• Journal of the Korean Mathematical Society
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• v.42 no.3
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• pp.405-434
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• 2005

We establish appropriate $L^p$ estimates for a class of maximal operators $S_{\Omega}^{(\gamma)}$ on the product space $R^n\;\times\;R^m\;when\;\Omega$ lacks regularity and $1\;\le\;\gamma\;\le\;2.\;Also,\;when\;\gamma\;=\;2$, we prove the $L^p\;(2\;{\le}\;P\;<\;\infty)\;boundedness\;of\;S_{\Omega}^{(\gamma)}\;whenever\;\Omega$ is a function in a certain block space $B_q^{(0,0)}(S^{n-1}\;\times\;S^{m-1})$ (for some q > 1). Moreover, we show that the condition $\Omega\;{\in}\;B_q^{(0,0)}(S^{n-1}\;\times\;S^{m-1})$ is nearly optimal in the sense that the operator $S_{\Omega}^{(2)}$ may fail to be bounded on $L^2$ if the condition $\Omega\;{\in}\;B_q^{(0,0)}(S^{n-1}\;\times\;S^{m-1})$ is replaced by the weaker conditions $\Omega\;{\in}\;B_q^{(0,\varepsilon)}(S^{n-1}\;\times\;S^{m-1})\;for\;any\;-1\;<\;\varepsilon\;<\;0.$

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.07a
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• pp.403-404
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• 2005

The conductivity of diamond like carbon films embedded with silver nanoclusters were investigated as a function of silver concentrations in the film. By increasing the concentration of silver in the film from 0 to 20 at% the conductivity varied from $10^{-13}$ to $10^2\;ohm^{-1}\;cm^{-1}$. The data have been discussed within the model of a dielectric matrix containing conductive inclusions. The conductivity data analysis using percolation theory has been showed that percolation threshold occurred at Ag percentage in the film $x_c$ =5 at %.

• Journal of the Korean Vacuum Society
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• v.15 no.6
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• pp.637-641
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• 2006

We present the DC and RF characteristics of 100 nm gate length InGaAs/InAlAs/GaAs metamorphic high electron mobility transistors (MHEMTs). We fabricated the T-gate with 100 nm foot print by using a positive resist ZEP520/P (MMA-MAA)/PMMA trilayer by double exposure method. The fabricated 100 nm MHEMT with a $70\;{\mu}m$ unit gate width and two fingers were characterized through do and rf measurements. The maximum drain current density of 465 mA/mm and extrinsic transconductance $(g_m)$ of 844 mS/mm were obtained with our devices. From rf measurements, we obtained the current gain cut-off frequency $(f_T)$ of 192 GHz, and maximum oscillation frequency $(f_{max})$ 310 GHz.

• Journal of the Korean Chemical Society
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• v.11 no.4
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• pp.165-169
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• 1967

Eine neue Methode zur Herstellung von Meßpraparation wird die Bestimmng der Spurenelemente Quecksilber, Kupfer, Blei, Zink, Nickel, Kobalt und Eisen durch Rontgenflureszenzspektrometrie entwickelt. Die Spurenelemente werden aus waßrigen Losungen durch Einleitung von Schwefelwasserstoff mit Aluminiumsulfat als Trager bei pH8 ausgefallt. Die Niederschlage der Metallsulfide werden uber Membranfilter filtriert, mit Gelatine fixiert und ihre Absolutmengen durch Rontgenfluoreszenz analyse bestimmt. Bei der geringen Dicke der auszumessenden Schichten treten Matrixeffekte nicht auf. Durch den Zusatz von Aluminiumsulfat-Trager wird eine gute Reproduzierbarkeit erzielt: Quecksilber, Kupfer, Blei, Zink, Nickel und Kobalt werden bei einer Konzentration von 50 bis 1000 p.p.b. mit einer relativen Standard-abweichung von 5.0% und Eisen bei einer Konzentration von 50∼1000 p.p.d. mit einer relativen Standardabweichung von 6.1% gemessen.

