• Title/Summary/Keyword: resistive mixer

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Design of the Resistive Mixer MMIC with high linearity and LO-RF isolation (고선형성과 높은 LO-RF 격리도를 갖는 새로운 구조의 저항성 Mixer MMIC 설계)

  • Lee, Kyoung-Hak
    • Journal of Satellite, Information and Communications
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    • v.9 no.2
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    • pp.7-11
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    • 2014
  • In this paper, we designed resistive MMIC mixer using $0.5{\mu}m$ p-HEMT process. This Mixer is designed to have a similar performance in -4 ~ 4 dBm local oscillator signal power level and to maintain a constant conversion loss and linear performance due to the variation of local signal. In order to have such characteristics, we designed new feedback circuit topology by using FET, and minimized performance change for LO signal power level variation, also obtain MMIC mixer characteristics which is able to apply in wideband. In the design result, When the LO signal power is -4 ~ 4 dBm, there was 6 dB conversion loss and it came up with the excellent result that IIP3 got over 30 dBm in 0.5 ~ 2.6GHz frequency band.

Design and fabrication of a Novel 60 GHz GaAs pHEMT Resistive Double Balanced Star MMIC Mixer (새로운 60 GHz 대역 GaAs pHEMT 저항성 이중평형 Star 혼합기 MMIC의 설계 및 제작)

  • 염경환;고두현
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.15 no.6
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    • pp.608-618
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    • 2004
  • In this paper, modifying the diode star double balanced mixer of Maas, a novel resistive 60 GHz pHEMT MMIC star mixer is suggested. Due to star configuration, troublesome IF balun for ring configuration FET mixer is not necessary. In addition, the sysematic design method of dual balun through EM simulation is suggested rather than the design by inspection as Maas. The mixer circuit is fabricated as MMIC on CPW base using 0.1 um GaAs pHEMT Library of MINT in Dongguk University. The size is 1.5 ${\times}$ 1.5 $\textrm{mm}^2$ and its performance is adjustable by DC supply. It can be operated as both up and down converters and it shows the conversion loss of about 13∼18 ㏈ over the full V-band frequencies.

Single-ended Differential RF Circuit Topologies Utilizing Complementary MOS Devices

  • Kim, Bonkee;Ilku Nam;Lee, Kwyro
    • JSTS:Journal of Semiconductor Technology and Science
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    • v.2 no.1
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    • pp.7-18
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    • 2002
  • Single-ended differential RF circuit topologies fully utilizing complementary characteristics of both NMOS and PMOS are proposed, which have inherent advantage of both single-ended and differential circuits. Using this concept, we propose a CCPP (Complementary CMOS parallel push-pull) amplifier which has single-ended input/output with differential amplifying characteristics, leading to more than 30 dB improvement on $IIP_2$. In addition, complementary resistive mixer is also proposed, which provides not only differential IF outputs from single-ended RF input, but much better linearity as well as isolation characteristics. Experimental results using $0.35{\;}\mu\textrm{m}$ CMOS process show that, compared with conventional NMOS resistive mixer, the proposed mixer shows 15 dB better LO-to-IF isolation, 4.6 dB better $IIP_2$, and 4.5 dB better $IIP_3$performances.

Design of resistive mixer for 5.8GHz Wireless LAN (5.8GHz 무선 LAN용 저항성 혼합기 설계)

  • Yoo, Jae-Moon;Kang, Jeong-Jin;An, Jeong-Sig;Kim, Han-Suk;Lee, Jong-Arc
    • Journal of IKEEE
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    • v.3 no.1 s.4
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    • pp.79-85
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    • 1999
  • In this paper, the resistive mixer for 5.86Hz wireless LAN, main part receiving system, was designed and implemented. The noise characteristics and the linearity in the base band was superior. For the use of local oscillator of mixer, dielectric resonator of stable output and temperature characteristics was designed. For the electrical tuning by the capacitance variation of varactor diode, the microstrip line and magnetic coupling characteristics of the dielectric resonance was used. It was obtained that gain of the proposed resistive mixer containing the RF cable loss, is -13.8dB, the conversion loss of frequency converter is -12 dB, and the output power of local oscillator is 1.67 dBm.

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Ku-Band Sub-Harmonically Pumped Single Balanced Resistive Mixers with a Low Pass Filter Using Photonic Band Gap

  • Kim, Jae-Hyuk;Park, Hyun-Joo;Lee, Jong-Chul;Kim, Nam-Young
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.11 no.4
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    • pp.599-609
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    • 2000
  • In this paper, sub-harmonically pumped single balanced resistive mixers are presented . Frequency bandwidth is selected for a Ku-band, which is 11.75-12.25GHz for RF, 5.375∼5.625 GHz for LO, and 1 GHz for IF signals. A rat-race hybrid is designed for the accomplishment of single balanced type. A low pass filter (LPF) with photonic band gap(PBG) structure is used for good conversion loss and unwanted harmonics suppression. Two types of mixers are suggested, which are one with no gate bias for no DC power consumption and the other with the IF amplifier for conversion gain. When a LO signal with the power of 6 dBm at 5.5 GHz is injected, a conversion loss of 12.17dB and a conversion gain of 7.83 dB are obtained for each mixer. For the both mixers , LO to RF isolation of 20 dB and LO to IF isolation of 60dB are obtained. With the RF power of -30dBm to -3dBm, the mixer shows linear characteristics region of IF. this mixer can be applied for Ku-band and other microwave communication systems.

