• Journal of Gifted/Talented Education
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• v.20 no.3
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• pp.767-788
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• 2010

The purpose of this study was to examine emotional characteristics and to provide information about the special needs of counselling of science gifted in Korea. The subjects were 143 science gifted high school students in Busan that had been tested MBTI and MMPI-A. The distribution map of MBTI type was examined and Pearson's correlation, one-way ANOVA, multiple regression analysis were used to analyse the relation between MBTI and MMPI-A through SPSS 17.0 program. The results showed as follows: first, ENTP, INTP, ISTJ personality types and NT temperament type were the most frequently from the distribution map of MBTI type. Second, F1, F2, F, Hs, D, Pt, Sc and Si scales of MMPI-A were positively related to I preference of MBTI and K and Ma scales of MMPI-A were significantly related to E preference of MBTI from Pearson's correlation. Third, The score of IN group was significantly more high in F1, Hs, D, SC and Si scales of MMPI-A than other group in the relation between two combination preferences of MBTI and scale of MMPI-A. The following results were same; IS group in D, Si scales, EN group in Ma scale, IT group in Hs, D, Pt and S scales, IF group in VRIN, D and Si scales, ET in Ma scale, IJ group in D and Si, IP group in F1, F, Hs, D, Hy, Pt, Sc and Si scales, EJ and EP groups in Ma scale. Finally, I preference of MBTI by F1, F2, F, Hs, D, Pt, Sc and Si scales of MMPI-A, E preference of MBTI by Ma scale of MMPI-A, F preference of MBTI by K scale of MMPI-A and P preference of MBTI by Hy scale of MMPI-A were significantly predicted from multiple regression analysis. Limitations of the current study and the suggestions for further research were offered.

• Electrical & Electronic Materials
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• v.7 no.6
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• pp.481-489
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• 1994

The $SnO_2$/(n)Si solar cell was fabricated by electron beam evaporation method, and their properties were investigated. In proportion to increase of substrate and annealing temperature, the conductivity of $SnO_2$ thin film was increased, but its optical transmission decreases because of increasing optical absorption of free electrons in the thin film. $SnO_2$/Si Solar cell characteristics were improved by annealing, but the solar cells was deteriorated by heat treatment above 500[.deg. C]. The optimal outputs of $SnO_2$/Si solar cell through above investigations were $V_{\var}$:350[mV], $J_{sc}$ ;16.53[mA/c $m^{2}$], FF;0.41, .eta.=4.74[%]

• Journal of the Korean Ceramic Society
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• v.35 no.6
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• pp.535-542
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• 1998

SOI(silicon oninsulator) was fabricated through the direct bonding of a hydrophilized single crystal Si wafer and a thermally oxidized SiO2 thin film to investigate the stacking faults in silicon at the Si/SiO2 in-terface. At first the oxidation kinetics of SiO2 thin film and the stacking fault distribution at the oxidation interface were investigated. The stacking faults could be divided into two groups by their size and the small-er ones were incorporated into the larger ones as the oxidation time and temperature increased. The den-sity of the smaller ones based critically lower eventually. The SOI wafers directly bonded at the room temperature were annealed at 120$0^{\circ}C$ for 1 hour. The stacking faults at the bonding and oxidation interface were examined and there were anomalies in the distributions of the stacking faults of the bonded region to arrange in ordered ring-like fashion.

• Journal of the Semiconductor & Display Technology
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• v.11 no.3
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• pp.27-31
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• 2012

This paper presents a study on the design of photovoltaic system with reversal tracking reflector. The reversal tracking reflector is conceptually designed by using TRIZ. The 20 to 30% of incident rays cannot produce the current and reflected back to the glass surface because of high refractive index of solar cell which are produced from Si, GaAs. The solution of this problem has been derived using 6SC(6 steps creativity)TRIZ. The reflector which has the actuator can be trackback the sun. Reversal tracking reflector which mounted on the top of the system prevents the shadowing loss and improve the efficiency of track back function. The anti-glare reflector prevents the heat due to the concentrated reflected light rays.

