Benzodithiophene based organic semiconducting polymer was designed and synthesized by stille coupling reaction. The structure of polymer was confirmed by NMR and IR. The weight average molecular weight ($M_w$) of polymer was 8,400 using GPC with polydispersity index of 1.4. The thermal, optical and electrochemical properties of polymer were characterized by TGA and DSC, UV-vis absorption and cyclic voltammetry. OTFT device using PBDT-10 exhibited the mobility of $7.2{\times}10^{-5}\;cm^2\;V^{-1}\;s^{-1}$ and $I_{on}/I_{off}$ of $2.41{\times}10^3$. The film morphology and crystallinity of PBDT-10, was studied using AFM and XRD.

• Journal of the Korean Ceramic Society
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• v.54 no.6
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• pp.535-538
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• 2017

Here we report the tunable electrical properties and chemical sensor of single-walled carbon nanotubes (SWCNTs) network-based devices with a functionalization technique. Formation of highly aligned SWCNT structures is made on $SiO_2/Si$ substrates using a template-based fluidic assembly process. We present a Platinum (Pt)-nanocluster decoration technique that reduces the resistivity of SWCNT network-based devices. This indicates the conversion of the semiconducting SWCNTs into metallic ones. In addition, we present the Hydrogen Sulfide ($H_2S$) gas detection by a redox reaction based on SWCNT networks functionalized with 2,2,6,6-Tetramethylpiperidine-1-oxyl (TEMPO) as a catalyst. We summarize current changes of devices resulting from the redox reactions in the presence of $H_2S$. The semiconducting (s)-SWCNT device functionalized with TEMPO shows high gas response of 420% at 60% humidity level compared to 140% gas response without TEMPO functionalization, which is about 3 times higher than bare s-SWCNT sensor at the same RH. These results reflect promising perspectives for real-time monitoring of $H_2S$ gases with high gas response and low power consumption.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.26 no.1
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• pp.49-55
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• 2013

In this paper, semiconducting shield specimens for a DC cable os fabricated and characterized by measurement of volume resistance, tensile strength, and the coefficient of expansion to show the electrical and mechanical characteristics of the semiconducting shield. Due to the PTC phenomenon, the volume resistance at $25^{\circ}C$ increases rapidly in comparison to the volume resistance at $90^{\circ}C$. Since the compounding ration of carbon black is low, the tensile strength and density become lower and the coefficient of expansion is increased. As the general specification of the tensile strength and density is $0.8kgf/mm^2$ and 150%, respectively, the fabricated specimen in this paper has excellent mechanical characteristic.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.55 no.12
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• pp.570-575
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• 2006

In this paper, we have investigated thermal properties by changing the content of carbon nanotube, which is component part of semiconductive shield in underground power transmission cable. Heat capacity (${\Delta}H$), glass transition temperature (Tg) and melting temperature (Tm) were measured with the samples of eight, through DSC (Differential Scanning Calorimetry), and the measurement ranges of temperature selected from $-100[^{\circ}C]\;to\;100[^{\circ}C]$ with heating temperature selected per $4[^{\circ}C/min]$ Also, high temperature, heat degradation initiation temperature, and heat weight loss were measured by TGA (Thermogravimetric Analysis) in the temperature from $0[^{\circ}C]\;to\;700[^{\circ}C]$ with rising temperature of $10[^{\circ}C/min]$. As a result, the Glass transition temperatures of the sample were showed near $-20[^{\circ}C]{\sim}25[^{\circ}C]$, and the heat capacity and melting temperature from the DSC was increased according to increasing the content of carbon nanotube, while, thermal diffusivity was increased according to increasing the content of carbon nanotube. Also, heat degradation initiation temperature from the TGA results was increasing according to increasing the content of carbon nanotube with CNT/EEA. Therefore, heat stabilities of EVA, which contained the we VA (vinyl acetate), showed the lowest.

• Journal of the Korean Ceramic Society
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• v.32 no.5
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• pp.567-574
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• 1995

The effect of MnO2 addition to 0.1mol% Sb2O3-doped BaTiO3 ceramics on microstructure and PTCR characteristics was studied. The PTCR characteristics was observed when 0.01 and 0.02 wt% MnO2 were added and sintered at 132$0^{\circ}C$ for 1 hour. The characteristics can be explained by the changes in the number and size of the abnormal grain growth due to the liquid phase during sintering. when the amount of MnO2 addition was 0.03 wt%, the sample showed NTCR characteristics with room-temperature resistivity over 109 Ωm regardless of the sintering temperature. This behavior can be described by the microstructure change due to the abnormal grain growth and charge compensation effect by MnO2 added. The room-temperature resistivity was increased as the amount of MnO2 was increased. And the specific resistivity ratio (pmax/pmin) showed maximum at 0.02wt% MnO2.

