• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.05e
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• pp.92-95
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• 2003

In this paper, the emission properties of electrodeless fluorescent lamp were discussed using the inductively coupled plasma. To transmit the electromagnetic energy into the chamber, a RF power of 13.56MHz was applied to the antenna and considering the Ar gas pressure and the RF electric power change, the emission spectrum, Ar-I line, luminance were investigated. At this time the input parameter for ICP RF plasma, Ar gas pressure and RF power were applied in the range of 10~60m Torr, 10~300W respectively.

• Journal of the Semiconductor & Display Technology
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• v.14 no.4
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• pp.84-87
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• 2015

We have designed and fabricated two different RF-DC Converters called doubler for 5.8GHz Microwave Wireless Power Transmission. The doubler as RF-DC Converter makes the rectified voltage be doubled. We measured and compared voltages of the doublers with those of the previous full-wave rectifying RF-DC Converter. The doublers show rectified double voltages. However, the full-wave rectifying converter has a high efficiency due to the suppression of reflecting harmonics. The other fabricated doublers causes so many harmonics that they can't convert the low-power RF to the full DC. In this paper, we show that the different doublers doesn't double the rectifying voltages compared with those of the full-wave rectifying converter and give a reason about that.

• Proceedings of the International Microelectronics And Packaging Society Conference
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• 2001.11a
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• pp.171-177
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• 2001

The adhesion enhancement from inserting a RF bias-sputtered Cr layer between Cu and polyimide (PI) has been studied. The RF bias power applied in this study was ranged from 0 to 400 W. Without the RF bias, the peel strength, which measures the adhesion strength, was nearly o g/mm. As the RF power was increased, the peel strength rose up to ~130 g/mm at 200 W, which remained constant with further increase of the RF bias power. Cross-sectional transmission electron microscopy(TEM) was used to investigate the interfacial reaction between the Cr film and PI substrate during the bias sputtering. The Cr/PI interface without the application of RF dais showed a clean, sharp interface while the RF raised Cr/PI interface had about 10~30 nm thick atomistically mixed interlayer between the metal film and PI substrate. This interlayer appeared to have resulted from the implantation of high energy adatoms during the RF bias sputtering of Cr film. This mixed layer serves as an interlocking layer, which enhances adhesion between the metal and PI layers.

• Journal of Semiconductor Engineering
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• v.1 no.1
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• pp.13-30
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• 2020

Radio frequency (RF) energy harvesting technology have become a reliable and promising alternative to extend the lifetime of power-constrained wireless networks by eliminating the need for batteries. This emerging technology enables the low-power wireless devices to be self-sustaining and eco-friendly by scavenging RF energy from ambient environment or dedicated energy sources. These attributes make RF energy harvesting technology feasible and attractive to an extended range of applications. However, despite being the most reliable energy harvesting technology, there are several challenges (especially power conversion efficiency, output DC voltage and sensitivity) poised for the implementation of RF energy harvesting systems. In this article, a detailed literature on RF energy harvesting technology has been surveyed to provide guidance for RF energy harvesters design. Since signal strength of the received RF power is limited and weak, high efficiency state-of-the-art RF energy harvesters are required to design for providing sufficient DC supply voltage to wireless networks. Therefore, various designs and their trade-offs with comprehensive analysis for RF energy harvesters have been discussed. This paper can serve as a good reference for the researchers to catch new research topics in the field of RF energy harvesting.

• IEIE Transactions on Smart Processing and Computing
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• v.3 no.4
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• pp.221-225
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• 2014

Low power RF devices, such as RFID and Zigbee, are important for ubiquitous sensing. These devices, however, are powered by portable energy sources, such as batteries, which limits their use. To mitigate this problem, this study developed RF energy harvesting with W-CDMA for a low power RF device. Diodes are required with a low turn on voltage because the diode threshold is larger than the received peak voltage of the rectifying antenna (rectenna). Therefore, a Schottky diode HSMS-286 was used. A prototype of RF energy harvesting device showed the maximum gain of 5.8dBi for the W-CDMA signal. The 16 patch antennas were manufactured with a 10 dielectric constant PTFT board. In low power RF devices, the transmitter requires a step-up voltage of 2.5~5V with up to 35 mA. To meet this requirement, the Texas Instruments TPS61220 was used as a low input voltage step-up converter. From the evaluated result, the achievable incident power of the rectenna at 926mV to operate Zigbee can be obtained within a distance of 12m.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.08a
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• pp.203-203
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• 2010

