• 제목/요약/키워드: secondary electron

검색결과 643건 처리시간 0.03초

A flat thin display with RF electron generation

  • Dijk, R. Van;Vissenberg, M.C.J.M.;Zwart, S.T. De
    • 한국정보디스플레이학회:학술대회논문집
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    • 한국정보디스플레이학회 2004년도 Asia Display / IMID 04
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    • pp.927-930
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    • 2004
  • We report on a new type of a flat and thin display with a secondary emission electron source. In this display device electrons are multiplied between two secondary emission plates under a high frequency electric field. This principle has a few important advantages over a field emission display: the emission comes from flat plates, which reduces the life-time problems of ion bombardment of field emitter tips. Furthermore, the electron emission is space charge limited which gives a uniform electron distribution. The electrons are extracted from the source and accelerated to a phosphor screen to generate light. Gray levels are made by pulse width modulation.

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$SF_6$ 가스 방전 특성의 유한요소해석 (A finite Element Analysis on the discharge characteristics of $SF_6$ gas)

  • 최승길;심재학;강형부
    • 한국전기전자재료학회논문지
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    • 제13권3호
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    • pp.265-272
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    • 2000
  • In this paper the corona discharge in SF$_{6}$ gas used as insulating material in lots o high voltage equipment, is simulated by finite element method with Flux-Corrected Transport(FCT) method. By application of proposed method the negative corona discharge characteristics in needle to plane electrode is analyzed with time step. For the accuracy of analysis the secondary electron emission by photon and ion are also considered as well as the accuracy of analysis the secondary electron emission by photon and ion are also considered as well as townsend first ionization and electron attachment. The calculated results show that the electric field intensity between anode and ion group is decreased as times go-by according to field distortion by those space charge. Accordingly the electron density is decreased strongly by the attatchment effect of SF6 gas so that the corona discharge becomes extinguished abruptly.y.

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Sample Preparation for Microstructural Characterization of Ni-Yttria-Stabilized Zirconia Anodes

  • Sim, Soo-Man
    • 한국세라믹학회지
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    • 제55권4호
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    • pp.376-380
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    • 2018
  • Microstructural characterization of Ni-yttria-stabilized zirconia (YSZ) anodes using secondary electron images has been limited by a lack of contrast between Ni and YSZ phases. This paper reports a sample preparation method for obtaining secondary electron images that allow the detection of Ni, YSZ, and pore phases together. Ni-YSZ anode samples were obtained by reducing NiO-YSZ samples prepared by using the mixed oxide method. Colloidal silica polishing and electrolytic etching were performed on the Ni-YSZ samples. The morphological change of the sample surface after each polishing process is examined.

주사전자현미경용 전자검출기의 설계 및 제작 (Design and Manufacture of an Electron Detector for Scanning Electron Microscope)

  • 전종업;김지원
    • 한국정밀공학회지
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    • 제25권4호
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    • pp.53-60
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    • 2008
  • Electron detectors used in scanning electron microscope accept electrons emitted from the specimen and convert them to an electrical signal that, after amplification, is used to modulate the gray-level intensities on a cathode ray tube, producing an image of the specimen. Electron detector is one of the key components dominating the performance of scanning electron microscope so that the development of electron detectors having high performance is indispensable to acquire high quality images using scanning electron microscope. In this paper, we designed and manufactured an electron detector and conducted a couple of image capture experiments using it. In particular, scintillator which generates light photons when it is struck by high-energy electrons was manufactured and experimental studies on the optimization of manufacturing condition was carried out. From experiments to evaluate the performance of our detector, it was verified that the performance of our detector is equivalent to or better than that of the conventional one.

Ion-induced secondary electron emission coefficient and work function for MgO thin film with $O_2$ plasma treatment

  • Jung, J.C.;Jeong, H.S.;Lee, J.H.;Oh, J.S.;Park, W.B.;Lim, J.Y.;Cho, J.W.;Choi, E.H.
    • 한국정보디스플레이학회:학술대회논문집
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    • 한국정보디스플레이학회 2004년도 Asia Display / IMID 04
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    • pp.525-528
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    • 2004
  • The ion-induced secondary electron emission coefficient ${\gamma}$ and work function for MgO thin film with $O_2$ plasma treatment has been investigated by ${\gamma}$ -FIB (focused ion beam) system. The MgO thin film deposited from sintered material with $O_2$ plasma treatment is found to have higher ${\gamma}$ and lower work function than those without $O_2$ plasma treatment. The energy of various ions used has been ranged from 100eV to 200eV throughout this experiment. It is found that the highest secondary electron emission coefficient ${\gamma}$ has been achieved for 10 minutes of $O_2$ plasma treatment under RF power of 50W.

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Influences of degradation in MgO protective layer and phosphors on ion-induced secondary electron emission coefficient and static margins in alternating current plasma display panels

  • Jeong, H.S.;Lim, J.E.;Park, W.B.;Jung, K.B.;Choi, E.H.
    • 한국정보디스플레이학회:학술대회논문집
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    • 한국정보디스플레이학회 2004년도 Asia Display / IMID 04
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    • pp.518-521
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    • 2004
  • The degradation characteristics of MgO protective layer and phosphors have been investigated in terms of the ion-induced secondary electron emission coefficient ${\gamma}$ and static margin of discharge voltages, respectively, in this experiment. The ion-induced secondary electron emission coefficients ${\gamma}$ for the degraded MgO protective layer and phosphors have been studied by ${\gamma}$ -focused ion beam system. The energy of Ne+ ions used is from 80 eV to 200 eV in this experiment. The degraded MgO and phosphor layers are found to have higher ${\gamma}$ than that of normal ones without degradations or aged one. Also, the static margin of discharge voltages for test panels with degraded MgO protective layer and phosphors been found to be seriously decreased in comparison with those of normal ones without degradations.

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산화마그네슘 보호막의 이차전자방출과 방전특성에 미치는 산화티타늄첨가의 효과 (Effect of $TiO_2$ Addition on the Secondary Electron Emission and Discharge Properties of MgO Protective Layer)

  • 김영현;김락환;김희재;박종완
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2000년도 춘계학술대회 논문집 디스플레이 광소자 분야
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    • pp.148-151
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    • 2000
  • $Mg_{2-2x}Ti_xO_2$ films were prepared by e-beam evaporation method to be used as possible substitutes for the conventional MgO protective layer. The oxygen content in the films and in turn, the ratio of metal to oxygen gradually increased with increasing the $TiO_2$ content in the starting materials. The pure MgO films exhibited the crystallinity with strong (111) orientation. The $Mg_{2-2x}Ti_xO_2$ films, however, had the crystallinity with (311) preferred orientation. When the $[TiO_2/(MgO+TiO_2)]$ ratios of 0.1 and 0.15 were used, the deposited films exhibited the secondary electron emission yields improved by 50% compared to that of the conventional MgO protective layer, which resulted in reduction in discharge voltage by 12%.

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