• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 하계학술대회 논문집 Vol.5 No.1
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• pp.401-404
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• 2004

광학 현미경을 이용한 포토리소그래피 방법을 통해 단일 나노선에 선택적 전극을 형성하였다. $SiO_2$ 기판에 나노선을 도포하여 사용하였고 수 마이크로미터 길이의 단일 나노선에 2단자 전극을 형성하는데 충분한 resolution을 얻을 수 있었다. 리소그래피 노광 광원으로는 현미경에 내장된 할로겐 램프를 사용하였고, 동일 광원으로 관측하기 위해 광학 필터를 사용하였다. 실험 상황에 따라 금속, OHP 필름, 종이 등의 재질로 다양한 마스크를 제작하여 사용하였다. 대물렌즈의 교환을 통해 다양한 projection 배율을 구현하였다.

• 한국표면공학회지
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• 제56권2호
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• pp.115-124
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• 2023

Anodization is an electrochemical process that electrochemically converts a metal surface into an oxide layer, resulting in enhanced corrosion resistance, wear resistance, and improved aesthetic appearance. Local anodization, also known as selective anodization, is a modified process that enables specific regions or patterns on the metal surface to undergo anodization instead of the entire surface. Several methods have been attempted to produce oxide layers via localized anodic oxidation, such as using a mask or pre-patterned substrate. However, these methods are often intricate, time-consuming, and costly. Conversely, the direct writing or patterning approach is a more straightforward and efficient way to fabricate the oxide layers. This review paper intends to enhance our comprehension of local anodization and its potential applications in various fields, including the development of nanotechnologies. The application of anodization is promising in surface engineering, where the anodic oxide layer serves as a protective coating for metals or modifies the surface properties of materials. Furthermore, anodic oxidation can create micro- and nano-scale patterns on metal surfaces. Overall, the development of efficient and cost-effective anodic oxidation methods is essential for the advancement of various industries and technologies.

• 한국수정란이식학회:학술대회논문집
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• 한국수정란이식학회 2002년도 국제심포지엄
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• pp.118-118
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• 2002

Programmed cell death (PCD) is thought as a well-controlled process by which unwanted cells are selectively eliminated. During the last decade many researches have elucidated molecules and their interactions involved in cell death by using largely in vitro induction of cell death or survival signals in a more defined manner, While these critical information and novel findings provide us with clearer understanding of mechanisms underlying cell death, it does by no means explain how PCD occurs and which cells or tissues are affected during normal embryonic development in vivo. In this study, we used zebrafish to examine whether the PCD is occurring selectively or randomly in developing embryos by whole mount in situ TUNEL analysis with specific markers for neural cells. The result revealed that the degree and distribution of TUNEL staining varied considerably throughout gastrulation stage, and there was also a number of TUNEL-negative embryos. Most of TUNEL-positive cells were scattered randomly throughout the blastoderm. During the gastrulation stage about 75 % of the embryos analyzed exhibited more than 5 TUNEL-positive cells. As the dorsal epiblast begins to thicken rather abruptly near the end of gastrulation, TUNEL-positive cells were mainly located along the dorsal side. Although there were some variations in TUNEL staining during segmentation and pharyngeal stages, TUNEL staining continued to be localized to the central nervous system, and was also detected in the sensory organs, trigeminal ganglions, and the primary sensory neurons. High levels of the cell death in developing brain between 20-somite and prim-6 stages are thought to play a role in the morphogenesis and organization of the brain. At prim-16 stage, cell death is considerably reduced in the brain region. Dying cells are mainly localized to the prospective brain region where ectodermal cells are about to initiate neurogenesis. As development progressed, high levels and more reproducible patterns of cell death were observed in the developing nervous system. Intensive TUNEL staining was restricted to the trigeminal ganglions, the primary sensory neurons, and sensory organs, such as olfactory pits and otic vesicles. Thus, PCD patterning in zebrafish embryos occurs randomly at early stages and becomes restricted to certain region of the embryos. The spatio-temporal pattern of PCD during the early embryonic development in zebrafish will provide basic information for further studies to elucidate genes involved in. regulation of PCD largely unknown in vivo during vertebrate embryogenesis.

