• Proceedings of the KIEE Conference
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• 2007.07a
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• pp.1283-1284
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• 2007

The barium strontium calcium titanate((Ba,Sr,Ca)$TiO_3$) powders prepared by the sol-gel method and $MnCO_3$ as acceptor were mixed oxide method. The microstructure was investigated with variation of $Pr_{2}O_{3}$ amount. The BSCT powder and $Pr_{2}O_{3}$ were mixed with organic vehicle(Ferro. B75001). BSCT thick films were fabricated by the screen-printing method on alumina substrates. The bottom electrode was Pt and upper electrode was Ag, respectively. All BSCT thick films were sintered at $1420^{\circ}C$, for 2h. The result of the differential thermal analysis(DTA), exothermic peak at around $654^{\circ}C$ due to the formation of the polycrystalline perovskite phase. In the X-ray diffraction(XRD) patterns, all BSCT thick films showed the typical perovskite polycrystalline structure and no pyrochlore phase was dbserved. The microstructure investigated by scanning electron microscope(SEM). Pore and grain size of BSCT thick films were decreased with increasing amount of $Pr_{2}O_{3}$ dopant. And the average grain size and thickness of BSCT thick films doped with 0.1 mol% $Pr_{2}O_{3}$ was $3.09{\mu}m$, $60{\mu}m$, respectively. The relative dielectric constant decreased and dielectric loss decreased with increasing amount of $Pr_{2}O_{3}$ dopant, the values of the BSCT thick films no doped with $Pr_{2}O_{3}$ were 7443 and 4 % at 1 kHz, respectively.

• Proceedings of the KIEE Conference
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• 2007.07a
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• pp.1275-1276
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• 2007

For fabrication of $BaTiO_3$ system Ferroelectric thick films, (Ba,Sr,Ca)$TiO_3$ (BSCT) powders, prepared by using the alkoxide-based sol-gel method, were doped $MnCO_3$ as acceptor and $Dy_{2}O_{3}$ as donor. $MnCO_3$ and $Dy_{2}O_{3}$-doped (Ba,Sr,Ca)$TiO_3$ thick films were fabricated by screen printing techniques on high purity alumina substrates. The structure and dielectric properties were investigated with variation of $Dy_{2}O_{3}$ amount. As a result of the differential thermal analysis(DTA), exothermic peak was observed at around $670^{\circ}C$ due to the formation of the polycrystalline perovskite phase. All the BSCT thick films, sintered at $1420^{\circ}C$ for 2h, showed the typical XRD patterns of perovskite polycrystalline structure and no pyrochlore phase was observed. The average grain size and thickness of specimens no doped with $Dy_{2}O_{3}$ was 1.32mm, 52mm, respectively. The relative dielectric constant decreased and dielectric loss increased with increasing amount of $Dy_{2}O_{3}$ dopant, the values of the BSCT thick films no doped with $Dy_{2}O_{3}$ were 4043 and 0.4% at 1 kHz, respectively. The relative dielectric constant gradually decreased in the measured frequency range from 0.1 to 100 kHz

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.176-176
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• 2007

Flat-panel direct conversion detectors used in compound substance of semiconductor are being studied for digital x-ray imaging. Recently, such detectors are deposited by physical vapor deposition(PVD) generally. But, most of materials (HgI2, PbI2, TlBr, PbO) deposited by PVD have shown difficult fabrication and instability for large area x-ray imaging. Consequently, in this paper, we propose applicable potentialities for screen printing method that is coated on a substrate easily. It is compared to electrical properties among semiconductors such as $HgI_2$, $PbI_2$, PbO, HgBrI, InI, and $TlPbI_3$ under investigation for direct conversion detectors. Each film detector consists of an ~25 to $35\;{\mu}m$ thick layer of semiconductor and was coated onto the substrate. Substrates of $2cm{\times}2cm$ have been used to evaluate performance of semiconductor radiation detectors. Dark current, sensitivity and physics properties were measured. Leakage current of $HgI_2$ as low as $9pA/mm^2$ at the operation bias voltage of ${\sim}1V/{\mu}m$ was observed. Such a value is not better than PVD process, but it is easy to be fabricated in high quality for large area x-ray Imaging. Our future efforts will concentrate on optimization of growth of film thickness that is coated onto a-Si TFT array.