Nano-crystalline Si thin films were deposited on polymer and glass by inductively coupled plasma (ICP) - assisted RF magnetron sputtering at low temperature in an argon and hydrogen atmosphere. Internal ICP coil was installed to increase hydrogen atoms dissociated by the induced magnetic field near the inlet of the working gases. The microstructure of deposited films was investigated with XRD, Raman spectroscopy and TEM. The crystalline volume fraction of the deposited films on polymer was about 70% at magnetron RF power of 600W and ICP RF power of 500W. Crystalline volume fraction was decreased slightly with increasing magnetron RF power due to thermal damage by ion bombardment. The diffraction peak consists of two peaks at $28.18^{\circ}$ and $47.10^{\circ}\;2{\theta}$ at magnetron RF power of 600W and ICP RF power of 500W, which correspond to the (111), (220) planes of crystalline Si, respectively. As magnetron power increase, (220) peak disappeared and a dominant diffraction plane was (111). In case of deposited films on glass, the diffraction peak consists of three peaks, which correspond to the (111), (220) and (311). As the substrate temperature increase, dominant diffraction plane was (220) and the thickness of incubation (amorphous) layer was decreased.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.16 no.4
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• pp.821-828
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• 2012

In this paper, we report that the differences between RF power levels can be improved in wavelength division multiplexing - radio over fiber (WDM-RoF) system by using a photonic crystal fiber. In a WDM-RoF system, each WDM channel experiences different received RF power level fluctuation in remote node (RN) because of wavelength-dependent dispersion. Since each WDM channel experiences different power fluctuation, the RF power fluctuation acts as a design constraint in viewpoint of network design. We designed a photonic crystal fiber to improve the effect of wavelength- dependent dispersion on RF power fluctuation. Also, we analyzed the wavelength-dependent difference of inter-channel RF power fluctuations.

• Journal of the Institute of Electronics Engineers of Korea TC
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• v.41 no.8
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• pp.79-85
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• 2004

In this paper, the RF-ID system for ubiquitous tagging applications has been designed, fabricated and analysed. The RF-ID System consists of passive RF-ID Tag and Reader. The passive RF-ID tag consists of rectifier using zero-bias schottky diode which converts RF power into DC power, ID chip, ASK modulator using bipolar transistor and slot loop antenna. We suggest an ASK undulation method using a bipolar transistor to compensate the disadvantage of the conventional PIN diode, which needs large current Also, the slot loop antenna with wider bandwidth than that of the conventional patch antenna is suggested The RF-ID reader consist of patch array antenna, Tx/Rx part and ASK demodulator. We have designed the RF-ID System using EM and circuit simulation tools. According to the measured results, The power level of modulation signal at 1 m from passive RF-ID Tag is -46.76 dBm and frequency of it is 57.2 KHz. The transmitting power of RF-ID reader was 500 mW

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.17 no.2
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• pp.162-170
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• 2004

A 900MHz CMOS RF power amplifier with digitally controllable output power has been proposed and designed with 0.6${\mu}{\textrm}{m}$ standard CMOS technology. The designed power amplifier was composed of digitally controllable switch mode pre-amplifiers with an integrated 4nH spiral inductor load and class-C output stage. Especially, to compensate the 1ow Q of integrated spiral inductor, cascode amplifier with a Q-enhancement circuit is used. It has been shown that the proposed power control technique allows the output power to change from almost 3dBm to 13.5dBm. And it has a maximum PAE(Power Added Efficiency) of almost 55％ at 900MHz operating frequency and 3V power supply voltage.

• Proceedings of the KIEE Conference
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• 2011.07a
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• pp.1648-1649
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• 2011

본 논문에서는 무선 전력 전송을 위한 10W RF Power Source를 설계 및 제작, 측정 하였다. 제작된 RF Power Source는 9~11MHz의 신호 생성을 위한 DDS와 전력 증폭을 위한 전력 증폭기로 구성되어 있다. 근거리 무선 전력 전송은 전자기 유도 또는 전자기 공진 형태의 무선으로 전력을 전달하게 되므로 전력 증폭기의 부하단의 임피던스가 변하게 되어 전력 증폭기의 특성의 변화가 생기는 단점을 가지고 있다. 이러한 단점을 극복하기 위해 본 논문에서는 부하단의 임피던스 변화에 둔감하도록 평형(Balanced)구조를 이용하여 전력 증폭기를 설계하였다. 제작된 RF Power Source는 입력 전원 DC 24V, 소모 전류 1.5A, 사용가능 주파수범위는 9~11MHz, 최대 출력 전력 10W의 특성을 보였다.