• 한국진공학회:학술대회논문집
• /
• 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
• /
• pp.237.1-237.1
• /
• 2016

Electrical properties of graphene-based field effect transistors (G-FETs) can be degraded in ambient conditions owing to physisorbed oxygen or water molecules on the graphene surface. Passivation technique is one of a fascinating strategy for fabrication of G-FETs, which allows to sustain electrical properties of graphene in the long term without disrupting its inherent properties: transparency, flexibility and thinness. Ironically, despite its importance in producing high performance graphene devices, this method has been much less studied compared to patterning or device fabrication processes. Here we report a novel surface passivation method by using atomically thin self-assembled alkane layers such as C18- NH2, C18-Br and C36 to prevent unintentional doping effects that can suppress the degradation of electrical properties. In each passivated device, we observe a shift in charge neutral point to near zero gate voltage and it maintains the device performance for 1 year. In addition, the fabricated PG-FETs on a plastic substrate with ion-gel gate dielectrics exhibit not only mechanical flexibility but also long-term stability in ambient conditions. Therefore, we believe that these highly transparent and ultra-thin passivation layers can become a promising candidate in a wide range of graphene based electronic applications.

• Nuclear Engineering and Technology
• /
• 제54권7호
• /
• pp.2586-2591
• /
• 2022

In the present work, we have irradiated the DI-BSCCO superconducting tapes with the 100 keV deuterium ions to investigate the effect of ion irradiation on their critical current (Ic). The damage simulations are carried out using the binary collision approximation method to get the spatial distribution and depth profile of the damage events in the high temperature superconducting (HTS) tape. The point defects are formed near the surface of the HTS tape. These point defects change the vortex profile in the superconducting tape. Due to the long-range interaction of vortices with each other, the Ic of the tape degrades at the 77 K and self magnetic field. The radiation dose of 2.90 MGy degrades the 44% critical current of the tape. The results of the displacement per atom (dpa) and dose deposited by the deuterium ions are used to fit an empirical relation for predicting the degradation of the Ic of the tape. We include the dpa, dose and columnar defect terms produced by the incident particles in the empirical relation. The fitted empirical relation predicts that light ion irradiation degrades the Ic in the DI-BSCCO tape at the self field. This empirical relation can also be used in neutron irradiation to predict the lifetime of the DI-BSCCO tape. The change in the Ic of the DI-BSCCO tape due to deuterium irradiation is compared with the other second-generation HTS tape irradiated with energetic radiation.

• 대한전자공학회논문지SD
• /
• 제37권9호
• /
• pp.15-22
• /
• 2000

1.55${\mu}m$ InGaAsP/InGaAsP 다중양자우물주고 전계흡수형 광변조기에서 캐리어 수송현상과 입력광 세기가 소광특성에 미치는 영향을 조사하였다. 포와송 방정식과 전자 및 정공의 전류 연속방정식, 광분포들을 양자우물에서의 전게강도에 따른 흡수계수들을 고러하여 self-consistent하게 해석하였다. 이종접합계면에서의 캐리어의 축적 및 광도파로영역에서의 공간전하에 의한 전계차폐 현상은 입사광 파워가 증가할 수록 입사단 영역에서 심하게 나타남을 알 수 있었다. 캐리어의 전계차폐에 의한 소광비 저감은 변조기가 길이가 200${\mu}m$정도로 긴 경우에는 입사광 파워가 약 10mW이상에 대해서 심하게 나타날 수 있음을 알 수 있었다. 이러한 캐리어의 전계차폐에 따른 소광비 특성열화는 특히 입사광 파워가 클 수 있는 1..55${\mu}m$ DFB-LD와 전계흡수형 광변조기 집적소자나 광변조기 길이가 수십 ${\mu}m$로 짧은 초고속 광흡수변조기의 경우에 더욱 심하게 나타날 수 있음을 지적하였다.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2009년도 춘계학술대회 논문집
• /
• pp.9-9
• /
• 2009

