• Title/Summary/Keyword: root gap

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Studies on safety of Hwanggum (Scutellaria Radix) aqua-acupuncture (황금 한약침제제의 안전성에 대한 연구)

  • Go, Byeong-Seop;Park, Gap-Ju;An, Sang-U;Ju, Hye-Jeong;Ma, Jin-Yeol;Jeon, Won-Gyeong
    • Journal of Pharmacopuncture
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    • v.1 no.1
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    • pp.103-125
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    • 1997
  • In order to study of safety, Hwanggum(黃芩) aqua-acupuncture was prepared by boiling extract and filtration. This study was performed to determine the toxic effects of graded dose levels and effects of Scutellaria Root after repeated administration(14days). From these results, Hwanggum(黃芩) aqua-acupuncture was quite sag in male and female rats.

Stress Analysis of Double T-Welded Joints Considering External Forces (외력을 고려한 양면 T-용접이음부의 음력해석)

  • 김성환;방한서;방희선;송관형
    • Journal of Welding and Joining
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    • v.19 no.2
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    • pp.215-220
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    • 2001
  • In the T-joint welding, the complete penetration joint which is obtained by groove welding with edge preparation is generally required thor the safety and reliability of structures but this way have the some defects such as increase of working time, consumed welding electrode quantity and large welding deformation. If there is no probrem, in the strength, T-joint welding without edge preparation will be profitably understood in the economical and welding deformation side. In this paper, we performed the finite element analysis to understand the characteristics of welding residual stresses on two models, complete penetration joint have the edge preparation and incomplete penetration joint without edge preparation, respectively. Especially, we observed the relation between welding residual stress distributed on the notch of gap in the root and external force in the incomplete penetration joint without edge preparation.

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Effect of base metal and welding heat input on the properties of low temperature steel welds made by Electro Gas Welding (저온용 강재 Electro Gas 용접부 물성에 미치는 모재와 용접 입열의 영향)

  • Sung, Hee-Joon;Goo, Yeon-Baeg;Kim, Kyeong-Ju
    • Proceedings of the KWS Conference
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    • 2009.11a
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    • pp.51-51
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    • 2009
  • In order to understand the properties of high heat input welds made by electro gas welding, two kinds of low temperature steel were welded. Welding heat inputs were controlled by width of root gap and ranged from 118 to 143kJ/cm. Chemical composition and micro-structural analysis were performed. To understand low temperature impact properties, Charpy impact test was conducted at several temperatures. The results were summarized as follows; 1) Grain size of weld metal and heat affected zone was increased with an increase in welding heat input. 2) Impact test values at fusion line were severely fluctuated regardless of base metals, showing enormous difference among the values at the same test temperature.

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The Characteristics of EBW for strengthened austenitic stainless steel (강화 오스테나이트 스테인레스강의 전자빔 용접 특성)

  • 정원희;김용재;정인철
    • Proceedings of the KWS Conference
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    • 2003.05a
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    • pp.87-89
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    • 2003
  • The yield strengths of austenitic stainless steel have been approximately doubled by increasing the nitrogen content. But, the increasing the nitrogen cause of increase the pressure of metal vapor inside the keyhole in electron beam welding. During welding, eruptions of keyhole often occur that cause excessive spatter, concavity, and porocity in the weld zone. Additionally the fast evaporation of nitrogen content cause of decrease the strength of weld zone. Therefore in this paper, we investigated of the weldability of electron beam welding and the change of chemical content after welding for strengthened austenitic stainless steel, measured the deformation scale of both of electron beam and narrow gap TIG and the spike fluctuation in the root.

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An Acquisition and Analysis Equipment of Dynamic/Static Data on a Rotating Vibration (회전체 진동 데이터의 AC/DC 성분 데이터 획득 및 분석 장치)

  • Lee, Jung Suk;Ryu, Deung Ryeol;Lee, Cheol
    • Journal of Korea Society of Digital Industry and Information Management
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    • v.5 no.4
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    • pp.127-137
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    • 2009
  • This paper is proposed that in-output Digital module is acquired a vibration signal of a rotating machinery by Data Acquisition System. The module is designed to get ride of nose through low pass filter on the vibration signal from sensors and set the gain value for being able to sampling AC to DC, and also the sampled data by sampler and the conversed data by DIP/FPGA is supplied to the analyzer for analysis at a software tool. The DIP(Digital Signal Processor) of the Digital input/output Board makes Average voltage, Peak to Peak voltage, RMS(Root Mean Square) and Gap voltage, also FFT(Fast Fourier Transform) for rotating vibration diagnosis.

