• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.470-470
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• 2010

Negative ions are generated in fusion edge plasmas, material processing plasmas, ionospheric plasmas. Analytic formulas for the deduction of the absolute density of negative ions was given by using the current-voltage(IV) characteristics of two electric probes at two different pressures [1], and negative ion density has been measured by one electric probe using the current-voltage characteristics of three different pressures [2]. Ratios of ion and electron saturation currents and electron temperatures and sheath areas of different pressures are usually incorporated into two equations with two unknowns for the negative ion density. In the previous publications, the sheath factor(sheath area, sheath density, sheath velocity) and effective masses of background ions with different pressures are qualitatively incorporated for the deduction of negative density. In this presentation, the quantitative and detailed relation of negative ion density with sheath factor and effective masses are going to be given. The effect of these parameters on the change of IV characteristics will be addressed.

• Electronics and Telecommunications Trends
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• v.34 no.5
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• pp.71-80
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• 2019

Gallium nitride (GaN) can be used in high-voltage, high-power-density/-power, and high-speed devices owing to its characteristics of wide bandgap, high carrier concentration, and high electron mobility/saturation velocity. In this study, we investigate the technology trends for X-/Ku-band GaN RF power devices and MMIC power amplifiers, focusing on gate-length scaling, channel structure, and power density for GaN RF power devices and output power level and output power density for GaN MMIC power amplifiers. Additionally, we review the technology trends in gallium arsenide (GaAs) RF power devices and MMIC power amplifiers and analyze the technology trends in RF power devices and MMIC power amplifiers based on both GaAs and GaN. Furthermore, we discuss the current direction of national research by examining the national and international technology trends with respect to X-/Ku-band power devices and MMIC power amplifiers.

• Electronics and Telecommunications Trends
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• v.37 no.5
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• pp.11-21
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• 2022

GaN (Gallium-Nitride) is a promising candidate material in various radio frequency applications due to its inherent properties including wide bandgap, high carrier concentration, and high electron mobility/saturation velocity. Notably, AlGaN/GaN heterostructure field effect transistor exhibits high operating voltage and high power-density/power at high frequency. In next-generation radar systems, GaN power transistors and monolithic microwave integrated circuits (MMICs) are significant components of transmitting and receiving modules. In this paper, we introduce technological trends for C-/X-/Ku-band GaN MMICs including power amplifiers, low noise amplifiers and switch MMICs, focusing on the status of GaN MMIC fabrication technology and GaN foundry service. Additionally, we review the research for the localization of C-/X-/Ku-band GaN MMICs using in-house GaN transistor and MMIC fabrication technology. We also discuss the results of C-/X-/Ku-band GaN MMICs developed at Defense Materials and Components Convergence Research Department in ETRI.

• Smart Structures and Systems
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• v.28 no.6
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• pp.727-735
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• 2021

Recently, non-destructive health monitoring methods such as magnetic flux leakage (MFL) method, have become popular due to their advantages over destructive methods. Currently, numerical study on this field has been limited to simplified studies by only obtaining MFL instead of induced voltage inside coil sensor. In this study, it was proposed to perform a novel numerical simulation of MFL's coil sensor by considering vital parameters including specimen's motion with constant velocity and saturation status of specimen in time domain. A steel-rod specimen with two stepwise cross-sectional changes (i.e., 21% and 16%) was fabricated using low carbon steel. In order to evaluate the results of numerical simulation, an experimental test was also conducted using a magnetic probe, with same size specimen and test parameters, exclusively. According to comparative results of numerical simulation and experimental test, similar signal amplitude and signal pattern were observed. Thus, proposed numerical simulation method can be used as a reliable source to check efficiency of sensor probe when different size specimens with different defects should be inspected.

• Journal of Sensor Science and Technology
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• v.30 no.6
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• pp.441-445
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• 2021

The components affecting the extrinsic transconductance (g_{m_ext}) in In_0.7Ga_0.3As quantum-well (QW) high-electron-mobility transistors (HEMTs) on an InP substrate were investigated. First, comprehensive modeling, which only requires physical parameters, was used to explain both the intrinsic transconductance (g_{m_int}) and the g_{m_ext} of the devices. Two types of In_0.7Ga_0.3As QW HEMT were fabricated with gate lengths ranging from 10 ㎛ to sub-100 nm. These measured results were correlated with the modeling to describe the device behavior using analytical expressions. To study the effects of the components affecting g_{m_int}, the proposed approach was extended to projection by changing the values of physical parameters, such as series resistances (R_S and R_D), apparent mobility (𝜇_{n_app}), and saturation velocity (𝜈_sat).

• Journal of IKEEE
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• v.27 no.1
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• pp.65-70
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• 2023

More than 10,000 Carbon NanoTube Field Effect Transistors (CNTFETs), which have advantages such as high carrier mobility, large saturation velocity, low intrinsic capacitance, flexibility, and transparency, have been successfully integrated into one semiconductor chip using conventional semiconductor design procedures and manufacturing processes. Three-dimensional multilayer structure of the CNTFET semiconductor chip and various CNTFET manufacturing process research increase the possibility of making the hybrid MOSFET-CNTFET semiconductor chip which combines conventional MOSFETs and CNTFETs together in a semiconductor chip. This paper discusses a methodology to design 6T binary SRAM using hybrid MOSFET-CNTFET. By utilizing the existing MOSFET SRAM or CNTFET SRAM design method, we will introduce a method of designing a hybrid MOSFET-CNTFET SRAM and compare its performance with the conventional MOSFET SRAM and CNTFET SRAM.