• Journal of the Korean Ceramic Society
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• v.37 no.7
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• pp.632-637
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• 2000

Thermoelectric conversion properties of commercial Fe-Si2 and Fe-Si alloy ingots prepared by RF inductive furnace were investigated. As sintering temperature increased, density of the specimen increased and the phase transformation from metallic phases ($\varepsilon$-FeSi, ${\alpha}$-Fe2Si5) to semiconducting phase (${\beta}$-FeSi2) occurred more effectively. The FeSi phase was detected even after 100hrs of annealing treatment. For the Fesi1.95∼FeSi2.05 specimens prepared by RF inductive furnace, the thermoelectric property improved as the composition of the specimen approached to stoichiometric composition FeSi2. Electrical conductivity of the specimen increased with increasing temperatures showing typical semiconducting behavior. From the electrical conductivity measurements, activation energy in the intrinsic region (above about 700 K) was calculated to be approximately 0.46 eV. In spite of non-doping, the Seebeck coefficient for every specimen exhibited p-type conduction due to Si deficiency. Its maximum value was located at about 475 K, and then decreased abruptly with increasing temperatures. The power factor was governed by the Seebeck coefficient of the specimen more significantly than by electrical conductivity.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11a
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• pp.234-237
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• 2001

FeSi$_2$/Si Layer were grown using FeSi$_2$, Si wafer by the chemical transport reaction method. The directoptical energy gap was found to be 0.871ev at 300 K. The Hall effect is a physical effect arising in matter carrying electric current in the presence of a magnetic field. The effect is named after the American physicist E. H. Hall, who discovered it in 1879. In this paper, we study electrical properties of FeSi$_2$/Si layer And then we measured Hall coefficient Hall mobility, carrier density and Hall voltage according to variation magnetic field and temperature, Because of important Part for it application Various phase of silicide is formed at the metal-Si interface when transition metal contacts to Si. Silicides belong to metallic or semiconducting according to their electrical and optical properties. Metallic silicides are used as gate electrodes or interconnections in VLSI devices. Semiconducting silicides can be used as a new material for IR detectors because of their narrow energy band gap.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11a
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• pp.230-233
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• 2001

FeSi$_2$ Layer were grown using FeSi$_2$, Si wafer by the chemical transport reaction method. The directoptical energy gap was found to be 0.87leV at 300 K. The Hall effect is a Physical effect arising in matter carrying electric current in the presence of a magnetic field. The effect is named after the American physicist E.H. Hall, who discovered it in 1879. In this paper, we study electrical properties of FeSi$_2$/Si layer. And then we measured Hall coefficient Hall mobility, carrier density and Hall voltage according to variation magnetic field and temperature, Because of important part for it application various phase of silicide is formed at the metal-Si interface when transition metal contacts to Si. Silicides belong to metallic or semiconducting according to their electrical and optical properties. Metallic silicides are used as gate electrodes or interconnections in VLSI devices. Semiconducting silicides can be used as a new material for IR detectors because of their narrow energy band gap.

• Proceedings of the KIEE Conference
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• 2005.07c
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• pp.2022-2024
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• 2005

Electrical double-layer capacitor (EDLC) is an electrochemical energy storage device in which electric charges only accumulated by a pure electrostatic attraction force are stored on the electrolyte-electrode interface in a form of double layer and separated by the electrolyte. The composite was prepared by mixing nanosize $TiO_2$ and activated carbon through a means of ultrasonic vibration in ethanol solution for 30 min in various mass ratios of $AC:TiO_2$ to form activated carbone-semiconducting oxide composites. Either 1.0 M $LiClO_4/EC-DEC$ or $Et_4NBF_4$/EC-DEC was used as the electrolyte. It was found that with modification of $TiO_2$, the specific capacitance of activated carbon measured at $1mA/cm^2$ was increased from 40 to 50 F/g. This method is unique in comparison the conventional method because it uses semiconducting TiO2 other than electrochemically active materials such as $RuO_2$. The increase in specific capacitance could be attributed to the decrease in electric polarization, caused by the introduction of $RuO_2$.

• Journal of Electrical Engineering and Technology
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• v.8 no.4
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• pp.832-839
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• 2013

This paper describes the simulation and experiment for partial discharge (PD) pulse propagation in 22.9kV CNCV power cables. To investigate the propagation characteristics of PD, experiments are carried out by injecting the PD pulse in 100m-long 60 $mm^2$ CNCV cable in the laboratory. The characteristics of PD are also simulated using EMTP to investigate and analyze PD in the same cable. By comparing the simulation and test results, parameter permittivity is recalculated by considering semiconducting screen in the process of simulation and analysis of PD. After it is proved that simulation results and test results are almost similar in the laboratory, extensive simulations are performed to analyse various PD characteristics such as propagation velocity, attenuation, etc. in 60 $mm^2$ and 325 $mm^2$ CNCV cables. Authors are confident that results obtained in this paper will be used as important technical materials to detect and investigate PD generated in transmission and distribution power cables.