• 한국의학물리학회:학술대회논문집
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• 한국의학물리학회 2002년도 Proceedings
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• pp.260-262
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• 2002

An accurate measurement of dose distribution is indispensable to perform radiation therapy planning. A measurement technique using a radiographic film, which is called a film dosimetry, is widely used because it is easy to obtain a dose distribution with a good special resolution. In this study, we tried to develop an analyzing system for the film dosimetry using usual office automation equipments such as a personal computer and an image scanner. A film was sandwiched between two solid water phantom blocks (30 ${\times}$ 30 ${\times}$ 15cm). The film was exposed with Cobalt-60 ${\gamma}$-ray whose beam axis was parallel to the film surface. The density distribution on the exposed film was stored in a personal computer through an image scanner (8bits) and the film density was shown as the digital value with NIH-image software. Isodose curves were obtained from the relationship between the digital value and the absorbed dose calculated from percentage depth dose and absorbed dose at the reference point. The isodose curves were also obtained using an Isodose plotter, for reference. The measurements were carried out for 31cGy (exposure time: 120seconds) and 80cGy (exposure time: 300seconds) at the reference point. While the isodose curves obtained with our system were drawn up to 60% dose range for the case of 80cGy, the isodose curves could be drawn up to 80% dose range for the case of 31cGy. Furthermore, the isodose curves almost agreed with that obtained with the isodose plotter in low dose range. However, further improvement of our system is necessary in high dose range.

• 한국진공학회지
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• 제18권5호
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• pp.352-357
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• 2009

본 연구에서는 1.1 eV의 에너지대역을 흡수할 수 있는 InAs 양자점구조와 1.3 eV의 에너지 대역을 흡수 할 수 있는 InGaAs 양자우물구조를 이용한 텐덤형 태양전지의 구조를 1D poisson을 이용해 설계하고, 분자선 에피택시 장비를 이용하여 각각 5, 10, 15층씩 쌓은 양자점 및 양자우물구조를 삽입하여 p-n접합을 성장하였다. Photoluminescence (PL) 측정을 이용한 광학적특성 평가에서 양자점 5층 및 양자우물 10층을 삽입한 구조의 PL 피크가 가장 높은 상대발광강도를 나타냈으며, 각각 1.1 eV 및 1.3 eV에서 57.6 meV 및 12.37 meV의 Full Width at Half Maximum을 나타내었다. 양자점의 밀도 및 크기는 Reflection High-Energy Electron Diffraction system과 Atomic Force Microscope를 이용해 분석하였다. 그리고 GaAs/AlGaAs층을 이용한 터널접합에서는 I-V 측정을 통하여 GaAs층의 두께(20, 30, 50 nm)에 따른 터널링 효과를 평가하였다. GaAs 층의 두께가 30 nm 및 50 nm의 터널접합에서는 backward diode 특성을 나타낸 반면, 20 nm GaAs층의 GaAs/AlGaAs 터널접합에서는 다이오드 특성 곡선을 확인하였다.