• Title/Summary/Keyword: roughness value

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Development of Rustling Sound Generator Using Reciprocating Motion and Evaluation of Its Fabric Sound (왕복운동에 의한 직물마찰음발생장치의 개발 및 이를 이용한 직물소리 평가)

  • Kim Chun-Jeong;Cho Gil-Soo
    • Science of Emotion and Sensibility
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    • v.9 no.2
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    • pp.133-140
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    • 2006
  • In order to investigate the sensation of the fabric sound simulating the real wear-condition, the fabric sound simulator using reciprocating friction was developed. Fabric sounds from 5 specimen were generated by the fabric sound simulator and recorded using high performance microphone. Physical sound parameters of fabrics including level pressure of total sound (LPT), level range (${\Delta}L$), and frequency differences (${\Delta}f$) were calculated. For psychological evaluation, seven adjectives for sound (softness, loudness, sharpness, clearness, roughness, highness, and pleasantness) were used as the semantic differential scale. Fabric sounds by reciprocating friction of nylon taffeta and polyester leno had the highest value of LPT and evaluated as loud, sharp, rough, and unpleasant while polyester ultra suede and silk crepe de chine haying the lower LPT and ${\Delta}f$ were perceived as soft and quite. Comparing with fabric sound by one-way friction, fabric sound by reciprocation friction was perceived as more sharp, loud, and rough. LPT was also the most important factor affecting the sensation of the fabric sound by reciprocating friction.

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Shear Bond Strength of Veneering Ceramic and Zirconia Core according to the Surface Treatments (지르코니아 코어의 표면처리 방법에 따른 도재 축성의 전단결합강도)

  • Sin, Cheon-Ho;Hwang, Seong-Sig;Han, Gyeong-Soon
    • Journal of dental hygiene science
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    • v.13 no.4
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    • pp.487-492
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    • 2013
  • This study aimed to illuminate the correlatives between the surface processing of Zirconia core and the shear bond strength. The specimens were made by precipitating for two minutes in color liquid and drying to produce a colored Zirconia core following the manufacturer's instructions. The specimens were divided into 4 subgroups according to the surface treatment-sandblasted+liner treatment, SLT group; sandblasted treatment, ST group; liner treatment, LT group; non treatment (control), NT group. The specimens were put on the device with regard to ISO/TS 11405, then tested the shear bond strength with 1 mm shearing speed per minute using the Instron multi-purpose tester. The collected data was analysed by one way ANOVA and t-test. After applying the liner and sandblast to the Zirconia core, shear bond strength value were SLT (23.19 MPa), ST (21.17 MPa), LT (20.53 MPa) and NT (16.46 MPa) in the order. There was a significant difference in the surface roughness between NT and ST group (p<0.001), and in the compressive shear bond strength between NT and SLT group (p<0.05). Therefore, sandblasted plus liner treatment on pre-sintered substructure increased the bond strength of veneering ceramic, compared with other surface treatments.

Degradation from Polishing Damage in Ferroelectric Characteristics of BLT Capacitor Fabricated by Chemical Mechanical Polishing Process (화학적기계적연마 공정으로 제조한 BLT Capacitor의 Polishing Damage에 의한 강유전 특성 열화)

  • Na, Han-Yong;Park, Ju-Sun;Jung, Pan-Gum;Ko, Pil-Ju;Kim, Nam-Hoon;Lee, Woo-Sun
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2008.06a
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    • pp.236-236
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    • 2008
  • (Bi,La)$Ti_3O_{12}$(BLT) thin film is one of the most attractive materials for ferroelectric random access memory (FRAM) applications due to its some excellent properties such as high fatigue endurance, low processing temperature, and large remanent polarization [1-2]. The authors firstly investigated and reported the damascene process of chemical mechanical polishing (CMP) for BLT thin film capacitor on behalf of plasma etching process for fabrication of FRAM [3]. CMP process could prepare the BLT capacitors with the superior process efficiency to the plasma etching process without the well-known problems such as plasma damages and sloped sidewall, which was enough to apply to the fabrication of FRAM [2]. BLT-CMP characteristics showed the typical oxide-CMP characteristics which were related in both pressure and velocity according to Preston's equation and Hernandez's power law [2-4]. Good surface roughness was also obtained for the densification of multilevel memory structure by CMP process [3]. The well prepared BLT capacitors fabricated by CMP process should have the sufficient ferroelectric properties for FRAM; therefore, in this study the electrical properties of the BLT capacitor fabricated by CMP process were analyzed with the process parameters. Especially, the effects of CMP pressure, which had mainly affected the removal rate of BLT thin films [2], on the electrical properties were investigated. In order to check the influences of the pressure in eMP process on the ferroelectric properties of BLT thin films, the electrical test of the BLT capacitors was performed. The polarization-voltage (P-V) characteristics show a decreased the remanent polarization (Pr) value when CMP process was performed with the high pressure. The shape of the hysteresis loop is close to typical loop of BLT thin films in case of the specimen after CMP process with the pressures of 4.9 kPa; however, the shape of the hysteresis loop is not saturated due to high leakage current caused by structural and/or chemical damages in case of the specimen after CMP process with the pressures of 29.4 kPa. The leakage current density obtained with positive bias is one order lower than that with negative bias in case of 29.4 kPa, which was one or two order higher than in case of 4.9 kPa. The high pressure condition was not suitable for the damascene process of BLT thin films due to the defects in electrical properties although the better efficiency of process. by higher removal rate of BLT thin films was obtained with the high pressure of 29.4 kPa in the previous study [2].