Coated conductor is required to have good critical current property for high efficiency of electric power applications. Until now, long coated conductor does not show high Jc over 3 MA/$cm^2$ in thick superconducting layer because of texture degradation by thick superconducting layer. In this study, in order to overcome this issue, thicker superconducting layer was deposited with optimized conditions to reduce the degradation of critical current density. SmBCO superconducting coated conductor was deposited with 1~3 um of thickness at $750\sim850^{\circ}C$ under 15~20 mTorr of oxygen partial pressure using batch type EDDC( evaporation using drum in dual chamber). The buffered substrate for superconducting layer deposition was used IBAD-MgO template with the architecture of $LaMnO_3/MgO/Y_2O_3/Al_2O_3$/Hastelloy. After fabrication of coated conductor, critical current was measured by 4-prove method under self-magnetic field and 77K. In addition, surface morphology and texture were analyzed by SEM and XRD, respectively. 3 um thick SmBCO coated conductor shows highest $I_C$ values of 638A/cm-w in 1 m long in the world.

• Transactions on Electrical and Electronic Materials
• /
• 제17권5호
• /
• pp.239-251
• /
• 2016

The potential of nanocomposites have been drawing the intention of the researchers from energy storage to electrical insulation applications. Nanocomposites are known to improve dielectric properties, such as the increase in dielectric breakdown strength, suppressing the partial discharge (PD) as well as space charge, and prolonging the treeing, etc. In this review, different theories have been established to explain the reactions at the interaction zone of polymer matrix and nanofiller; the characterization methods of nanocomposites are also presented. Furthermore, the remarkable findings in the fields of epoxy, cross-linked polyethylene (XLPE), polypropylene and polyvinyl chloride (PVC) nanocomposites are reviewed. In this study, it was observed that there is lack of comparison between results of lab scale specimens and actual field aged cables. Also, non-standardization of the preparation methods and processing parameters lead to changes in the polymer structure and its surface degradation. However, on the positive side, recent attempt of 250 kV XLPE nanocomposite HVDC cables in service may deliver a promising performance in the coming years. Moreover, materials such as self-healing polymer nanocomposites may emerge as substitutes to traditional insulations.

• 한국초전도ㆍ저온공학회논문지
• /
• 제24권1호
• /
• pp.13-17
• /
• 2022

The mechanical properties of REBCO coated conductor (CC) tapes under uniaxial tension are mainly determined by the thick layer Components like the substrate and the stabilizer. Depending on the applications of the CC tapes, it is also needed to externally reinforce thin metallic foils to one side or both sides of the CC tapes. This study investigated the effect of additional stabilizer layers or lamination on the electrical resistivity and electromechanical properties in RCE-DR processed GdBCO CC tapes with different structures. The strain/stress tolerance of I_c in differently processed 12 mm-wide REBCO CC tapes under uniaxial tension at 77 K and self-field could be determined by the loading-unloading scheme. As a result, Sn-Cu stabilized CC tape showed a significant decrease in mechanical properties due to its soft but thick stabilizing layer. However, similar electromechanical properties have been observed on both Sn-Cu and Sn-stabilized CC tapes, the I_c degradation behavior was independent of whether the CC tape has an external reinforcement or different stabilizing layers.

• 한국초전도ㆍ저온공학회논문지
• /
• 제24권4호
• /
• pp.16-24
• /
• 2022

Applications of REBa₂Cu₃O_7-δ tapes require joints with a simple manufacturing process, low resistance and good mechanical properties. In the present study, we successfully developed a copper diffusion joint between Cu-stabilized REBa₂Cu₃O_7-δ tapes that meets the above requirements without solder simply by applying flux, heat and pressurization. After a 3 min thermocompression process at approximately 150 δ and 336 MPa in air, two tapes were directly connected between Cu stabilizers by copper diffusion, which was proven by microstructure analysis. The specific resistivity of the copper diffusion joint reached 5.8 nΩ·cm² (resistance of 0.4 nΩ for a 306 mm splicing length) at 77 K in the self-field. The axial tensile stress reached 200 N without critical current degradation. The results show promise for the preparation of copper diffusion joints to be used in coils, attached tapes, and wire/cable terminals.