• 한국진공학회지
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• 제19권2호
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• pp.81-90
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• 2010

층과 층 사이의 정전기적인력, 수소결합 또는 공유결합을 이용하여 층당 두께를 수 옹스트롱에서부터 수십 나노미터까지 제조할 수 있으며 박막의 표면 형태를 흡착시키고자 하는 물질 및 박막 후처리 공정을 통해 제어할 수 있으며 더 나아가, 삽입하는 물질의 특성에 따라 박막의 기능성을 집적화 및 다양화시킬 수 있다. 본 연구에서는 이러한 층상자기조립방법의 특성을 이용하여 반사방지막, 초소수성 필름 및 전기화학센서로의 응용가능성을 제시하였다. 반사방지막의 경우, 구형의 블록공중합체를 유리기판 위에 다층박막으로 적층시킴으로써 박막 굴절률을 1.25까지 감소시켰고 이를 통해 약 99.5%의 빛 투과도를 달성할 수 있었다. 더 나아가 바이오물질인 엔자임을 다층박막에 삽입시킬 경우, 활성 산소를 분해시키는 전기화학센서로의 제조가 가능함을 보인다. 본 연구는 본인이 이미 발표한 논문(J. Am. Chem. Soc. 128, 9935 (2006); Adv. Mater. 19, 4364 (2007); Electro. Mater. Lett. 3, 163 (2007))들을 정리하여 층상자기조립법에 관해 소개하는 논문이다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2000년도 제18회 학술발표회 논문개요집
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• pp.77-77
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• 2000

Titanium oxide (TiO2) thin films have valuable properties such as a high refractive index, excellent transmittance in the visible and near-IR frequency, and high chemical stability. Therefore it is extensively used in anti-reflection coating, sensor, and photocatalysis as electrical and optical applications. Specially, TiO2 have a high dielectric constant of 180 along the c axis and 90 along the a axis, so it is highlighted in fabricating dielectric capacitors in micro electronic devices. A variety of methods have been used to produce patterned self-assembled monolayers (SAMs), including microcontact printing ($\mu$CP), UV-photolithotgraphy, e-beam lithography, scanned-probe based micro-machining, and atom-lithography. Above all, thin film fabrication on $\mu$CP modified surface is a potentially low-cost, high-throughput method, because it does not require expensive photolithographic equipment, and it produce micrometer scale patterns in thin film materials. The patterned SAMs were used as thin resists, to transfer patterns onto thin films either by chemical etching or by selective deposition. In this study, we deposited TiO2 thin films on Si (1000 substrateds using titanium (IV) isopropoxide ([Ti(O(C3H7)4)] ; TIP as a single molecular precursor at deposition temperature in the range of 300-$700^{\circ}C$ without any carrier and bubbler gas. Crack-free, highly oriented TiO2 polycrystalline thin films with anatase phase and stoichimetric ratio of Ti and O were successfully deposited on Si(100) at temperature as low as 50$0^{\circ}C$. XRD and TED data showed that below 50$0^{\circ}C$, the TiO2 thin films were dominantly grown on Si(100) surfaces in the [211] direction, whereas with increasing the deposition temperature to $700^{\circ}C$, the main films growth direction was changed to be [200]. Two distinct growth behaviors were observed from the Arhenius plots. In addition to deposition of THe TiO2 thin films on Si(100) substrates, patterning of TiO2 thin films was also performed at grown temperature in the range of 300-50$0^{\circ}C$ by MOCVD onto the Si(100) substrates of which surface was modified by organic thin film template. The organic thin film of SAm is obtained by the $\mu$CP method. Alpha-step profile and optical microscope images showed that the boundaries between SAMs areas and selectively deposited TiO2 thin film areas are very definite and sharp. Capacitance - Voltage measurements made on TiO2 films gave a dielectric constant of 29, suggesting a possibility of electronic material applications.