• Proceedings of the Korea Water Resources Association Conference
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• 2015.05a
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• pp.267-267
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• 2015

가상수의 흐름을 보다 가시적으로 파악하기 위하여 대두된 개념이 물발자국(water footprint)이다. 이는 흔히 사용되고 있는 생태발자국(ecological footprint)이나 탄소발자국(carbon footprint)에 착안하여 도입된 개념으로 한 국가의 물발자국은 직 간접적으로 물건이나 재화를 생산하는데 국민이 소비하는 물의 총량으로 정의된다. 물발자국을 내적/외적으로 단순히 구분하여 산정하는 방식이 진화하여 1단위의 생산에서 유통 및 서비스까지 확대하여 그 전 과정을 모두 포함하는 물발자국 산정방식이 도입된 것은 최근의 일이다. 직접적인 물사용과 간접적인 물사용을 구분하여 물발자국을 산정하고, 그 위에 물의 성질에 따라 green water, blue water, 그리고 grey water로 각각 개념을 상세화하여 물발자국을 산정하는 방안이 도입되었다. 2009년 물발자국 산정의 표준화를 위한 스위스의 제안이 ISO에 제출되었고, 각 국가들에 의한 투표가 진행되어 2010년 물발자국 국제표준안이 채택되었다. 본 연구는 이러한 국제기구에 의한 일련의 국제표준화 작업을 대상으로 진행되었다. 2014년 ISO/TC 207 국제총회가 개최되어 환경경영시스템(SC1), 환경감사(SC2), 환경 라벨링(SC3), 환경성과평가(SC4), 전과정평가(SC5), 온실가스관리(SC7)의 6개 분과위원회(Sub-Committees)가 구성되어 세부논의가 진행되었으며, 이러한 과정을 분석함으로서 물발자국 국제표준(ISO 14046)과 향후 우리나라의 대응방안을 고찰하였다. 물발자국 국제표준(ISO 14046) 제정을 통해 물발자국의 필요성 및 중요성에 대한 국가 간 합의는 도출되었으나, 적용시기 및 세부적인 방법론 등에 대한 이견이 여전히 존재하고 있다. ISO 14046의 실질적 적용에 필요한 세부사항과 관련된 기술보고서 작업초안(WD 14073)은 작업반(SC5/WG8)에서 진행되고 있다. 그러나 물발자국 국제표준이 국가 간 무역장벽이나 특정국의 진입을 막는 수단으로 사용될 수 있는 점 등 실질적으로 국제표준의 도입에 따른 문제점 역시 존재한다. 본 연구에서 제시된 국제표준의 도입 방안을 통하여 가상수무역의 국제적 선점효과를 기대함과 동시에 수자원의 유효한 활용을 기대할 수 있을 것이다.

• Journal of the Korean Society of Safety
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• v.38 no.4
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• pp.8-14
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• 2023

This study presents the characteristics of short circuits (SCs) caused by excessive currents in high-voltage cables used in electric vehicles and emphasizes the need to calculate the cross-sectional areas of these cables according to the SC current. Three direct current power supplies were connected in parallel to test the SC characteristics caused by excessive currents, and a timer and a magnetic contactor were used to deliver the conduction time and SC current. A circular infrared-radiation heater was used to test the temperature-dependent SC characteristics, a thermocouple was used to measure the temperature, and a shunt resistor was used to measure the current. As the SC current increased, the fusing time of the cable decreased. Additionally, a high-voltage cable (with an area of 16 mm² ) used in electric vehicles fused when a current (approximately equal to 55 times the allowable current) flowed for 0.2 s (operating time of the protective device). When the SC current is 10 kA, the cable may fuse during the operating time of the protective device, thus creating a fire hazard. In electric vehicles, the size of the SC current increases in proportion to the capacity of the battery. Thus, the cross-sectional areas of the cables used should be calculated accordingly, and cable operations should be properly coordinated with the surrounding protective devices.

