• ETRI Journal
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• v.25 no.1
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• pp.19-24
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• 2003

This paper describes the performance of a Ku-band 5-bit monolithic phase shifter with metal semiconductor field effect transistor (MESFET) switches and the implementation of a ceramic packaged phase shifter for phase array antennas. Using compensation resistors reduced the insertion loss variation of the phase shifter. Measurement of the 5-bit phase shifter with a monolithic microwave integrated circuit demonstrated a phase error of less than $7.5{\circ}$ root-mean-square (RMS) and an insertion loss variation of less than 0.9 dB RMS for 13 to 15 GHz. For all 32 states of the developed 5-bit phase shifter, the insertion losses were $8.2{\pm}1.4$dB, the input return losses were higher than 7.7 dB, and the output return losses were higher than 6.8 dB for 13 to 15 GHz. The chip size of the 5- bit monolithic phase shifter with a digital circuit for controlling all five bits was 2.35 mm ${\times}$1.65 mm. The packaged phase shifter demonstrated a phase error of less than $11.3{\circ}$ RMS, measured insertion losses of 12.2 ${\pm}$2.2 dB, and an insertion loss variation of 1.0 dB RMS for 13 to 15 GHz. For all 32 states, the input return losses were higher than 5.0 dB and the output return losses were higher than 6.2 dB for 13 to 15 GHz. The size of the packaged phase shifter was 7.20 mm${\times}$ 6.20 mm.

• Proceedings of the KIEE Conference
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• 2000.07c
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• pp.1536-1538
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• 2000

In this paper, designed and fabricated the 1.9GHz band isolator for wire-less communication base-stations. It was investigated that characteristics of insertion loss and return loss. The characteristic results of dual structure design showed values that insertion loss was about -40dB and return loss was about -23dB at 1.93$\sim$1.99GHz.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.19 no.2
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• pp.237-243
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• 2008

This paper presents the backplane effects for two-wire transmission line with different line length crossing the rectangular aperture in an infinite ground backplane. The FDTD method is used to determine the characteristics of the backplane insertion loss and return loss of the transmission line in accordance with the transmission line spacing and additional wire lengths. The results show that the insertion gain is obtained for the narrow spacing of the transmission line and the insertion loss is appeared for the transmission line with the additional wire The measurements of return loss are performed to verify the theoretical analysis.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.29 no.7A
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• pp.852-857
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• 2004

In this research, we suggested a new PBG cell with wide stopband. In order to improve the characteristics of the insertion loss, return loss, and ripple, we used two overlapped cells. One is small cell which is made in inside and the other is large cell which is made in outside. The inner cell stops the high band and the outer cell stops the low band. As a result, the new PBG cell had a wide stop band. Insertion loss was about 40dB in stopband and the ripple, and the return loss was improved. Also, the passband is broaden by employing new PBG cells.

• ETRI Journal
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• v.35 no.4
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• pp.638-643
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• 2013

This paper presents a 5-bit digital step attenuator (DSA) using a commercial 0.18-${\mu}m$ silicon-on-insulator (SOI) process for the wideband phased array antenna. Both low insertion loss and low root mean square (RMS) phase error and amplitude error are achieved employing two attenuation topologies of the switched path attenuator and the switched T-type attenuator. The attenuation coverage of 31 dB with a least significant bit of 1 dB is achieved at DC to 20 GHz. The RMS phase error and amplitude error are less than $2.5^{\circ}$ and less than 0.5 dB, respectively. The measured insertion loss of the reference state is less than 5.5 dB at 10 GHz. The input return loss and output return loss are each less than 12 dB at DC to 20 GHz. The current consumption is nearly zero with a voltage supply of 1.8 V. The chip size is $0.93mm{\times}0.68mm$, including pads. To the best of the authors' knowledge, this is the first demonstration of a low phase error DC-to-20-GHz SOI DSA.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.07a
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• pp.377-382
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• 2000

Film bulk acoustic resonator (FBAR) using AIN reactively sputtered at room temperature was fabricated. The FBAR is composed of a piezoelectric aluminium nitride thin film, top electrode of Al and bottom electrode of Au connected by a short (200${\mu}{\textrm}{m}$) transmission line on both sides and reflector layers of SiO$_2$- W Pair. The active areas of Al and Au were patterned using 150${\mu}{\textrm}{m}$ diameter shadow mask. The series resonance frequency (fs) and the parallel resonance frequency (fp) were measured at 1.976 GHz and 2.005 GHz, respectively. The minimum insertion loss and return loss were 6.1 dB and 37.19 dB, and the quality factor (Q) was 4261.

• The Journal of the Korea institute of electronic communication sciences
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• v.7 no.1
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• pp.9-14
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• 2012

In this study, the diplexer used a separator or a combine of signals was designed and its characteristics were investigated. The diplexer consists of two fixed tuned bandpass filter such as low pass filter(LPF) and high pass filter(HPF) sharing a common part and was simulated. The diplexer with micro-strip structure was fabricated. The LPF of diplexer has insertion loss of -0.4 dB, return loss of -30 dB and 1.6 GHz cut-off frequency and HPF has insertion loss of -0.8 dB, return loss of -30 dB and 1.9 GHz cut-off frequency, respectively.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.17 no.6
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• pp.598-601
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• 2004

A microstrip filter has been designed and fabricated in hairpin form on a GaAs substrate and its characteristics such as the insertion loss, return loss, and bandwidth have been investigated. The presented filter is realized with relatively small size, 4.5 by 3.6 mm. The insertion loss and return loss of the filter are 1.17 dB and 30 dB, respectively. The filter exhibits 3 dB-bandwidth of 350 MHz at the center frequency, 5.890 GHz. The experimental results show good agreement with the numerical ones. However, the measured center frequency is about 100 MHz higher than the designed one.

• Proceedings of the IEEK Conference
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• 2000.11b
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• pp.21-24
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• 2000

This paper introduces the design and implementation of a Ku-band 5-bit monolithic phase shifter with a ceramic package. The 5-bit phase shifter MMIC was designed and fabricated by using GaAs MESFET switches. The packaged phase shifter demonstrates a phase error less than 11.3 $^{\circ}$ RMS and an insertion loss variation less than 1.0㏈ RMS for 13∼15㎓. For all 32 states, an insertion loss is measured to be 12.2${\pm}$2.2㏈, an input return loss more than 5.0㏈, and an output return loss more than 6.2㏈ from 13㎓ to 15㎓. The chip size of the 5-bit phase shifter MMIC is 2.35${\times}$1.65mm$\^$2/ including digital control circuits. The size of the ceramic packaged phase shifter is 7.2${\times}$6.2mm$\^$2/.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.19 no.11
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• pp.1287-1293
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• 2008

Antenna switch module(ASM) for quad-band was developed. This module was integrated by RFIPD(RF integrated passive device) and transistor switch instead of LTCC-type device using low pass filters, diodes and passive elements in RF front end module for cellular phone. This module leads to low cost and miniaturization(The area is $5{\times}5\;mm$ and the thickness is 0.8 mm). The insertion loss and the return loss of each band were averagely measured as 1.0 dB(insertion loss), 15.1 dB(GSM/EGSM return loss) and 19 dB(DCS/PCS return loss), respectively.