• 대한전기학회:학술대회논문집
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• 대한전기학회 2006년도 제37회 하계학술대회 논문집 D
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• pp.2209-2210
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• 2006

In this paper, PZT(20/80) thick films were fabricated by the screen-printing method. And the PZT(80/20) coating solution was synthesized by the sol-gel method. PZT(20/80) thick films were screen-printed on the alumina substrates. PZT(80/20) thin film was spin-coaled on the PZT(20/80) thick films to obtain densification. And the structural and electrical properties of PZT thick films were investigated with variation of sintering temperature. The PZT specimen sintered at $650^{\circ}C$ showed good relative dielectric constant of 219 and dielectric loss of 2.45%. Also the remanent polarization and the coercive field wore 16.48 ${\mu}C/cm^2$ and 35.48kV/cm, respectively.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2006년도 제37회 하계학술대회 논문집 A
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• pp.577-578
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• 2006

In this paper, PZT(20/80) thick films were fabricated by the screen-printing method. And the PZT(80/20) coating solution was synthesized by the sol-gel method. PZT(20/80) thick films were screen-printed on the alumina substrates. PZT(80/20) thin film was spin-coated on the PZT(20/80) thick films to obtain densification. And the structural and electrical properties of PZT thick films were investigated with variation of sintering temperature. The PZT specimen sintered at 650f showed good relative dielectric constant of 219 and dielectric loss of 2.45%. Also the remanent polarization and the coercive field were 16.48${\mu}C/cm^2$ and 35.48kV/cm, respectively.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2006년도 추계학술대회 논문집 Vol.19
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• pp.368-369
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• 2006

Ferroelectric thin films have attracted much attention for applications in nonvolatile ferroelectric random access memories(NVFeRAM) from the view points of high speed operation, low power consumption, and large scale Integration[1,2]. Among the FRAM, BLT is of particular interest. as it is not only crystallized at relatively low processing temperature, but also shows highly fatigue resistance and large remanent polarization Meanwhile, these submicron ferroelectric capacitors were fabricated by a damascene process using Chemical mechanical polishing (CMP). BLT capacitors were practicable by a damascene process using CMP. The P-E hysteresis were measured under an applied bias of ${\pm}5V$ by using an RT66A measurement system. The electric properties such as I-V were determined by using HP4155A analysers.

• 한국반도체및디스플레이장비학회:학술대회논문집
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• 한국반도체및디스플레이장비학회 2006년도 추계학술대회 발표 논문집
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• pp.170-173
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• 2006

Ferroelectric $Bi_{3.35}Sm_{0.65}Ti_3O_{12}(BST)$ thin films were deposited on $Pt(111)/Ti/SiO_2/Si(100)$ substrates by a sol-gel spin-coating process. In this experiments, $Bi(TMHD)_3$, $Sm_5(O^iPr)_{13}$, $Ti(O^iPr)_4$ were used as precursors, which were dissolved in 2-methoxyethanol. Thereafter, the thin films with the thickness, of 240nm were annealed from 600 to $720^{\circ}C$ in oxygen atmosphere for 1 hr, and post-annealed in oxygen atmosphere for 1 hr after deposition of Pt electrode to enhance the electrical properties. The remanent polarization and coercive voltage of the BST thin films annealed at $720^{\circ}C$ were $19.48\;{\mu}C/cm^2$ and 3.40 V, respectively, and a fatigue-free characteristics. As a result, Sm-substituted bismuth titanate films with good ferroelectric properties and excellent fatigue resistance are useful candidates for ferroelectric memory applications.

• 한국결정학회지
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• 제12권2호
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• pp.65-91
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• 2001

Sawyer-Tower 회로를 이용한 강유전 이력곡선의 측정에서 직류 누설성분에 의한 오차요인을 검토하고 그 해결책을 제안하였다. 강유전체 시편에 존재하는 직류 누설성분에 의한 잔류분극과 항전계는 항상 과대 평가될 수 있는 위험성이 있음을 알 수 있었으며 이러한 오차는 직류누설성분이 크고 측정시간이 길수록 심화되었다. Sawyer-Tower 회로를 이용한 강유전 이력곡선과 함께 보완적으로 활용할 수 있는 전류이력곡선을 새롭게 제안하였다.