• Korean Journal of Materials Research
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• v.22 no.7
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• pp.358-361
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• 2012

Co and Ni as catalysts in $SnO_2$ sensors to improve the sensitivity for $CH_4$ gas and $CH_3CH_2CH_3$ gas were coated by a solution reduction method. $SnO_2$ thick films were prepared by a screen-printing method onto $Al_2O_3$ substrates with an electrode. The sensing characteristics were investigated by measuring the electrical resistance of each sensor in a chamber. The structural properties of $SnO_2$ with a rutile structure investigated by XRD showed a (110) dominant $SnO_2$ peak. The particle size of the $SnO_2$:Ni powders with Ni at 6 wt% was about 0.1 ${\mu}m$. The $SnO_2$ particles were found to contain many pores according to a SEM analysis. The sensitivity of $SnO_2$-based sensors was measured for 5 ppm of $CH_4$ gas and $CH_3CH_2CH_3$ gas at room temperature by comparing the resistance in air to that in the target gases. The results showed that the best sensitivity of $SnO_2$:Ni and $SnO_2$:Co sensors for $CH_4$ gas and $CH_3CH_2CH_3$ gas at room temperature was observed in $SnO_2$:Ni sensors coated with 6 wt% Ni. The $SnO_2$:Ni gas sensors showed good selectivity to $CH_4$ gas. The response time and recovery time of the $SnO_2$:Ni gas sensors for the $CH_4$ and $CH_3CH_2CH_3$ gases were 20 seconds and 9 seconds, respectively.

• 한국신재생에너지학회:학술대회논문집
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• 2006.06a
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• pp.110-112
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• 2006

Membrane electrode assembly (MEA) for polymer electrolyte fuel cell (PEFC) are commonly prepared in the research laboratory by spraying, screen-printing and brushing catalyst slurry onto membrane or other support material like carbon paper or polyimide film in a batch style. These hand applications of the catalyst slurry are painstaking process with respect to precision of catalyst loading and reproducibility. It has been generally mentioned that the adoption of continuous process is very helpful to develop the reliable product. In the present work, we report the results of using continuous type coater with doctor-blade to coat catalyst slurry for preparing the MEA catalyst layers In a faster and highly reproducible fashion. We show that while expectedly faster than batch style, the machine coater requires the use of slurry of appropriate composition and a properly selected transfer decal material in order to achieve superior MEA plat lnw loading reproducibility. To make highly viscous catalyst slurry that is imperative for using coater, we use 40wt.% Nafion solution and minimize the content of organic solvent. And the choice of proper high surface area catalyst is important in the viewpoint of making well-dispersed slurry. After catalyst coating onto the support material, we transferred the catalyst layer to both sides of Nafion membrane by hot-pressing In this case, the degree of transfer was Influenced by hot-pressing condition including temperature, pressure, and time. To compare the transferring ability, we compared so many films and detaching papers. And among the support, polyethylene terephthalate(PET) film shows the prominent result.

• Korean Chemical Engineering Research
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• v.43 no.5
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• pp.627-631
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• 2005

The $(La_{0.8}Sr_{0.2})_{0.95}MnO_3$/yttria-stabilized zirconia (LSM/YSZ) composites were investigated as anode materials for high temperature steam electrolysis using X-ray diffractometry, scanning electron microscopy, galvanodynamic and galvanostatic polarization method. For this purpose, the LSMperovskites were fabricated in powders by co-precipitation method and then were mixed with 8 mol% YSZ powders in different molar ratios. The LSM/YSZ composites were deposited on 8 mol% YSZ electrolyte disks by means of a screen printing method, followed by sintering at temperatures above $1,100^{\circ}C$. From the experimental results, it is concluded that the electrochemical properties of LSM and the LSM/YSZ composites are closely related to their microstructure and operating temperatures.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.11a
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• pp.276-279
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• 2004