Echocardiographic parameters and indices in 23 healthy Maltese dogs

  • Tsai, Chih-Hung;Huang, Chao-Chun;Ho, Chia-Chi;Claretti, Marta
    • Journal of Veterinary Science
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    • v.22 no.5
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    • pp.60.1-60.9
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    • 2021
  • Background: Echocardiography is a primary tool used by veterinarians to evaluate heart diseases. In recent years, various studies have targeted standard echocardiographic values for different breeds. Reference data are currently lacking in Maltese dogs and it is important to fill this gap as this breed is predisposed to myxomatous mitral valve disease, which is a volume overload disease. Objectives: To establish the normal echocardiographic parameters for Maltese dogs. Methods: In total, 23 healthy Maltese dogs were involved in this study. Blood pressure measurements, thoracic radiography, and complete transthoracic echocardiography were performed. The effects of body weight, age and sex were evaluated, and the correlations between weight and linear and volumetric dimensions were calculated by regression analysis. Results: The mean vertebral heart size was 9.1 ± 0.4. Aside from the ejection fraction, fractional shortening, and the left atrial to aorta root ratio, all the other echocardiographic parameters were significantly correlated with weight. Conclusion: This study describes normal echocardiographic parameters that may be useful in the echocardiographic evaluation of Maltese dogs.

Studies of the Effects of Acupuncture Stimulation at Huatuo Jiaji(EX B2) Points on Axonal Regeneration of Injured Sciatic Nerve in the Rats (화타협척혈 침자극에 의한 손상 말초신경의 재생효과에 관한 연구)

  • Kim, Dae-Feel;Park, Young-Hoi;Keum, Dong-Ho
    • Journal of Korean Medicine Rehabilitation
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    • v.18 no.4
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    • pp.39-61
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    • 2008
  • Objectives : The present study was performed to investigate whether acupuncture stimulation in the rats affected regeneration properties of the injured sciatic nerve. A differential effect of acupuncture stimulation on the one point near the spinal nerve root controlling sciatic nerve activity and the other point in the peripheral area subordinated by injured nerve was compared. Materials and Methods: Rat sciatic nerves were injured by crush, and the effects on axonal regeneration on injured sciatic nerves were evaluated by acupuncture stimulation at two different regions. In proximal acupuncture stimulation group, acupuncture stimulation was performed on Huatuo Jiaji(EX B2) points located from L5 to S1 vertebral levels to stimulate the nearest spinal nerve root that innervates sciatic nerves. In distal acupuncture stimulation group, acupuncture stimulation was performed on Zusanli(ST 36) and Weizhong(BL 40) points to stimulate at peripheral area dominated by injured sciatic nerves. Acupuncture stimulation was given every other days for 1 or 2 weeks. Sciatic nerve tissues collected from acupuncture stimulation experimental groups, injury control group, and intact animal group were used for protein analysis by Western blotting or Hoechst nuclear staining. To determine axonal regeneration, Dil fluorescence dye was injected into the sciatic nerve 0.5 cm distal to the injury site in individual animal groups and Dil-labeled cells by retrograde tracing were measured in the DRG at lumbar 5 or in the spinal cord. DRG sensory neurons prepared from individual animal groups were used to measure the extent of neurite outgrowth and for immunofluorescence staining with anti-GAP-43 antibody. Results : Animal groups given proximal or distal acupuncture stimulation showed upregulation of GAP-43 and Cdc2 protein levels in the sciatic nerve at 7 days after injury. Cdk2 protein levels were strongly induced by nerve injury, but did not show changes by acupuncture stimulation. Phospho-Erk1/2 protein levels were elevated by acupuncture stimulation above those present in the injury control animals. These increase in regeneration-associated protein levels appeared to be related with increase cell proliferation in the injured sciatic nerves. Hoechst 33258 staining of sciatic nerve tissue to visualize nuclei of individual cells showed increased Schwann cell number in the distal portion of the injured nerve 7 and 14 days after injury and further increases by acupuncture stimulation particularly at the proximal position. Measurement of axonal regeneration by retrograde tracing showed significantly increased Dil-labeled cells in proximal acupuncture stimulation group compared to distal acupuncture stimulation group and injury control group. Finally, an evaluation of axonal regeneration by retrograde tracing showed increased number of Dil labeled cells in the DRG at lumbar 5 or in the ventral horn of the spinal cord at lower thoracic level at 7 days after nerve injury. Conclusions : The present data show that the proximal acupuncture stimulation at Huatuo Jiaji(EX B2) points governing injured sciatic nerves was more effective for axonal regeneration than the distal acupuncture stimulation. Further studies on functional recovery or associated molecular mechanisms should be critical for developing animal models and clinical applications.

