• 제목/요약/키워드: scribing

검색결과 76건 처리시간 0.022초

레이저 스크라이빙에 의한 결정질 실리콘 태양전지의 분할 및 특성 분석 (Separation and Characterization of Crystalline Silicon Solar Cell by Laser Scribing)

  • 박지수;오원제;이수호;이재형
    • 한국전기전자재료학회논문지
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    • 제32권3호
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    • pp.187-191
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    • 2019
  • Advances in laser technology have enabled ultra-high-speed ultra-precise processing, thus expanding potential applications to the semiconductor, medical, and photovoltaic industries. In particular, laser scribing technology has been applied to the production of shingled solar modules. In this work, we analyze the effect of laser scribing conditions, e.g., scribing depth, on the characteristics of the resulting divided solar cells. When the scribing depth was greater than $100{\mu}m$, the solar cells were well separated. In addition, the desired scribing depths were reached in fewer scans when the laser spot overlap was 100%. The efficiency of the divided cells decreased due to the high series resistance at scribing depths of less than $100{\mu}m$. However, at scribing depths of approximately $100{\mu}m$, the series resistance was low and efficiency reduction was minimized.

레이저 스크라이빙 공정을 이용한 실리콘 태양전지의 측면분리 효과 (Edge Isolation Effects on Silicon Solar Cells using a Laser Scribing Process)

  • 주재홍;정순원;김광호
    • 전기학회논문지
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    • 제66권5호
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    • pp.851-856
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    • 2017
  • Research on the edge isolation process of typical polycrystalline silicon solar cells was carried out using laser scribing equipment. The voltage-current characteristics of the solar cell before and after laser scribing were analyzed using a solar simulator. Current density and efficiency increased as the fill factor of the solar cell remained constant after the laser scribing process. The efficiency of the solar cell can be increased in a short time by the edge isolation process performed via a laser scribing process. The polycrystalline silicon solar cell was made into a series electrode, and the efficiency of the solar cell increased because the width of the solar cell was narrowed and the active region was widened by the laser scribing process.

$CO_2$ Laser Scribing법을 이용한 PDP용 격벽 제조 (Fabrication of Barrier Ribs for PDP by $CO_2$ Laser Scribing Method)

  • 안정식;이석영;김원용;전형조;이용호;김용석
    • 한국세라믹학회지
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    • 제37권1호
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    • pp.57-62
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    • 2000
  • In this study, an attempt was made to demonstrate the possibility of using laser scribing method in manufacturing the barrier ribs of plasma display panel. The scribing with a CO2 laser was conducted on the green tape produced by the doctor blade tape casting method. Among the processing parameters, the quenching gas pressure, shape of mask, and laser power were found to affect the depth and angle of the scibed barrier ribs.

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BCSC(Buired contact Solar cel1)의 제조를 위한 laser scribing Laser scrining for Buired contact Solar ell

  • 조은철;지일환;이수홍
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 1995년도 춘계학술대회 논문집
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    • pp.154-159
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    • 1995
  • To achieve a high aspect ration of metal contact, buried contact solar cell scribe the silicon surface using laser. The Q-switched NdLYAG laser which has 1.064$\mu\textrm{m}$ wavelength use for silicon scribing with 25~40$\mu\textrm{m}$ width and 20~200$\mu\textrm{m}$ depth capabilities. The 2~3% shading losses are very low campared to the screen printing solar cell. In this paper, we investigate the silicon scribing theory and pratice, scribing system for BCSC processing.

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LED 칩 제조용 사파이어 웨이퍼 절단을 위한 내부 레이저 스크라이빙 가공 특성 분석 (Analysis of Cutting Characteristic of the Sapphire Wafer Using a Internal Laser Scribing Process for LED Chip)

