• Proceedings of the Korean Vacuum Society Conference
• /
• 2012.08a
• /
• pp.174-175
• /
• 2012

(In, Ga) N-based III-nitride semiconductor materials have been viewed as the most promising materials for the applications of blue and green light emitting devices such as light-emitting diodes (LEDs) and laser diodes. Although the InGaN alloy can have wide range of visible wavelength by changing the In composition, it is very hard to grow high quality epilayers of In-rich InGaN because of the thermal instability as well as the large lattice and thermal mismatches. In order to avoid phase separation of InGaN, various kinds of structures of InGaN have been studied. If high-quality In-rich InGaN/GaN multiple quantum well (MQW) structures are available, it is expected to achieve highly efficient phosphor-free white LEDs. In this study, we proposed a novel InGaN double hetero-structure grown on GaN nano-pyramids to generate broad-band red-color emission with high quantum efficiency. In this work, we systematically studied the optical properties of the InGaN pyramid structures. The nano-sized hexagonal pyramid structures were grown on the n-type GaN template by metalorganic chemical vapor deposition. SiNx mask was formed on the n-type GaN template with uniformly patterned circle pattern by laser holography. GaN pyramid structures were selectively grown on the opening area of mask by lateral over-growth followed by growth of InGaN/GaN double hetero-structure. The bird's eye-view scanning electron microscope (SEM) image shows that uniform hexagonal pyramid structures are well arranged. We showed that the pyramid structures have high crystal quality and the thickness of InGaN is varied along the height of pyramids via transmission electron microscope. Because the InGaN/GaN double hetero-structure was grown on the nano-pyramid GaN and on the planar GaN, simultaneously, we investigated the comparative study of the optical properties. Photoluminescence (PL) spectra of nano-pyramid sample and planar sample measured at 10 K. Although the growth condition were exactly the same for two samples, the nano-pyramid sample have much lower energy emission centered at 615 nm, compared to 438 nm for planar sample. Moreover, nano-pyramid sample shows broad-band spectrum, which is originate from structural properties of nano-pyramid structure. To study thermal activation energy and potential fluctuation, we measured PL with changing temperature from 10 K to 300 K. We also measured PL with changing the excitation power from 48 ${\mu}W$ to 48 mW. We can discriminate the origin of the broad-band spectra from the defect-related yellow luminescence of GaN by carrying out PL excitation experiments. The nano-pyramid structure provided highly efficient broad-band red-color emission for the future applications of phosphor-free white LEDs.

• Korean Journal of Optics and Photonics
• /
• v.18 no.5
• /
• pp.351-361
• /
• 2007

The samples composed of a GST thin film and the protective layers of $ZnS-SiO_2$ or $Al_2O_3$ coated on c-Si substrate were prepared by using the magnetron sputtering method. Samples of three different structures were prepared, that is, i) the GST single film on c-Si substrate, ii) the GST film sandwiched by the protective $ZnS-SiO_2$ layers on c-Si substrate, and iii) the GST film sandwiched by $Al_2O_3$ protective layers on c-Si substrate. The ellipsometric constants in the temperature range from room temperature to $700^{\circ}C$ were obtained by using the in-situ ellipsometer equipped with a conventional heating chamber. The measured ellipsometric constants show strong variations versus temperature. The variation of ellipsometric constants at the temperature region higher than $300^{\circ}C$ shows different behaviors as the ambient medium is changed from in air to in vacuum or the protective layers are changed from $ZnS-SiO_2$ to $Al_2O_3$. Since the long heating time of 1-2 hours is believed to be the origin of the high temperature variation of ellipsometric constants upon the heating environment and the protective layers, a PRAM (Phase-Change Random Access Memory) recorder is introduced to reduce the heating time drastically. By using the PRAM recorder, the GST samples are heated up to $700^{\circ}C$ decomposed preventing its partial evaporation or chemical reactions with adjacent protective layers. The surface image obtained by SEM and the surface micro-roughness verified by AFM also confirmed that samples prepared by the PRAM recorder have smoother surface than the samples prepared by using the conventional heater.

• Journal of the korean academy of Pediatric Dentistry
• /
• v.26 no.3
• /
• pp.538-553
• /
• 1999

The purpose of this study was to compare the shear bond strength and the anticariogenicity of glass ionomer cement with conventional bonding resin and fluoride releasing resin. After the shear bond strength test, scanning electron microscopic observation was performed for the evaluation of the fracture patterns in each group. Under the polarizing light microscope, artificially induced carious lesions were evaluated and the lesion depths of the samples were measured using image analyzing program(Image-Pro $PLUS^{TM}$, USA). 50 sound maxillary premolars were used for the bond strength test and another 30 for the anticariogenic test. Data collected were analyzed statistically using Oneway-ANOVA and Scheffe test. The results were as follows: 1. Glass ionomer groups(G-III, IV, V) generally showed the lower bond strength values than resin groups(G-I, II). 2. Among the two resin groups, G-I showed the higher bond strength than G-II without statistically significant difference between them(p>.05). 3. Within glass ionomer groups, statistical significance was found between G-III and G-V with the superior bond strength in G-V (p<.05). 4. Under the SEM, adhesive failure was the predominant fracture pattern in G-I and II, whereas cohesive failures were mainly observed in G-III. In G-IV and V, mixed type of pattern where the both fracture patterns coexisted within samples could be seen. 5. In evaluation of the depth of artificially developed carious lesion, glass ionomer group showed shallower depth than resin groups with statistical significance between G-III and G-I, II(p<.05). Among resin groups, fluoride releasing resin(G-II) showed the shallower depth than conventional resin(G-I)(p<.05).