• 한국광학회:학술대회논문집
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• 한국광학회 2009년도 동계학술발표회 논문집
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• pp.133-134
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• 2009

Cold temperature development (CTD) of electron beam (EB) patterned resists and subsequent dry etching were investigated for fabrication of nano-patterned Niobium (Nb). Bulky Nb fims on GaAs substrates were deposited with EB evaporation. Line patterns on Nb cathode were fabricated by EB patterning and reactive ion etching (RIE). Size deviations of nano-sized line patterns from CAD designed patterns are dependent on the EB total exposure, but it can be improved by CTD of EB-exposed resist. Line patterns of 10 to 300 nm widths of EB-exposed resist patterns were drawn under various exposure conditions of $0.2{\mu}s$/dot (total 240,000 dot) with a constant current (50 pA). Compared with room temperature development (RTD), the CTD improves pattern resolution due to the suppression of backscattering effect. RIE with $CF_4$ was performed for formation of several nano-sized line patterns on Nb. Each EB-resist patterned samples with RTDs and CTDs were etched with two different $CF_4$ gas pressures of 5 Pa. Nb etching rate increases while GaAs (or ZEP) etching rate decreases as the chamber pressure increases. This different dependent of the etching rate on the $CF_4$ pressure between Nb and GaAs (or ZEP) has a significant meaning because selective etching of nano-sized Nb line patterns is possible without etching of the underlying active layer.

• KSBB Journal
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• 제22권6호
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• pp.433-437
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• 2007

본 연구에서는 나노임프린트 리소그래피를 이용하여 500 nm line, 600 nm pore, $1{\mu}m$ pore, $2.5{\mu}m$ pore의 마이크로 수준에서 나노 수준에 이르는 다양한 크기와 모양의 nanopore 형태 패턴을 제작하였다. Thermal imprint 방식과 달리 상온, 저압에서 임프린팅이 가능하며 사용되는 스탬프의 수명을 늘리고 보다 미세하고 복잡한 형태의 패턴을 제작할 수 있는 UV-assisted imprint 방식을 사용하였다. E-beam lithography로 패턴을 각인한 quartz소재의 스탬프를 사용하였으며 스탬프의 재질이 투명하여 UV 조사시 UV curable resin이 경화될 수 있도록 하였다. 또한 스탬프의 표면을 (heptadecafluoro-1,1,2,2-tetrahydrodecyl) trichlorosilane의 monolayer 층으로 미리 코팅하여 임프린트 후 스탬프와 기판과의 releasing을 쉽게함과 동시에 패턴의 일부가 스탬프에 묻어 나와 전사된 패턴에 defect가 없도록 하였다. 또한, gold를 미리 증착하여 임프린팅함으로써 lift-off 시에 필요한 hi-layer 층이 필요 없게 되어 산소 플라즈마를 이용한 에칭이 더욱 쉽고 lift-off 공정이 생략될 수 있도록 하였다. 나노임프린트 공정에 있어 가장 큰 문제점은 잔여층의 생성이며 이러한 잔여층을 제거하고자 산소 플라즈마 에칭을 하였다. 에칭공정을 통해 gold의 표면이 완전히 드러났으며 산소 플라즈마를 통해 gold의 표면이 친수성으로 바뀌어 추후 단백질 고정화를 더욱 쉽게 하였다. 그리하여 나노임프린트 기술을 이용해 나노크기의 바이오소자 제작을 가능하게 하였다.

• 한국정밀공학회:학술대회논문집
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• 한국정밀공학회 2005년도 추계학술대회 논문집
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• pp.506-508
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• 2005

In general, organic TFTs are comprised of four components: gate electrode, gate dielectric, organic active semiconductor layer, and source and drain contacts. The TFT current, in turn, is typically determined by channel length and width, carrier field effect mobility, gate dielectric thickness and permittivity, contact resistance, and biasing conditions. More recently, a number of techniques and processes have been introduced to the fabrication of OTFT circuits and displays that aim specifically at reduced fabrication cost. These include microcontact printing for the patterning of metals and dielectrics, the use of photochemically patterned insulating and conducting films, and inkjet printing for the selective deposition of contacts and interconnect pattern. In the fabrication of organic TFTs, microcontact printing has been used to pattern gate electrodes, gate dielectrics, and source and drain contacts with sufficient yield to allow the fabrication of transistors. We were fabricated a pentacene OTFTs on flexible PEN film. Au/Cr was used for the gate electrode, parylene-c was deposited as the gate dielectric, and Au/Cr was chosen for the source and drain contacts; were all deposited by ion-beam sputtering and patterned by microcontact printing and lift-off process. Prior to the deposition of the organic active layer, the gate dielectric surface was treated with octadecyltrichlorosilane(OTS) from the vapor phase. To complete the device, pentacene was deposited by thermal evaporation and patterned using a parylene-c layer. The device was shown that the carrier field effect mobility, the threshold voltage, the subthreshold slope, and the on/off current ratio were improved.