• 제목/요약/키워드: rutile $TiO_2$(110)

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Photo-catalytic Properties of Nanotubes Synthesized using TiO2 Nanoparticles

  • Kim, Hyun;Kim, Dong Yun;Yang, Bee Lyong
    • 한국세라믹학회지
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    • 제55권3호
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    • pp.239-243
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    • 2018
  • Up to now, microstructure changes of photocatalysts have been studied to improve photocatalytic activity. Especially, to improve the adsorption of reactants and reactive sites, porous and fine crystal structures have received much attention because of their large specific surface area. In this study, $TiO_2$ nanotubes were synthesized by hydrothermal method using $TiO_2$ nanoparticles; nanotubes were evaluated by oxidized methylene blue reduction test. Using synthesized $TiO_2$ nanotubes, results of TEM showed that the $TiO_2$ nanoparticles were changed into folding sheets and nanotubes. XRD results showed that the peaks of the nanoparticles almost disappeared and only the rutile (110) and anatase (200) peaks were observed. Comparison of photocatalytic properties of nanoparticles and nanotube structures was performed by measuring the UV-vis absorbance with reducing oxidized methylene blue. As a result, the reduction rate of nanotubes was found to be $0.24{\mu}mol/s$, which was 2.6 times higher than the rate of reduction of nanoparticles.

Deposition of ZrO$_2$ and TiO$_2$ Thin Films Using RF Magnet ron Sputtering Method and Study on Their Structural Characteristics

  • Shin, Y.S.;Jeong, S.H.;Heo, C.H.;Bae, I.S.;Kwak, H.T.;Lee, S.B.;Boo, J.H.
    • 한국표면공학회지
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    • 제36권1호
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    • pp.14-21
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    • 2003
  • Thin films of ZrO$_2$ and TiO$_2$ were deposited on Si(100) substrates using RF magnetron sputtering technique. To study an influence of the sputtering parameters, systematic experiments were carried out in this work. XRD data show that the $ZrO_2$ films were mainly grown in the [111] orientation at the annealing temperature between 800 and $1000^{\circ}C$ while the crystal growth direction was changed to be [012] at above $1000^{\circ}C$. FT-IR spectra show that the oxygen stretching peaks become strong due to $SiO_2$ layer formation between film layers and silicon surface after annealing, and proved that a diffusion caused by either oxygen atoms of $ZrO_2$ layers or air into the interface during annealing. Different crystal growth directions were observed with the various deposition parameters such as annealing temperature, RF power magnitude, and added $O_2$ amounts. The growth rate of $TiO_2$ thin films was increased with RF power magnitude up to 150 watt, and was then decreased due to a sputtering effect. The maximum growth rate observed at 150 watt was 1500 nm/hr. Highly oriented, crack-free, stoichiometric polycrystalline $TiO_2$<110> thin film with Rutile phase was obtained after annealing at $1000^{\circ}C$ for 1 hour.