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Effects of DC Biases and Post-CMP Cleaning Solution Concentrations on the Cu Film Corrosion

  • Lee, Yong-K.;Lee, Kang-Soo
    • Corrosion Science and Technology
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    • v.9 no.6
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    • pp.276-280
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    • 2010
  • Copper(Cu) as an interconnecting metal layer can replace aluminum (Al) in IC fabrication since Cu has low electrical resistivity, showing high immunity to electromigration compared to Al. However, it is very difficult for copper to be patterned by the dry etching processes. The chemical mechanical polishing (CMP) process has been introduced and widely used as the mainstream patterning technique for Cu in the fabrication of deep submicron integrated circuits in light of its capability to reduce surface roughness. But this process leaves a large amount of residues on the wafer surface, which must be removed by the post-CMP cleaning processes. Copper corrosion is one of the critical issues for the copper metallization process. Thus, in order to understand the copper corrosion problems in post-CMP cleaning solutions and study the effects of DC biases and post-CMP cleaning solution concentrations on the Cu film, a constant voltage was supplied at various concentrations, and then the output currents were measured and recorded with time. Most of the cases, the current was steadily decreased (i.e. resistance was increased by the oxidation). In the lowest concentration case only, the current was steadily increased with the scarce fluctuations. The higher the constant supplied DC voltage values, the higher the initial output current and the saturated current values. However the time to be taken for it to be saturated was almost the same for all the DC supplied voltage values. It was indicated that the oxide formation was not dependent on the supplied voltage values and 1 V was more than enough to form the oxide. With applied voltages lower than 3 V combined with any concentration, the perforation through the oxide film rarely took place due to the insufficient driving force (voltage) and the copper oxidation ceased. However, with the voltage higher than 3 V, the copper ions were started to diffuse out through the oxide film and thus made pores to be formed on the oxide surface, causing the current to increase and a part of the exposed copper film inside the pores gets back to be oxidized and the rest of it was remained without any further oxidation, causing the current back to decrease a little bit. With increasing the applied DC bias value, the shorter time to be taken for copper ions to be diffused out through the copper oxide film. From the discussions above, it could be concluded that the oxide film was formed and grown by the copper ion diffusion first and then the reaction with any oxidant in the post-CMP cleaning solution.

The Effect of Magnetic Field Annealing on the Structural and Electromagnetic Properties of Bising $Co_{82}Zr_6Mo_{12}$ Thin Films for Magnetoresistance Elements (자기저항소자의 바이어스용 $Co_{82}Zr_6Mo_{12}$ 박막의 구조 및 전자기적 특성에 미치는 자장 중 열처리의 영향)

  • 김용성;노재철;이경섭;서수정;김기출;송용진
    • Journal of the Korean Magnetics Society
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    • v.9 no.2
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    • pp.111-120
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    • 1999
  • The effects of annealing in rotating magnetic field after deposition on electromagnetic properties of $Co_{82}Zr_6Mo_{12}$ thin (200~1200 $\AA$) films prepared by RF-magnetron sputtering were investigated in terms of microstructure and surface morphology. The coercivity decreases, but $4{\pi}M_5$ does not change with increasing the film thickness. The coercivity of the films was decreased below 300 $^{\circ}C$ due to stress relief and decreasing the surface roughness, while increased at 400 $^{\circ}C$ due to partial grain growth. And then, $4{\rho}M_5$ was almost independent of annealing temperatures below 200 $^{\circ}C$, but increased from 7.4 kG to 8.0 kG at 300 $^{\circ}C$ and at 400 $^{\circ}C$, which was caused by precipitation and growth of fine Co particles in the films. The electrical resistivity of films was decreased with increasing annealing temperatures and the magnetoresistance was a negative value of nearly 0 $\mu$$\Omega$cm. After annealing at 300 $^{\circ}C$, maximum effective permeability was 1200 to the hard axis of the thin films according to high frequency change. Considering the practical application of biasing layers of the films for magnetoresistive heads, optimal annealing conditions was obtained after one hour annealing at 300 $^{\circ}C$ in 400 Oe rotating magnetic field.