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An MMIC Doubly Balanced Resistive Mixer with a Compact IF Balun (소형 IF 발룬이 내장된 MMIC 이중 평형 저항성 혼합기)

  • Jeong, Jin-Cheol;Yom, In-Bok;Yeom, Kyung-Whan
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.19 no.12
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    • pp.1350-1359
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    • 2008
  • This paper presents a wideband doubly balanced resistive mixer fabricated using $0.5{\mu}m$ GaAs p-HEMT process. Three baluns are employed in the mixer. LO and RF baluns operating over an 8 to 20 GHz range were implemented with Marchand baluns. In order to reduce chip size, the Marchand baluns were realized by the meandering multicoupled line and inductor lines were inserted to compensate for the meandering effect. IF balun was implemented through a DC-coupled differential amplifier. The size of IF balun is $0.3{\times}0.5\;mm^2$ and the measured amplitude and phase unbalances were less than 1 dB and $5^{\circ}$, respectively from DC to 7 GHz. The mixer is $1.7{\times}1.8\;mm^2$ in size, has a conversion loss of 5 to 11 dB, and an output third order intercept(OIP3) of +10 to +15 dBm at 16 dBm LO power for the operating bandwidth.

Design of Broad Band RF Components for Partial Discharge Monitoring System (부분방전 모니터링 시스템을 위한 광대역 RF 소자설계 연구)

  • Lee, Je-Kwang;Ko, Jae-Hyeong;Kim, Koon-Tae;Kim, Hyeong-Seok
    • The Transactions of The Korean Institute of Electrical Engineers
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    • v.60 no.12
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    • pp.2286-2292
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    • 2011
  • In this paper we present the design of Low Noise Amplifier(LNA), mixer and filter for RF front-end part of partial discharge monitoring system. The monitoring system of partial discharge in high voltage power machinery is used to prevent many kinds of industrial accidents, and is usually composed of three parts - sensor, RF front-end and digital microcontroller unit. In our study, LNA, mixer and filter are key components of the RF front-end. The LNA consists of common gate and common source-cascaded structure and uses the resistive feedback for broad band matching. A coupled line structure is utilized to implement the filter, of which size is reduced by the meander structure. The mixer is designed using dual gate structure for high isolation between RF and local oscillator signal.

Fin-Line Balanced Mixer Design for Ku-band Tracking Radar Receiver (Fin-Line 구조의 Ku대역 추적레이더 수신단용 평형 믹서 설계)

  • Na, Jae-Hyun;Roh, Don-Suk;Kim, Dong-Gil
    • The Journal of the Korea institute of electronic communication sciences
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    • v.13 no.4
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    • pp.685-694
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    • 2018
  • In this paper, we designed and fabricated the frequency mixer, which is the core parts of high frequency head in Ku-band tracking radar. To overcome the problem of single-ended and single-balanced resistive structure, we designed the fine-line structure with balanced mixer, to generate IF signal without distortion in L-band, after receiving the RF signal of the Ku-band. The prototype mixer showed a Noise Figure Max of 6.823dB, Gain of 4.1598~4.676dB and Band Pass of 61MHz in 5 Ku-band samples frequency.

A High Linear And Low Noise COMOS RF Front-End For 2.4GHz ZigBee Applications (지그비(ZigBee) 응용을 위한 고선형, 저잡음 2.4GHz CMOS RF 프론트-엔드(Front-End))

  • Lee, Seung-Min;Jung, Chun-Sik;Kim, Young-Jin;Baek, Dong-Hyun
    • Journal of Advanced Navigation Technology
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    • v.12 no.6
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    • pp.604-610
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    • 2008
  • A 2.4 GHz CMOS RF front-end using for ZigBee application is described The front-end consists of a low noise amplifier and a down-mixer and uses a 2 MHz IF frequency. A common source with resistive feedback and an inductive degeneration are adopted for a low noise amplifier, and a 20 dB gain control step is digitally controlled. A passive mixer for low current consumption is employed. The RF front-end is implemented in 0.18 ${\mu}m$IP6M CMOS process. The measured performance is 4.44 dB NF and -6.5 dBm IIP3 while consuming 3.28 mA current from a 1.8 V supply.

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The Desing of GaAs MESFET Resistive Mixer with High Linearity (선형성이 우수한 GaAs MESFET 저항성 혼합기 설계)

  • 이상호;김준수;황충선;박익모;나극환;신철재
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.10 no.2
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    • pp.169-179
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    • 1999
  • In this paper, a GaAs MESFET single-ended resistive mixer with high linearity and isolation is designed. The bias voltage of this mixer is applied only gate of GaAs MESFET to use the channel resistance. The LO is applied the gate and the RF is applied the drain through 7-pole hairpin bandpass filter to obtain the proper isolation thru LO-RF. The IF is extracted from the source with short circuit and lowpass filter. Using extracted equivalent circuits for LO and RF, conversion loss is calculated and compared with result of harmonic balance analysis. Measured conversion loss of this S-band down converter mixer is 8.2~10.5dB by considering the measured 3.0~3.4dB RF 7-pole hairpin bandpass filter loss and IP3in is 26.5dBm at Vg=-0.85~-1.0V in distortion performance.

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