• Solar Energy
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• v.6 no.2
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• pp.70-75
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• 1986

The fabrication procedure and characteristics of $Ta_2O_5/Al/SiO_2/p-Si$ MIS solar cells forming a fine grating pattern of aluminum evaporated on to p-type silicon crystal are discribed. The proper temperature for oxide growing of these cells was found to be about $450^{\circ}C$ for 20 minutes with oxygen flow. The conversion efficiency increased about 3% after $750{\AA}$ thickness of tantalium silica film spin on anti-reflective coating. The best results showed that $V_{oc}=0.545V,\;J_{sc}=34mA$ and F.F = 0.65, which represent that the conversion efficiency is 12%.

• Clean Technology
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• v.24 no.3
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• pp.249-254
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• 2018

In order to improve the photo conversion efficiency (${\eta}$) of dye-sensitized solar cells (DSSCs), the electrospun $TiO_2$, $SiO_2$, $ZrO_2$ and $SnO_2$ nanofibers were added into the hydrothermally prepared $TiO_2$ nanoparticles for application to a photoelectrode for DSSCs. The $TiO_2$ nanofiber added photoelectrode exhibited a higher photo current density ($J_{sc}$) compared to the bare $TiO_2$ nanoparticles, which is caused from acceleration of the transfer of excited electron from dye molecule due to the nanofiber structure. The DSSCs with $SiO_2$ nanofibers shows a higher open circuit voltage ($V_{oc}$) of 0.67 V and the highest photo conversion efficiency was found to be 6.24%.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2007.04a
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• pp.19-19
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• 2007

Recently, we have developed p-i-n hydrogenated amorphous silicon (a-Si:H) single junction (SJ) thin film solar cells with RF (13,56MHz) plasma enhanced chemical vapor deposition (PECVD) systems, and also successfully fabricated the mini-modules (>300$cm^2$), using laser scribing technique to form an integrated series connection, The efficiency of a mini-module was 7.4% (Area=305$cm^2$, $I_{SC}$=0.25A, $V_{OC}$=14.74V, FF=62%).

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.26 no.1
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• pp.73-79
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• 2013

Crystalline silicon solar cells with $SiN_x/SiN_x$ and $SiN_x/SiO_x$ double layer anti-reflection coatings(ARC) were studied in this paper. Optimizing passivation effect and optical properties of $SiN_x$ and $SiO_x$ layer deposited by PECVD was performed prior to double layer application. When the refractive index (n) of silicon nitride was varied in range of 1.9~2.3, silicon wafer deposited with silicon nitride layer of 80 nm thickness and n= 2.2 showed the effective lifetime of $1,370{\mu}m$. Silicon nitride with n= 1.9 had the smallest extinction coefficient among these conditions. Silicon oxide layer with 110 nm thickness and n= 1.46 showed the extinction coefficient spectrum near to zero in the 300~1,100 nm region, similar to silicon nitride with n= 1.9. Thus silicon nitride with n= 1.9 and silicon oxide with n= 1.46 would be proper as the upper ARC layer with low extinction coefficient, and silicon nitride with n=2.2 as the lower layer with good passivation effect. As a result, the double layer AR coated silicon wafer showed lower surface reflection and so more light absorption, compared with $SiN_x$ single layer. With the completed solar cell with $SiN_x/SiN_x$ of n= 2.2/1.9 and $SiN_x/SiO_x$ of n= 2.2/1.46, the electrical characteristics was improved as ${\Delta}V_{oc}$= 3.7 mV, ${\Delta}_{sc}=0.11mA/cm^2$ and ${\Delta}V_{oc}$=5.2 mV, ${\Delta}J_{sc}=0.23mA/cm^2$, respectively. It led to the efficiency improvement as 0.1% and 0.23%.