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The Characteristics of Mortar According to the Water Cement Ratio and Mudflats Replacement Ratio (물-시멘트비 및 갯벌 치환율에 따른 모르타르의 특성)

  • Yang, Seong-Hwan;Lee, Heung-Yeol
    • Journal of the Korea Institute of Building Construction
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    • v.17 no.3
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    • pp.227-234
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    • 2017
  • This research analyzes the properties of mortar following the rise in water-cement ratio and applicability as an eco-friendly construction supply by using the mudflats of a dredged arena as a substitute for aggregate. The results of a experiment of the flow showed that the flow value decreases as the amount of mudflats increases. A test for chloride content showed that the chloride content increases with the amount of mudflats. In the compression of specimen mixed with mudflat and the testing of tensile strength, the strength weakened as the addition ratio of mudflats rose. However, with 14-day strength as the standard, most specimen showed more strength than the plain, and 14-day strength was higher than 28-day strength. It appears to be experimental error in the mixing process from the viscosity and cohesion of mudflats, and it is considered that there will be a need for an experiment on mixing methods of mudflats in the future. The compressive strength of this research was the strongest with 70% in water-cement ratio, and the tensile strength was strongest with 80% in water-cement ratio. In the evaluation of surface analysis, 70% water-cement ratio, which is finest in strength, mixing, and compactness, was selected to analyze the roughness of the surface, and the results showed that the surface became smoother as the addition ratio of mudflats increases. In conclusion, it appears that 70% water-cement ratio is the optimal mixing ratio for mortar and 10 to 30% addition ratio of mudflats the optimal ratio. It also appears that the application of interior finishing material like bricks and tiles and interior plastering material using the mudflats are possible.

A Comparison Study on the Design of Dynamic Response appears on Bridge as operation of Light Railway Train (한국형 경량 전철 주행시 동적 응답 처리의 설계 기준 비교 연구)

  • Yeon, sang-ho;Kang, sung-won
    • Proceedings of the Korea Contents Association Conference
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    • 2008.05a
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    • pp.792-795
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    • 2008
  • AGT system is a kind of light railway train. AGT system use of concrete track and rubber tire, so it can be reduce the noise and vibration, compare to the normal train system. And, the dynamic responses of normal bridge are influenced by the dynamic characteristics of bridge, the speed of vehicle and the surface roughness of railway. But the AGT system bridge is influenced not only the above facts but also the guiderail unevenness, because, AGT vehicle steered by guiderail. So, in this study, optimized service condition is suggested for the design and operation of AGT system, by the means of experimental study. The experiments are executed for PSC bridge with length of 30m, at the AGT test line in Kyongsan. The test results are compared and investigated according to the prominence. In the test result, the guiderail prominence influenced on the dynamic response of bridge. It shows a increase as compared with no guiderail prominence in the dynamic response value acceleration, displacement, stain.

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A Study on the Preparation of Powder Coatings Containing Halogen-Free Flame Retardant and Fire Safety (Halogen-Free 난연제를 포함하는 파우더 코팅소재 제조 및 화재안전성 연구)