• 전자공학회논문지
• /
• 제49권12호
• /
• pp.156-163
• /
• 2012

최근 들어 정보은닉기술에 대한 필요성이 많이 증가되고 있으며 국제치안, 군사 그리고 의료영상 등의 분야에서 그 예를 많이 볼 수 있다. 본 논문에서는 한 픽셀의 다수 MSB(MSBs: Most Significant Bits)의 Parity Bit를 이용하여 gray영상에 대해 정보를 은닉하는 방법을 제안한다. 스테가노그라피(Steganography) 분야에서 많은 연구들이 LSB 대체(Substitution), XOR연산을 채용하여 연구되어왔으며 궁극적인 목적은 낮은 복잡도와 높은 은닉용량, 동시에 화질의 저하를 최소화하는 것이다. 하지만 LSB 대체 방법은 높은 은닉용량을 가짐에도 불구하고 너무나 간단한 작업으로 인해 안전하지 못하다. 또한 XOR연산을 이용한 방법들은 픽셀 수 대비 약 75%의 은닉률을 달성하였다. 제안된 방법에서 각 픽셀의 LSB(Least Significant Bit)는 비밀메시지 1비트와 해당 픽셀의 7 MSBs의 Parity Bit와 XOR 연산된다. 제안한 방법은 대칭키 프로토콜의 개념을 스테가노그라피에 적용한 것이며 대칭키를 자기참조에 의해 생성하도록 하였다. 제시한 방법은 기존의 XOR방법들에 비해 은닉률이 25% 높으며 원본 대비 픽셀의 LSB 반전률이 약 6%정도 개선되는 효과를 보였다.

• 한국지반신소재학회논문집
• /
• 제8권4호
• /
• pp.9-17
• /
• 2009

본 연구는 폐기물 매립지에서 폐기물의 분해 등으로 인해 부등침하가 발생할 경우 SRSL(Self Recovering Sustainable Liner)를 활용한 매립지 최종복토층의 안정성에 미치는 영향을 확인해보는 것을 목적으로 한다. FLAC(Fast Lagrangian Analysis of Continua) 2D 프로그램을 이용하여 폐기물 분해 양상을 빈칸(blank)으로 설정한 후 수치해석을 수행하였으며, 기본 물성치시험 및 문헌조사 등을 통해 각 층에 대한 구성성분의 변수를 산정하였다. 이전 현장투수시험 등을 통해 얻어진 파괴 시 안전균열폭(6mm)을 바탕으로 부등침하 발생 시 부등침하의 폭, 깊이, 개수별 매립지 최종복토층의 침하량을 산정하여 부등침하에 대한 구조적 안정성을 검토하였다. 해석결과, 깊이에 따른 영향은 없으며, 침하갯수가 증가할수록 오히려 매립지 최종복토층에 인장력을 발휘하여 안정성 확보를 유리하게 하며, 부등침하의 폭이 전체길이에 24.5% 이내일 경우 안정성에는 문제가 없는 것을 확인하였다.

• 한국전기전자재료학회논문지
• /
• 제31권3호
• /
• pp.141-145
• /
• 2018

Ni-InGaAs shows promise as a self-aligned S/D (source/drain) alloy for n-InGaAs MOSFETs (metal-oxide-semiconductor field-effect transistors). However, limited thermal stability and instability of the microstructural morphology of Ni-InGaAs could limit the device performance. The in situ deposition of a Pd interlayer beneath the Ni layer was proposed as a strategy to improve the thermal stability of Ni-InGaAs. The Ni-InGaAs alloy layer prepared with the Pd interlayer showed better surface roughness and thermal stability after furnace annealing at $570^{\circ}C$ for 30 min, while the Ni-InGaAs without the Pd interlayer showed degradation above $500^{\circ}C$. The Pd/Ni/TiN structure offers a promising route to thermally immune Ni-InGaAs with applications in future n-InGaAs MOSFET technologies.