• Proceedings of the Korean Vacuum Society Conference
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• 2005.02a
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• pp.48-48
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• 2005

• Korean Journal of Materials Research
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• v.18 no.6
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• pp.339-346
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• 2008

Single-crystal $ZnIn_2S_4$ layers were grown on a thoroughly etched semi-insulating GaAs (100) substrate at $450^{\circ}C$ with a hot wall epitaxy (HWE) system by evaporating a $ZnIn_2S_4$ source at $610^{\circ}C$. The crystalline structures of the single-crystal thin films were investigated via the photoluminescence (PL) and Double-crystal X-ray rocking curve (DCRC). The temperature dependence of the energy band gap of the $ZnIn_2S_4$ obtained from the absorption spectra was well described by Varshni's relationship, $E_g(T)=2.9514\;eV-(7.24{\times}10^{-4}\;eV/K)T2/(T＋489K)$. After the as-grown $ZnIn_2S_4$ single-crystal thin films was annealed in Zn-, S-, and In-atmospheres, the origin-of-point defects of the $ZnIn_2S_4$ single-crystal thin films were investigated via the photoluminescence (PL) at 10 K. The native defects of $V_{Zn}$, $V_S$, $Zn_{int}$, and $S_{int}$ obtained from the PL measurements were classified as donor or acceptor types. Additionally, it was concluded that a heat treatment in an S-atmosphere converted $ZnIn_2S_4$ single crystal thin films into optical p-type films. Moreover, it was confirmed that In in $ZnIn_2S_4$/GaAs did not form a native defects, as In in $ZnIn_2S_4$ single-crystal thin films existed in the form of stable bonds.

• Archives of Pharmacal Research
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• v.13 no.1
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• pp.19-23
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• 1990

A series of hexahydro-s-triazine derivative were prepard. Cytotoxic activity testing using mouse leukemia cells (p 388) and antimicrobial testing indicated that the compounds which contain isoxazolyl moiety higher activity than those containing other hetercyclic moieties.

• Fashion & Textile Research Journal
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• v.5 no.4
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• pp.389-394
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• 2003

Dyeing properties of silk fabric with leaf Mustard was investigated the relation with pH variation, mordants, mordant method. K/S value shows the following sequence: pH 3>pH 5>pH 7>pH 9. K/S value shows high in post mordant conditions. Silk fabric shows the green, blue tone according to mordants(Al, Cu, Fe mordants). The tannic acid treatment silk fabric shows higher than the nontannic acid treatment silk fabric in K/S value. Lighting fastness of tannic acid treatment silk fabric shows better than that of nontannic acid treatment in Cu, Fe mordants. Water fastness of tannic acid treatment silk fabric was wholly improved. Tannic acid treatment improved dyeing properties of silk fabric with leaf Mustard.

• Preventive Nutrition and Food Science
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• v.19 no.2
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• pp.75-81
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• 2014

This study was conducted to investigate the effects of cranberry power on antioxidant defense system in rats fed an atherogenic diet and injected with lipopolysaccharide (LPS). Sprague-Dawley rats were divided into the following 5 groups: normal diet+saline (NS), atherogenic diet+saline (AS), atherogenic diet+LPS (AL), atherogenic diet with 5% cranberry powder+LPS (AL-C5), and atherogenic diet with 10% cranberry powder+LPS (AL-C10). Total antioxidant status measured by ferric reducing ability of plasma (FRAP) was significantly reduced by LPS injection (24%) and was restored by the cranberry powder treatment (P<0.05). In addition, the mean level of plasma total phenolics was significantly decreased by LPS injection (P<0.05) and tended to be increased when cranberry powder was incorporated in to the diet. Activity of serum superoxide dismutase (SOD) tended to be lowered by LPS injection and declined further in cranberry powder fortified groups. Overall results indicate that dietary cranberry powder may provide appropriate antioxidants to counter the diminished antioxidant status induced by exposing hypercholesterolemic rats to LPS.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.04a
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• pp.5-8
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• 2004

We have investigated equivalent-circuit analysis of organic light-emitting diodes using frequency-dependent response of $ITO/Alq_3(60nm)/Al$ device at two different bias voltages. Complex impedance Z of the device was measured in the frequency range of 40Hz~1MHz. A Cole-Cole plot shows that there are two dielectric relaxations at the bias below turn-on voltage, and one relaxation at the bias above turn-on voltage. We are able to interpret the frequency-dependent response in terms of equivalent-circuit model of contact resistance $R_s$ in series with parallel combination of resistance $R_p$ and capacitance $C_p$. We have obtained contact resistance $R_s$ around $90{\Omega}$, mainly from the ITO anode.