  • Lee, Soon-Hong;Chung, Hwa-Young;Kim, Dae-In;Noh, Tae-Joon
    • Journal of the Korean Society of Safety
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    • v.26 no.4
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    • pp.47-58
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    • 2011
  • Halogen free intumescent flame retardants(IFRS), such as the mixture of melamine phosphate(MP) and char forming agents(pentaerythritol(PER), di-pentaerythritol(DiPER), tris(2-hydroxyethyl) isocyanurate(THEIC)), were prepared and characterized. Polypropylene(PP)/$IFR_S$ composites were also prepared in the presence of ethylene diamine phosphate(EDAP) as a synergist and used into flame retardant PP powder coatings. Thermoplastic PP powder coatings at 20 wt% flame retardant loading were manufactured by extruded and then mechanical cryogenic crushed to bring them in fine powder form. These intumescent flame retardant powder coatings($IFRPC_S$) were applied on mild steel surface for the purpose of protection and decorative. It is a process in which a $IFRPC_S$ particles coming in contact with the preheated mild steel surface melt and form a thin coating layer. The obtained MP flame retardant was analyzed by utilizing FTIR, solid-state $^{31}P$ NMR, ICP, EA and PSA. The mechanical properties as tensile strength, melt flow index(MFI) and the thermal property as TGA/DTA and the fire safety characteristics as limiting oxygen index(LOI), UL94 test, SEM were used to investigate the effect of $IFRPC_S$. The experimental results show that the presence of $IFR_S$ considerably enhanced the fire retardant performances as evidenced by the increase of LOI values 17.3 vol% and 32.6 vol% for original PP and $IFRPC_S$-3(PP/MP-DiPER/EDAP), respectively, and a reduction in total flaming combustion time(under 15 sec) in UL94 test of $IFRPC_S$. The prepared $IFRPC_S$-3 have good comprehensive properties with fire retardancy 3.2 mm UL94 V-0 level, LOI value 32.6%, tensile strength $247.3kg/cm^2$, surface roughness Ra $0.78{\mu}m$, showing a better application prospect. Through $IFRPC_S$-2(PP/MP-PER/EDAP) and $IFRPC_S$-3 a better flame retardancy than that of the $IFRPC_S$-1(PP/MP/EDAP) was investigated which was responsible for the formed more dense and compact char layer, improved synergy effect of MP and PER/DiPER.

Influence of the DC Power on the Electrical and Optical Properties of ITO Thin Films Deposited on Nb2O5/SiO2 Buffer Layer (Nb2O5/SiO2 버퍼층위에 증착한 ITO 박막의 전기적 및 광학적 특성에 DC 파워가 미치는 영향)

  • Joung, Yang-Hee;Kang, Seong-Jun
    • The Journal of the Korea institute of electronic communication sciences
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    • v.14 no.2
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    • pp.297-302
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    • 2019
  • In this study, we deposited ITO thin films on buffer layer of $Nb_2O_5(8nm)/SiO_2(45nm)$ using DC magnetron sputtering method and investigated its electrical and optical properties with various DC powers(100~400 W). The surface of the ITO thin film was observed by AFM. All thin films had defected free surface such as pinholes and cracks. The thin film deposited at DC power of 200 W exhibited the smallest surface roughness of 1.431nm. As a result of electrical and optical measurements, the ITO thin film deposited at DC power of 200 W which showed the lowest resistivity of $3.03{\times}10^{-4}{\Omega}-cm$. The average transmittance in the visible light region(400 to 800 nm) and the transmittance at the wavelength of 550nm were found to be 85.8% and 87.1%, respectively. The chromaticity(b*) was also a relatively good value as 2.13. The figure of merit obtained from the sheet resistance of the ITO thin film, the average transmittance in the visible light region and the transmittance at the wavelength of 550nm were the best values of $2.50{\times}10^{-3}{\Omega}^{-1}$ and $2.90{\times}10^{-3}{\Omega}^{-1}$ at a DC power of 200W, respectively.

Electrical and Optical Properties of ITO Thin Films with Various Thicknesses of SiO2 Buffer Layer for Capacitive Touch Screen Panel (정전용량식 터치스크린 패널을 위한 SiO2 버퍼층 두께에 따른 ITO 박막의 전기적 및 광학적 특성)

  • Yeun-Gun, Chung;Yang-Hee, Joung;Seong-Jun, Kang
    • The Journal of the Korea institute of electronic communication sciences
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    • v.17 no.6
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    • pp.1069-1074
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    • 2022
  • In this study, we prepared ITO thin films on the Nb2O5/SiO2 double buffer layer and investigated electrical and optical properties according to the change of SiO2 buffer layer thickness (40~50nm). The ITO thin film fabricated on the Nb2O5/SiO2 double buffer layer exhibited a broad surface roughness with a small value ranging of 0.815 to 1.181nm, and the sheet resistance was 99.3 to 134.0Ω/sq. It seems that there is no problem in applying the ITO thin film to a capacitive touch screen panel. In particular, the average transmittance in the short-wavelength (400~500nm) region and the chromaticity (b*) of the ITO thin film deposited on the Nb2O5(10nm)/SiO2(40nm) double buffer layer showed significantly improved results as 83.58% and 0.05, respectively, compared to 74.46% and 4.28 of ITO thin film without double buffer layer. As a result, it was confirmed that optical properties such as transmittance in the short-wavelength region and chromaticity were remarkably improved due to the index matching effect in the ITO thin film with the Nb2O5/SiO2 double buffer layer.