• Economic and Environmental Geology
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• v.44 no.3
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• pp.229-238
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• 2011

S-wave, which provides lithology and pore fluid information, plays a key role in estimating gas-hydrate saturation. In general, P- and S-wave velocities increase in the presence of gas-hydrate and the P-wave velocity decreases in the presence of free gas under the gas-hydrate layer. Whereas there are very small changes, even slightly increases, in the S-wave velocity in the free gas layer because S-wave is not affected by the pore fluid when propagating in the free gas layer. To verify those velocity properties of the BSR (bottom-simulating reflector) depth in the gas-hydrate prospect area in the Ulleung Basin, P- and S-wave velocity profiles were derived from multi-component ocean-bottom seismic data which were acquired by Korea Institute of Geoscience and Mineral Resources (KIGAM) in May 2009. OBS (ocean-bottom seismometer) hydrophone component data were modeled and inverted first through the traveltime inversion method to derive P-wave velocity and depth model of survey area. 2-D multichannel stacked data were incorporated as an initial model. Two horizontal geophone component data, then, were polarization filtered and rotated to make radial component section. Traveltimes of main S-wave events were picked and used for forward modeling incorporating Poisson's ratio. This modeling provides S-wave profiles and Poisson's ratio profiles at every OBS site. The results shows that P-wave velocities in most OBS sites decrease beneath the BSR, whereas S-wave velocities slightly increase. Consequently, Poisson's ratio decreased strongly beneath the BSR indicating the presence of a free gas layer under the BSR.

• Journal of the Korean Institute of Telematics and Electronics
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• v.26 no.1
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• pp.48-61
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• 1989

In this paper, two-dimensional numerical simulation of GaAs MESFFT with 0.7${\mu}m$ gate length is perfomed. Drift-diffusion model which consider that mobility is a function of local electric field, is used. As a discretization method, instead of FDM (finite difference method) and FEM (finite element method), the Control-Volume Formulation (CVF) is used and as a numerical scheme current hybrid scheme or upwind scheme is replaced by power-law scheme which is very approximate to exponential scheme. In the process of numerical analysis, Peclet number which represents the velocity ratio of drift and diffusion, is introduced. And using this concept a current equation which consider numerical scheme at the interface of control volume, is proposed. The I-V characteristics using the model and numerical method has a good agreement with that of previous paper by others. Therefore, it is confined that it may be useful as a simulator for GaAs MESFET. Besides I-V characteristics, the mechanism of both velocity saturation in drift-diffusion model is described from the view of velocity and electric field distribution at the bottom of the channel. In addition, the relationship between the mechanism and position of dipole and drain current, are described.

• KSCE Journal of Civil and Environmental Engineering Research
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• v.33 no.4
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• pp.1499-1508
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• 2013

Freeze-thaw tests were performed on gneiss samples collected from Terra Nova Bay, Antarctica in order to examine the engineering properties of rocks with slightly weathered (SW) and moderately weathered (MW). The tests were conducted under temperature ranging from $20{\pm}2^{\circ}C$ to $-20{\pm}2^{\circ}C$. A cycle of test consisted of 5 hours of freezing followed by another 5 hours of thawing under full saturation. In this paper, total 200 cycles of freeze-thaw test were performed with measurements of porosity, absorption, ultrasonic velocity, and shore hardness per each 20 cycle and that of uniaxial compressive strength (UCS) per each 50 cycle. The UCS of the SW rocks approximately decreased 0.07 MPa per a single cycle, while that of MW rocks decreased around 0.2 MPa per a single cycle. During the 200 cycles of SW rocks, the absorption increased from 0.23% to 0.39%, the P-wave velocity decreased from 4,054 m/s to 3,227 m/s and S-wave velocity decreased from 2,519 m/s to 2,079 m/s. Similarly, those of MW rocks changed from 0.65% to 1.6%, 3,207 m/s to 2,133 m/s and 2,028 m/s to 1,357 m/s. In conclusion, it was inferred that the properties of SW rocks experienced approximately 200-300 cycles of freeze-thaw process become close to those of MW rocks.

• Journal of the Korean Geotechnical Society
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• v.24 no.12
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• pp.103-111
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• 2008

Soils naturally contain grains of different minerals which may be dissolved under chemical or physical processes. The dissolution leads changes in microstructure of particulate media, such as an increase in local void or permeability, which affects the strength and deformation of soils. This study focuses on the small strain stiffness characteristics of vanishing mixtures, which consist of sand and salt particles at different volume fractions. Experiments are carried out in a conventional oedometer cell (Ko-loading) integrated with bender elements for the measurement of shear waves. Dissolutions of particles are implemented by saturating the mixtures at various confining stresses. Axial deformation and shear waves are recorded after each loading stage and during dissolution process. Experimental results show that after dissolution, the vertical strain and the void ratio increase, while the shear wave velocity and small strain shear modulus decrease. The decrease of the velocity results from the void ratio increase and particle contact decrease. The process monitoring during dissolution of the particles shows that the vertical strain dramatically increases at the beginning of the saturation process and converges after vanishing process finishes, and that the shear wave velocity decreases at the beginning and increases due to the particle reorientation. Specimens prepared by sand and salt particles are proved to be able to provide a valuable insight in macro structural behaviors of the vanishings mixtures.