• Carbon letters
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• v.28
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• pp.60-65
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• 2018

Linear carbon chains (LCCs) encapsulated inside the hollow cores of carbon nanotubes (CNTs) have been experimentally synthesized and structurally characterized by Raman spectroscopy and transmission electron microscopy. However, in terms of electronic conductivity, their transportation mechanism has not been investigated theoretically or experimentally. In this study, the density of states and quantum conductance spectra were simulated through density functional theory combined with the non-equilibrium Green function method. The encapsulated LCCs inside (5,5), (6,4), and (9,0) single-walled carbon nanotubes (SWCNTs) exhibited a drastic change from metallic to semiconducting or from semiconducting to metallic due to the strong charge transfer between them. On the other hand, the electronic change in the conductance value of LCCs encapsulated inside the (7,4) SWCNT were in good agreement with the superposition of the individual SWCNTs and the isolated LCCs owing to the weak charge transfer.

• Journal of the Korean Ceramic Society
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• v.33 no.12
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• pp.1301-1310
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• 1996

Generally it requires high sintering temperatures more than 135$0^{\circ}C$ to make semiconductive BaTiO3 ceramics. Also it is very difficult to achieve a homogeneous mixing in solid-state reaction method. Therefore the liquid phase distributed to non-uniform dilute the characteristics of PTCR. In order to improve the uniformity this study is used the sol-gel coating method. Using this method we studied the new manufacturing process that had a high reproducibility and mass production capability. Tetraethyl orthosilicate (TEOS) was used as a source of Si. The semiconductive BaTiO3 ceramics which was produced by sol-gel method for the SiO2 addition and sintered between 124$0^{\circ}C$ and 130$0^{\circ}C$ showed almost same resistivity at room temperature among 125$0^{\circ}C$ and 130$0^{\circ}C$. As the results We could be sintered the semiconducting BaTiO3 ceramics at lower temperature even at 125$0^{\circ}C$ maintaining the same specific resistivity ratio ($\rho$max/$\rho$min) at 130$0^{\circ}C$. The specific resistivity both below and above the Curie temperature were increased by slow cooling and the steepness of the plots in the reasion of transition from low to high resistance increased as the cooling rate decreased.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.26 no.2
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• pp.119-125
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• 2013

In this paper, semiconducting shield specimens for a DC cable is fabricated and characterized by measurement of volume resistance, tensile strength, and the coefficient of expansion to show the electrical and mechanical characteristics of the semiconducting shield. Due to the PTC phenomenon, the volume resistance at $25^{\circ}C$ increases rapidly in comparison to the volume resistance at $90^{\circ}C$. Since the compounding ratio of carbon black is low, the tensile strength and density become lower and the coefficient of expansion is increased. As the general specification of the tensile strength and density is $0.8kgf/mm^2$ and 150%, respectively, the fabricated specimen in this paper has excellent mechanical characteristic.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11b
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• pp.230-233
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• 2001

FeSi2/Si Layer were grown using FeSi2, Si wafer by the chemical transport reactio nmethod. The directoptical energy gap was found to be 0.871eV at 300 K. The Hall effect is a physical effect arising in matter carrying electric current inthe presence of a magnetic field. The effect is named after the American physicist E. H. Hall, who discovered it in 1879. IN this paper, we study electrical properties of FeSi2/Si layer. And then we measured Hall coefficient Hall mobility, carrier density and Hall voltage according to variation magnetic field and temperature, Because of important part for it applicationVarious phase of silicide is formed at the metal-Si interface when transition metal contacts to Si. Silicides belong to metallic or semiconducting according to their electrical and optical properties. Metallic silicides are used as gate electrodes or interconnections in VLSI devices. Semiconducting silicides can be used as a new material for IR detectors because of their narrow energy band gap.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11b
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• pp.234-237
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• 2001

FeSi2/Si Layer were grown using FeSi2, Si wafer by the chemical transport reactio nmethod. The directoptical energy gap was found to be 0.871eV at 300 K. The Hall effect is a physical effect arising in matter carrying electric current inthe presence of a magnetic field. The effect is named after the American physicist E. H. Hall, who discovered it in 1879. IN this paper, we study electrical properties of FeSi2/Si layer. And then we measured Hall coefficient Hall mobility,carrier density and Hall voltage according to variation magnetic field and temperature, Because of important part for it applicationVarious phase of silicide is formed at the metal-Si interface when transition metal contacts to Si. Silicides belong to metallic or semiconducting according to their electrical and optical properties. Metallic silicides are used as gate electrodes or interconnections in VLSI devices. Semiconducting silicides can be used as a new material for IR detectors because of their narrow energy band gap.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.11a
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• pp.140-141
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• 2005