Distribution of Lipids in Panax ginseng Root (인삼근의 지질 분포)

  • Kim, U-Gap;Lee, Chang-Seop;Jeong, Byeong-Gap
    • Journal of Ginseng Research
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    • v.12 no.2
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    • pp.93-103
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    • 1988
  • Diversities of lipid compositions according to the morphological differences of the Panax ginseng root were studied by means of column, thin layer, gas-liquid chromate-graphies and histochemical stainings. Purified lipids from various parts were 1.08-2.23% of dry weight, of which 64.2-73.5% were neutral lipids, 15.4-17.4% were glycolipids and 10.4-19.2% were phospholipids. Especially the contents of neutral lipids were highest in cortex, suggesting to be the presence of lipid ducts only in cortex. Triglycerides, sterol esters and hydrocarbons were abundant in the neutral lipid fractions. Twelve components were identified in the periderm and cortex, but unidentified II, IV and V components were not present in the medulla. The major components of glycolipid freactions were sterol glycoside, digalactosyl diglyceride and esterified sterol glucoside. Phosphatidyl glycerol, phosphatidyl choline and phosphatidyl ethanolamine were major components of phospholipid fractions, And phosphatidyl choline was extreamly much in the periderm and medulla, but phosphatidyl glycerol was largest in quantity in the cortex. Eighteen kinds of fatty acids were identified in the neutral lipid, glycolipid and phospholipid fractions. Linoleic, palmitic, oleic and linolnic acids were the main components of fatty acids. The contents of saturated fatty acids, unsaturated fatty acids and essential fatty acids of each three fractions were different one another regardless of the Periderm, cortex and medulla.

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Process effects on morphology, electrical and optical properties of a-InGaZnO thin films by Magnetic Field Shielded Sputtering

  • Lee, Dong-Hyeok;Kim, Gyeong-Deok;Hong, Mun-Pyo
    • Proceedings of the Korean Vacuum Society Conference
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    • 2016.02a
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    • pp.217-217
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    • 2016
  • The amorphous InGaZnO (a-IGZO) is widely accepted as a promising channel material for thin-film transistor (TFT) applications owing to their outstanding electrical properties [1, 2]. However, a-IGZO TFTs have still suffered from their bias instability with illumination [1-4]. Up to now, many researchers have studied the sub-gap density of states (DOS) as the root cause of instability. It is well known that defect states can influence on the performances and stabilities of a-IGZO TFTs. The defects states should be closely related with the deposition condition, including sputtering power, and pressure. Nevertheless, it has not been reported how these defects are created during conventional RF magnetron sputtering. In general, during conventional RF magnetron sputtering process, negative oxygen ions (NOIs) can be generated by electron attachment in oxygen atom near target surface and then accelerated up to few hundreds eV by a self-bias; at this time, the high energy bombardment of NOIs induce defects in oxide thin films. Recently, we have reported that the properties of IGZO thin films are strongly related with effects of NOIs which are generated during the sputtering process [5]. From our previous results, the electrical characteristics and the chemical bonding states of a-IGZO thin films were depended with the bombardment energy of NOIs. And also, we suggest that the deep sub-gap states in a-IGZO as well as thin film properties would be influenced by the bombardment of high energetic NOIs during the sputtering process.In this study, we will introduce our novel technology named as Magnetic Field Shielded Sputtering (MFSS) process to prevent the NOIs bombardment effects and present how much to be improved the properties of a-IGZO thin film by this new deposition method. We deposited a-IGZO thin films by MFSS on SiO2/p-Si and glass substrate at various process conditions, after which we investigated the morphology, optical and electrical properties of the a-IGZO thin films.

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A study on the InSb crystal growth and the Zn diffusion (InSb 결정 성장과 Zn 확산에 관한 연구)

  • Kim, Back-Nyoun;Song, Bok-Sik;Moon, Dong-Chan;Kim, Seon-Tae
    • Proceedings of the KIEE Conference
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    • 1992.07b
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    • pp.816-819
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    • 1992
  • Binary compound semiconductor InSb crystal which has direct-transition energy gap (0.17 ev) grown by vertical Bridgman method, then the electric-magnetic and optical properties of InSb crystal were surveyed. The growth rate of the crystals was 1mm/hr and the lattice constant $a_\circ$ of the grown crystal was 6.4863$\AA$. The electrical properties were examined by the Hall effect measurement with the van der Pauw method in the temperature range of 70$\sim$300K, magnetic field range of 500$\sim$10000 gauss. The undoped InSb crystal was n-type, the concentration and the electron mobility were 2$\sim$6 ${\times}$ $10^{16}$$\textrm{cm}^{-3}$ and carrier mobility was 6$\sim$2${\times}$$10^{4}$$cm^{2}$/v.sec at 300K, respectively. The carrier mobility was decreased with $T^{-1/2}$ due to the lattice scattering above 100K, and decreased by impurity scattering below100K. The magnetoresistance was increased 190% at 9000 gauss as compared with non-appliced magnetic field and the magnetoresistance was increased with increasing the magnetic field. Also, the Hall voltage was increased with increasing the magnetic field and decreasing the thickness of sample. The optical energy band gap of InSb at room temperature determined using the IR spectrometer was 0.167eV. The diffusion depth of Zn into InSb proportionally increased with the square root of diffusion time and the activation energy for Zn diffusion was 0.67eV. The temperature dependence of diffusion coefficient was $D=4.25{\times}10^{-3}$exp (-0.67/$K_BT$).

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