Plasma enhanced chemical vapor deposition (PECVD) of silicon nitride (SiN) is a proven technique for obtaining layers that meet the needs of surface passivation and anti-reflection coating. In addition, the deposition process appears to provoke bulk passivation as well due to diffusion of atomic hydrogen. This bulk passivation is an important advantage of PECVD deposition when compared to the conventional CVD techniques. A further advantage of PECVD is that the process takes place at a relatively low temperature of 300t, keeping the total thermal budget of the cell processing to a minimum. In this work SiN deposition was performed using a horizontal PECVD reactor system consisting of a long horizontal quartz tube that was radiantly heated. Special and long rectangular graphite plates served as both the electrodes to establish the plasma and holders of the wafers. The electrode configuration was designed to provide a uniform plasma environment for each wafer and to ensure the film uniformity. These horizontally oriented graphite electrodes were stacked parallel to one another, side by side, with alternating plates serving as power and ground electrodes for the RF power supply. The plasma was formed in the space between each pair of plates. Also this paper deals with the fabrication of multicrystalline silicon solar cells with PECVD SiN layers combined with high-throughput screen printing and RTP firing. Using this sequence we were able to obtain solar cells with an efficiency of 14% for polished multi crystalline Si wafers of size 125 m square.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.11a
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• pp.494-497
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• 2004

본 연구는 방사선 영상센서 적용을 위한 $HgI_2$ 필름의 특성 평가에 관한 것으로서 X-선 조사조건별 인가전압에 따른 검출신호 특성을 조사하였다. 기존의 $HgI_2$ 검출기의 경우 신호량이 크다는 장점이 있으나 노이즈의 양이 크다. 이에 대한 해결책으로 보호층을 삽입하나 이 경우 X-선 조사에 따른 시간 응답 특성이 있어서 전하트랩현상(tailing effect)에 의한 영향이 크게 존재하였다. 따라서 본 논문에서는 이러한 문제점을 해결하고자 보호층으로써 a-Se 을 삽입하여 기존의 $HgI_2$ 검출기에서 사용되어지는 parlyene이 삽입된 검출기와 전기적 특성을 측정, 비교해보고자 한다. 제작방식으로는 대면적 제작이 용이한 스크린 프린팅 방식을 이용하여 두께 $140\;{\mu}m$와 $3\;cm\;{\times}\;2\;cm$ 면적으로 제조하였다. 측정결과, a-Se을 보호층으로 사용한 $HgI_2$ 필름이 민감도는 거의 비슷하나 누설전류가 안정화 되는데 걸리는 감소시간(decay time)이 parlyene을 사용한 구조에 비해 훨씬 낮았다. 또한 X선에 대한 민감도는 기존의 a-Se에 비해 월등히 높아 적은 방사선 조사량(radiation dose)에서도 신호검출이 가능하여 저선량이 요구되는 방사선 투시촬영(digital fluoroscopy) 적용에 유용할 것으로 기대된다.

• Applied Chemistry for Engineering
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• v.29 no.6
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• pp.782-788
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• 2018

Submicron copper-silver core-shell (Cu@Ag) particles were synthesized using the sonochemical combined transmetallation reaction and the application to printed electronics as a low cost conductive paste was evaluated. $Cu_2O$ of the $Cu_2O/Cu$ composite used as a core in the reaction for the synthesis of core-shell was sonochemically reduced to Cu, and Cu atoms functioned as a reducer for silver ions in transmetallation to achieve the copper-silver core-shell structure. The characterization of submicron particles by TEM-EDS and TG-DSC confirmed the core-shell structure. Conductive pastes in which 70 wt% Cu@Ag was dispersed in solvents were prepared using a binder and wetting agents, and coated on the polyamide film using a screen-printing method. Printed paste films containing synthesized Cu@Ag particles with 8 at% and 16 at% Ag exhibited low resistivity of 96.2 and $38.4{\mu}{\Omega}cm$ after sintering at $180^{\circ}C$ in air, respectively.

• Journal of the Microelectronics and Packaging Society
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• v.27 no.4
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• pp.1-10
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• 2020

This paper reviews the recent development of electronic textile technology, mainly focusing on chip-textile bonding. Before the chip-textile bonding, a circuit on the textile should be prepared to supply the electrical power and signal to the chip mounted on the fabrics. Either embroidery with conductive yarn or screen-printing with the conductive paste can be applied to implement the circuit on the fabrics depending on the circuit density and resolution. Next, chip-textile bonding can be performed. There are two choices for chip-textile bonding: fixed connection methods such as soldering, ACF/NCA, embroidery, crimping, and secondly removable connection methods like a hook, magnet, zipper. Following the chip-textile bonding process, the chip on the textile is generally encapsulated using PDMS to ensure reliability like water-proof.