To measure elastic properties of semiconducting materials in power cable, we have investigated modulus of EVA/acetylene black composite showed by changing the content of acetylene black. The specimen was primarily kneaded in material samples of pellet form for 5 minutes on rollers ranging between 70[$^{\circ}C$] and 100[$^{\circ}C$]. Then this was produced as sheets after pressing for 20 minutes at 180[$^{\circ}C$] with a pressure of 200[kg/cm]. The contents of conductive acetylene black were 20, 30 and 40[wt%], respectively. The modulus experiment was measured by DMA 2980. The ranges of measurement temperature were from -50[$^{\circ}C$] to 100[$^{\circ}C$] and measurement frequency is 1[Hz]. The modulus of specimens was increased according to an increment of acetylene black content. And modulus was rapidly decreased at the glass transition temperature. The tan$\delta$ of specimens was decreased according to an increment of acetylene black content.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.11a
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• pp.138-139
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• 2005

To measure electrical properties and viscoelasticity of semiconducting materials in power cable, we have investigated dielectric properties and modulus of EEA/acetylene black composite showed by changing the content of acetylene black. The permittivity from experimental result was increased, while tan6 was decreased by an increment of the content of acetylene black. The modulus of specimens was increased according to a increment of a acetylene black content. And modulus was rapidly decreased at the glass transition temperature. The tan$\delta$ of specimens was decreased according to a increment of a acetylene black content.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.11a
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• pp.136-137
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• 2005

To measure elastic properties of semiconducting materials in power cable, we have investigated modulus of EBA/carbon black composite showed by changing the content of carbon black. The specimen was primarily kneaded in material samples of pellet form for 5 minutes on rollers ranging between 70[$^{\circ}C$] and 100[$^{\circ}C$]. Then this was produced as sheets after pressing for 20 minutes at 180[$^{\circ}C$] with a pressure of 200[kg/cm]. The contents of conductive carbon black were 20, 30 and 40[wt%], respectively. The modulus experiment was measured by DMA 2980. The ranges of measurement temperature were from -50[$^{\circ}C$] to 100[$^{\circ}C$] and measurement frequency is 1 [Hz]. The modulus of specimens was increased according to an increment of carbon black content And modulus was rapidly decreased at the glass transition temperature. The tan$\delta$ of specimens was decreased according to an increment of carbon black content.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.65-65
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• 2011

We report the application of conducting metal oxide electrodes for semiconducting metal oxide gas sensors. Pt interdigitated electrodes have been commonly used for metal oxide gas sensor because of the low resistivity, excellent thermal and chemical stability of Pt. However, the high cost of Pt is an obstacle for the wide use of metal oxide gas sensors compared with its counterpart electrochemical gas sensors. Meanwhile, relatively low-cost conducting metal oxides are widely being used for light-emitting diodes, flat panel displays, solar cell and etc. In this work, we have fabricated $WO_3$ and $SnO_2$ thin film gas sensors using interdigitated electrodes of conducting metal oxides. Thin film gas sensors based on conducting metal oxides exhibited superior gas sensing properties than those using Pt interdigitated electrodes. The result was attributed to the low contact resistance between the conducting metal oxide and the sensing material. Consequently, we demonstrated the feasibility of conducting metal oxide interdigitated electrodes for novel gas sensors.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.05c
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• pp.25-28
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• 2001

The objectives of this paper are to demonstrate the electrical degradation phenomena with Si atom's behaviors in the grainboundary of semiconducting ZnO ceramics. The ZnO ceramic devices used in this investigation were fabricated by standard ceramic techniques. Especially, $SiO_2$ were added to analyze the degradation characteristics with Si and sintered in oxygen ambient at $1300^{\circ}C$. The conditions of DC degradation test were $115{\pm}2^{\circ}C$ for 13h. Using XRD and SEM, the phase and microstructure of samples were analyzed respectively. E-J analysis was used to determine $\alpha$. Frequency analysis was accomplished to understand $R_g$ and $R_b$ at the equivalent circuit. Electrical stability improved as the amount of $SiO_2$ addition increased. This results were explain by the quantitative analysis and the line scanning method of EPMA.