  • 송기혁;조용규;김병찬;강동성;조명우;김종수;유병소
    • 한국산학기술학회논문지
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    • 제16권9호
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    • pp.5748-5755
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    • 2015
  • 스크라이빙 공정은 LED 칩 생성을 위한 절단 공정으로 칩의 특성 및 생산량을 결정하는 중요한 공정이다. 기존의 기계적 방식 및 레이저 방식의 스크라이빙 공정은 칩의 열 변형 및 강도 저하, 절단 영역의 제한 등의 문제점이 있다. 이러한 문제를 해결하기 위해 웨이퍼 내부에 공극을 생성하여 자가 균열을 유도하는 내부 레이저 스크라이빙 공정이 연구되고 있으나 LED 칩 제작을 위한 사파이어 웨이퍼의 절단에 대한 연구는 미비한 실정이다. 본 논문은 LED 칩 제작에 사용되는 사파이어 웨이퍼의 내부 레이저 스크라이빙 공정을 적용하기 위해 주요 가공 변수를 정립하고 가공 실험을 통하여 절단 특성을 분석함으로써 내부 레이저 스크라이빙 시스템 구축을 위한 기초 가공 조건을 확립하였다.

고정밀 레이저 스크라이버 장비의 공정 시뮬레이션 분석에 관한 연구 (A Study on the Process Simulation Analysis of the High Precision Laser Scriber)

  • 최현진;박기진
    • 한국기계가공학회지
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    • 제18권7호
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    • pp.56-62
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    • 2019
  • The high-precision laser scriber carries out scribing alumina ceramic substrates for manufacturing ultra-small chip resistors. The ceramic substrates are loaded, aligned, scribed, transferred, and unloaded. The entire process is fully automated, thereby minimizing the scribing cycle time of the ceramic substrates and improving the throughput. The scriber consists of the laser optical system, pick-up module of ceramic substrates, pre-alignment module, TH axis drive work table, automation module for substrate loading / unloading, and high-speed scribing control S/W. The loader / unloader unit, which has the greatest influence on the scribing cycle time of the substrates, carries the substrates to the work table that carries out the cutting line work by driving the X and Y axes as well as by adsorbing the ceramic substrates. The loader / unloader unit consists of the magazine up / down part, X-axis drive part for conveying the substrates to the left and right direction, and the vision part for detecting the edge of the substrate for the primary pre-alignment of the substrates. In this paper, the laser scribing machining simulation is performed by applying the instrument mechanism of each component module. Through this study, the scribing machining process is first verified by analyzing the process operation and work area of each module in advance. In addition, the scribing machining process is optimized by comparing and analyzing the scribing cycle time of one ceramic substrate according to the alignment stage module speed.

반도체 웨이퍼용 스크라이빙 머신의 파라메터 결정 (The Parameter Determination of a Scribing Machine for Semiconductor Wafer)

  • 차영엽;최범식
    • 한국정밀공학회지
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    • 제20권2호
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    • pp.218-225
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    • 2003
  • The general dicing process cuts a semiconductor wafer to lengthwise and crosswise direction by using a rotating circular diamond blade. However, inferior goods may be made under the influence of several parameters in dicing process such as blade, wafer, cutting water and cutting conditions. Moreover we can not apply this dicing method to a GaN wafer, because the GaN wafer is harder than other wafers such as SiO$_2$, GaAs, GaAsP, and AlGaAs. In order to overcome this problem, development of a new dicing process and determination of dicing parameters are necessary. This paper describes determination of several parameters - scribing depth, scribing force, scriber inclined angle, scribing speed, and factor for scriber replacement - for a new dicing machine using a scriber.

반도체 웨이퍼용 스크라이빙 머신의 파라메터 결정 (The Parameter Determination of Scribing Machine for Semiconductor Wafer)

  • 차영엽;최범식
    • 한국정밀공학회:학술대회논문집
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    • 한국정밀공학회 2002년도 추계학술대회 논문집
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    • pp.164-167
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    • 2002
  • The general dicing process cuts a semiconductor wafer to lengthwise and crosswise direction by using a rotating circular diamond blade. But inferior goods are made under the influence of several parameters in dicing process such as blade, wafer, cutting water and cutting conditions. Moreover we can not applicable this dicing method to GaN wafer, because the GaN wafer is harder than the other wafer such as SiO$_2$, GaAs, CaAsP, and AlCaAs. In order to overcome this problem, development of a new dicing process and determination of dicing parameters are necessary. This paper describes determination of several parameters - scribing depth, scribing force, scriber inclined angle, scribing speed, and factor for scriber replacement - for a new dicing machine using scriber.

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