• 한국세라믹학회지
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• 제28권4호
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• pp.297-304
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• 1991

Dielectric hysteresis characteristics of Pb(Zr0.52Ti0.48)O3 ceramics have been investigated as a function of the amount of MnO2 addition ranged from 0.0 wt% in Pb(Zr0.52Ti0.48)O3 ceramics enhanced the dielectric strength, aging effect and remanent polarization, while reduced the coercive field. These results could be explained by the effect of Mn-Vo association due to the substitution of Mn for the (Zr, Ti) site in PZT.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1989년도 하계종합학술대회 논문집
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• pp.329-332
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• 1989

Lead titanate thin films were deposited on titanium substrates by a chemical vapour deposition(CVD) process involving the application of vapour mixtures of Pb, ethyl titanate( Ti($C_2H_5O_4$)), and oxygen. The lead titanate having a stoichiometric composition has a dc conductivity of $3.2{\times}10^{-12}{\Omega}^{-1}{\cdot}cm^{-1}$ at room temperature. The nonsaturating loops observed in present investigation may be attributed to the $TiO_2$ and TiO layers between the conductive substrate and the $PbTiO_3$ ferroelectric film. The ferroelectric properties of the stoichiometric $PbTiO_3$ film included a remanent polarization of 14.1 ${\mu}C/cm^2$ and a coercive field of 20.16 kV/cm.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 하계학술대회 논문집
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• pp.139-142
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• 2002

Characteristics of piezoelectric thick films prepared by screen printing were investigated. The piezoelectric thick films were fabricated using Pb(Al,Nb)O$_3$-Pb(Zr,Ti)O$_3$ system on Si-substrate. The fabricated thick films were burned out at 400$^{\circ}C$ and sintered at 850∼1000$^{\circ}C$ using rapid thermal annealing(RTA) precess. The thickness of piezoelectric thick films were 10$\mu\textrm{m}$. PAN-PZT thick film on Ag-Pd/SiO$_2$/Si prepared at 900$^{\circ}C$/1300sec had remanent polarization of 19.70 ${\mu}$C/$\textrm{cm}^2$.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2001년도 하계학술대회 논문집 C
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• pp.1414-1416
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• 2001

Crack-free and homogeneous compact and epitaxial lead zirconate titanate(PZT) ferroelectric thin films with perovsikte structure have been prepared by sol-eel method. Tetrabutyl titanate, lead acetate and zirconium nitrate are used as raw materials. Glacial acetic acid is used as a catalyst. Ethylene glycol monoethyl ether is used as a solvent. The annealing temperatures of th thin films are 600~900$^{\circ}C$. The values of the remanent polarization Pr, and the coercive field $E_c$, of the PZT ceramic thin films are 46, 35 ${\mu}C/cm^2$ respectively.

• 대한전기학회논문지
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• 제34권10호
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• pp.399-406
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• 1985

In this paper transparent PLZT ceramics for the composition of 9/65/35 (La/Zr/Ti ) are fabricated using hotpress and the possibility of application to optical shutter is examined by obtaining the On-Off characteristics of specimens. The ferroelectric E-P hysteresis loop exhibits slim loop suitable for the quadratic electrooptic effect. Measurements of the electrooptic effect show that specimens have the quadratic electrooptic effect but the light intensities as functions of electric field exhibit butterfly type hysteresis curves because of its slightly large saturation remanent polarization and coercive field. On-Off characteristics are obtained by electric fields of-6 kv/cm and +2kv/cm. As a result of experiments, 9/65/35 PLZT ceramics can be applied to optical shutter but construction with other composition which has more slim hysteresis loop is desired for obtaining the Off state by zero electric field.